Patent
Atlas literature
Patent
US 12,074,191 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic top view representing areas suitable for the growth of light-emitting diode elements on the support face of a substrate.
FIG. 2 is a schematic sectional view of a part of a light-emitting diode according to the disclosure.
FIG. 3 is a schematic sectional view of a part of a light-emitting diode according to the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device including a substrate having a support face and a plurality of light-emitting diodes, each being wire-shaped and formed on the support face so as to be elongate along a longitudinal axis substantially transverse to the support face of the substrate, each light-emitting diode comprising a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the first doped area being constituted, over all or part of its height counted along the longitudinal axis, of a first central portion substantially elongate along the lon-gitudinal axis formed in a first material based on gallium nitride and a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion being constituted of a first outer part laterally arranged around the first portion, all or part of the first part having a first average atomic concentration of aluminum and of a second lower part arranged, along the longitudinal axis, at least between the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating.
The optoelectronic device according to claim 1, wherein the ratio between the section of the first part of the second portion, considered in a plane perpendicular to the longitudinal axis and positioned at a distance relative to the support face, and the section of the first portion considered in said plane, decreases when the distance increases.
The optoelectronic device according to claim 1, wherein the first average atomic concentration of aluminum is comprised between 0.5% and 15% and the second average atomic concentration of aluminum is comprised between 20% and 50%.
The optoelectronic device according to any of claim 1, wherein said second material has the second average atomic concentration at all or part of its interface with the first material.
A method for manufacturing an optoelectronic device comprising a plurality of light-emitting diodes where each has an elongate wire-shaped along a longitudinal axis and comprises a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the method including the following steps: a) providing a substrate having a support face, said longitudinal axis being intended to be substantially transverse to said support face; b) forming, at said support face, a plurality of areas each being suitable for the subsequent formation of at least one of the light-emitting diodes; 55 c) forming the first doped area of each light-emitting diode at the corresponding area, step c) being carried out in such a way that at the end of step c), the first doped area comprises, over all or part of its height counted along the longitudinal axis, on the one hand of 60 a first central portion substantially elongate along the longitudinal axis formed in a first material based on B₂ gallium nitride, and on the other hand of a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion comprising a first outer part arranged laterally around the first por-tion, all or part of the first part having a first average atomic concentration of aluminum and a second lower part arranged, along the longitudinal axis, between at least the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating; d) forming the active area of each light-emitting diode; and e) forming the second doped area of each light-emitting diode.
The manufacturing method according to claim 6, wherein step c) is carried out by epitaxy using at least partially a first gas containing gallium and a second gas containing aluminum and a third gas containing silane SiH4.
The manufacturing method according to claim 6, wherein step c) is carried out in an enclosure in which a temperature comprised between 900° C. and 1100° C. prevails.
The manufacturing method according to claim 6, wherein the first part of the second portion, and the second part of the second portion are obtained by a first segregation phase during step c).
The manufacturing method according to claim 6, wherein the first average atomic concentration of aluminum is comprised between 0.5% and 15% and the second average atomic concentration of aluminum is comprised between 20% and 50%.
The manufacturing method according to claim 6, wherein step c) comprises a second segregation phase so that after the second segregation phase, the ratio between the section of the first part of the second portion, considered in a plane perpendicular to the longitudinal axis and positioned at a distance from the support face, and the section of the first portion considered in said plane, decreases when the distance increases.
Layer stacks claimed or described, ordered top of device to substrate.
wire-shaped light-emitting diode
Materials described outside the worked examples.
gallium nitride
GaN
gallium aluminum nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–200 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 22
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,074,191 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic top view representing areas suitable for the growth of light-emitting diode elements on the support face of a substrate.
FIG. 2 is a schematic sectional view of a part of a light-emitting diode according to the disclosure.
FIG. 3 is a schematic sectional view of a part of a light-emitting diode according to the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device including a substrate having a support face and a plurality of light-emitting diodes, each being wire-shaped and formed on the support face so as to be elongate along a longitudinal axis substantially transverse to the support face of the substrate, each light-emitting diode comprising a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the first doped area being constituted, over all or part of its height counted along the longitudinal axis, of a first central portion substantially elongate along the lon-gitudinal axis formed in a first material based on gallium nitride and a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion being constituted of a first outer part laterally arranged around the first portion, all or part of the first part having a first average atomic concentration of aluminum and of a second lower part arranged, along the longitudinal axis, at least between the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating.
