A method for making a group I II -nitride field effect device comprising: placing a substrate in a reaction chamber; depositing a first active layer; depositing a second active layer having a higher bandgap when compared to said first active layer, thereby forming a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer; depositing on said second active layer a first passivation layer; depositing directly on said first passivation layer a source contact; depositing directly on said first passivation layer a drain contact; performing a first cleaning step on at least a first part of said first passivation layer, said first part of said first passivation layer being a gate cleaning region; forming a gate contact on at least part of said gate cleaning region; performing a second cleaning step on at least a second part of said first passivation la y er, said at least second part of said first passivation layer being a passivation cleaning region; and depositing a second passivation layer on at least part of said passivation cleaning region.

canceled

The-m ethe d-of-C laim-2 A method for making a group III- nitride field effect device comprising: placing a substrate in a reaction chamber; depositing a first active layer; depositing a second active layer having a higher bandgap when compared to said first active layer, thereby forming a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer -2- Application No.: 12/447867 Filing Date: depositing on said second active layer a first passivation layer depositing directly on said first passivation layer a source contact; depositing directly on said first passivation layer a drain contact; performing a first cleaning step on at least a first part of said first passivation layer, said first part of said first passivation layer being a gate cleaning region; forming a gate contact on at least part of said gate cleaning region; depositing a second passivation layer; and performing a second cleaning step on at least a second part of said first passivation la y er, said at least second part of said first passivation layer being a passivation cleaning region, wherein said second passivation layer is deposited on at least part of said passivation cleaning region, wherein performing said first cleaning step and forming said gate contact are done before performing said second cleaning step and depositing said second passivation step.

The -m ethe d-of-C laim-2 A method for making a group III- nitride field effect device comprising.

A group I II -nitride field effect device comprising: a substrate; a first active layer on the substrate; a second active layer on the first active layer, the second active layer having a higher bandgap when compared to said first active layer; a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer; a first passivation layer on the second active layer; a source contact and a drain contact on the first passivation layer; at least a first part of said first passivation layer having a cleaned surface and a lower thickness than other parts of the first passivation layer, said first part of said first passivation layer being a gate cleaning region; at least a second part of said first passivation layer having a cleaned surface and a lower thickness than other parts of the first passivation layer, said second part of said first passivation layer being a passivation cleaning region; a gate contact on at least part of said gate cleaning region; and a second passivation layer deposited on at least part of said passivation cleaning region.

A method for making a group I II -nitride field effect device comprising: placing a substrate in a reaction chamber; depositing a first active layer; depositing a second active layer having a higher bandgap when compared to said first active layer, thereby forming a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer; depositing on said second active layer a first passivation layer; depositing directly on said first passivation layer a source contact; depositing directly on said first passivation layer a drain contact; performing a first cleaning step on at least a first part of said first passivation layer, said first part of said first passivation layer being a gate cleaning region; forming a gate contact on at least part of said gate cleaning region; performing a second cleaning step on at least a second part of said first passivation la y er, said at least second part of said first passivation layer being a passivation cleaning region; and depositing a second passivation layer on at least part of said passivation cleaning region.

canceled

The-m ethe d-of-C laim-2 A method for making a group III- nitride field effect device comprising: placing a substrate in a reaction chamber; depositing a first active layer; depositing a second active layer having a higher bandgap when compared to said first active layer, thereby forming a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer -2- Application No.: 12/447867 Filing Date: depositing on said second active layer a first passivation layer depositing directly on said first passivation layer a source contact; depositing directly on said first passivation layer a drain contact; performing a first cleaning step on at least a first part of said first passivation layer, said first part of said first passivation layer being a gate cleaning region; forming a gate contact on at least part of said gate cleaning region; depositing a second passivation layer; and performing a second cleaning step on at least a second part of said first passivation la y er, said at least second part of said first passivation layer being a passivation cleaning region, wherein said second passivation layer is deposited on at least part of said passivation cleaning region, wherein performing said first cleaning step and forming said gate contact are done before performing said second cleaning step and depositing said second passivation step.

The -m ethe d-of-C laim-2 A method for making a group III- nitride field effect device comprising.

A group I II -nitride field effect device comprising: a substrate; a first active layer on the substrate; a second active layer on the first active layer, the second active layer having a higher bandgap when compared to said first active layer; a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer; a first passivation layer on the second active layer; a source contact and a drain contact on the first passivation layer; at least a first part of said first passivation layer having a cleaned surface and a lower thickness than other parts of the first passivation layer, said first part of said first passivation layer being a gate cleaning region; at least a second part of said first passivation layer having a cleaned surface and a lower thickness than other parts of the first passivation layer, said second part of said first passivation layer being a passivation cleaning region; a gate contact on at least part of said gate cleaning region; and a second passivation layer deposited on at least part of said passivation cleaning region.

