Patent
US 12,635,166 B2GaN POWER DEVICE
Jang Hyun Yoon
LX Semicon Co., Ltd., Daejeon (KR)·May 19, 2026·US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 12,635,166 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a GaN power device according to a preferred embodiment of the present disclo- sure.
FIG. 2 is a cross-sectional view of a GaN power device according to another embodiment of the present disclosure.
FIG. 3 is a cross-sectional view of a GaN power device according to still another embodiment of the present disclo- sure.
FIG. 4 is a cross-sectional view of a GaN power device according to yet another embodiment of the present disclo- sure.
FIG. 5 is a plan view illustrating an example of a layout according to the embodiments of the present disclosure.
FIG. 6 is a plan view illustrating another example of the layout according to the embodiments of the present disclo- sure.
FIG. 7 is a plan view illustrating still another example of the layout according to the embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) power device comprising: a GaN layer of a n-type conductivity type; a source electrode and a drain electrode on the GaN layer in a way to have a separation area therebetween; an AlGaN layer on the GaN layer of the separation area; 10 a gate electrode separated from the source electrode and the drain electrode over the AlGaN layer; a cap layer of a p-type conductivity type disposed between the AlGaN layer and the gate electrode; and a 2DEG layer at an interface of the AlGaN layer and the GaN layer in an area between the cap layer and the drain electrode, wherein at least one concave surface is in the GaN layer under the 2DEG layer, the interface and the 2DEG layer are formed along the concave surface, and wherein a first spaced distance between the cap layer and the drain electrode is greater than a second spaced distance between the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein the concave surface comprises an inverted triangular trench.
The GaN power device of claim 1, wherein the concave surface is composed of a rectangular trench by etching.
The GaN power device of claim 1, wherein a plane pattern of the concave surface has a bar pattern parallel to the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein a plane pattern of the concave surface has a bar pattern disposed in a direction crossing the gate electrode and the drain elec-trode.
The GaN power device of claim 1, wherein: the concave surface is formed in the GaN layer under the 2DEG layer in plural number, and the plurality of concave surfaces is disposed to be sepa-rated from one another in a plane between the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein a portion of the 2DEG layer is vertically overlapped with the gate electrode, but is not overlapped with the cap layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN power device (HEMT)
Materials described outside the worked examples.
GaN layer
GaN
AlGaN layer
AlGaN
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,635,166 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a GaN power device according to a preferred embodiment of the present disclo- sure.
FIG. 2 is a cross-sectional view of a GaN power device according to another embodiment of the present disclosure.
FIG. 3 is a cross-sectional view of a GaN power device according to still another embodiment of the present disclo- sure.
FIG. 4 is a cross-sectional view of a GaN power device according to yet another embodiment of the present disclo- sure.
FIG. 5 is a plan view illustrating an example of a layout according to the embodiments of the present disclosure.
FIG. 6 is a plan view illustrating another example of the layout according to the embodiments of the present disclo- sure.
FIG. 7 is a plan view illustrating still another example of the layout according to the embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) power device comprising: a GaN layer of a n-type conductivity type; a source electrode and a drain electrode on the GaN layer in a way to have a separation area therebetween; an AlGaN layer on the GaN layer of the separation area; 10 a gate electrode separated from the source electrode and the drain electrode over the AlGaN layer; a cap layer of a p-type conductivity type disposed between the AlGaN layer and the gate electrode; and a 2DEG layer at an interface of the AlGaN layer and the GaN layer in an area between the cap layer and the drain electrode, wherein at least one concave surface is in the GaN layer under the 2DEG layer, the interface and the 2DEG layer are formed along the concave surface, and wherein a first spaced distance between the cap layer and the drain electrode is greater than a second spaced distance between the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein the concave surface comprises an inverted triangular trench.
The GaN power device of claim 1, wherein the concave surface is composed of a rectangular trench by etching.
The GaN power device of claim 1, wherein a plane pattern of the concave surface has a bar pattern parallel to the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein a plane pattern of the concave surface has a bar pattern disposed in a direction crossing the gate electrode and the drain elec-trode.
The GaN power device of claim 1, wherein: the concave surface is formed in the GaN layer under the 2DEG layer in plural number, and the plurality of concave surfaces is disposed to be sepa-rated from one another in a plane between the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein a portion of the 2DEG layer is vertically overlapped with the gate electrode, but is not overlapped with the cap layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN power device (HEMT)
Materials described outside the worked examples.
GaN layer
GaN
AlGaN layer
AlGaN
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,635,166 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a GaN power device according to a preferred embodiment of the present disclo- sure.
