Patent
US 10,896,981INTEGRATION OF VERTICAL GAN VARACTOR WITH HEMT
Gengming TAO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,896,981Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a diagram illustrating a vertical P-N junction varactor integrated with a H-EM T in the same device.
Figure 2 is a first alternative to a vertical P-N junction varactor integrated with a HEMT. [0021 1
Figure 3 is a second alternative to a vertical P-N junction varactor integrated with a HEMT.
Figure 4 is a third alternative to a vertical P-N juncti o n varact o r integrated with a HEMT.
Figure 5 i s a fourth alternative to a vert ic al P-N juncti o n varact o r integrated with a HEMT.
Figures 6A-6G illustrate a series of exemplary operations for fabricating an integrated varactor and HEMT device according to at least one aspect of the disclosure. [0
Figure 7 illustrates an RF module that may include a varactor integrated with a HEMT.
Figure 8 illustrates various electronic devices that may include a varactor integrated with a HEMT. [0027 The drawings may not depict all components o f a particular apparatus, structure, or method. Further, like reference numerals denote like features throughout the speci fi cati o n and fi gures.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit comprising: a substrate; a buffer layer on the substrate; a varactor on a first portion of the buffer layer, the varactor comprising: a first gallium nitride (GaN) layer doped with a P-type dopant (P+ GaN layer) on the first portion of the buffer layer; a first stack of layers on the first P+ GaN layer, the first stack of layers comprising: a first varactor layer comprising a first material comprising a GaN compound, the first material doped to a first concentration of N-type dopant; and a second varactor layer comprising a second material comprising a GaN compound, the second material doped to a second concentration of the N-type dopant; a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first stack of layers; and a second contact coupled to the second varactor layer; and a high electron mobility transistor (HEMT) comprising: a second P+ GaN layer on a second portion of the buffer layer electrically isolated from the first P+ GaN layer; a second stack of layers on the second P+ GaN layer, the second stack of layers comprising: a first HEMT layer comprising the first material doped to the first concentration of the N-type dopant; and a second HEMT layer comprising the second material doped to the second concentration of the N-type dopant; a third contact coupled to a first portion of the second HEMT layer; a fourth contact coupled to a second portion of the second HEMT layer; and Page 2 of 15 a fifth contact coupled to a third portion of the second HEMT layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other,. Currently amended
The integrated circuit of claim 1, wherein: + + + + [[a]] the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer } + +, and the first N- varactor layer is electrically isolated from the-first HEMT layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N-type dopant (N AlGaN layer }-, and the-second varactor layer is electrically isolated from the second N- HEMT layer +--. Currently amended
The integrated circuit of claim 1, wherein: + the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer }, having a non-uniform doping profile, on a portion of the first P+ GaN layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N- type dopant (N AlGaN layer } on the N- first varactor layer +-SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.2.svg 0.15 0.82 Black and white-,,,,. Currently amended
An integrated circuit comprising: a varacator comprising; a P+ GaN layer; [[a]] a N- GaN layer on the P+ GaN layer; [[a]] a N- AlGaN layer on the P+ GaN layer; a first contact coupled to the P+ GaN layer; and a second contact coupled to the N-AI GaN layer; and a high electron mobility transistor (HEMT) comprising; a P+ GaN layer coplanar with the P+ GaN layer of the varactor; [[a]] a n N GaN layer on the P+ GaN layer, the N GaN layer coplanar with the N GaN layer of the varactor; [[a]] an N AlGaN layer on the P+ GaN layer, the N AlGaN layer coplanar with the N AlGaN layer of the varactor; and a third contact, a fourth contact, and a fifth contact coupled to the N AlGaN layer, the third, fourth, and fifth contacts electrically isolated from each other and the fourth contact between the third and fifth contacts. Currently amended
The integrated circuit of claim 8, wherein the N-GaN layers have non-uniform doping profiles. Original
The integrated circuit of claim 8. further comprisin g: the varactor comprising a P GaN layer between the P + GaN layer and the N GaN N layer; and the HEMT comprising a P GaN layer between the P+ GaN layer and the N GaN layer; wherein the F GaN layer of the varactor and the [[HEMT]] P GaN layer of the HEMT are co-planar. Currently amended
The integrated circuit of claim 8, further comprising: the HEMT comprising [[a]] an N InGaN layer between the N AlGaN layer and the third, fourth, and fifth contacts; and the varactor comprising [[a]] a n N InGaN layer between the N AlGaN layer and the second contact; wherein the [[HEMT]] N InGaN layer of the HEMT and the N InGaN layer of the varactor are co-planar. Currently amended
