Patent
US 8,872,308AlN Cap Grown on GaN/REO/Silicon substrate Structure
Erdem Arkun
US
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US 8,872,308Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a simplified layer diagram is 4 illustrated representing several steps in a process of 5 growing I II -N material and devices on a silicon substrate 6 …
FIG. 2, AlN cap layer 18 is illustrated with 14 a I II -N LED structure 20 formed thereon. Structure 20 is 15 illustrated as a single layer for convenience but …
FIG. 3, AlN cap layer 18 is illustrated with 24 a HEMT structure 30 formed thereon. Structure 30 is 25 illustrated as a single layer for convenience but it …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
I II -N material grown on a silicon substrate comprising: a single crystal silicon substrate; a single crystal rare earth oxide layer positioned on the silicon substrate, the rare earth oxide being substantially crystal lattice matched to the surface of the silicon substrate; a first layer of single crystal GaN material positioned on the surface of the single crystal rare earth oxide layer; an interlayer of single crystal aluminum nitride (AlN) positioned on the surface of the first layer of single crystal GaN material and an additional layer of single crystal GaN material positioned on the surface of the inter-layer of single crystal aluminum nitride, the inter-layer of single crystal aluminum nitride and the additional layer of single crystal GaN material repeated n- 00047378.1 2 times to reduce or engineer strain in a final single crystal GaN layer; and a cap layer of single crystal AlN positioned on the surface of the final single crystal GaN layer.
The I II -N material grown on a silicon substrate as claimed in claim 1 wherein the single crystal layer of rare earth oxide includes a composition including multiple rare earth oxides one of graded to bridge the multiple rare earth oxides or stepped to have an abrupt change in the rare earth oxides.
The I II -N material grown on a silicon substrate as claimed in claim 1 further including a layer of single crystal I II -N material grown on the cap layer and including one of an LED structure and an HEMT structure.
A method of growing I II-N material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate; growing or depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate; growing or depositing a first layer of single crystal GaN on the surface of the rare earth oxide layer; growing or depositing an inter-layer of single crystal aluminum nitride (AlN) on the first layer of GaN; growing or depositing an additional layer of single crystal GaN on the surface of the layer of aluminum nitride; repeating the steps of growing or depositing the inter-layer of aluminum nitride and the additional layer of 00047378.1 5 GaN material n-times to reduce or engineer strain in a final GaN layer; and growing or depositing a cap layer of single crystal AlN on the surface of the final GaN layer.
The method as claimed in claim 7 wherein the step of growing or depositing the single crystal layer of rare earth oxide includes a growing or depositing a composition including multiple rare earth oxides one of graded to bridge the multiple rare earth oxides or stepped to have an abrupt change in the rare earth oxides.
The method as claimed in claim 7 wherein the step of growing or depositing the inter-layer of aluminum nitride includes depositing a layer in a range of approximately 1 nm to approximately 10 nm thick.
The method as claimed in claim 7 further including a step of growing or depositing a cap laycr of AlN, wherein the step of growing the AlN cap layer on the surface of the final GaN layer further incld4i-ng includes growing or depositing an LED structure on the AlN cap layer.
The method as claimed in claim 7 further ircluding & wherein the step of growing or depositing a the cap layer of AlN, the step of growing the AlN c ap lay er further including includes growing or depositing an HEMT structure on the AlN cap layer.
A method of growing I II-N material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate; 00047378.1 8 epitaxially depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate; epitaxially depositing a first layer of single crystal GaN on the surface of the rare earth oxide layer; epitaxially depositing an inter-layer of single crystal aluminum nitride (AlN) on the first GaN layer; epitaxially depositing an additional layer of single crystal GaN on the surface of the aluminum nitride inter- layer; repeating the steps of epitaxially depositing the inter-layer of single crystal aluminum nitride and the additional layer of single crystal GaN material n-times to reduce or engineer strain in each subsequent additional layer of single crystal GaN material and in a final single crystal GaN layer; and 00047378.1 9 epitaxially growing or depositing a cap layer of single crystal AlN on the surface of the final single crystal GaN layer, the single crystal AlN cap layer further including growing or depositing one of ar4 an LED structure and an HEMT structure. 00047378.1
Layer stacks claimed or described, ordered top of device to substrate.