The optoelectronic device according to claim 1, wherein the ratio between the section of the first part of the second portion, considered in a plane perpendicular to the longitudinal axis and positioned at a distance relative to the support face, and the section of the first portion considered in said plane, decreases when the distance increases.
The optoelectronic device according to claim 1, wherein the first average atomic concentration of aluminum is comprised between 0.5% and 15% and the second average atomic concentration of aluminum is comprised between 20% and 50%.
The optoelectronic device according to any of claim 1, wherein said second material has the second average atomic concentration at all or part of its interface with the first material.
A method for manufacturing an optoelectronic device comprising a plurality of light-emitting diodes where each has an elongate wire-shaped along a longitudinal axis and comprises a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the method including the following steps: a) providing a substrate having a support face, said longitudinal axis being intended to be substantially transverse to said support face; b) forming, at said support face, a plurality of areas each being suitable for the subsequent formation of at least one of the light-emitting diodes; 55 c) forming the first doped area of each light-emitting diode at the corresponding area, step c) being carried out in such a way that at the end of step c), the first doped area comprises, over all or part of its height counted along the longitudinal axis, on the one hand of 60 a first central portion substantially elongate along the longitudinal axis formed in a first material based on B₂ gallium nitride, and on the other hand of a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion comprising a first outer part arranged laterally around the first por-tion, all or part of the first part having a first average atomic concentration of aluminum and a second lower part arranged, along the longitudinal axis, between at least the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating; d) forming the active area of each light-emitting diode; and e) forming the second doped area of each light-emitting diode.
The manufacturing method according to claim 6, wherein step c) is carried out by epitaxy using at least partially a first gas containing gallium and a second gas containing aluminum and a third gas containing silane SiH4.
The manufacturing method according to claim 6, wherein step c) is carried out in an enclosure in which a temperature comprised between 900° C. and 1100° C. prevails.
The manufacturing method according to claim 6, wherein the first part of the second portion, and the second part of the second portion are obtained by a first segregation phase during step c).
The manufacturing method according to claim 6, wherein the first average atomic concentration of aluminum is comprised between 0.5% and 15% and the second average atomic concentration of aluminum is comprised between 20% and 50%.
The manufacturing method according to claim 6, wherein step c) comprises a second segregation phase so that after the second segregation phase, the ratio between the section of the first part of the second portion, considered in a plane perpendicular to the longitudinal axis and positioned at a distance from the support face, and the section of the first portion considered in said plane, decreases when the distance increases.
Layer stacks claimed or described, ordered top of device to substrate.
wire-shaped light-emitting diode
Materials described outside the worked examples.
gallium nitride
GaN
gallium aluminum nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–200 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 22
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,074,191 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic top view representing areas suitable for the growth of light-emitting diode elements on the support face of a substrate.
FIG. 2 is a schematic sectional view of a part of a light-emitting diode according to the disclosure.
FIG. 3 is a schematic sectional view of a part of a light-emitting diode according to the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device including a substrate having a support face and a plurality of light-emitting diodes, each being wire-shaped and formed on the support face so as to be elongate along a longitudinal axis substantially transverse to the support face of the substrate, each light-emitting diode comprising a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the first doped area being constituted, over all or part of its height counted along the longitudinal axis, of a first central portion substantially elongate along the lon-gitudinal axis formed in a first material based on gallium nitride and a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion being constituted of a first outer part laterally arranged around the first portion, all or part of the first part having a first average atomic concentration of aluminum and of a second lower part arranged, along the longitudinal axis, at least between the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating.
The optoelectronic device according to claim 1, wherein the ratio between the section of the first part of the second portion, considered in a plane perpendicular to the longitudinal axis and positioned at a distance relative to the support face, and the section of the first portion considered in said plane, decreases when the distance increases.
The optoelectronic device according to claim 1, wherein the first average atomic concentration of aluminum is comprised between 0.5% and 15% and the second average atomic concentration of aluminum is comprised between 20% and 50%.
The optoelectronic device according to any of claim 1, wherein said second material has the second average atomic concentration at all or part of its interface with the first material.