A radio frequency (RF) module comprising: a single die comprising a substrate; a buffer layer on the substrate; a varactor on a first portion of the buffer layer, the varactor comprising: a first gallium nitride (GaN) layer doped with a P-type dopant (P+ GaN layer) on the first portion of the buffer layer; and a first stack of layers on the first P+ GaN layer, the first stack of layers comprising: a first varactor layer comprising a first material comprising a GaN compound, the first material doped to a first concentration of N- type dopant; and a second varactor layer comprising a second material comprising a GaN compound, the second material doped to a second concentration of the N-type dopant; a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first stack of layers; and a second contact coupled to the second varactor layer; and a high electron mobility transistor (HEMT) comprising: a second P+ GaN layer on a second portion of the buffer layer; and a second stack of layers on the second P+ GaN layer, the second stack of layers comprising: Page 6 of 15 a first HEMT layer comprising the first material doped to the first concentration of the N-type dopant; and a second HEMT layer comprising the second material doped to the second concentration of the N-type dopant; a third contact coupled to a first portion of the second HEMT layer; a fourth contact coupled to a second portion of the second HEMT layer; and a fifth contact coupled to a third portion of the second HEMT layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other, wherein: [[a]] the HEMT is configured to receive an RF signal and output an amplified RF signal; and [[a]] the varactor is configured to couple the amplified RF signal to a load,. Currently amended
The RF module of claim 12, wherein: + + + + [[a]] the first varactor layer comprises a GaN layer doped with the N-type dopant (N-GaN layer } +-+, and the first N-varactor layer i electrically isolated from the-first HEMT layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N-type dopant (N-AlGaN layer }, and the second varactor layer is electrically isolated from the second N- HEMT layer Page 7 of 15 +--. Currently amended
The RF module of claim 12, wherein: SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.3.svg 0.15 0.82 Black and white + the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer }, having a non-uniform doping profile, on a portion of the first P+ GaN layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N- type dopant N- AlGaN layer } on the N- first varactor layer +--. Currently amended
The RF module of claim 12, wherein the RF signal is a 5G RF signal. Original
The RF module of claim 12, wherein the HEMT is included in an RF power amplifier. Original
A method of manufacturing a device with a varactor integrated with a high electron mobility transistor (HEMT }, the method comprising: forming a substrate; forming a buffer layer on the substrate; forming a first P+ GaN layer on a first portion of the buffer layer and forming a second P+ GaN layer on a second portion of the buffer layer, the first P+ GaN layer electrically isolated from the second P+ GaN layer; SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.4.svg 0.15 0.82 Black and white forming a first N GaN layer on a portion of the first P+ GaN layer and forming a second N GaN layer on the second P+ GaN layer, the first N GaN layer electrically isolated from the second N GaN layer; forming a first N AlGaN layer on the first N GaN layer and forming a second N AlGaN layer on the second N GaN layer, the first N AlGaN layer electrically isolated from the second N AlGaN layer; and forming a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first N GaN layer, forming a second contact coupled to the first N AlGaN layer, forming a third contact coupled to a first portion of the second N AlGaN layer, forming a fourth contact coupled to a second portion of the second N AlGaN layer, and forming a fifth contact coupled to a third portion of the second N AlGaN layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other. Currently amended
The method of claim 21, wherein the first N GaN layer and the second N GaN layer have nonuniform doping profiles. Original
The method of claim 21, further comprising: forming a first P GaN layer between the first P+ GaN layer and the first N GaN layer; and forming a second P GaN layer between the second P+ GaN layer and the second N GaN layer. Original
The method of claim 21, further comprising: forming a second N InGaN layer between the second N AlGaN layer and the third, fourth, and fifth contacts; and forming a first N InGaN layer between the first N AlGaN layer and the second contact. Currently amended
A method of manufacturing a device with a varactor integrated with a high electron mobility transistor (HEMT j, the method comprising: forming a substrate; forming a buffer layer on the s u bstrate; forming a P+ GaN layer on the buffer layer; forming [[a]] an N " GaN layer, having a non-uniform doping profile, on a portion of the P+ GaN layer; forming an N-AI GaN layer on the N-GaN layer; and for min g a first contact coupled to a portion of the P+ GaN layer, the first contact electrically isolated from the N-GaN layer. forming a second contact coupled to a first portion of the N-AlGaN layer. for m ing a third contact coupled to a second portion of the N-AlGaN layer. and forming a fourth contact coupled to a third portion of the N-AlGaN layer. the fourth contact located between the second and third contacts, the second, third. and fourth contacts electrically isolated from each other. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN P-N junction varactor integrated with HEMT (varactor portion)
GaN high electron mobility transistor (HEMT)
Materials described outside the worked examples.