GaN/REO/Silicon substrate structure with AlN cap
Materials described outside the worked examples.
silicon substrate
Si
rare earth oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,872,308Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a simplified layer diagram is 4 illustrated representing several steps in a process of 5 growing I II -N material and devices on a silicon substrate 6 …
FIG. 2, AlN cap layer 18 is illustrated with 14 a I II -N LED structure 20 formed thereon. Structure 20 is 15 illustrated as a single layer for convenience but …
FIG. 3, AlN cap layer 18 is illustrated with 24 a HEMT structure 30 formed thereon. Structure 30 is 25 illustrated as a single layer for convenience but it …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
I II -N material grown on a silicon substrate comprising: a single crystal silicon substrate; a single crystal rare earth oxide layer positioned on the silicon substrate, the rare earth oxide being substantially crystal lattice matched to the surface of the silicon substrate; a first layer of single crystal GaN material positioned on the surface of the single crystal rare earth oxide layer; an interlayer of single crystal aluminum nitride (AlN) positioned on the surface of the first layer of single crystal GaN material and an additional layer of single crystal GaN material positioned on the surface of the inter-layer of single crystal aluminum nitride, the inter-layer of single crystal aluminum nitride and the additional layer of single crystal GaN material repeated n- 00047378.1 2 times to reduce or engineer strain in a final single crystal GaN layer; and a cap layer of single crystal AlN positioned on the surface of the final single crystal GaN layer.
The I II -N material grown on a silicon substrate as claimed in claim 1 wherein the single crystal layer of rare earth oxide includes a composition including multiple rare earth oxides one of graded to bridge the multiple rare earth oxides or stepped to have an abrupt change in the rare earth oxides.
The I II -N material grown on a silicon substrate as claimed in claim 1 further including a layer of single crystal I II -N material grown on the cap layer and including one of an LED structure and an HEMT structure.
A method of growing I II-N material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate; growing or depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate; growing or depositing a first layer of single crystal GaN on the surface of the rare earth oxide layer; growing or depositing an inter-layer of single crystal aluminum nitride (AlN) on the first layer of GaN; growing or depositing an additional layer of single crystal GaN on the surface of the layer of aluminum nitride; repeating the steps of growing or depositing the inter-layer of aluminum nitride and the additional layer of 00047378.1 5 GaN material n-times to reduce or engineer strain in a final GaN layer; and growing or depositing a cap layer of single crystal AlN on the surface of the final GaN layer.
The method as claimed in claim 7 wherein the step of growing or depositing the single crystal layer of rare earth oxide includes a growing or depositing a composition including multiple rare earth oxides one of graded to bridge the multiple rare earth oxides or stepped to have an abrupt change in the rare earth oxides.
The method as claimed in claim 7 wherein the step of growing or depositing the inter-layer of aluminum nitride includes depositing a layer in a range of approximately 1 nm to approximately 10 nm thick.
The method as claimed in claim 7 further including a step of growing or depositing a cap laycr of AlN, wherein the step of growing the AlN cap layer on the surface of the final GaN layer further incld4i-ng includes growing or depositing an LED structure on the AlN cap layer.
The method as claimed in claim 7 further ircluding & wherein the step of growing or depositing a the cap layer of AlN, the step of growing the AlN c ap lay er further including includes growing or depositing an HEMT structure on the AlN cap layer.
A method of growing I II-N material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate; 00047378.1 8 epitaxially depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate; epitaxially depositing a first layer of single crystal GaN on the surface of the rare earth oxide layer; epitaxially depositing an inter-layer of single crystal aluminum nitride (AlN) on the first GaN layer; epitaxially depositing an additional layer of single crystal GaN on the surface of the aluminum nitride inter- layer; repeating the steps of epitaxially depositing the inter-layer of single crystal aluminum nitride and the additional layer of single crystal GaN material n-times to reduce or engineer strain in each subsequent additional layer of single crystal GaN material and in a final single crystal GaN layer; and 00047378.1 9 epitaxially growing or depositing a cap layer of single crystal AlN on the surface of the final single crystal GaN layer, the single crystal AlN cap layer further including growing or depositing one of ar4 an LED structure and an HEMT structure. 00047378.1
Layer stacks claimed or described, ordered top of device to substrate.
GaN/REO/Silicon substrate structure with AlN cap
Materials described outside the worked examples.
silicon substrate
Si
rare earth oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,872,308Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a simplified layer diagram is 4 illustrated representing several steps in a process of 5 growing I II -N material and devices on a silicon substrate 6 …
FIG. 2, AlN cap layer 18 is illustrated with 14 a I II -N LED structure 20 formed thereon. Structure 20 is 15 illustrated as a single layer for convenience but …
FIG. 3, AlN cap layer 18 is illustrated with 24 a HEMT structure 30 formed thereon. Structure 30 is 25 illustrated as a single layer for convenience but it …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
I II -N material grown on a silicon substrate comprising: a single crystal silicon substrate; a single crystal rare earth oxide layer positioned on the silicon substrate, the rare earth oxide being substantially crystal lattice matched to the surface of the silicon substrate; a first layer of single crystal GaN material positioned on the surface of the single crystal rare earth oxide layer; an interlayer of single crystal aluminum nitride (AlN) positioned on the surface of the first layer of single crystal GaN material and an additional layer of single crystal GaN material positioned on the surface of the inter-layer of single crystal aluminum nitride, the inter-layer of single crystal aluminum nitride and the additional layer of single crystal GaN material repeated n- 00047378.1 2 times to reduce or engineer strain in a final single crystal GaN layer; and a cap layer of single crystal AlN positioned on the surface of the final single crystal GaN layer.
