Patent
US 9,431,391SEMICONDUCTOR DEVICE
Katsunori UENO
US
Copyright © 2026 Matter42. All rights reserved.
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US 9,431,391Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a semiconductor device according to an embodiment 1;
FIG. 2 is a schematic cross-sectional view of HE MT which is a first element constituting the semiconductor device shown in
FIG. 3 is a view explaining characteristics of the semiconductor device shown in
FIG. 4 is a circuit diagram of a semiconductor device according to an embodiment 2;
FIG. 5 is a circuit diagram of a semiconductor device according to an embodiment 3;
FIG. 6 is a view of a configuration in case of forming a diode on a chip;
FIG. 7 is a cross sectional view taken along a line VII -VII in
FIG. 8 is a circuit diagram of a semiconductor device according to an embodiment 4; and
FIG. 9 is a view showing a relation between stress voltage and collapse.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a first element which is a normally-on type transistor made of nitride-based compound semiconductor; semiconductor. the first element being a gallium nitride-high electron mobility transistor (GaN-HEMT) or a junction field effect transistor (FET); a second element connected to the first element in series and being a transistor having withstand voltage between a source and a drain which is lower than withstand voltage of the first element; a first diode connected between a gate of the first element or a gate of the second element and a drain of the first element so that a cathode of the first diode is connected at the drain's side, an anode of the first diode is directly connected to the gate of the first element, and the first diode having predetermined avalanche withstand voltage; and voltage; a first resistance connected to the gate to which the fi rst diode is connected, wherein the avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element, the first diode is connected to the gate of the first element, and the first resistance is connected to the gate of the first element and the source of the second element. element; and a protection diode, a cathode of the protection diode being connected to a source of the first element and the drain of the second element, and an anode of the protection diode being connected to the first resistance and directly connected to the anode of the first diode.
The semiconductor device according to claim 1, further comprising: 2 Application No. 14/023,797 Reply to Office Action of a second diode connected between the gate of the second element and the drain of the second element so that a cathode of the second diode is connected at the drain's side, the second diode having predetermined avalanche withstand voltage; and a second resistance connected to the gate of the second element and a gate terminal connected to outside the semiconductor device. withdrawn
The semiconductor device according to claim 1, wherein the first diode is connected to the gate of the second element, and the first resistance is connected to the gate of the second element and a gate terminal connected to outside the semiconductor device. withdrawn
The semiconductor device according to claim 1, wherein the avalanche withstand voltage of the first diode is lower than collapse-increasing voltage of the first element.
The semiconductor device according to claim 1, wherein the first diode is formed in monolithic manner on a chip including the first element.
canceled
A semiconductor device comprising: a first element which is a normally-on type transistor made of nitride-based compound semiconductor; 3 Application No. 14/023,797 Reply to Office Action of a second element connected to the first element in series and being a diode having withstand voltage between an anode and a cathode which is lower than withstand voltage of the first element; a first diode connected between a gate of the first element and the drain of the first element so that a cathode of the first diode is connected at the drain's side, the first diode having predetermined avalanche withstand voltage; and a first resistance connected between the gate of the first element and the anode of the second element, wherein the avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element. withdrawn
The semiconductor device according to claim 8, wherein the avalanche withstand voltage of the first diode is lower than collapse-increasing voltage of the first element. withdrawn
The semiconductor device according to claim 8, wherein the first diode is formed in monolithic manner on a chip including the first element. 4 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
normally-on GaN-HEMT cascode semiconductor device
normally-on GaN-HEMT cascode semiconductor device with diode second element
Materials described outside the worked examples.
nitride-based compound semiconductor
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≥ 200 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,431,391Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a semiconductor device according to an embodiment 1;
FIG. 2 is a schematic cross-sectional view of HE MT which is a first element constituting the semiconductor device shown in
FIG. 3 is a view explaining characteristics of the semiconductor device shown in
FIG. 4 is a circuit diagram of a semiconductor device according to an embodiment 2;
FIG. 5 is a circuit diagram of a semiconductor device according to an embodiment 3;
FIG. 6 is a view of a configuration in case of forming a diode on a chip;
FIG. 7 is a cross sectional view taken along a line VII -VII in
FIG. 8 is a circuit diagram of a semiconductor device according to an embodiment 4; and
FIG. 9 is a view showing a relation between stress voltage and collapse.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a first element which is a normally-on type transistor made of nitride-based compound semiconductor; semiconductor. the first element being a gallium nitride-high electron mobility transistor (GaN-HEMT) or a junction field effect transistor (FET); a second element connected to the first element in series and being a transistor having withstand voltage between a source and a drain which is lower than withstand voltage of the first element; a first diode connected between a gate of the first element or a gate of the second element and a drain of the first element so that a cathode of the first diode is connected at the drain's side, an anode of the first diode is directly connected to the gate of the first element, and the first diode having predetermined avalanche withstand voltage; and voltage; a first resistance connected to the gate to which the fi rst diode is connected, wherein the avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element, the first diode is connected to the gate of the first element, and the first resistance is connected to the gate of the first element and the source of the second element. element; and a protection diode, a cathode of the protection diode being connected to a source of the first element and the drain of the second element, and an anode of the protection diode being connected to the first resistance and directly connected to the anode of the first diode.