P+ GaN
GaN
N- AlGaN
AlGaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,896,981Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a diagram illustrating a vertical P-N junction varactor integrated with a H-EM T in the same device.
Figure 2 is a first alternative to a vertical P-N junction varactor integrated with a HEMT. [0021 1
Figure 3 is a second alternative to a vertical P-N junction varactor integrated with a HEMT.
Figure 4 is a third alternative to a vertical P-N juncti o n varact o r integrated with a HEMT.
Figure 5 i s a fourth alternative to a vert ic al P-N juncti o n varact o r integrated with a HEMT.
Figures 6A-6G illustrate a series of exemplary operations for fabricating an integrated varactor and HEMT device according to at least one aspect of the disclosure. [0
Figure 7 illustrates an RF module that may include a varactor integrated with a HEMT.
Figure 8 illustrates various electronic devices that may include a varactor integrated with a HEMT. [0027 The drawings may not depict all components o f a particular apparatus, structure, or method. Further, like reference numerals denote like features throughout the speci fi cati o n and fi gures.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit comprising: a substrate; a buffer layer on the substrate; a varactor on a first portion of the buffer layer, the varactor comprising: a first gallium nitride (GaN) layer doped with a P-type dopant (P+ GaN layer) on the first portion of the buffer layer; a first stack of layers on the first P+ GaN layer, the first stack of layers comprising: a first varactor layer comprising a first material comprising a GaN compound, the first material doped to a first concentration of N-type dopant; and a second varactor layer comprising a second material comprising a GaN compound, the second material doped to a second concentration of the N-type dopant; a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first stack of layers; and a second contact coupled to the second varactor layer; and a high electron mobility transistor (HEMT) comprising: a second P+ GaN layer on a second portion of the buffer layer electrically isolated from the first P+ GaN layer; a second stack of layers on the second P+ GaN layer, the second stack of layers comprising: a first HEMT layer comprising the first material doped to the first concentration of the N-type dopant; and a second HEMT layer comprising the second material doped to the second concentration of the N-type dopant; a third contact coupled to a first portion of the second HEMT layer; a fourth contact coupled to a second portion of the second HEMT layer; and Page 2 of 15 a fifth contact coupled to a third portion of the second HEMT layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other,. Currently amended
The integrated circuit of claim 1, wherein: + + + + [[a]] the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer } + +, and the first N- varactor layer is electrically isolated from the-first HEMT layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N-type dopant (N AlGaN layer }-, and the-second varactor layer is electrically isolated from the second N- HEMT layer +--. Currently amended
The integrated circuit of claim 1, wherein: + the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer }, having a non-uniform doping profile, on a portion of the first P+ GaN layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N- type dopant (N AlGaN layer } on the N- first varactor layer +-SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.2.svg 0.15 0.82 Black and white-,,,,. Currently amended
An integrated circuit comprising: a varacator comprising; a P+ GaN layer; [[a]] a N- GaN layer on the P+ GaN layer; [[a]] a N- AlGaN layer on the P+ GaN layer; a first contact coupled to the P+ GaN layer; and a second contact coupled to the N-AI GaN layer; and a high electron mobility transistor (HEMT) comprising; a P+ GaN layer coplanar with the P+ GaN layer of the varactor; [[a]] a n N GaN layer on the P+ GaN layer, the N GaN layer coplanar with the N GaN layer of the varactor; [[a]] an N AlGaN layer on the P+ GaN layer, the N AlGaN layer coplanar with the N AlGaN layer of the varactor; and a third contact, a fourth contact, and a fifth contact coupled to the N AlGaN layer, the third, fourth, and fifth contacts electrically isolated from each other and the fourth contact between the third and fifth contacts. Currently amended
The integrated circuit of claim 8, wherein the N-GaN layers have non-uniform doping profiles. Original
The integrated circuit of claim 8. further comprisin g: the varactor comprising a P GaN layer between the P + GaN layer and the N GaN N layer; and the HEMT comprising a P GaN layer between the P+ GaN layer and the N GaN layer; wherein the F GaN layer of the varactor and the [[HEMT]] P GaN layer of the HEMT are co-planar. Currently amended
The integrated circuit of claim 8, further comprising: the HEMT comprising [[a]] an N InGaN layer between the N AlGaN layer and the third, fourth, and fifth contacts; and the varactor comprising [[a]] a n N InGaN layer between the N AlGaN layer and the second contact; wherein the [[HEMT]] N InGaN layer of the HEMT and the N InGaN layer of the varactor are co-planar. Currently amended
