A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing an ion passing through the AlN nucleation layer and into the Si substrate; and introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (µm) to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.

A method for preparing a gallium nitride (GaN) based epitaxial structure having a Si substrate, comprising: preparing an AlN based template having the Si substrate; growing a group III nitride transition layer on an AlN nucleation layer of the AlN based template having the Si substrate; growing a GaN buffer layer on the group III nitride transition layer; and growing a group III nitride heterostructure for a radio frequency device on the GaN buffer layer; wherein preparing an AlN based template having the Si substrate comprises: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing a first ion passing through the AlN nucle-ation layer and into the Si substrate; and introducing a second ion into the AlN nucleation layer, before or after introducing the first iron passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 µm to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nm to 500 nm.

A method for preparing a AlN based template having a Si substrate, comprising: step 1, providing the Si substrate; step 2, growing an AlN nucleation layer on the Si substrate; step 3, introducing a first ion passing through the AlN nucleation layer and into the Si substrate; step 4, introducing a second ion into the AlN nucleation layer, before or after the step 3; and step 5, changing ion type and ion dose after the step 3 and before the step 4 when the step 4 is after the step 3, or 11 12 after the step 4 and before the step 3 when the step 4 is before the step 3, so that a type of the first ion is different from that of the second ion and a dose of the first ion is different from that of the second ion.

A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing an ion passing through the AlN nucleation layer and into the Si substrate; and introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (µm) to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.

A method for preparing a gallium nitride (GaN) based epitaxial structure having a Si substrate, comprising: preparing an AlN based template having the Si substrate; growing a group III nitride transition layer on an AlN nucleation layer of the AlN based template having the Si substrate; growing a GaN buffer layer on the group III nitride transition layer; and growing a group III nitride heterostructure for a radio frequency device on the GaN buffer layer; wherein preparing an AlN based template having the Si substrate comprises: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing a first ion passing through the AlN nucle-ation layer and into the Si substrate; and introducing a second ion into the AlN nucleation layer, before or after introducing the first iron passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 µm to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nm to 500 nm.

A method for preparing a AlN based template having a Si substrate, comprising: step 1, providing the Si substrate; step 2, growing an AlN nucleation layer on the Si substrate; step 3, introducing a first ion passing through the AlN nucleation layer and into the Si substrate; step 4, introducing a second ion into the AlN nucleation layer, before or after the step 3; and step 5, changing ion type and ion dose after the step 3 and before the step 4 when the step 4 is after the step 3, or 11 12 after the step 4 and before the step 3 when the step 4 is before the step 3, so that a type of the first ion is different from that of the second ion and a dose of the first ion is different from that of the second ion.

A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing an ion passing through the AlN nucleation layer and into the Si substrate; and introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (µm) to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.

A method for preparing a gallium nitride (GaN) based epitaxial structure having a Si substrate, comprising: preparing an AlN based template having the Si substrate; growing a group III nitride transition layer on an AlN nucleation layer of the AlN based template having the Si substrate; growing a GaN buffer layer on the group III nitride transition layer; and growing a group III nitride heterostructure for a radio frequency device on the GaN buffer layer; wherein preparing an AlN based template having the Si substrate comprises: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing a first ion passing through the AlN nucle-ation layer and into the Si substrate; and introducing a second ion into the AlN nucleation layer, before or after introducing the first iron passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 µm to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nm to 500 nm.

A method for preparing a AlN based template having a Si substrate, comprising: step 1, providing the Si substrate; step 2, growing an AlN nucleation layer on the Si substrate; step 3, introducing a first ion passing through the AlN nucleation layer and into the Si substrate; step 4, introducing a second ion into the AlN nucleation layer, before or after the step 3; and step 5, changing ion type and ion dose after the step 3 and before the step 4 when the step 4 is after the step 3, or 11 12 after the step 4 and before the step 3 when the step 4 is before the step 3, so that a type of the first ion is different from that of the second ion and a dose of the first ion is different from that of the second ion.

A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing an ion passing through the AlN nucleation layer and into the Si substrate; and introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (µm) to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.

A method for preparing a gallium nitride (GaN) based epitaxial structure having a Si substrate, comprising: preparing an AlN based template having the Si substrate; growing a group III nitride transition layer on an AlN nucleation layer of the AlN based template having the Si substrate; growing a GaN buffer layer on the group III nitride transition layer; and growing a group III nitride heterostructure for a radio frequency device on the GaN buffer layer; wherein preparing an AlN based template having the Si substrate comprises: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; introducing a first ion passing through the AlN nucle-ation layer and into the Si substrate; and introducing a second ion into the AlN nucleation layer, before or after introducing the first iron passing through the AlN nucleation layer and into the Si substrate; wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 µm to 1500 µm, and a thickness of the AlN nucleation layer is in a range from 10 nm to 500 nm.

A method for preparing a AlN based template having a Si substrate, comprising: step 1, providing the Si substrate; step 2, growing an AlN nucleation layer on the Si substrate; step 3, introducing a first ion passing through the AlN nucleation layer and into the Si substrate; step 4, introducing a second ion into the AlN nucleation layer, before or after the step 3; and step 5, changing ion type and ion dose after the step 3 and before the step 4 when the step 4 is after the step 3, or 11 12 after the step 4 and before the step 3 when the step 4 is before the step 3, so that a type of the first ion is different from that of the second ion and a dose of the first ion is different from that of the second ion.