The semiconductor device according to claim 1, further comprising: 2 Application No. 14/023,797 Reply to Office Action of a second diode connected between the gate of the second element and the drain of the second element so that a cathode of the second diode is connected at the drain's side, the second diode having predetermined avalanche withstand voltage; and a second resistance connected to the gate of the second element and a gate terminal connected to outside the semiconductor device. withdrawn
The semiconductor device according to claim 1, wherein the first diode is connected to the gate of the second element, and the first resistance is connected to the gate of the second element and a gate terminal connected to outside the semiconductor device. withdrawn
The semiconductor device according to claim 1, wherein the avalanche withstand voltage of the first diode is lower than collapse-increasing voltage of the first element.
The semiconductor device according to claim 1, wherein the first diode is formed in monolithic manner on a chip including the first element.
canceled
A semiconductor device comprising: a first element which is a normally-on type transistor made of nitride-based compound semiconductor; 3 Application No. 14/023,797 Reply to Office Action of a second element connected to the first element in series and being a diode having withstand voltage between an anode and a cathode which is lower than withstand voltage of the first element; a first diode connected between a gate of the first element and the drain of the first element so that a cathode of the first diode is connected at the drain's side, the first diode having predetermined avalanche withstand voltage; and a first resistance connected between the gate of the first element and the anode of the second element, wherein the avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element. withdrawn
The semiconductor device according to claim 8, wherein the avalanche withstand voltage of the first diode is lower than collapse-increasing voltage of the first element. withdrawn
The semiconductor device according to claim 8, wherein the first diode is formed in monolithic manner on a chip including the first element. 4 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
normally-on GaN-HEMT cascode semiconductor device
normally-on GaN-HEMT cascode semiconductor device with diode second element
Materials described outside the worked examples.
nitride-based compound semiconductor
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≥ 200 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,431,391Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a semiconductor device according to an embodiment 1;
FIG. 2 is a schematic cross-sectional view of HE MT which is a first element constituting the semiconductor device shown in
FIG. 3 is a view explaining characteristics of the semiconductor device shown in
FIG. 4 is a circuit diagram of a semiconductor device according to an embodiment 2;
FIG. 5 is a circuit diagram of a semiconductor device according to an embodiment 3;
FIG. 6 is a view of a configuration in case of forming a diode on a chip;
FIG. 7 is a cross sectional view taken along a line VII -VII in
FIG. 8 is a circuit diagram of a semiconductor device according to an embodiment 4; and
FIG. 9 is a view showing a relation between stress voltage and collapse.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a first element which is a normally-on type transistor made of nitride-based compound semiconductor; semiconductor. the first element being a gallium nitride-high electron mobility transistor (GaN-HEMT) or a junction field effect transistor (FET); a second element connected to the first element in series and being a transistor having withstand voltage between a source and a drain which is lower than withstand voltage of the first element; a first diode connected between a gate of the first element or a gate of the second element and a drain of the first element so that a cathode of the first diode is connected at the drain's side, an anode of the first diode is directly connected to the gate of the first element, and the first diode having predetermined avalanche withstand voltage; and voltage; a first resistance connected to the gate to which the fi rst diode is connected, wherein the avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element, the first diode is connected to the gate of the first element, and the first resistance is connected to the gate of the first element and the source of the second element. element; and a protection diode, a cathode of the protection diode being connected to a source of the first element and the drain of the second element, and an anode of the protection diode being connected to the first resistance and directly connected to the anode of the first diode.
The semiconductor device according to claim 1, further comprising: 2 Application No. 14/023,797 Reply to Office Action of a second diode connected between the gate of the second element and the drain of the second element so that a cathode of the second diode is connected at the drain's side, the second diode having predetermined avalanche withstand voltage; and a second resistance connected to the gate of the second element and a gate terminal connected to outside the semiconductor device. withdrawn
The semiconductor device according to claim 1, wherein the first diode is connected to the gate of the second element, and the first resistance is connected to the gate of the second element and a gate terminal connected to outside the semiconductor device. withdrawn
The semiconductor device according to claim 1, wherein the avalanche withstand voltage of the first diode is lower than collapse-increasing voltage of the first element.
