Patent
US 8,809,907LEAKAGE BARRIER FOR GaN BASED HEMT ACTIVE DEVICE
Rajinder Randy Sandhu
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,809,907Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 2A-2D, relates to an embodiment of the invention in which the HEMT is formed from bulk GaN material. An alternate embodiment of the invention is …
FIG. 3D, illustrating formation of the source and drain contacts. DETAILED DESCRIPTION [0016] The present invention relates to a HEMT formed from a GaN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Page 2 11/374,819 NGC-408 Claims 1-5 SVG 11374819.06-06-2014.HW₉₇KOFLPXXIFW1.CLM.1.svg 5.18 6.63 Black and white canceled
The HEM T as recited in Claim 6, wherein said GaN based material includes bulk GaN.
The HEM T as recited in Claim 6, wherein said GaN based material includes GaN and AIGaN.
ntymnded)_ The HEM T as recited Claim 8, wherein said HEM T includes: a G aA N layer formed on said substrate; a buffer layer formed from AIGaN formed on said GaN layer; and Page 3 11/374,819 NGC-408 a GaN formed on top of said buffer layer.
The HEM T as recited in Claim 6, wherein said insulating material is SiN.
The HEM T as recited in Claim 6 wherein said gate metal contact consists of a single conductive material.
The HEM T as recited in Claim 6 wherein the planar bottom surface of the metal gate contact and the planar bottom surfaces of the source and drain contacts all share a common plane.
The HEMT as recited in Claim 6 wherein a portion of the planar bottom surface of the metal gate contact is in contact with and overlaps a portion of said insulation that is flush with the top of the mesa.
The HEMT as recited in Claim 13 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
The HEMT as recited in Claim 6 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.
A high electron mobility transistor (HEM T) comprising: a substrate; a mesa formed on a portion of said substrate with one or more GaN materials to form a planar top of said mesa and exposed portions of said substrate adjacent opposing sides of said mesa, said mesa defining vertical sidewalls and forming steps on opposing sides of said mesa; a single insulating material disposed on said exposed portions of the vertical sidewalls of said substrate, said insulating material flush with the top of the mesa and flush with said vertical sidewalls; a gate metal contact having a planar bottom surface disposed on a portion of said planar top of the mesa, a portion of the planar bottom surface of the metal gate contact being in contact with and overlapping said insulation that is flush with the top of the mesa; and source and drain contacts each having planar bottom surfaces that are in contact with and overlap a portion of said insulation that is flush with the top of the mesa, and that also are in contact with and reside on said planar top of the mesa.
The HEM T as recited in Claim 16 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
The HEM T as recited in Claim 16 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with insulating back-fill
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.5–2 um | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,809,907Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 2A-2D, relates to an embodiment of the invention in which the HEMT is formed from bulk GaN material. An alternate embodiment of the invention is …
FIG. 3D, illustrating formation of the source and drain contacts. DETAILED DESCRIPTION [0016] The present invention relates to a HEMT formed from a GaN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Page 2 11/374,819 NGC-408 Claims 1-5 SVG 11374819.06-06-2014.HW₉₇KOFLPXXIFW1.CLM.1.svg 5.18 6.63 Black and white canceled
The HEM T as recited in Claim 6, wherein said GaN based material includes bulk GaN.
The HEM T as recited in Claim 6, wherein said GaN based material includes GaN and AIGaN.
ntymnded)_ The HEM T as recited Claim 8, wherein said HEM T includes: a G aA N layer formed on said substrate; a buffer layer formed from AIGaN formed on said GaN layer; and Page 3 11/374,819 NGC-408 a GaN formed on top of said buffer layer.
The HEM T as recited in Claim 6, wherein said insulating material is SiN.
The HEM T as recited in Claim 6 wherein said gate metal contact consists of a single conductive material.
The HEM T as recited in Claim 6 wherein the planar bottom surface of the metal gate contact and the planar bottom surfaces of the source and drain contacts all share a common plane.
The HEMT as recited in Claim 6 wherein a portion of the planar bottom surface of the metal gate contact is in contact with and overlaps a portion of said insulation that is flush with the top of the mesa.
The HEMT as recited in Claim 13 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
The HEMT as recited in Claim 6 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.
A high electron mobility transistor (HEM T) comprising: a substrate; a mesa formed on a portion of said substrate with one or more GaN materials to form a planar top of said mesa and exposed portions of said substrate adjacent opposing sides of said mesa, said mesa defining vertical sidewalls and forming steps on opposing sides of said mesa; a single insulating material disposed on said exposed portions of the vertical sidewalls of said substrate, said insulating material flush with the top of the mesa and flush with said vertical sidewalls; a gate metal contact having a planar bottom surface disposed on a portion of said planar top of the mesa, a portion of the planar bottom surface of the metal gate contact being in contact with and overlapping said insulation that is flush with the top of the mesa; and source and drain contacts each having planar bottom surfaces that are in contact with and overlap a portion of said insulation that is flush with the top of the mesa, and that also are in contact with and reside on said planar top of the mesa.
The HEM T as recited in Claim 16 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
The HEM T as recited in Claim 16 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with insulating back-fill
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.5–2 um | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,809,907Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 2A-2D, relates to an embodiment of the invention in which the HEMT is formed from bulk GaN material. An alternate embodiment of the invention is …
FIG. 3D, illustrating formation of the source and drain contacts. DETAILED DESCRIPTION [0016] The present invention relates to a HEMT formed from a GaN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Page 2 11/374,819 NGC-408 Claims 1-5 SVG 11374819.06-06-2014.HW₉₇KOFLPXXIFW1.CLM.1.svg 5.18 6.63 Black and white canceled
The HEM T as recited in Claim 6, wherein said GaN based material includes bulk GaN.
