A process of fo nn ing a n epitaxial substrate, comprising steps of: epitaxially gro win g an oxide layer containing zin c (Zn) on a substrate, the oxide layer showing an O -p olar surface; epitax ia lly growing a se mic onductor stack made of nitride semiconductor materials on the oxide layer, the semiconductor stack in cluding a nitride semiconductor layer, a ba rri er layer, and a channel layer, the ba rrier layer having ba ndg ap energy greater than bandgap ene rg y of the nitride semiconductor layer and bandgap energy of the channel layer, the semiconductor st a ck showing an N- polar surface: attaching a temporal substrate to the semiconductor stack; removing the substrate and the oxide layer from the semiconductor stack; attaching a support substrate to the nitride se mi conductor layer; and removing the temporal substrate from the semiconductor st a ck. Original

The process according to cla i m 3, w herein the step of removing the temporal substrate includes steps of: melting the adhesive; and cleaning a surf hc e of the channel layer. Original

SVG 16041214.10-17-2019.K₁V₉₄JXLRXEAPX2.CLM.1.svg 0.16 3.82 Black and white 14. T he process according to clai m 1, wherein the step of growing the oxide layer includes steps of: sGRL 2174 7J 90.1 Attorney Docket No. 03303 5 M 639 Page 6 growing a f ir st portion of the oxide la y er at a temperature lo w er than 300 ' C, and growing a second portion of the oxide layer at a temperat u re of 650 to 750 0 C. Original

15. A process of f orrmi ng a high electron mobility t ran sistor (HEN T), comprising steps of: preparing an epitaxial substrate by a process claimed in claim I; covering the semiconductor stack by an in sul ating f ilm on the cha nn el layer; partially removing the insulating film and the channel layer; for m ing a source electrode and a drain electrode on the channel layer exposed by the s tep of partially remo vi ng the i ns ulating fi lm and the channel layer; and fo rming a gate electrode on the insulat in g fil m formed on the semiconductor stack between the source electrode and the drain electrode. Original

A process of form ing a h igh elec tr on mobility transistor (HE M T), comprising ste p s of: epitaxially growing an oxide layer containing zin c (Zn) on a substrate, the oxide layer sho wi ng an O -p olar surf a ce; epitaxially growing a semiconductor stack made of nitride se m ico nduct or materials on the oxide layer, the semiconductor stack including a ni tride semiconductor l ay er, a barrier layer, and a channel la yer, the bar ri er layer having ba n dgap energy greater than bandgap energy of the nitride semiconductor layer and ba n dgap energy of the channel layer, the semiconductor stack showing SVG 1.51 Black and white covering the semiconductor removing the insulat i ng [[fi nn]] film and the c amended 16041214.10-17-2019.K₁V₉₄JXLRXEAPX2.CLM.2.svg 0.16 stack with an insulating fi lm; partially h annel layer; sCR/2174?;9 0. Currently

A process of fo nn ing a n epitaxial substrate, comprising steps of: epitaxially gro win g an oxide layer containing zin c (Zn) on a substrate, the oxide layer showing an O -p olar surface; epitax ia lly growing a se mic onductor stack made of nitride semiconductor materials on the oxide layer, the semiconductor stack in cluding a nitride semiconductor layer, a ba rri er layer, and a channel layer, the ba rrier layer having ba ndg ap energy greater than bandgap ene rg y of the nitride semiconductor layer and bandgap energy of the channel layer, the semiconductor st a ck showing an N- polar surface: attaching a temporal substrate to the semiconductor stack; removing the substrate and the oxide layer from the semiconductor stack; attaching a support substrate to the nitride se mi conductor layer; and removing the temporal substrate from the semiconductor st a ck. Original

The process according to cla i m 3, w herein the step of removing the temporal substrate includes steps of: melting the adhesive; and cleaning a surf hc e of the channel layer. Original

SVG 16041214.10-17-2019.K₁V₉₄JXLRXEAPX2.CLM.1.svg 0.16 3.82 Black and white 14. T he process according to clai m 1, wherein the step of growing the oxide layer includes steps of: sGRL 2174 7J 90.1 Attorney Docket No. 03303 5 M 639 Page 6 growing a f ir st portion of the oxide la y er at a temperature lo w er than 300 ' C, and growing a second portion of the oxide layer at a temperat u re of 650 to 750 0 C. Original

15. A process of f orrmi ng a high electron mobility t ran sistor (HEN T), comprising steps of: preparing an epitaxial substrate by a process claimed in claim I; covering the semiconductor stack by an in sul ating f ilm on the cha nn el layer; partially removing the insulating film and the channel layer; for m ing a source electrode and a drain electrode on the channel layer exposed by the s tep of partially remo vi ng the i ns ulating fi lm and the channel layer; and fo rming a gate electrode on the insulat in g fil m formed on the semiconductor stack between the source electrode and the drain electrode. Original

A process of form ing a h igh elec tr on mobility transistor (HE M T), comprising ste p s of: epitaxially growing an oxide layer containing zin c (Zn) on a substrate, the oxide layer sho wi ng an O -p olar surf a ce; epitaxially growing a semiconductor stack made of nitride se m ico nduct or materials on the oxide layer, the semiconductor stack including a ni tride semiconductor l ay er, a barrier layer, and a channel la yer, the bar ri er layer having ba n dgap energy greater than bandgap energy of the nitride semiconductor layer and ba n dgap energy of the channel layer, the semiconductor stack showing SVG 1.51 Black and white covering the semiconductor removing the insulat i ng [[fi nn]] film and the c amended 16041214.10-17-2019.K₁V₉₄JXLRXEAPX2.CLM.2.svg 0.16 stack with an insulating fi lm; partially h annel layer; sCR/2174?;9 0. Currently

