Patent
US 12,249,631 B2GALLIUM NITRIDE DEVICE FOR HIGH FREQUENCY AND HIGH POWER APPLICATIONS
Puneet Srivastava, James G. Fiorenza
Analog Devices, Inc., Wilmington, MA (US)·Mar. 11, 2025·US
Copyright © 2026 Matter42. All rights reserved.
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US 12,249,631 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flowchart of a technique, such as a 55 method, used to fabricate an electronic device, according to various embodiments.
FIG. 2 illustrates a cross section of layers of materials provided after an initial phase of layer formation in fabri- cating a semiconductor device, according …
FIG. 3 illustrates a cross section of layers after fabricating components of a semiconductor device, according to various embodiments.
FIG. 4 illustrates a cross section of layers of a semicon- 65 ductor device after a temporary carrier is attached, according to various embodiments. B₂
FIG. 5 illustrates a cross section of layers of a semicon- ductor device after a sacrificial layer has been removed to separate an initial substrate from the …
FIG. 6 illustrates a cross section of layers of a semicon- ductor device after back side processing has been performed, according to various embodiments.
FIG. 7 illustrates a cross section of layers of a semicon- ductor device after bonding of the back side of the semi- conductor device to a second substrate, …
FIG. 8 illustrates a cross section of layers of a semicon- ductor device after removal of a temporary carrier, accord- ing to various embodiments. In the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a substrate directly bonded to the layer of the first semiconducting material without an intervening buffer layer material, the substrate comprising a second crystal structure, wherein the substrate has a thermal conduc-tivity greater than that of the first semiconducting material; a gate electrode; a drain electrode; and a backside field plate that is electrically coupled to the heterojunction, wherein the backside field plate includes a side in direct contact with the substrate, and wherein the backside field plate does not include a semiconductor material.
The semiconductor device of claim 1, further compris-ing a high electron-mobility transistor (HEMT) comprising: the layer of the first semiconducting material; the layer of the second semiconducting material; and the backside field plate.
The semiconductor device of claim 1, wherein each of the first semiconducting material and the second semicon-ducting material comprises a compound of one or more elements in group 13 of the periodic table with one or more elements in group 15 of the periodic table.
The semiconductor device of claim 1, wherein the backside field plate comprises a metal material.
The semiconductor device of claim 1, wherein the backside field plate is an electrical conductor.
The semiconductor device of claim 1, further compris-ing: a frontside field plate that is spaced apart from the drain electrode and is configured to spatially distribute an electric field between the gate electrode and the drain electrode.
A semiconductor device, comprising: 5 a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure, wherein the first semiconducting material defines a cavity; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a gate electrode; a drain electrode; means for depleting channel electrons and distributing an electric field, the means for depleting channel electrons and distributing the electric field positioned at least partially in the cavity formed by the first semiconduct-ing material such that an edge of the means for deplet-ing channel electrons and distributing the electric field closest to the drain electrode of the device is aligned with an edge of a frontside field plate closest to the drain electrode, wherein the means for depleting chan-nel electrons and distributing the electric field does not include a semiconductor material; and means for structurally supporting the heterojunction and the means for depleting channel electrons and distrib-uting the electric field, wherein the means for depleting channel electrons and distributing the electric field includes a side in direct contact with the layer of the first semiconducting material.
The semiconductor device of claim 9, further com-prising means for aligning the means for depleting channel electrons and distributing the electric field from a front side of the semiconductor device.
The semiconductor device of claim 9, wherein the means for depleting channel electrons and distributing the electric field includes a conductive material.
A semiconductor device, comprising: 40 a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a substrate directly bonded to the layer of the first semiconducting material without an intervening buffer layer material, the substrate comprising a second crystal B₂ structure, wherein the substrate has a thermal conduc-tivity greater than that of the first semiconducting material; a gate electrode; a source electrode; a drain electrode, wherein a distance D is defined by a distance between a left side of the drain electrode and a right side of the source electrode; and a backside field plate that is electrically coupled to the heterojunction, wherein the backside field plate includes at least one side in direct contact with the first semiconducting material, wherein the backside field plate does not include a semiconductor material, and wherein a width of the backside field plate is less than the distance D.
