EMBEDDED GALLIUM-NITRIDE IN SILICON

William J. Gallagher

Patent

Atlas literature

Patent

US 9,911,602

EMBEDDED GALLIUM-NITRIDE IN SILICON

William J. Gallagher

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a cross-sectional view of a substrate, according to an example embodiment; [0006]

FIG. 2

FIG. 2 is a cross-sectional view of a substrate following deposition of a nitride and etching a trench, according to an example embodiment; [0007]

FIG. 3

FIG. 3 is a cross-sectional view of a substrate following deposition of a Gallium-Nitride layer, according to an example embodiment; [0008]

FIG. 4

FIG. 4 is a cross-sectional view of a substrate following deposition of a masking layer, according to an example embodiment; [0009]

FIG. 5

FIG. 5 is a cross-sectional view of a substrate following deposition and patterning of a lithographic layer, according to an example embodiment; [0010]

FIG. 6

FIG. 6 is a cross-sectional view of a substrate following etching of the masking layer and the Gallium-Nitride layer, according to an example embodiment; [0011]

FIG. 7

FIG. 7 is a cross-sectional view of a substrate following deposition and planarization of an insulating layer, according to an example embodiment. [0012] …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

8 independent · 7 dependent

1
IndependentSiGaNdielectric layerGaN-in-silicon semiconductor structure (GaN fill, with dielectric isolation)
A semiconductor structure comprising: a substrate, wherein a trench is located in the substrate, and the substrate comprises silicon, and wherein a horizontal surface of the trench is silicon; a gallium-nitride layer ﬁlling the trench, wherein a top surface of the gallium-nitride layer is coplanar with a top surface of the substrate, wherein the bottom surface of the gallium-nitride layer is in direct contact with the horizontal surface of the trench; a semiconductor structure located on the substrate; a GaN structure located above the gallium nitride layer layer: and a dielectric layer located along a vertical surface of the trench and between the gallium- nitride layer and the substrate.
1. 2
  Dependent← claim 1SiGaN-in-silicon semiconductor structure (GaN fill, with dielectric isolation)
  The structure of claim 1, wherein the substrate further comprises a semiconductor on insulator structure.
2. 3
  Dependent← claim 1GaN-in-silicon semiconductor structure (GaN fill, with dielectric isolation)
  The structure of claim 1, wherein the semiconductor structure comprises a fuse, EDRAM, SRAM, or a gate.
3. 4
  Dependent← claim 1GaNGaN LED structure
  The structure of claim 1, wherein the GaN structure comprises an LED.
4. 12
  Dependent← claim 1, claim 5GaN
  The structure of claim 1, wherein the gallium-nitride layer comprises 30 to 70 mole % gallium and 30 to 70 mole % nitrogen. 13. The structure of claim 5 further comprising a dielectric layer located along a vertical surface of the trench and between the gallium-nitride layer and the substrate.
5
IndependentSiGaNAlGaNGaN/AlGaN-in-silicon semiconductor structure
A semiconductor structure comprising: a substrate, wherein a trench is located in the substrate, and the substrate comprises silicon, and wherein a horizontal surface of the trench is silicon; a gallium-nitride layer located in the trench; an aluminum-gallium-nitride layer is located on the gallium nitride layer, wherein the aluminum-gallium-nitride layer and gallium-nitride layer ﬁll the trench, wherein a top surface of the aluminum-gallium-nitride layer is coplanar with a top surface of the substrate, and wherein the bottom surface of the gallium-nitride layer is in direct contact with the horizontal surface of the trench; Page 2 of 7 Docket No. YOR₉₂₀₁₄₀₅₇₉US₂ Serial No. 15/232,860 a semiconductor structure located on the substrate; a GaN structure located above the gallium-nitride layer.
1. 6
  Dependent← claim 5SiGaN/AlGaN-in-silicon semiconductor structure
  The structure of claim 5, wherein the substrate further comprises a semiconductor on insulator structure.
2. 7
  Dependent← claim 5GaN/AlGaN-in-silicon semiconductor structure
  The structure of claim 5, wherein the semiconductor structure comprises a fuse, EDRAM, SRAM, or a gate.
3. 8
  Dependent← claim 5GaNGaN LED structure
  The structure of claim 5, wherein the GaN structure comprises an LED.
9
Independent
9-11. canceled
10
Independent
canceled
11
Independent
canceled
14
Independent
14-16. canceled
15
Independent
canceled
16
Independent
Page 3 of 7 canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-in-silicon semiconductor structure (GaN fill, with dielectric isolation)

GaNGaN structure above

GaNtrench fill

dielectric layertrench isolation dielectric

Sisubstrate

GaN LED structure

GaNGaN LED

GaN/AlGaN-in-silicon semiconductor structure

Materials

Materials described outside the worked examples.

silicon substrate

Substrate

gallium nitride

GaN

Trench Fill Layer

aluminum gallium nitride

AlGaN

Process steps

Additional fabrication and treatment steps described in the patent.

Trench Formation

Step 1

Process details

method:photolithography and anisotropic etching (RIE or plasma etching)

trench depth um:1 to 10

trench width um:0.1 to 10

temperature c max:10

temperature c min:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	10–400 nm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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