A method for manufacturing an optoelectronic device comprising a plurality of light-emitting diodes where each has an elongate wire-shaped along a longitudinal axis and comprises a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the method including the following steps: a) providing a substrate having a support face, said longitudinal axis being intended to be substantially transverse to said support face; b) forming, at said support face, a plurality of areas each being suitable for the subsequent formation of at least one of the light-emitting diodes; 55 c) forming the first doped area of each light-emitting diode at the corresponding area, step c) being carried out in such a way that at the end of step c), the first doped area comprises, over all or part of its height counted along the longitudinal axis, on the one hand of 60 a first central portion substantially elongate along the longitudinal axis formed in a first material based on B₂ gallium nitride, and on the other hand of a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion comprising a first outer part arranged laterally around the first por-tion, all or part of the first part having a first average atomic concentration of aluminum and a second lower part arranged, along the longitudinal axis, between at least the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating; d) forming the active area of each light-emitting diode; and e) forming the second doped area of each light-emitting diode.
The manufacturing method according to claim 6, wherein step c) is carried out by epitaxy using at least partially a first gas containing gallium and a second gas containing aluminum and a third gas containing silane SiH4.
The manufacturing method according to claim 6, wherein step c) is carried out in an enclosure in which a temperature comprised between 900° C. and 1100° C. prevails.
The manufacturing method according to claim 6, wherein the first part of the second portion, and the second part of the second portion are obtained by a first segregation phase during step c).
The manufacturing method according to claim 6, wherein the first average atomic concentration of aluminum is comprised between 0.5% and 15% and the second average atomic concentration of aluminum is comprised between 20% and 50%.
The manufacturing method according to claim 6, wherein step c) comprises a second segregation phase so that after the second segregation phase, the ratio between the section of the first part of the second portion, considered in a plane perpendicular to the longitudinal axis and positioned at a distance from the support face, and the section of the first portion considered in said plane, decreases when the distance increases.
Layer stacks claimed or described, ordered top of device to substrate.
wire-shaped light-emitting diode
Materials described outside the worked examples.
gallium nitride
GaN
gallium aluminum nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–200 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 22
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,074,191 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic top view representing areas suitable for the growth of light-emitting diode elements on the support face of a substrate.
FIG. 2 is a schematic sectional view of a part of a light-emitting diode according to the disclosure.
FIG. 3 is a schematic sectional view of a part of a light-emitting diode according to the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optoelectronic device including a substrate having a support face and a plurality of light-emitting diodes, each being wire-shaped and formed on the support face so as to be elongate along a longitudinal axis substantially transverse to the support face of the substrate, each light-emitting diode comprising a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the first doped area being constituted, over all or part of its height counted along the longitudinal axis, of a first central portion substantially elongate along the lon-gitudinal axis formed in a first material based on gallium nitride and a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion being constituted of a first outer part laterally arranged around the first portion, all or part of the first part having a first average atomic concentration of aluminum and of a second lower part arranged, along the longitudinal axis, at least between the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating.
The optoelectronic device according to claim 1, wherein the ratio between the section of the first part of the second portion, considered in a plane perpendicular to the longitudinal axis and positioned at a distance relative to the support face, and the section of the first portion considered in said plane, decreases when the distance increases.
The optoelectronic device according to claim 1, wherein the first average atomic concentration of aluminum is comprised between 0.5% and 15% and the second average atomic concentration of aluminum is comprised between 20% and 50%.
The optoelectronic device according to any of claim 1, wherein said second material has the second average atomic concentration at all or part of its interface with the first material.