The semiconductor device of claim 12, further com-prising a high electron-mobility transistor (HEMT) compris-ing: the layer of the first semiconducting material; the layer of the second semiconducting material; and the backside field plate.
The semiconductor device of claim 12, wherein each of the first semiconducting material and the second semiconducting material comprises a compound of one or more elements in group 13 of the periodic table with one or more elements in group 15 of the periodic table.
The semiconductor device of claim 12, further com-prising: a frontside field plate that is spaced apart from the drain electrode and is configured to spatially distribute an electric field between the gate electrode and the drain electrode.
The semiconductor device of claim 12, wherein the backside field plate comprises a metal material.
The semiconductor device of claim 12, wherein the backside field plate is an electrical conductor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device with backside field plate
high electron-mobility transistor (HEMT)
Materials described outside the worked examples.
first semiconducting material (generic Group 13/15 compound)
second semiconducting material (generic Group 13/15 compound)
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 69
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 12,249,631 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flowchart of a technique, such as a 55 method, used to fabricate an electronic device, according to various embodiments.
FIG. 2 illustrates a cross section of layers of materials provided after an initial phase of layer formation in fabri- cating a semiconductor device, according …
FIG. 3 illustrates a cross section of layers after fabricating components of a semiconductor device, according to various embodiments.
FIG. 4 illustrates a cross section of layers of a semicon- 65 ductor device after a temporary carrier is attached, according to various embodiments. B₂
FIG. 5 illustrates a cross section of layers of a semicon- ductor device after a sacrificial layer has been removed to separate an initial substrate from the …
FIG. 6 illustrates a cross section of layers of a semicon- ductor device after back side processing has been performed, according to various embodiments.
FIG. 7 illustrates a cross section of layers of a semicon- ductor device after bonding of the back side of the semi- conductor device to a second substrate, …
FIG. 8 illustrates a cross section of layers of a semicon- ductor device after removal of a temporary carrier, accord- ing to various embodiments. In the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a substrate directly bonded to the layer of the first semiconducting material without an intervening buffer layer material, the substrate comprising a second crystal structure, wherein the substrate has a thermal conduc-tivity greater than that of the first semiconducting material; a gate electrode; a drain electrode; and a backside field plate that is electrically coupled to the heterojunction, wherein the backside field plate includes a side in direct contact with the substrate, and wherein the backside field plate does not include a semiconductor material.
The semiconductor device of claim 1, further compris-ing a high electron-mobility transistor (HEMT) comprising: the layer of the first semiconducting material; the layer of the second semiconducting material; and the backside field plate.
The semiconductor device of claim 1, wherein each of the first semiconducting material and the second semicon-ducting material comprises a compound of one or more elements in group 13 of the periodic table with one or more elements in group 15 of the periodic table.
The semiconductor device of claim 1, wherein the backside field plate comprises a metal material.
The semiconductor device of claim 1, wherein the backside field plate is an electrical conductor.
The semiconductor device of claim 1, further compris-ing: a frontside field plate that is spaced apart from the drain electrode and is configured to spatially distribute an electric field between the gate electrode and the drain electrode.
A semiconductor device, comprising: 5 a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure, wherein the first semiconducting material defines a cavity; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a gate electrode; a drain electrode; means for depleting channel electrons and distributing an electric field, the means for depleting channel electrons and distributing the electric field positioned at least partially in the cavity formed by the first semiconduct-ing material such that an edge of the means for deplet-ing channel electrons and distributing the electric field closest to the drain electrode of the device is aligned with an edge of a frontside field plate closest to the drain electrode, wherein the means for depleting chan-nel electrons and distributing the electric field does not include a semiconductor material; and means for structurally supporting the heterojunction and the means for depleting channel electrons and distrib-uting the electric field, wherein the means for depleting channel electrons and distributing the electric field includes a side in direct contact with the layer of the first semiconducting material.