A radio frequency (RF) module comprising: a single die comprising a substrate; a buffer layer on the substrate; a varactor on a first portion of the buffer layer, the varactor comprising: a first gallium nitride (GaN) layer doped with a P-type dopant (P+ GaN layer) on the first portion of the buffer layer; and a first stack of layers on the first P+ GaN layer, the first stack of layers comprising: a first varactor layer comprising a first material comprising a GaN compound, the first material doped to a first concentration of N- type dopant; and a second varactor layer comprising a second material comprising a GaN compound, the second material doped to a second concentration of the N-type dopant; a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first stack of layers; and a second contact coupled to the second varactor layer; and a high electron mobility transistor (HEMT) comprising: a second P+ GaN layer on a second portion of the buffer layer; and a second stack of layers on the second P+ GaN layer, the second stack of layers comprising: Page 6 of 15 a first HEMT layer comprising the first material doped to the first concentration of the N-type dopant; and a second HEMT layer comprising the second material doped to the second concentration of the N-type dopant; a third contact coupled to a first portion of the second HEMT layer; a fourth contact coupled to a second portion of the second HEMT layer; and a fifth contact coupled to a third portion of the second HEMT layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other, wherein: [[a]] the HEMT is configured to receive an RF signal and output an amplified RF signal; and [[a]] the varactor is configured to couple the amplified RF signal to a load,. Currently amended
The RF module of claim 12, wherein: + + + + [[a]] the first varactor layer comprises a GaN layer doped with the N-type dopant (N-GaN layer } +-+, and the first N-varactor layer i electrically isolated from the-first HEMT layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N-type dopant (N-AlGaN layer }, and the second varactor layer is electrically isolated from the second N- HEMT layer Page 7 of 15 +--. Currently amended
The RF module of claim 12, wherein: SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.3.svg 0.15 0.82 Black and white + the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer }, having a non-uniform doping profile, on a portion of the first P+ GaN layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N- type dopant N- AlGaN layer } on the N- first varactor layer +--. Currently amended
The RF module of claim 12, wherein the RF signal is a 5G RF signal. Original
The RF module of claim 12, wherein the HEMT is included in an RF power amplifier. Original
A method of manufacturing a device with a varactor integrated with a high electron mobility transistor (HEMT }, the method comprising: forming a substrate; forming a buffer layer on the substrate; forming a first P+ GaN layer on a first portion of the buffer layer and forming a second P+ GaN layer on a second portion of the buffer layer, the first P+ GaN layer electrically isolated from the second P+ GaN layer; SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.4.svg 0.15 0.82 Black and white forming a first N GaN layer on a portion of the first P+ GaN layer and forming a second N GaN layer on the second P+ GaN layer, the first N GaN layer electrically isolated from the second N GaN layer; forming a first N AlGaN layer on the first N GaN layer and forming a second N AlGaN layer on the second N GaN layer, the first N AlGaN layer electrically isolated from the second N AlGaN layer; and forming a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first N GaN layer, forming a second contact coupled to the first N AlGaN layer, forming a third contact coupled to a first portion of the second N AlGaN layer, forming a fourth contact coupled to a second portion of the second N AlGaN layer, and forming a fifth contact coupled to a third portion of the second N AlGaN layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other. Currently amended
The method of claim 21, wherein the first N GaN layer and the second N GaN layer have nonuniform doping profiles. Original
The method of claim 21, further comprising: forming a first P GaN layer between the first P+ GaN layer and the first N GaN layer; and forming a second P GaN layer between the second P+ GaN layer and the second N GaN layer. Original
The method of claim 21, further comprising: forming a second N InGaN layer between the second N AlGaN layer and the third, fourth, and fifth contacts; and forming a first N InGaN layer between the first N AlGaN layer and the second contact. Currently amended
A method of manufacturing a device with a varactor integrated with a high electron mobility transistor (HEMT j, the method comprising: forming a substrate; forming a buffer layer on the s u bstrate; forming a P+ GaN layer on the buffer layer; forming [[a]] an N " GaN layer, having a non-uniform doping profile, on a portion of the P+ GaN layer; forming an N-AI GaN layer on the N-GaN layer; and for min g a first contact coupled to a portion of the P+ GaN layer, the first contact electrically isolated from the N-GaN layer. forming a second contact coupled to a first portion of the N-AlGaN layer. for m ing a third contact coupled to a second portion of the N-AlGaN layer. and forming a fourth contact coupled to a third portion of the N-AlGaN layer. the fourth contact located between the second and third contacts, the second, third. and fourth contacts electrically isolated from each other. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN P-N junction varactor integrated with HEMT (varactor portion)
GaN high electron mobility transistor (HEMT)
Materials described outside the worked examples.
P+ GaN
GaN
N- AlGaN
AlGaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,896,981Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a diagram illustrating a vertical P-N junction varactor integrated with a H-EM T in the same device.