The I II -N material grown on a silicon substrate as claimed in claim 1 wherein the single crystal layer of rare earth oxide includes a composition including multiple rare earth oxides one of graded to bridge the multiple rare earth oxides or stepped to have an abrupt change in the rare earth oxides.
The I II -N material grown on a silicon substrate as claimed in claim 1 further including a layer of single crystal I II -N material grown on the cap layer and including one of an LED structure and an HEMT structure.
A method of growing I II-N material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate; growing or depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate; growing or depositing a first layer of single crystal GaN on the surface of the rare earth oxide layer; growing or depositing an inter-layer of single crystal aluminum nitride (AlN) on the first layer of GaN; growing or depositing an additional layer of single crystal GaN on the surface of the layer of aluminum nitride; repeating the steps of growing or depositing the inter-layer of aluminum nitride and the additional layer of 00047378.1 5 GaN material n-times to reduce or engineer strain in a final GaN layer; and growing or depositing a cap layer of single crystal AlN on the surface of the final GaN layer.
The method as claimed in claim 7 wherein the step of growing or depositing the single crystal layer of rare earth oxide includes a growing or depositing a composition including multiple rare earth oxides one of graded to bridge the multiple rare earth oxides or stepped to have an abrupt change in the rare earth oxides.
The method as claimed in claim 7 wherein the step of growing or depositing the inter-layer of aluminum nitride includes depositing a layer in a range of approximately 1 nm to approximately 10 nm thick.
The method as claimed in claim 7 further including a step of growing or depositing a cap laycr of AlN, wherein the step of growing the AlN cap layer on the surface of the final GaN layer further incld4i-ng includes growing or depositing an LED structure on the AlN cap layer.
The method as claimed in claim 7 further ircluding & wherein the step of growing or depositing a the cap layer of AlN, the step of growing the AlN c ap lay er further including includes growing or depositing an HEMT structure on the AlN cap layer.
A method of growing I II-N material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate; 00047378.1 8 epitaxially depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate; epitaxially depositing a first layer of single crystal GaN on the surface of the rare earth oxide layer; epitaxially depositing an inter-layer of single crystal aluminum nitride (AlN) on the first GaN layer; epitaxially depositing an additional layer of single crystal GaN on the surface of the aluminum nitride inter- layer; repeating the steps of epitaxially depositing the inter-layer of single crystal aluminum nitride and the additional layer of single crystal GaN material n-times to reduce or engineer strain in each subsequent additional layer of single crystal GaN material and in a final single crystal GaN layer; and 00047378.1 9 epitaxially growing or depositing a cap layer of single crystal AlN on the surface of the final single crystal GaN layer, the single crystal AlN cap layer further including growing or depositing one of ar4 an LED structure and an HEMT structure. 00047378.1
Layer stacks claimed or described, ordered top of device to substrate.
GaN/REO/Silicon substrate structure with AlN cap
Materials described outside the worked examples.
silicon substrate
Si
rare earth oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,872,308Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a simplified layer diagram is 4 illustrated representing several steps in a process of 5 growing I II -N material and devices on a silicon substrate 6 …
FIG. 2, AlN cap layer 18 is illustrated with 14 a I II -N LED structure 20 formed thereon. Structure 20 is 15 illustrated as a single layer for convenience but …
FIG. 3, AlN cap layer 18 is illustrated with 24 a HEMT structure 30 formed thereon. Structure 30 is 25 illustrated as a single layer for convenience but it …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
I II -N material grown on a silicon substrate comprising: a single crystal silicon substrate; a single crystal rare earth oxide layer positioned on the silicon substrate, the rare earth oxide being substantially crystal lattice matched to the surface of the silicon substrate; a first layer of single crystal GaN material positioned on the surface of the single crystal rare earth oxide layer; an interlayer of single crystal aluminum nitride (AlN) positioned on the surface of the first layer of single crystal GaN material and an additional layer of single crystal GaN material positioned on the surface of the inter-layer of single crystal aluminum nitride, the inter-layer of single crystal aluminum nitride and the additional layer of single crystal GaN material repeated n- 00047378.1 2 times to reduce or engineer strain in a final single crystal GaN layer; and a cap layer of single crystal AlN positioned on the surface of the final single crystal GaN layer.