The semiconductor device according to claim 1, wherein the first diode is formed in monolithic manner on a chip including the first element.
canceled
A semiconductor device comprising: a first element which is a normally-on type transistor made of nitride-based compound semiconductor; 3 Application No. 14/023,797 Reply to Office Action of a second element connected to the first element in series and being a diode having withstand voltage between an anode and a cathode which is lower than withstand voltage of the first element; a first diode connected between a gate of the first element and the drain of the first element so that a cathode of the first diode is connected at the drain's side, the first diode having predetermined avalanche withstand voltage; and a first resistance connected between the gate of the first element and the anode of the second element, wherein the avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element. withdrawn
The semiconductor device according to claim 8, wherein the avalanche withstand voltage of the first diode is lower than collapse-increasing voltage of the first element. withdrawn
The semiconductor device according to claim 8, wherein the first diode is formed in monolithic manner on a chip including the first element. 4 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
normally-on GaN-HEMT cascode semiconductor device
normally-on GaN-HEMT cascode semiconductor device with diode second element
Materials described outside the worked examples.
nitride-based compound semiconductor
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≥ 200 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,431,391Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a semiconductor device according to an embodiment 1;
FIG. 2 is a schematic cross-sectional view of HE MT which is a first element constituting the semiconductor device shown in
FIG. 3 is a view explaining characteristics of the semiconductor device shown in
FIG. 4 is a circuit diagram of a semiconductor device according to an embodiment 2;
FIG. 5 is a circuit diagram of a semiconductor device according to an embodiment 3;
FIG. 6 is a view of a configuration in case of forming a diode on a chip;
FIG. 7 is a cross sectional view taken along a line VII -VII in
FIG. 8 is a circuit diagram of a semiconductor device according to an embodiment 4; and
FIG. 9 is a view showing a relation between stress voltage and collapse.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device, comprising: a first element which is a normally-on type transistor made of nitride-based compound semiconductor; semiconductor. the first element being a gallium nitride-high electron mobility transistor (GaN-HEMT) or a junction field effect transistor (FET); a second element connected to the first element in series and being a transistor having withstand voltage between a source and a drain which is lower than withstand voltage of the first element; a first diode connected between a gate of the first element or a gate of the second element and a drain of the first element so that a cathode of the first diode is connected at the drain's side, an anode of the first diode is directly connected to the gate of the first element, and the first diode having predetermined avalanche withstand voltage; and voltage; a first resistance connected to the gate to which the fi rst diode is connected, wherein the avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element, the first diode is connected to the gate of the first element, and the first resistance is connected to the gate of the first element and the source of the second element. element; and a protection diode, a cathode of the protection diode being connected to a source of the first element and the drain of the second element, and an anode of the protection diode being connected to the first resistance and directly connected to the anode of the first diode.
The semiconductor device according to claim 1, further comprising: 2 Application No. 14/023,797 Reply to Office Action of a second diode connected between the gate of the second element and the drain of the second element so that a cathode of the second diode is connected at the drain's side, the second diode having predetermined avalanche withstand voltage; and a second resistance connected to the gate of the second element and a gate terminal connected to outside the semiconductor device. withdrawn
The semiconductor device according to claim 1, wherein the first diode is connected to the gate of the second element, and the first resistance is connected to the gate of the second element and a gate terminal connected to outside the semiconductor device. withdrawn
The semiconductor device according to claim 1, wherein the avalanche withstand voltage of the first diode is lower than collapse-increasing voltage of the first element.
The semiconductor device according to claim 1, wherein the first diode is formed in monolithic manner on a chip including the first element.
canceled
A semiconductor device comprising: a first element which is a normally-on type transistor made of nitride-based compound semiconductor; 3 Application No. 14/023,797 Reply to Office Action of a second element connected to the first element in series and being a diode having withstand voltage between an anode and a cathode which is lower than withstand voltage of the first element; a first diode connected between a gate of the first element and the drain of the first element so that a cathode of the first diode is connected at the drain's side, the first diode having predetermined avalanche withstand voltage; and a first resistance connected between the gate of the first element and the anode of the second element, wherein the avalanche withstand voltage of the first diode is lower than breakdown voltage of the first element. withdrawn
The semiconductor device according to claim 8, wherein the avalanche withstand voltage of the first diode is lower than collapse-increasing voltage of the first element. withdrawn
The semiconductor device according to claim 8, wherein the first diode is formed in monolithic manner on a chip including the first element. 4 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
normally-on GaN-HEMT cascode semiconductor device
normally-on GaN-HEMT cascode semiconductor device with diode second element
Materials described outside the worked examples.
nitride-based compound semiconductor
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≥ 200 V | — |
Voltage |
Related documents with shared materials, methods, properties, or citations.
aluminum gallium nitride (AlGaN)
AlGaN
| — |
aluminum gallium nitride (AlGaN)
AlGaN
| — |
aluminum gallium nitride (AlGaN)
AlGaN
| — |
aluminum gallium nitride (AlGaN)
AlGaN
| — |