Figure 2 is a first alternative to a vertical P-N junction varactor integrated with a HEMT. [0021 1
Figure 3 is a second alternative to a vertical P-N junction varactor integrated with a HEMT.
Figure 4 is a third alternative to a vertical P-N juncti o n varact o r integrated with a HEMT.
Figure 5 i s a fourth alternative to a vert ic al P-N juncti o n varact o r integrated with a HEMT.
Figures 6A-6G illustrate a series of exemplary operations for fabricating an integrated varactor and HEMT device according to at least one aspect of the disclosure. [0
Figure 7 illustrates an RF module that may include a varactor integrated with a HEMT.
Figure 8 illustrates various electronic devices that may include a varactor integrated with a HEMT. [0027 The drawings may not depict all components o f a particular apparatus, structure, or method. Further, like reference numerals denote like features throughout the speci fi cati o n and fi gures.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit comprising: a substrate; a buffer layer on the substrate; a varactor on a first portion of the buffer layer, the varactor comprising: a first gallium nitride (GaN) layer doped with a P-type dopant (P+ GaN layer) on the first portion of the buffer layer; a first stack of layers on the first P+ GaN layer, the first stack of layers comprising: a first varactor layer comprising a first material comprising a GaN compound, the first material doped to a first concentration of N-type dopant; and a second varactor layer comprising a second material comprising a GaN compound, the second material doped to a second concentration of the N-type dopant; a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first stack of layers; and a second contact coupled to the second varactor layer; and a high electron mobility transistor (HEMT) comprising: a second P+ GaN layer on a second portion of the buffer layer electrically isolated from the first P+ GaN layer; a second stack of layers on the second P+ GaN layer, the second stack of layers comprising: a first HEMT layer comprising the first material doped to the first concentration of the N-type dopant; and a second HEMT layer comprising the second material doped to the second concentration of the N-type dopant; a third contact coupled to a first portion of the second HEMT layer; a fourth contact coupled to a second portion of the second HEMT layer; and Page 2 of 15 a fifth contact coupled to a third portion of the second HEMT layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other,. Currently amended
The integrated circuit of claim 1, wherein: + + + + [[a]] the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer } + +, and the first N- varactor layer is electrically isolated from the-first HEMT layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N-type dopant (N AlGaN layer }-, and the-second varactor layer is electrically isolated from the second N- HEMT layer +--. Currently amended
The integrated circuit of claim 1, wherein: + the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer }, having a non-uniform doping profile, on a portion of the first P+ GaN layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N- type dopant (N AlGaN layer } on the N- first varactor layer +-SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.2.svg 0.15 0.82 Black and white-,,,,. Currently amended
An integrated circuit comprising: a varacator comprising; a P+ GaN layer; [[a]] a N- GaN layer on the P+ GaN layer; [[a]] a N- AlGaN layer on the P+ GaN layer; a first contact coupled to the P+ GaN layer; and a second contact coupled to the N-AI GaN layer; and a high electron mobility transistor (HEMT) comprising; a P+ GaN layer coplanar with the P+ GaN layer of the varactor; [[a]] a n N GaN layer on the P+ GaN layer, the N GaN layer coplanar with the N GaN layer of the varactor; [[a]] an N AlGaN layer on the P+ GaN layer, the N AlGaN layer coplanar with the N AlGaN layer of the varactor; and a third contact, a fourth contact, and a fifth contact coupled to the N AlGaN layer, the third, fourth, and fifth contacts electrically isolated from each other and the fourth contact between the third and fifth contacts. Currently amended
The integrated circuit of claim 8, wherein the N-GaN layers have non-uniform doping profiles. Original
The integrated circuit of claim 8. further comprisin g: the varactor comprising a P GaN layer between the P + GaN layer and the N GaN N layer; and the HEMT comprising a P GaN layer between the P+ GaN layer and the N GaN layer; wherein the F GaN layer of the varactor and the [[HEMT]] P GaN layer of the HEMT are co-planar. Currently amended
The integrated circuit of claim 8, further comprising: the HEMT comprising [[a]] an N InGaN layer between the N AlGaN layer and the third, fourth, and fifth contacts; and the varactor comprising [[a]] a n N InGaN layer between the N AlGaN layer and the second contact; wherein the [[HEMT]] N InGaN layer of the HEMT and the N InGaN layer of the varactor are co-planar. Currently amended