The I II -N material grown on a silicon substrate as claimed in claim 1 wherein the single crystal layer of rare earth oxide includes a composition including multiple rare earth oxides one of graded to bridge the multiple rare earth oxides or stepped to have an abrupt change in the rare earth oxides.
The I II -N material grown on a silicon substrate as claimed in claim 1 further including a layer of single crystal I II -N material grown on the cap layer and including one of an LED structure and an HEMT structure.
A method of growing I II-N material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate; growing or depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate; growing or depositing a first layer of single crystal GaN on the surface of the rare earth oxide layer; growing or depositing an inter-layer of single crystal aluminum nitride (AlN) on the first layer of GaN; growing or depositing an additional layer of single crystal GaN on the surface of the layer of aluminum nitride; repeating the steps of growing or depositing the inter-layer of aluminum nitride and the additional layer of 00047378.1 5 GaN material n-times to reduce or engineer strain in a final GaN layer; and growing or depositing a cap layer of single crystal AlN on the surface of the final GaN layer.
The method as claimed in claim 7 wherein the step of growing or depositing the single crystal layer of rare earth oxide includes a growing or depositing a composition including multiple rare earth oxides one of graded to bridge the multiple rare earth oxides or stepped to have an abrupt change in the rare earth oxides.
The method as claimed in claim 7 wherein the step of growing or depositing the inter-layer of aluminum nitride includes depositing a layer in a range of approximately 1 nm to approximately 10 nm thick.
The method as claimed in claim 7 further including a step of growing or depositing a cap laycr of AlN, wherein the step of growing the AlN cap layer on the surface of the final GaN layer further incld4i-ng includes growing or depositing an LED structure on the AlN cap layer.
The method as claimed in claim 7 further ircluding & wherein the step of growing or depositing a the cap layer of AlN, the step of growing the AlN c ap lay er further including includes growing or depositing an HEMT structure on the AlN cap layer.
A method of growing I II-N material on a silicon substrate comprising the steps of: providing a single crystal silicon substrate; 00047378.1 8 epitaxially depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate; epitaxially depositing a first layer of single crystal GaN on the surface of the rare earth oxide layer; epitaxially depositing an inter-layer of single crystal aluminum nitride (AlN) on the first GaN layer; epitaxially depositing an additional layer of single crystal GaN on the surface of the aluminum nitride inter- layer; repeating the steps of epitaxially depositing the inter-layer of single crystal aluminum nitride and the additional layer of single crystal GaN material n-times to reduce or engineer strain in each subsequent additional layer of single crystal GaN material and in a final single crystal GaN layer; and 00047378.1 9 epitaxially growing or depositing a cap layer of single crystal AlN on the surface of the final single crystal GaN layer, the single crystal AlN cap layer further including growing or depositing one of ar4 an LED structure and an HEMT structure. 00047378.1
Layer stacks claimed or described, ordered top of device to substrate.
GaN/REO/Silicon substrate structure with AlN cap
Materials described outside the worked examples.
silicon substrate
Si
rare earth oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Related documents with shared materials, methods, properties, or citations.
LED structure on GaN/REO/Silicon
HEMT structure on GaN/REO/Silicon
gadolinium oxide
Gd₂O₃
erbium oxide
Er₂O₃
gallium nitride
GaN
aluminum nitride
AlN
intrinsic GaN
i-GaN
n-type GaN
n-GaN
p-type GaN
p-GaN
electron blocking layer
aluminum gallium nitride
AlGaN
LED structure on GaN/REO/Silicon
HEMT structure on GaN/REO/Silicon
gadolinium oxide
Gd₂O₃
erbium oxide
Er₂O₃
gallium nitride
GaN
aluminum nitride
AlN
intrinsic GaN
i-GaN
n-type GaN
n-GaN
p-type GaN
p-GaN
electron blocking layer
aluminum gallium nitride
AlGaN
LED structure on GaN/REO/Silicon
HEMT structure on GaN/REO/Silicon
gadolinium oxide
Gd₂O₃
erbium oxide
Er₂O₃
gallium nitride
GaN
aluminum nitride
AlN
intrinsic GaN
i-GaN
n-type GaN
n-GaN
p-type GaN
p-GaN
electron blocking layer
aluminum gallium nitride
AlGaN
LED structure on GaN/REO/Silicon
HEMT structure on GaN/REO/Silicon
gadolinium oxide
Gd₂O₃
erbium oxide
Er₂O₃
gallium nitride
GaN
aluminum nitride
AlN
intrinsic GaN
i-GaN
n-type GaN
n-GaN
p-type GaN
p-GaN
electron blocking layer
aluminum gallium nitride
AlGaN