The semiconductor device of claim 9, further com-prising means for aligning the means for depleting channel electrons and distributing the electric field from a front side of the semiconductor device.
The semiconductor device of claim 9, wherein the means for depleting channel electrons and distributing the electric field includes a conductive material.
A semiconductor device, comprising: 40 a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a substrate directly bonded to the layer of the first semiconducting material without an intervening buffer layer material, the substrate comprising a second crystal B₂ structure, wherein the substrate has a thermal conduc-tivity greater than that of the first semiconducting material; a gate electrode; a source electrode; a drain electrode, wherein a distance D is defined by a distance between a left side of the drain electrode and a right side of the source electrode; and a backside field plate that is electrically coupled to the heterojunction, wherein the backside field plate includes at least one side in direct contact with the first semiconducting material, wherein the backside field plate does not include a semiconductor material, and wherein a width of the backside field plate is less than the distance D.
The semiconductor device of claim 12, further com-prising a high electron-mobility transistor (HEMT) compris-ing: the layer of the first semiconducting material; the layer of the second semiconducting material; and the backside field plate.
The semiconductor device of claim 12, wherein each of the first semiconducting material and the second semiconducting material comprises a compound of one or more elements in group 13 of the periodic table with one or more elements in group 15 of the periodic table.
The semiconductor device of claim 12, further com-prising: a frontside field plate that is spaced apart from the drain electrode and is configured to spatially distribute an electric field between the gate electrode and the drain electrode.
The semiconductor device of claim 12, wherein the backside field plate comprises a metal material.
The semiconductor device of claim 12, wherein the backside field plate is an electrical conductor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device with backside field plate
high electron-mobility transistor (HEMT)
Materials described outside the worked examples.
first semiconducting material (generic Group 13/15 compound)
second semiconducting material (generic Group 13/15 compound)
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 69
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,249,631 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flowchart of a technique, such as a 55 method, used to fabricate an electronic device, according to various embodiments.
FIG. 2 illustrates a cross section of layers of materials provided after an initial phase of layer formation in fabri- cating a semiconductor device, according …
FIG. 3 illustrates a cross section of layers after fabricating components of a semiconductor device, according to various embodiments.
FIG. 4 illustrates a cross section of layers of a semicon- 65 ductor device after a temporary carrier is attached, according to various embodiments. B₂
FIG. 5 illustrates a cross section of layers of a semicon- ductor device after a sacrificial layer has been removed to separate an initial substrate from the …
FIG. 6 illustrates a cross section of layers of a semicon- ductor device after back side processing has been performed, according to various embodiments.
FIG. 7 illustrates a cross section of layers of a semicon- ductor device after bonding of the back side of the semi- conductor device to a second substrate, …
FIG. 8 illustrates a cross section of layers of a semicon- ductor device after removal of a temporary carrier, accord- ing to various embodiments. In the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a substrate directly bonded to the layer of the first semiconducting material without an intervening buffer layer material, the substrate comprising a second crystal structure, wherein the substrate has a thermal conduc-tivity greater than that of the first semiconducting material; a gate electrode; a drain electrode; and a backside field plate that is electrically coupled to the heterojunction, wherein the backside field plate includes a side in direct contact with the substrate, and wherein the backside field plate does not include a semiconductor material.
The semiconductor device of claim 1, further compris-ing a high electron-mobility transistor (HEMT) comprising: the layer of the first semiconducting material; the layer of the second semiconducting material; and the backside field plate.
The semiconductor device of claim 1, wherein each of the first semiconducting material and the second semicon-ducting material comprises a compound of one or more elements in group 13 of the periodic table with one or more elements in group 15 of the periodic table.