A radio frequency (RF) module comprising: a single die comprising a substrate; a buffer layer on the substrate; a varactor on a first portion of the buffer layer, the varactor comprising: a first gallium nitride (GaN) layer doped with a P-type dopant (P+ GaN layer) on the first portion of the buffer layer; and a first stack of layers on the first P+ GaN layer, the first stack of layers comprising: a first varactor layer comprising a first material comprising a GaN compound, the first material doped to a first concentration of N- type dopant; and a second varactor layer comprising a second material comprising a GaN compound, the second material doped to a second concentration of the N-type dopant; a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first stack of layers; and a second contact coupled to the second varactor layer; and a high electron mobility transistor (HEMT) comprising: a second P+ GaN layer on a second portion of the buffer layer; and a second stack of layers on the second P+ GaN layer, the second stack of layers comprising: Page 6 of 15 a first HEMT layer comprising the first material doped to the first concentration of the N-type dopant; and a second HEMT layer comprising the second material doped to the second concentration of the N-type dopant; a third contact coupled to a first portion of the second HEMT layer; a fourth contact coupled to a second portion of the second HEMT layer; and a fifth contact coupled to a third portion of the second HEMT layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other, wherein: [[a]] the HEMT is configured to receive an RF signal and output an amplified RF signal; and [[a]] the varactor is configured to couple the amplified RF signal to a load,. Currently amended
The RF module of claim 12, wherein: + + + + [[a]] the first varactor layer comprises a GaN layer doped with the N-type dopant (N-GaN layer } +-+, and the first N-varactor layer i electrically isolated from the-first HEMT layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N-type dopant (N-AlGaN layer }, and the second varactor layer is electrically isolated from the second N- HEMT layer Page 7 of 15 +--. Currently amended
The RF module of claim 12, wherein: SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.3.svg 0.15 0.82 Black and white + the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer }, having a non-uniform doping profile, on a portion of the first P+ GaN layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N- type dopant N- AlGaN layer } on the N- first varactor layer +--. Currently amended
The RF module of claim 12, wherein the RF signal is a 5G RF signal. Original
The RF module of claim 12, wherein the HEMT is included in an RF power amplifier. Original
A method of manufacturing a device with a varactor integrated with a high electron mobility transistor (HEMT }, the method comprising: forming a substrate; forming a buffer layer on the substrate; forming a first P+ GaN layer on a first portion of the buffer layer and forming a second P+ GaN layer on a second portion of the buffer layer, the first P+ GaN layer electrically isolated from the second P+ GaN layer; SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.4.svg 0.15 0.82 Black and white forming a first N GaN layer on a portion of the first P+ GaN layer and forming a second N GaN layer on the second P+ GaN layer, the first N GaN layer electrically isolated from the second N GaN layer; forming a first N AlGaN layer on the first N GaN layer and forming a second N AlGaN layer on the second N GaN layer, the first N AlGaN layer electrically isolated from the second N AlGaN layer; and forming a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first N GaN layer, forming a second contact coupled to the first N AlGaN layer, forming a third contact coupled to a first portion of the second N AlGaN layer, forming a fourth contact coupled to a second portion of the second N AlGaN layer, and forming a fifth contact coupled to a third portion of the second N AlGaN layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other. Currently amended
The method of claim 21, wherein the first N GaN layer and the second N GaN layer have nonuniform doping profiles. Original
The method of claim 21, further comprising: forming a first P GaN layer between the first P+ GaN layer and the first N GaN layer; and forming a second P GaN layer between the second P+ GaN layer and the second N GaN layer. Original
The method of claim 21, further comprising: forming a second N InGaN layer between the second N AlGaN layer and the third, fourth, and fifth contacts; and forming a first N InGaN layer between the first N AlGaN layer and the second contact. Currently amended
A method of manufacturing a device with a varactor integrated with a high electron mobility transistor (HEMT j, the method comprising: forming a substrate; forming a buffer layer on the s u bstrate; forming a P+ GaN layer on the buffer layer; forming [[a]] an N " GaN layer, having a non-uniform doping profile, on a portion of the P+ GaN layer; forming an N-AI GaN layer on the N-GaN layer; and for min g a first contact coupled to a portion of the P+ GaN layer, the first contact electrically isolated from the N-GaN layer. forming a second contact coupled to a first portion of the N-AlGaN layer. for m ing a third contact coupled to a second portion of the N-AlGaN layer. and forming a fourth contact coupled to a third portion of the N-AlGaN layer. the fourth contact located between the second and third contacts, the second, third. and fourth contacts electrically isolated from each other. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN P-N junction varactor integrated with HEMT (varactor portion)
GaN high electron mobility transistor (HEMT)
Materials described outside the worked examples.
P+ GaN
GaN
N- AlGaN
AlGaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,896,981Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a diagram illustrating a vertical P-N junction varactor integrated with a H-EM T in the same device.
Figure 2 is a first alternative to a vertical P-N junction varactor integrated with a HEMT. [0021 1
Figure 3 is a second alternative to a vertical P-N junction varactor integrated with a HEMT.