A method for manufacturing an optoelectronic device comprising a plurality of light-emitting diodes where each has an elongate wire-shaped along a longitudinal axis and comprises a first doped area formed on the support face by semiconductor elements doped according to a first doping type, an active area formed in an active material and a second doped area formed by semiconductor elements doped according to a second doping type opposite to the first doping type, the method including the following steps: a) providing a substrate having a support face, said longitudinal axis being intended to be substantially transverse to said support face; b) forming, at said support face, a plurality of areas each being suitable for the subsequent formation of at least one of the light-emitting diodes; 55 c) forming the first doped area of each light-emitting diode at the corresponding area, step c) being carried out in such a way that at the end of step c), the first doped area comprises, over all or part of its height counted along the longitudinal axis, on the one hand of 60 a first central portion substantially elongate along the longitudinal axis formed in a first material based on B₂ gallium nitride, and on the other hand of a second outer portion formed in a second material based on gallium and aluminum nitride, the second portion comprising a first outer part arranged laterally around the first por-tion, all or part of the first part having a first average atomic concentration of aluminum and a second lower part arranged, along the longitudinal axis, between at least the first part of the second portion and the substrate, all or part of the second part having a second average atomic concentration of aluminum different from the first average atomic concentration and adapted so that the second part is electrically insulating; d) forming the active area of each light-emitting diode; and e) forming the second doped area of each light-emitting diode.
The manufacturing method according to claim 6, wherein step c) is carried out by epitaxy using at least partially a first gas containing gallium and a second gas containing aluminum and a third gas containing silane SiH4.
The manufacturing method according to claim 6, wherein step c) is carried out in an enclosure in which a temperature comprised between 900° C. and 1100° C. prevails.
The manufacturing method according to claim 6, wherein the first part of the second portion, and the second part of the second portion are obtained by a first segregation phase during step c).
The manufacturing method according to claim 6, wherein the first average atomic concentration of aluminum is comprised between 0.5% and 15% and the second average atomic concentration of aluminum is comprised between 20% and 50%.
The manufacturing method according to claim 6, wherein step c) comprises a second segregation phase so that after the second segregation phase, the ratio between the section of the first part of the second portion, considered in a plane perpendicular to the longitudinal axis and positioned at a distance from the support face, and the section of the first portion considered in said plane, decreases when the distance increases.
Layer stacks claimed or described, ordered top of device to substrate.
wire-shaped light-emitting diode
Materials described outside the worked examples.
gallium nitride
GaN
gallium aluminum nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–200 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 22
Related documents with shared materials, methods, properties, or citations.
| 10–50 nm |
| — |
Thickness | 5–1000 nm | — |
Thickness | 20–500 nm | — |
Flow Rate | 500–1000 sccm | — |
Flow Rate | 800–1200 sccm | — |
Flow Rate | 50–200 sccm | — |
Temperature | 900–1100 °C | — |
Temperature | 950–1050 °C | — |
Temperature | 950–1000 °C | — |
Flow Rate | 200–600 sccm | — |
Flow Rate | 1000–2000 sccm | — |
Flow Rate | 400–800 sccm | — |
Cited non-patent literature · 1
| 10–50 nm |
| — |
Thickness | 5–1000 nm | — |
Thickness | 20–500 nm | — |
Flow Rate | 500–1000 sccm | — |
Flow Rate | 800–1200 sccm | — |
Flow Rate | 50–200 sccm | — |
Temperature | 900–1100 °C | — |
Temperature | 950–1050 °C | — |
Temperature | 950–1000 °C | — |
Flow Rate | 200–600 sccm | — |
Flow Rate | 1000–2000 sccm | — |
Flow Rate | 400–800 sccm | — |
Cited non-patent literature · 1
| 10–50 nm |
| — |
Thickness | 5–1000 nm | — |
Thickness | 20–500 nm | — |
Flow Rate | 500–1000 sccm | — |
Flow Rate | 800–1200 sccm | — |
Flow Rate | 50–200 sccm | — |
Temperature | 900–1100 °C | — |
Temperature | 950–1050 °C | — |
Temperature | 950–1000 °C | — |
Flow Rate | 200–600 sccm | — |
Flow Rate | 1000–2000 sccm | — |
Flow Rate | 400–800 sccm | — |
Cited non-patent literature · 1
| 10–50 nm |
| — |
Thickness | 5–1000 nm | — |
Thickness | 20–500 nm | — |
Flow Rate | 500–1000 sccm | — |
Flow Rate | 800–1200 sccm | — |
Flow Rate | 50–200 sccm | — |
Temperature | 900–1100 °C | — |
Temperature | 950–1050 °C | — |
Temperature | 950–1000 °C | — |
Flow Rate | 200–600 sccm | — |
Flow Rate | 1000–2000 sccm | — |
Flow Rate | 400–800 sccm | — |
Cited non-patent literature · 1