The semiconductor device of claim 1, wherein the backside field plate comprises a metal material.
The semiconductor device of claim 1, wherein the backside field plate is an electrical conductor.
The semiconductor device of claim 1, further compris-ing: a frontside field plate that is spaced apart from the drain electrode and is configured to spatially distribute an electric field between the gate electrode and the drain electrode.
A semiconductor device, comprising: 5 a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure, wherein the first semiconducting material defines a cavity; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a gate electrode; a drain electrode; means for depleting channel electrons and distributing an electric field, the means for depleting channel electrons and distributing the electric field positioned at least partially in the cavity formed by the first semiconduct-ing material such that an edge of the means for deplet-ing channel electrons and distributing the electric field closest to the drain electrode of the device is aligned with an edge of a frontside field plate closest to the drain electrode, wherein the means for depleting chan-nel electrons and distributing the electric field does not include a semiconductor material; and means for structurally supporting the heterojunction and the means for depleting channel electrons and distrib-uting the electric field, wherein the means for depleting channel electrons and distributing the electric field includes a side in direct contact with the layer of the first semiconducting material.
The semiconductor device of claim 9, further com-prising means for aligning the means for depleting channel electrons and distributing the electric field from a front side of the semiconductor device.
The semiconductor device of claim 9, wherein the means for depleting channel electrons and distributing the electric field includes a conductive material.
A semiconductor device, comprising: 40 a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a substrate directly bonded to the layer of the first semiconducting material without an intervening buffer layer material, the substrate comprising a second crystal B₂ structure, wherein the substrate has a thermal conduc-tivity greater than that of the first semiconducting material; a gate electrode; a source electrode; a drain electrode, wherein a distance D is defined by a distance between a left side of the drain electrode and a right side of the source electrode; and a backside field plate that is electrically coupled to the heterojunction, wherein the backside field plate includes at least one side in direct contact with the first semiconducting material, wherein the backside field plate does not include a semiconductor material, and wherein a width of the backside field plate is less than the distance D.
The semiconductor device of claim 12, further com-prising a high electron-mobility transistor (HEMT) compris-ing: the layer of the first semiconducting material; the layer of the second semiconducting material; and the backside field plate.
The semiconductor device of claim 12, wherein each of the first semiconducting material and the second semiconducting material comprises a compound of one or more elements in group 13 of the periodic table with one or more elements in group 15 of the periodic table.
The semiconductor device of claim 12, further com-prising: a frontside field plate that is spaced apart from the drain electrode and is configured to spatially distribute an electric field between the gate electrode and the drain electrode.
The semiconductor device of claim 12, wherein the backside field plate comprises a metal material.
The semiconductor device of claim 12, wherein the backside field plate is an electrical conductor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device with backside field plate
high electron-mobility transistor (HEMT)
Materials described outside the worked examples.
first semiconducting material (generic Group 13/15 compound)
second semiconducting material (generic Group 13/15 compound)
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 69
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,249,631 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a flowchart of a technique, such as a 55 method, used to fabricate an electronic device, according to various embodiments.
FIG. 2 illustrates a cross section of layers of materials provided after an initial phase of layer formation in fabri- cating a semiconductor device, according …
FIG. 3 illustrates a cross section of layers after fabricating components of a semiconductor device, according to various embodiments.
FIG. 4 illustrates a cross section of layers of a semicon- 65 ductor device after a temporary carrier is attached, according to various embodiments. B₂
FIG. 5 illustrates a cross section of layers of a semicon- ductor device after a sacrificial layer has been removed to separate an initial substrate from the …
FIG. 6 illustrates a cross section of layers of a semicon- ductor device after back side processing has been performed, according to various embodiments.