Figure 4 is a third alternative to a vertical P-N juncti o n varact o r integrated with a HEMT.
Figure 5 i s a fourth alternative to a vert ic al P-N juncti o n varact o r integrated with a HEMT.
Figures 6A-6G illustrate a series of exemplary operations for fabricating an integrated varactor and HEMT device according to at least one aspect of the disclosure. [0
Figure 7 illustrates an RF module that may include a varactor integrated with a HEMT.
Figure 8 illustrates various electronic devices that may include a varactor integrated with a HEMT. [0027 The drawings may not depict all components o f a particular apparatus, structure, or method. Further, like reference numerals denote like features throughout the speci fi cati o n and fi gures.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit comprising: a substrate; a buffer layer on the substrate; a varactor on a first portion of the buffer layer, the varactor comprising: a first gallium nitride (GaN) layer doped with a P-type dopant (P+ GaN layer) on the first portion of the buffer layer; a first stack of layers on the first P+ GaN layer, the first stack of layers comprising: a first varactor layer comprising a first material comprising a GaN compound, the first material doped to a first concentration of N-type dopant; and a second varactor layer comprising a second material comprising a GaN compound, the second material doped to a second concentration of the N-type dopant; a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first stack of layers; and a second contact coupled to the second varactor layer; and a high electron mobility transistor (HEMT) comprising: a second P+ GaN layer on a second portion of the buffer layer electrically isolated from the first P+ GaN layer; a second stack of layers on the second P+ GaN layer, the second stack of layers comprising: a first HEMT layer comprising the first material doped to the first concentration of the N-type dopant; and a second HEMT layer comprising the second material doped to the second concentration of the N-type dopant; a third contact coupled to a first portion of the second HEMT layer; a fourth contact coupled to a second portion of the second HEMT layer; and Page 2 of 15 a fifth contact coupled to a third portion of the second HEMT layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other,. Currently amended
The integrated circuit of claim 1, wherein: + + + + [[a]] the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer } + +, and the first N- varactor layer is electrically isolated from the-first HEMT layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N-type dopant (N AlGaN layer }-, and the-second varactor layer is electrically isolated from the second N- HEMT layer +--. Currently amended
The integrated circuit of claim 1, wherein: + the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer }, having a non-uniform doping profile, on a portion of the first P+ GaN layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N- type dopant (N AlGaN layer } on the N- first varactor layer +-SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.2.svg 0.15 0.82 Black and white-,,,,. Currently amended
An integrated circuit comprising: a varacator comprising; a P+ GaN layer; [[a]] a N- GaN layer on the P+ GaN layer; [[a]] a N- AlGaN layer on the P+ GaN layer; a first contact coupled to the P+ GaN layer; and a second contact coupled to the N-AI GaN layer; and a high electron mobility transistor (HEMT) comprising; a P+ GaN layer coplanar with the P+ GaN layer of the varactor; [[a]] a n N GaN layer on the P+ GaN layer, the N GaN layer coplanar with the N GaN layer of the varactor; [[a]] an N AlGaN layer on the P+ GaN layer, the N AlGaN layer coplanar with the N AlGaN layer of the varactor; and a third contact, a fourth contact, and a fifth contact coupled to the N AlGaN layer, the third, fourth, and fifth contacts electrically isolated from each other and the fourth contact between the third and fifth contacts. Currently amended
The integrated circuit of claim 8, wherein the N-GaN layers have non-uniform doping profiles. Original
The integrated circuit of claim 8. further comprisin g: the varactor comprising a P GaN layer between the P + GaN layer and the N GaN N layer; and the HEMT comprising a P GaN layer between the P+ GaN layer and the N GaN layer; wherein the F GaN layer of the varactor and the [[HEMT]] P GaN layer of the HEMT are co-planar. Currently amended
The integrated circuit of claim 8, further comprising: the HEMT comprising [[a]] an N InGaN layer between the N AlGaN layer and the third, fourth, and fifth contacts; and the varactor comprising [[a]] a n N InGaN layer between the N AlGaN layer and the second contact; wherein the [[HEMT]] N InGaN layer of the HEMT and the N InGaN layer of the varactor are co-planar. Currently amended