A process of fo nn ing a n epitaxial substrate, comprising steps of: epitaxially gro win g an oxide layer containing zin c (Zn) on a substrate, the oxide layer showing an O -p olar surface; epitax ia lly growing a se mic onductor stack made of nitride semiconductor materials on the oxide layer, the semiconductor stack in cluding a nitride semiconductor layer, a ba rri er layer, and a channel layer, the ba rrier layer having ba ndg ap energy greater than bandgap ene rg y of the nitride semiconductor layer and bandgap energy of the channel layer, the semiconductor st a ck showing an N- polar surface: attaching a temporal substrate to the semiconductor stack; removing the substrate and the oxide layer from the semiconductor stack; attaching a support substrate to the nitride se mi conductor layer; and removing the temporal substrate from the semiconductor st a ck. Original

The process according to cla i m 3, w herein the step of removing the temporal substrate includes steps of: melting the adhesive; and cleaning a surf hc e of the channel layer. Original

SVG 16041214.10-17-2019.K₁V₉₄JXLRXEAPX2.CLM.1.svg 0.16 3.82 Black and white 14. T he process according to clai m 1, wherein the step of growing the oxide layer includes steps of: sGRL 2174 7J 90.1 Attorney Docket No. 03303 5 M 639 Page 6 growing a f ir st portion of the oxide la y er at a temperature lo w er than 300 ' C, and growing a second portion of the oxide layer at a temperat u re of 650 to 750 0 C. Original

15. A process of f orrmi ng a high electron mobility t ran sistor (HEN T), comprising steps of: preparing an epitaxial substrate by a process claimed in claim I; covering the semiconductor stack by an in sul ating f ilm on the cha nn el layer; partially removing the insulating film and the channel layer; for m ing a source electrode and a drain electrode on the channel layer exposed by the s tep of partially remo vi ng the i ns ulating fi lm and the channel layer; and fo rming a gate electrode on the insulat in g fil m formed on the semiconductor stack between the source electrode and the drain electrode. Original

A process of form ing a h igh elec tr on mobility transistor (HE M T), comprising ste p s of: epitaxially growing an oxide layer containing zin c (Zn) on a substrate, the oxide layer sho wi ng an O -p olar surf a ce; epitaxially growing a semiconductor stack made of nitride se m ico nduct or materials on the oxide layer, the semiconductor stack including a ni tride semiconductor l ay er, a barrier layer, and a channel la yer, the bar ri er layer having ba n dgap energy greater than bandgap energy of the nitride semiconductor layer and ba n dgap energy of the channel layer, the semiconductor stack showing SVG 1.51 Black and white covering the semiconductor removing the insulat i ng [[fi nn]] film and the c amended 16041214.10-17-2019.K₁V₉₄JXLRXEAPX2.CLM.2.svg 0.16 stack with an insulating fi lm; partially h annel layer; sCR/2174?;9 0. Currently

A process of fo nn ing a n epitaxial substrate, comprising steps of: epitaxially gro win g an oxide layer containing zin c (Zn) on a substrate, the oxide layer showing an O -p olar surface; epitax ia lly growing a se mic onductor stack made of nitride semiconductor materials on the oxide layer, the semiconductor stack in cluding a nitride semiconductor layer, a ba rri er layer, and a channel layer, the ba rrier layer having ba ndg ap energy greater than bandgap ene rg y of the nitride semiconductor layer and bandgap energy of the channel layer, the semiconductor st a ck showing an N- polar surface: attaching a temporal substrate to the semiconductor stack; removing the substrate and the oxide layer from the semiconductor stack; attaching a support substrate to the nitride se mi conductor layer; and removing the temporal substrate from the semiconductor st a ck. Original

The process according to cla i m 3, w herein the step of removing the temporal substrate includes steps of: melting the adhesive; and cleaning a surf hc e of the channel layer. Original

SVG 16041214.10-17-2019.K₁V₉₄JXLRXEAPX2.CLM.1.svg 0.16 3.82 Black and white 14. T he process according to clai m 1, wherein the step of growing the oxide layer includes steps of: sGRL 2174 7J 90.1 Attorney Docket No. 03303 5 M 639 Page 6 growing a f ir st portion of the oxide la y er at a temperature lo w er than 300 ' C, and growing a second portion of the oxide layer at a temperat u re of 650 to 750 0 C. Original

15. A process of f orrmi ng a high electron mobility t ran sistor (HEN T), comprising steps of: preparing an epitaxial substrate by a process claimed in claim I; covering the semiconductor stack by an in sul ating f ilm on the cha nn el layer; partially removing the insulating film and the channel layer; for m ing a source electrode and a drain electrode on the channel layer exposed by the s tep of partially remo vi ng the i ns ulating fi lm and the channel layer; and fo rming a gate electrode on the insulat in g fil m formed on the semiconductor stack between the source electrode and the drain electrode. Original

A process of form ing a h igh elec tr on mobility transistor (HE M T), comprising ste p s of: epitaxially growing an oxide layer containing zin c (Zn) on a substrate, the oxide layer sho wi ng an O -p olar surf a ce; epitaxially growing a semiconductor stack made of nitride se m ico nduct or materials on the oxide layer, the semiconductor stack including a ni tride semiconductor l ay er, a barrier layer, and a channel la yer, the bar ri er layer having ba n dgap energy greater than bandgap energy of the nitride semiconductor layer and ba n dgap energy of the channel layer, the semiconductor stack showing SVG 1.51 Black and white covering the semiconductor removing the insulat i ng [[fi nn]] film and the c amended 16041214.10-17-2019.K₁V₉₄JXLRXEAPX2.CLM.2.svg 0.16 stack with an insulating fi lm; partially h annel layer; sCR/2174?;9 0. Currently