FIG. 2 is a cross-sectional view of a GaN power device according to another embodiment of the present disclosure.
FIG. 3 is a cross-sectional view of a GaN power device according to still another embodiment of the present disclo- sure.
FIG. 4 is a cross-sectional view of a GaN power device according to yet another embodiment of the present disclo- sure.
FIG. 5 is a plan view illustrating an example of a layout according to the embodiments of the present disclosure.
FIG. 6 is a plan view illustrating another example of the layout according to the embodiments of the present disclo- sure.
FIG. 7 is a plan view illustrating still another example of the layout according to the embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) power device comprising: a GaN layer of a n-type conductivity type; a source electrode and a drain electrode on the GaN layer in a way to have a separation area therebetween; an AlGaN layer on the GaN layer of the separation area; 10 a gate electrode separated from the source electrode and the drain electrode over the AlGaN layer; a cap layer of a p-type conductivity type disposed between the AlGaN layer and the gate electrode; and a 2DEG layer at an interface of the AlGaN layer and the GaN layer in an area between the cap layer and the drain electrode, wherein at least one concave surface is in the GaN layer under the 2DEG layer, the interface and the 2DEG layer are formed along the concave surface, and wherein a first spaced distance between the cap layer and the drain electrode is greater than a second spaced distance between the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein the concave surface comprises an inverted triangular trench.
The GaN power device of claim 1, wherein the concave surface is composed of a rectangular trench by etching.
The GaN power device of claim 1, wherein a plane pattern of the concave surface has a bar pattern parallel to the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein a plane pattern of the concave surface has a bar pattern disposed in a direction crossing the gate electrode and the drain elec-trode.
The GaN power device of claim 1, wherein: the concave surface is formed in the GaN layer under the 2DEG layer in plural number, and the plurality of concave surfaces is disposed to be sepa-rated from one another in a plane between the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein a portion of the 2DEG layer is vertically overlapped with the gate electrode, but is not overlapped with the cap layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN power device (HEMT)
Materials described outside the worked examples.
GaN layer
GaN
AlGaN layer
AlGaN
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,635,166 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a GaN power device according to a preferred embodiment of the present disclo- sure.
FIG. 2 is a cross-sectional view of a GaN power device according to another embodiment of the present disclosure.
FIG. 3 is a cross-sectional view of a GaN power device according to still another embodiment of the present disclo- sure.
FIG. 4 is a cross-sectional view of a GaN power device according to yet another embodiment of the present disclo- sure.
FIG. 5 is a plan view illustrating an example of a layout according to the embodiments of the present disclosure.
FIG. 6 is a plan view illustrating another example of the layout according to the embodiments of the present disclo- sure.
FIG. 7 is a plan view illustrating still another example of the layout according to the embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) power device comprising: a GaN layer of a n-type conductivity type; a source electrode and a drain electrode on the GaN layer in a way to have a separation area therebetween; an AlGaN layer on the GaN layer of the separation area; 10 a gate electrode separated from the source electrode and the drain electrode over the AlGaN layer; a cap layer of a p-type conductivity type disposed between the AlGaN layer and the gate electrode; and a 2DEG layer at an interface of the AlGaN layer and the GaN layer in an area between the cap layer and the drain electrode, wherein at least one concave surface is in the GaN layer under the 2DEG layer, the interface and the 2DEG layer are formed along the concave surface, and wherein a first spaced distance between the cap layer and the drain electrode is greater than a second spaced distance between the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein the concave surface comprises an inverted triangular trench.
The GaN power device of claim 1, wherein the concave surface is composed of a rectangular trench by etching.
The GaN power device of claim 1, wherein a plane pattern of the concave surface has a bar pattern parallel to the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein a plane pattern of the concave surface has a bar pattern disposed in a direction crossing the gate electrode and the drain elec-trode.
The GaN power device of claim 1, wherein: the concave surface is formed in the GaN layer under the 2DEG layer in plural number, and the plurality of concave surfaces is disposed to be sepa-rated from one another in a plane between the gate electrode and the drain electrode.
The GaN power device of claim 1, wherein a portion of the 2DEG layer is vertically overlapped with the gate electrode, but is not overlapped with the cap layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN power device (HEMT)
Materials described outside the worked examples.
GaN layer
GaN
AlGaN layer
AlGaN
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
cap layer
GaN:Mg
2DEG layer
silicon substrate
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AlN nucleation layer
AlN
AlGaN/GaN buffer layer
cap layer
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2DEG layer
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silicon substrate
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