METHOD FOR GROWTH OF GAN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GAN SUBSTRATE, PROCESS FOR PRODUCING GAN-BASED ELEMENT, AND GAN-BASED ELEMENT

Takafumi Yao

Patent

Atlas literature

Patent

US 8,124,504

METHOD FOR GROWTH OF GAN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GAN SUBSTRATE, PROCESS FOR PRODUCING GAN-BASED ELEMENT, AND GAN-BASED ELEMENT

Takafumi Yao, Meoung-Whan Cho

2012-02-28·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

4 independent · 10 dependent

1
IndependentCrCrNGaNGaNGaN single crystal structure on underlying substrate (with Cr interlayer)
A GaN single crystal growth method comprising: a chromium layer growth process of growing a chromium layer on an underlying substrate; a nitridation process of forming a chromium nitride layer by nitriding at least a surface of the chromium layer; a GaN buﬀer layer growth process of growing a GaN buﬀer layer on the chromium nitride layer; and a GaN layer growth process of growing a high temperature single-crystal GaN layer on the GaN buﬀer layer, wherein the chromium nitride layer has (111) orientation, and wherein, in the GaN buﬀer layer growth process, the GaN buﬀer layer is grown at a temperature of 800 ° C to 1,000 ° C, and, in the GaN layer growth process, the high-temperature single-crystal GaN layer is grown at not less that 1,000 ° C and higher than the growth temperature of the GaN buﬀer layer.
1. 3
  Dependent← claim 1NH₃
  A GaN single crystal growth method according to claim 1, wherein nitridation is performed by a gas containing ammonia in the nitridation process.
2. 4
  Dependent← claim 1
  A GaN single crystal growth method according to a ny ene of claim 1, wherein nitridation is performed at a temperature of 500 ° C to 1,000 " C in the nitridation process.
3. 6
  Dependent← claim 1GaN
  A GaN single crystal growth method according to claim 1, wherein the GaN buﬀer layer is grown to have a thickness of 50 nm to 30 p m in the GaN buﬀer layer growth process.
4. 7
  Dependent← claim 1
  A GaN single crystal growth method according to claim 1, wherein the underlying substrate has a metal layer on a surface.
5. 8
  Dependent← claim 1
  A GaN single crystal growth method according to claim 1, the method further comprising 3 25815/796/1269955.1 PATENT 25815.796 a separation process of separating the single-crystal GaN layer from the underlying substrate by selective chemical etching.
2
IndependentCrNGaNGaNGaN single crystal structure on chromium underlying substrate
A GaN single crystal growth method comprising: a nitridation process of forming a chromium nitride layer by nitriding a surface of a chromium underlying substrate; a GaN buﬀer layer growth process of growing a GaN buﬀer layer on the chromium nitride layer; and a GaN layer growth process of growing a hi gh- temperature single-crystal GaN layer on the GaN buﬀer layer, 2 25815/796/1269955.1 PATENT 25815.796 wherein the chromium nitride layer has (111) orientation, and.
1. 9
  Dependent← claim 2NH₃
  A GaN single crystal growth method according to claim 2, wherein nitridation is performed by a gas containing ammonia in the nitridation process.
2. 10
  Dependent← claim 2
  A GaN single crystal growth method according to claim 2, wherein nitridation is performed at a temperature of 500 ° C to 1,000 0 C in the nitridation process.
3. 12
  Dependent← claim 2GaN
  A GaN single crystal growth method according to claim 2, wherein the GaN buﬀer layer is grown to have a thickness of 50 nm to 30 m in the GaN buﬀer layer growth process.
4. 13
  Dependent← claim 2
  A GaN single crystal growth method according to claim 2, wherein the underlying substrate has a metal layer on a surface.
5. 14
  Dependent← claim 2
  A GaN single crystal growth method according to claim 2, the method further comprising a separation process of separating the single-crystal GaN layer from the underlying substrate by selective chemical etching.
5
Independent
canceled
11
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN single crystal structure on underlying substrate (with Cr interlayer)

GaNsingle crystal GaN

GaNGaN buffer

CrNchromium nitride seed

Crchromium layer

substratesubstrate

GaN single crystal structure on chromium underlying substrate

Materials

Materials described outside the worked examples.

chromium layer

Intermediate Layer

chromium nitride layer

CrN

Buffer Seed Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Nitridation

Step 1

Temperature

500, 1000°C

Ambient

NH3-containing gas

Process details

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Temperature	800–1000 °C	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD FOR GROWTH OF GAN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GAN SUBSTRATE, PROCESS FOR PRODUCING GAN-BASED ELEMENT, AND GAN-BASED ELEMENT | Matter42 Literature