A method for making a group I II -nitride field effect device comprising: placing a substrate in a reaction chamber; depositing a first active layer; depositing a second active layer having a higher bandgap when compared to said first active layer, thereby forming a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer; depositing on said second active layer a first passivation layer; depositing directly on said first passivation layer a source contact; depositing directly on said first passivation layer a drain contact; performing a first cleaning step on at least a first part of said first passivation layer, said first part of said first passivation layer being a gate cleaning region; forming a gate contact on at least part of said gate cleaning region; performing a second cleaning step on at least a second part of said first passivation la y er, said at least second part of said first passivation layer being a passivation cleaning region; and depositing a second passivation layer on at least part of said passivation cleaning region.

canceled

The-m ethe d-of-C laim-2 A method for making a group III- nitride field effect device comprising: placing a substrate in a reaction chamber; depositing a first active layer; depositing a second active layer having a higher bandgap when compared to said first active layer, thereby forming a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer -2- Application No.: 12/447867 Filing Date: depositing on said second active layer a first passivation layer depositing directly on said first passivation layer a source contact; depositing directly on said first passivation layer a drain contact; performing a first cleaning step on at least a first part of said first passivation layer, said first part of said first passivation layer being a gate cleaning region; forming a gate contact on at least part of said gate cleaning region; depositing a second passivation layer; and performing a second cleaning step on at least a second part of said first passivation la y er, said at least second part of said first passivation layer being a passivation cleaning region, wherein said second passivation layer is deposited on at least part of said passivation cleaning region, wherein performing said first cleaning step and forming said gate contact are done before performing said second cleaning step and depositing said second passivation step.

The -m ethe d-of-C laim-2 A method for making a group III- nitride field effect device comprising.

A group I II -nitride field effect device comprising: a substrate; a first active layer on the substrate; a second active layer on the first active layer, the second active layer having a higher bandgap when compared to said first active layer; a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer; a first passivation layer on the second active layer; a source contact and a drain contact on the first passivation layer; at least a first part of said first passivation layer having a cleaned surface and a lower thickness than other parts of the first passivation layer, said first part of said first passivation layer being a gate cleaning region; at least a second part of said first passivation layer having a cleaned surface and a lower thickness than other parts of the first passivation layer, said second part of said first passivation layer being a passivation cleaning region; a gate contact on at least part of said gate cleaning region; and a second passivation layer deposited on at least part of said passivation cleaning region.

A method for making a group I II -nitride field effect device comprising: placing a substrate in a reaction chamber; depositing a first active layer; depositing a second active layer having a higher bandgap when compared to said first active layer, thereby forming a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer; depositing on said second active layer a first passivation layer; depositing directly on said first passivation layer a source contact; depositing directly on said first passivation layer a drain contact; performing a first cleaning step on at least a first part of said first passivation layer, said first part of said first passivation layer being a gate cleaning region; forming a gate contact on at least part of said gate cleaning region; performing a second cleaning step on at least a second part of said first passivation la y er, said at least second part of said first passivation layer being a passivation cleaning region; and depositing a second passivation layer on at least part of said passivation cleaning region.

canceled

The-m ethe d-of-C laim-2 A method for making a group III- nitride field effect device comprising: placing a substrate in a reaction chamber; depositing a first active layer; depositing a second active layer having a higher bandgap when compared to said first active layer, thereby forming a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer -2- Application No.: 12/447867 Filing Date: depositing on said second active layer a first passivation layer depositing directly on said first passivation layer a source contact; depositing directly on said first passivation layer a drain contact; performing a first cleaning step on at least a first part of said first passivation layer, said first part of said first passivation layer being a gate cleaning region; forming a gate contact on at least part of said gate cleaning region; depositing a second passivation layer; and performing a second cleaning step on at least a second part of said first passivation la y er, said at least second part of said first passivation layer being a passivation cleaning region, wherein said second passivation layer is deposited on at least part of said passivation cleaning region, wherein performing said first cleaning step and forming said gate contact are done before performing said second cleaning step and depositing said second passivation step.

The -m ethe d-of-C laim-2 A method for making a group III- nitride field effect device comprising.

A group I II -nitride field effect device comprising: a substrate; a first active layer on the substrate; a second active layer on the first active layer, the second active layer having a higher bandgap when compared to said first active layer; a two-dimensional electron gas layer at or near an interface between said first active layer and said second active layer; a first passivation layer on the second active layer; a source contact and a drain contact on the first passivation layer; at least a first part of said first passivation layer having a cleaned surface and a lower thickness than other parts of the first passivation layer, said first part of said first passivation layer being a gate cleaning region; at least a second part of said first passivation layer having a cleaned surface and a lower thickness than other parts of the first passivation layer, said second part of said first passivation layer being a passivation cleaning region; a gate contact on at least part of said gate cleaning region; and a second passivation layer deposited on at least part of said passivation cleaning region.