FIG. 7 illustrates a cross section of layers of a semicon- ductor device after bonding of the back side of the semi- conductor device to a second substrate, …
FIG. 8 illustrates a cross section of layers of a semicon- ductor device after removal of a temporary carrier, accord- ing to various embodiments. In the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a substrate directly bonded to the layer of the first semiconducting material without an intervening buffer layer material, the substrate comprising a second crystal structure, wherein the substrate has a thermal conduc-tivity greater than that of the first semiconducting material; a gate electrode; a drain electrode; and a backside field plate that is electrically coupled to the heterojunction, wherein the backside field plate includes a side in direct contact with the substrate, and wherein the backside field plate does not include a semiconductor material.
The semiconductor device of claim 1, further compris-ing a high electron-mobility transistor (HEMT) comprising: the layer of the first semiconducting material; the layer of the second semiconducting material; and the backside field plate.
The semiconductor device of claim 1, wherein each of the first semiconducting material and the second semicon-ducting material comprises a compound of one or more elements in group 13 of the periodic table with one or more elements in group 15 of the periodic table.
The semiconductor device of claim 1, wherein the backside field plate comprises a metal material.
The semiconductor device of claim 1, wherein the backside field plate is an electrical conductor.
The semiconductor device of claim 1, further compris-ing: a frontside field plate that is spaced apart from the drain electrode and is configured to spatially distribute an electric field between the gate electrode and the drain electrode.
A semiconductor device, comprising: 5 a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure, wherein the first semiconducting material defines a cavity; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a gate electrode; a drain electrode; means for depleting channel electrons and distributing an electric field, the means for depleting channel electrons and distributing the electric field positioned at least partially in the cavity formed by the first semiconduct-ing material such that an edge of the means for deplet-ing channel electrons and distributing the electric field closest to the drain electrode of the device is aligned with an edge of a frontside field plate closest to the drain electrode, wherein the means for depleting chan-nel electrons and distributing the electric field does not include a semiconductor material; and means for structurally supporting the heterojunction and the means for depleting channel electrons and distrib-uting the electric field, wherein the means for depleting channel electrons and distributing the electric field includes a side in direct contact with the layer of the first semiconducting material.
The semiconductor device of claim 9, further com-prising means for aligning the means for depleting channel electrons and distributing the electric field from a front side of the semiconductor device.
The semiconductor device of claim 9, wherein the means for depleting channel electrons and distributing the electric field includes a conductive material.
A semiconductor device, comprising: 40 a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure; a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting mate-rial to form a heterojunction with the layer of the first semiconducting material; a substrate directly bonded to the layer of the first semiconducting material without an intervening buffer layer material, the substrate comprising a second crystal B₂ structure, wherein the substrate has a thermal conduc-tivity greater than that of the first semiconducting material; a gate electrode; a source electrode; a drain electrode, wherein a distance D is defined by a distance between a left side of the drain electrode and a right side of the source electrode; and a backside field plate that is electrically coupled to the heterojunction, wherein the backside field plate includes at least one side in direct contact with the first semiconducting material, wherein the backside field plate does not include a semiconductor material, and wherein a width of the backside field plate is less than the distance D.
The semiconductor device of claim 12, further com-prising a high electron-mobility transistor (HEMT) compris-ing: the layer of the first semiconducting material; the layer of the second semiconducting material; and the backside field plate.
The semiconductor device of claim 12, wherein each of the first semiconducting material and the second semiconducting material comprises a compound of one or more elements in group 13 of the periodic table with one or more elements in group 15 of the periodic table.
The semiconductor device of claim 12, further com-prising: a frontside field plate that is spaced apart from the drain electrode and is configured to spatially distribute an electric field between the gate electrode and the drain electrode.
The semiconductor device of claim 12, wherein the backside field plate comprises a metal material.
The semiconductor device of claim 12, wherein the backside field plate is an electrical conductor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN semiconductor device with backside field plate
high electron-mobility transistor (HEMT)
Materials described outside the worked examples.
first semiconducting material (generic Group 13/15 compound)
second semiconducting material (generic Group 13/15 compound)
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 69
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