Patent
Atlas literature
Patent
US 12,088,210 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a power conversion system comprising a switched mode power converter in accordance with embodiments of the present disclosure;
FIG. 2 is a schematic diagram of a power conversion system comprising a switched mode power converter in accordance with embodiments of the present disclosure;
FIG. 3 is a cross-sectional view depicting a structure of the switch Q in accordance with one or more embodiments of the present disclosure; and
FIG. 4 is a plan view of the switch Q in accordance with embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A switched mode power converter, comprising: a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a com-mon drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The switched mode power converter of claim 1, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The switched mode power converter of claim 1, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sand-wiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The switched mode power converter of claim 1, wherein each switch of the plurality of switches comprises a 2:1 die area.
The switched mode power converter of claim 1, wherein each switch of the plurality of switches produces one of a single-phase AC output or a three-phase AC output.
A power conversion system, comprising: a DC component coupled to a primary winding of a transformer; and a switched mode power converter coupled to a secondary winding of the transformer and comprising a cyclocon-verter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a common drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The power conversion system of claim 7, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The power conversion system of claim 7, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sandwiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The power conversion system of claim 7, wherein each switch of the plurality of switches comprises a 2:1 die area.
The power conversion system of claim 7, wherein each switch of the plurality of switches produces one of a single-phase AC output or a three-phase AC output.
A switched mode power converter, comprising: a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a com-mon drift region configured to allow current flow in a first direction and a second direction different from the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The switched mode power converter of claim 13, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The switched mode power converter of claim 13, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sand-wiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The switched mode power converter of claim 13, wherein each switch of the plurality of switches comprises a 2:1 die area. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
native four quadrant bi-directional GaN HEMT switch in switched mode power converter cycloconverter
power conversion system with transformer-coupled switched mode power converter comprising cycloconverter with native 4QS GaN HEMT switches
Materials described outside the worked examples.
aluminum gallium nitride
AlGaN
gallium nitride
GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,088,210 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a power conversion system comprising a switched mode power converter in accordance with embodiments of the present disclosure;
FIG. 2 is a schematic diagram of a power conversion system comprising a switched mode power converter in accordance with embodiments of the present disclosure;
FIG. 3 is a cross-sectional view depicting a structure of the switch Q in accordance with one or more embodiments of the present disclosure; and
FIG. 4 is a plan view of the switch Q in accordance with embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A switched mode power converter, comprising: a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a com-mon drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The switched mode power converter of claim 1, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The switched mode power converter of claim 1, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sand-wiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The switched mode power converter of claim 1, wherein each switch of the plurality of switches comprises a 2:1 die area.
The switched mode power converter of claim 1, wherein each switch of the plurality of switches produces one of a single-phase AC output or a three-phase AC output.
A power conversion system, comprising: a DC component coupled to a primary winding of a transformer; and a switched mode power converter coupled to a secondary winding of the transformer and comprising a cyclocon-verter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a common drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The power conversion system of claim 7, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The power conversion system of claim 7, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sandwiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The power conversion system of claim 7, wherein each switch of the plurality of switches comprises a 2:1 die area.
The power conversion system of claim 7, wherein each switch of the plurality of switches produces one of a single-phase AC output or a three-phase AC output.
A switched mode power converter, comprising: a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a com-mon drift region configured to allow current flow in a first direction and a second direction different from the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The switched mode power converter of claim 13, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The switched mode power converter of claim 13, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sand-wiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The switched mode power converter of claim 13, wherein each switch of the plurality of switches comprises a 2:1 die area. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
native four quadrant bi-directional GaN HEMT switch in switched mode power converter cycloconverter
power conversion system with transformer-coupled switched mode power converter comprising cycloconverter with native 4QS GaN HEMT switches
Materials described outside the worked examples.
aluminum gallium nitride
AlGaN
gallium nitride
GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,088,210 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a power conversion system comprising a switched mode power converter in accordance with embodiments of the present disclosure;
FIG. 2 is a schematic diagram of a power conversion system comprising a switched mode power converter in accordance with embodiments of the present disclosure;
FIG. 3 is a cross-sectional view depicting a structure of the switch Q in accordance with one or more embodiments of the present disclosure; and
FIG. 4 is a plan view of the switch Q in accordance with embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A switched mode power converter, comprising: a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a com-mon drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The switched mode power converter of claim 1, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The switched mode power converter of claim 1, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sand-wiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The switched mode power converter of claim 1, wherein each switch of the plurality of switches comprises a 2:1 die area.