The HEM T as recited in Claim 6, wherein said GaN based material includes GaN and AIGaN.
ntymnded)_ The HEM T as recited Claim 8, wherein said HEM T includes: a G aA N layer formed on said substrate; a buffer layer formed from AIGaN formed on said GaN layer; and Page 3 11/374,819 NGC-408 a GaN formed on top of said buffer layer.
The HEM T as recited in Claim 6, wherein said insulating material is SiN.
The HEM T as recited in Claim 6 wherein said gate metal contact consists of a single conductive material.
The HEM T as recited in Claim 6 wherein the planar bottom surface of the metal gate contact and the planar bottom surfaces of the source and drain contacts all share a common plane.
The HEMT as recited in Claim 6 wherein a portion of the planar bottom surface of the metal gate contact is in contact with and overlaps a portion of said insulation that is flush with the top of the mesa.
The HEMT as recited in Claim 13 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
The HEMT as recited in Claim 6 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.
A high electron mobility transistor (HEM T) comprising: a substrate; a mesa formed on a portion of said substrate with one or more GaN materials to form a planar top of said mesa and exposed portions of said substrate adjacent opposing sides of said mesa, said mesa defining vertical sidewalls and forming steps on opposing sides of said mesa; a single insulating material disposed on said exposed portions of the vertical sidewalls of said substrate, said insulating material flush with the top of the mesa and flush with said vertical sidewalls; a gate metal contact having a planar bottom surface disposed on a portion of said planar top of the mesa, a portion of the planar bottom surface of the metal gate contact being in contact with and overlapping said insulation that is flush with the top of the mesa; and source and drain contacts each having planar bottom surfaces that are in contact with and overlap a portion of said insulation that is flush with the top of the mesa, and that also are in contact with and reside on said planar top of the mesa.
The HEM T as recited in Claim 16 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
The HEM T as recited in Claim 16 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with insulating back-fill
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.5–2 um | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,809,907Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 2A-2D, relates to an embodiment of the invention in which the HEMT is formed from bulk GaN material. An alternate embodiment of the invention is …
FIG. 3D, illustrating formation of the source and drain contacts. DETAILED DESCRIPTION [0016] The present invention relates to a HEMT formed from a GaN …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Page 2 11/374,819 NGC-408 Claims 1-5 SVG 11374819.06-06-2014.HW₉₇KOFLPXXIFW1.CLM.1.svg 5.18 6.63 Black and white canceled
The HEM T as recited in Claim 6, wherein said GaN based material includes bulk GaN.
The HEM T as recited in Claim 6, wherein said GaN based material includes GaN and AIGaN.
ntymnded)_ The HEM T as recited Claim 8, wherein said HEM T includes: a G aA N layer formed on said substrate; a buffer layer formed from AIGaN formed on said GaN layer; and Page 3 11/374,819 NGC-408 a GaN formed on top of said buffer layer.
The HEM T as recited in Claim 6, wherein said insulating material is SiN.
The HEM T as recited in Claim 6 wherein said gate metal contact consists of a single conductive material.
The HEM T as recited in Claim 6 wherein the planar bottom surface of the metal gate contact and the planar bottom surfaces of the source and drain contacts all share a common plane.
The HEMT as recited in Claim 6 wherein a portion of the planar bottom surface of the metal gate contact is in contact with and overlaps a portion of said insulation that is flush with the top of the mesa.
The HEMT as recited in Claim 13 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
The HEMT as recited in Claim 6 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.
A high electron mobility transistor (HEM T) comprising: a substrate; a mesa formed on a portion of said substrate with one or more GaN materials to form a planar top of said mesa and exposed portions of said substrate adjacent opposing sides of said mesa, said mesa defining vertical sidewalls and forming steps on opposing sides of said mesa; a single insulating material disposed on said exposed portions of the vertical sidewalls of said substrate, said insulating material flush with the top of the mesa and flush with said vertical sidewalls; a gate metal contact having a planar bottom surface disposed on a portion of said planar top of the mesa, a portion of the planar bottom surface of the metal gate contact being in contact with and overlapping said insulation that is flush with the top of the mesa; and source and drain contacts each having planar bottom surfaces that are in contact with and overlap a portion of said insulation that is flush with the top of the mesa, and that also are in contact with and reside on said planar top of the mesa.
The HEM T as recited in Claim 16 wherein the portion of the planar bottom surface of the metal gate contact that overlaps a portion of said insulation does not extend to the outside edge of the insulation.
The HEM T as recited in Claim 16 wherein at least a portion of each of the source and drain contacts extends to and terminates at the outside edge of the insulation that is flush with the top of the mesa.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with insulating back-fill
Materials described outside the worked examples.
GaN
AlGaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.5–2 um | — |
Related documents with shared materials, methods, properties, or citations.
GaN/AlGaN HEMT with layered structure
SiN
insulating material
GaN/AlGaN HEMT with layered structure
SiN
insulating material
GaN/AlGaN HEMT with layered structure
SiN
insulating material
GaN/AlGaN HEMT with layered structure
SiN
insulating material