A switched-mode neutral forming device, comprising: one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source struc-tures that extend to an aluminum gallium nitride (Al-GaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flow-ing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage; an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.

The switched-mode neutral forming device of claim 10, wherein a second set of three of the nine bi-directional switches are respectively coupled between a second line terminal and a first terminal of the star winding, the second line terminal and a second terminal of the star winding, and the second line terminal and a third terminal of the star winding.

A switched-mode neutral forming device, comprising: one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source struc-tures that extend to an aluminum gallium nitride (Al-GaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flow-ing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage, wherein the plurality of switches are operable in one of a split-phase configuration or three-phase configuration; an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.

A switched-mode neutral forming device, comprising: one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source struc-tures that extend to an aluminum gallium nitride (Al-GaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flow-ing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage; an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.

The switched-mode neutral forming device of claim 10, wherein a second set of three of the nine bi-directional switches are respectively coupled between a second line terminal and a first terminal of the star winding, the second line terminal and a second terminal of the star winding, and the second line terminal and a third terminal of the star winding.

A switched-mode neutral forming device, comprising: one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source struc-tures that extend to an aluminum gallium nitride (Al-GaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flow-ing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage, wherein the plurality of switches are operable in one of a split-phase configuration or three-phase configuration; an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.

A switched-mode neutral forming device, comprising: one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source struc-tures that extend to an aluminum gallium nitride (Al-GaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flow-ing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage; an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.

The switched-mode neutral forming device of claim 10, wherein a second set of three of the nine bi-directional switches are respectively coupled between a second line terminal and a first terminal of the star winding, the second line terminal and a second terminal of the star winding, and the second line terminal and a third terminal of the star winding.

A switched-mode neutral forming device, comprising: one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source struc-tures that extend to an aluminum gallium nitride (Al-GaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flow-ing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage, wherein the plurality of switches are operable in one of a split-phase configuration or three-phase configuration; an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.

A switched-mode neutral forming device, comprising: one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source struc-tures that extend to an aluminum gallium nitride (Al-GaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flow-ing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage; an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.

The switched-mode neutral forming device of claim 10, wherein a second set of three of the nine bi-directional switches are respectively coupled between a second line terminal and a first terminal of the star winding, the second line terminal and a second terminal of the star winding, and the second line terminal and a third terminal of the star winding.

A switched-mode neutral forming device, comprising: one or more windings coupled to (i) a plurality of line terminals via a plurality of switches and (ii) a neutral terminal, wherein each switch of the plurality of switches is a native four quadrant bi-directional switch that is a gallium nitride (GaN) high mobility electron transistor (HEMT) comprising two gate-source struc-tures that extend to an aluminum gallium nitride (Al-GaN) layer, one of which used in place of a drain which allows a common drift region to be used for at least one of current flowing in a direction from a first source terminal to a second source terminal, for current flow-ing in a direction from the second source terminal to the first source terminal, or to block either a positive or a negative voltage, wherein the plurality of switches are operable in one of a split-phase configuration or three-phase configuration; an inert passivation layer that contacts and covers a top surface of the aluminum gallium nitride (AlGaN) layer and extends at least partially along a gallium nitride (GaN) layer; and a controller, coupled to the plurality of switches, for driving the switches at a frequency orders or magnitude about 1000 times greater than an AC mains frequency such that a switching frequency of the switched-mode neutral forming device is about 50 KHz to about 60 KHz.