A radio frequency (RF) module comprising: a single die comprising a substrate; a buffer layer on the substrate; a varactor on a first portion of the buffer layer, the varactor comprising: a first gallium nitride (GaN) layer doped with a P-type dopant (P+ GaN layer) on the first portion of the buffer layer; and a first stack of layers on the first P+ GaN layer, the first stack of layers comprising: a first varactor layer comprising a first material comprising a GaN compound, the first material doped to a first concentration of N- type dopant; and a second varactor layer comprising a second material comprising a GaN compound, the second material doped to a second concentration of the N-type dopant; a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first stack of layers; and a second contact coupled to the second varactor layer; and a high electron mobility transistor (HEMT) comprising: a second P+ GaN layer on a second portion of the buffer layer; and a second stack of layers on the second P+ GaN layer, the second stack of layers comprising: Page 6 of 15 a first HEMT layer comprising the first material doped to the first concentration of the N-type dopant; and a second HEMT layer comprising the second material doped to the second concentration of the N-type dopant; a third contact coupled to a first portion of the second HEMT layer; a fourth contact coupled to a second portion of the second HEMT layer; and a fifth contact coupled to a third portion of the second HEMT layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other, wherein: [[a]] the HEMT is configured to receive an RF signal and output an amplified RF signal; and [[a]] the varactor is configured to couple the amplified RF signal to a load,. Currently amended
The RF module of claim 12, wherein: + + + + [[a]] the first varactor layer comprises a GaN layer doped with the N-type dopant (N-GaN layer } +-+, and the first N-varactor layer i electrically isolated from the-first HEMT layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N-type dopant (N-AlGaN layer }, and the second varactor layer is electrically isolated from the second N- HEMT layer Page 7 of 15 +--. Currently amended
The RF module of claim 12, wherein: SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.3.svg 0.15 0.82 Black and white + the first varactor layer comprises a GaN layer doped with the N-type dopant (N GaN layer }, having a non-uniform doping profile, on a portion of the first P+ GaN layer; and the second varactor layer comprises an aluminum gallium nitride layer doped with the N- type dopant N- AlGaN layer } on the N- first varactor layer +--. Currently amended
The RF module of claim 12, wherein the RF signal is a 5G RF signal. Original
The RF module of claim 12, wherein the HEMT is included in an RF power amplifier. Original
A method of manufacturing a device with a varactor integrated with a high electron mobility transistor (HEMT }, the method comprising: forming a substrate; forming a buffer layer on the substrate; forming a first P+ GaN layer on a first portion of the buffer layer and forming a second P+ GaN layer on a second portion of the buffer layer, the first P+ GaN layer electrically isolated from the second P+ GaN layer; SVG 16511093.09-30-2020.KFPKDLTJDFLYX11.CLM.4.svg 0.15 0.82 Black and white forming a first N GaN layer on a portion of the first P+ GaN layer and forming a second N GaN layer on the second P+ GaN layer, the first N GaN layer electrically isolated from the second N GaN layer; forming a first N AlGaN layer on the first N GaN layer and forming a second N AlGaN layer on the second N GaN layer, the first N AlGaN layer electrically isolated from the second N AlGaN layer; and forming a first contact coupled to a portion of the first P+ GaN layer, the first contact electrically isolated from the first N GaN layer, forming a second contact coupled to the first N AlGaN layer, forming a third contact coupled to a first portion of the second N AlGaN layer, forming a fourth contact coupled to a second portion of the second N AlGaN layer, and forming a fifth contact coupled to a third portion of the second N AlGaN layer, the fourth contact located between the third and fifth contacts, the third, fourth, and fifth contacts electrically isolated from each other. Currently amended
The method of claim 21, wherein the first N GaN layer and the second N GaN layer have nonuniform doping profiles. Original
The method of claim 21, further comprising: forming a first P GaN layer between the first P+ GaN layer and the first N GaN layer; and forming a second P GaN layer between the second P+ GaN layer and the second N GaN layer. Original
The method of claim 21, further comprising: forming a second N InGaN layer between the second N AlGaN layer and the third, fourth, and fifth contacts; and forming a first N InGaN layer between the first N AlGaN layer and the second contact. Currently amended
A method of manufacturing a device with a varactor integrated with a high electron mobility transistor (HEMT j, the method comprising: forming a substrate; forming a buffer layer on the s u bstrate; forming a P+ GaN layer on the buffer layer; forming [[a]] an N " GaN layer, having a non-uniform doping profile, on a portion of the P+ GaN layer; forming an N-AI GaN layer on the N-GaN layer; and for min g a first contact coupled to a portion of the P+ GaN layer, the first contact electrically isolated from the N-GaN layer. forming a second contact coupled to a first portion of the N-AlGaN layer. for m ing a third contact coupled to a second portion of the N-AlGaN layer. and forming a fourth contact coupled to a third portion of the N-AlGaN layer. the fourth contact located between the second and third contacts, the second, third. and fourth contacts electrically isolated from each other. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
GaN P-N junction varactor integrated with HEMT (varactor portion)
GaN high electron mobility transistor (HEMT)
Materials described outside the worked examples.
P+ GaN
GaN
N- AlGaN
AlGaN
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