The switched mode power converter of claim 1, wherein each switch of the plurality of switches produces one of a single-phase AC output or a three-phase AC output.
A power conversion system, comprising: a DC component coupled to a primary winding of a transformer; and a switched mode power converter coupled to a secondary winding of the transformer and comprising a cyclocon-verter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a common drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The power conversion system of claim 7, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The power conversion system of claim 7, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sandwiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The power conversion system of claim 7, wherein each switch of the plurality of switches comprises a 2:1 die area.
The power conversion system of claim 7, wherein each switch of the plurality of switches produces one of a single-phase AC output or a three-phase AC output.
A switched mode power converter, comprising: a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a com-mon drift region configured to allow current flow in a first direction and a second direction different from the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The switched mode power converter of claim 13, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The switched mode power converter of claim 13, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sand-wiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The switched mode power converter of claim 13, wherein each switch of the plurality of switches comprises a 2:1 die area. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
native four quadrant bi-directional GaN HEMT switch in switched mode power converter cycloconverter
power conversion system with transformer-coupled switched mode power converter comprising cycloconverter with native 4QS GaN HEMT switches
Materials described outside the worked examples.
aluminum gallium nitride
AlGaN
gallium nitride
GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,088,210 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a power conversion system comprising a switched mode power converter in accordance with embodiments of the present disclosure;
FIG. 2 is a schematic diagram of a power conversion system comprising a switched mode power converter in accordance with embodiments of the present disclosure;
FIG. 3 is a cross-sectional view depicting a structure of the switch Q in accordance with one or more embodiments of the present disclosure; and
FIG. 4 is a plan view of the switch Q in accordance with embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A switched mode power converter, comprising: a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a com-mon drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The switched mode power converter of claim 1, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The switched mode power converter of claim 1, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sand-wiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The switched mode power converter of claim 1, wherein each switch of the plurality of switches comprises a 2:1 die area.
The switched mode power converter of claim 1, wherein each switch of the plurality of switches produces one of a single-phase AC output or a three-phase AC output.
A power conversion system, comprising: a DC component coupled to a primary winding of a transformer; and a switched mode power converter coupled to a secondary winding of the transformer and comprising a cyclocon-verter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a common drift region configured to allow current flow in a first direction from a first source terminal to second source terminal and in a second direction from the second source terminal to the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The power conversion system of claim 7, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The power conversion system of claim 7, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sandwiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The power conversion system of claim 7, wherein each switch of the plurality of switches comprises a 2:1 die area.
The power conversion system of claim 7, wherein each switch of the plurality of switches produces one of a single-phase AC output or a three-phase AC output.
A switched mode power converter, comprising: a cycloconverter comprising a plurality of switches, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch with a com-mon drift region configured to allow current flow in a first direction and a second direction different from the first direction, wherein each switch of the plurality of switches comprises two gate-source structures that extend through an inert passivation layer to couple to an aluminum gallium nitride (AlGaN) layer.
The switched mode power converter of claim 13, wherein the native four quadrant bi-directional switch is a gallium nitride (GaN) high mobility electron transistor (HEMT).
The switched mode power converter of claim 13, wherein the aluminum gallium nitride (AlGaN) layer is disposed atop a gallium nitride (GaN) layer which is sand-wiched between the aluminum gallium nitride (AlGaN) layer and a transition layer.
The switched mode power converter of claim 13, wherein each switch of the plurality of switches comprises a 2:1 die area. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
native four quadrant bi-directional GaN HEMT switch in switched mode power converter cycloconverter
power conversion system with transformer-coupled switched mode power converter comprising cycloconverter with native 4QS GaN HEMT switches
Materials described outside the worked examples.
aluminum gallium nitride
AlGaN
gallium nitride
GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
inert passivation layer
Cited non-patent literature · 1
inert passivation layer
Cited non-patent literature · 1
inert passivation layer
Cited non-patent literature · 1
inert passivation layer
Cited non-patent literature · 1
