COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Tetsuro Ishiguro

Patent

Atlas literature

Patent

US 9,997,594

COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Tetsuro Ishiguro

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

8 independent · 4 dependent

1
IndependentGaN-based channel layernitride semiconductor barrier layernitride semiconductor cap layer first region doped with Fenitride semiconductor cap layer second regionnitride semiconductor first layer between barrier layer and cap layer (higher Al proportion)GaN-based HEMT compound semiconductor device
A compound semiconductor device, comprising: a GaN-based channel layer; a barrier layer of nitride semiconductor above the channel layer; [[and]] a cap layer of nitride semiconductor above the barrier layer, the cap layer includin g: a ﬁrst region doped with Fe; and a second region above the ﬁrst region, a concentration of Fe in the second region being lower than a concentration of Fe in the ﬁrst region;_ and a ﬁrst layer of nitride semiconductor between the barrier layer and the cap lay er, a concentration of Fe in the ﬁrst la y er bein g lower than the concentration of Fe in the ﬁrst re g ion, wherein a prop ortion of Al in the ﬁrst la y er is hi g her than a prop ortion of Al in the barrier la y er. Currently amended
1. 2
  Dependent← claim 1GaN-based HEMT compound semiconductor device
  The compound semiconductor device according to claim 1, wherein, in the second region, the farther a position is separated from the ﬁrst region, the lower the concentration of Fe. Currently amended
2. 3
  Dependent← claim 1GaN-based HEMT compound semiconductor device
  The compound semiconductor device according to claim 1, wherein the concentration of Fe in the ﬁrst region is 1 x 10 15 atoms/cm 3 or more. Original
3. 6
  Dependent← claim 1GaN-based HEMT compound semiconductor device
  The compound semiconductor device according to claim 1, wherein the concentration of Fe at an upper surface of the second region is 1 x 10 19 atoms/cm 3 or less. Original
4
Independent
. Canceled
5
Independent
. Canceled
7
IndependentGaN-based channel layernitride semiconductor barrier layernitride semiconductor cap layer first region doped with Fenitride semiconductor cap layer second regionnitride semiconductor first layer between barrier layer and cap layer (higher Al proportion)Power supply apparatus comprising GaN-based HEMT
A power supply apparatus, comprising a compound semiconductor device, wherein the compound semiconductor device comprises: a GaN-based channel layer; a barrier layer of nitride semiconductor above the channel layer; [[and]] a cap layer of nitride semiconductor above the barrier layer, the cap layer includin g: a ﬁrst region doped with Fe; and a second region above the ﬁrst region, a concentration of Fe in the second region being lower than a concentration of Fe in the ﬁrst region.; and a ﬁrst la y er of nitride semiconductor between the barrier la y er and the ca p layer, a concentration of Fe in the ﬁrst layer bein g lower than the concentration of Fe in the ﬁrst re g ion, wherein a proportion of A l in the ﬁrst layer is hi g her than a proportion of A l in the barrier la y er. Currently amended
8
IndependentGaN-based channel layernitride semiconductor barrier layernitride semiconductor cap layer first region doped with Fenitride semiconductor cap layer second regionnitride semiconductor first layer between barrier layer and cap layer (higher Al proportion)Amplifier comprising GaN-based HEMT
An ampliﬁer, comprising a compound semiconductor device, wherein the compound semiconductor device comprises: a GaN-based channel layer; a barrier layer of nitride semiconductor above the channel layer; [[and]] a cap layer of nitride semiconductor above the barrier layer, the cap layer includin g: a ﬁrst region doped with Fe; and a second region above the ﬁrst region, a concentration of Fe in the second region being lower than a concentration of Fe in the ﬁrst region;_ and a ﬁrst layer of nitride semiconductor between the barrier layer and the cap layer, a concentration of Fe in the ﬁrst layer bein g lower than the concentration of Fe in the ﬁrst re g ion, wherein a prop ortion of A l in the ﬁrst la y er is hi g her than a prop ortion of A l in the barrier la y er. Currently amended
9
IndependentGaN-based channel layernitride semiconductor barrier layernitride semiconductor cap layer first region doped with Fenitride semiconductor cap layer second regionnitride semiconductor first layer between barrier layer and cap layer (higher Al proportion)
A method of manufacturing a compound semiconductor device, comprising: forming a barrier layer of nitride semiconductor above a GaN-based channel layer; [[and]] forming a cap layer of nitride semiconductor above the barrier layer, the forming the cap layer includin g: forming a ﬁrst region with introducing Fe into the ﬁrst region; and forming a second region above the ﬁrst region, a concentration of Fe in the second region being lower than a concentration of Fe in the ﬁrst region.;and formin g a ﬁrst la y er of nitride semiconductor above the barrier la y er, a concentration of Fe in the ﬁrst layer bein g lower than the concentration of Fe in the ﬁrst re g ion, between the formin g the barrier layer and the formin g the cap layer, wherein a prop ortion of A l in the ﬁrst la y er is hi g her than a prop ortion of A l in the barrier la y er. Currently amended
1. 10
  Dependent← claim 9
  The method according to claim 9, wherein, in the second region, the farther a position is separated from the ﬁrst region, the lower the concentration of Fe is. 11. The method according to claim 9, wherein the concentration of Fe in the ﬁrst region is 1 x 10 15 atoms/cm 3 or more. Original
12
Independent
. Canceled
13
Independent
. Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based HEMT compound semiconductor device

nitride semiconductor cap layer second regioncap layer second region low Fe

nitride semiconductor cap layer first region doped with Fecap layer first region Fe doped

nitride semiconductor first layer between barrier layer and cap layer (higher Al proportion)intermediate layer high Al

nitride semiconductor barrier layerbarrier layer

GaN-based channel layerchannel layer

Materials

Materials described outside the worked examples.

GaN-based channel layer

Channel Layer

nitride semiconductor barrier layer

Barrier Layer

nitride semiconductor cap layer first region doped with Fe

Cap Layer First Region

Process steps

Additional fabrication and treatment steps described in the patent.

Epitaxial Growth

Step 1

Ambient

Process details

notes:Buffer layer, channel layer, and barrier layer formed first; then first region (Fe-doped GaN) and second region (undoped GaN) of cap layer formed by MOVPE. Substrate pre-treated by heat treatment in H₂ atmosphere.

method:MOVPE

precursors:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Fet Contact Resistance	—	nitride semiconductor cap layer second region
Thickness	≤ 5 nm

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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