Patent
US 12,408,402 B2GaN-BASED SEMICONDUCTOR STRUCTURES
Kai Cheng
ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)·Sep. 2, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 12,408,402 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 is a cross-sectional view taken along line A-A' in
FIG. 3 is a schematic view illustrating a semiconductor structure after a gate electrode, a source electrode, a drain 60 electrode, a source region N-type ion …
FIG. 4 is a cross-sectional view taken along line B-B' in
FIG. 5 is a schematic top view illustrating a GaN-based semiconductor structure in a comparative example after a B₂ gate electrode, a source electrode, a drain …
FIG. 6 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 7 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 8 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 9 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 10 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a …
FIG. 11 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a …
FIG. 12 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to an eighth embodiment of the present disclosure.
FIG. 13 is a schematic view illustrating a semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region N-type ion …
FIG. 14 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to a ninth embodiment of the present disclosure.
FIG. 15 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to a tenth embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor structure, comprising: a substrate; a channel layer; a barrier layer, wherein the channel layer and the barrier layer are sequentially stacked on the substrate from bottom to up, and the channel layer and the barrier layer each include a gate region, a source region and a drain region located on both sides of the gate region; a source region N-type ion heavily-doped layer located in the source region; a drain region N-type ion heavily-doped layer located in the drain region, wherein a part of at least one of the source region N-type ion heavily-doped layer or the drain region N-type ion heavily-doped layer extends into the barrier layer and a part of the channel layer in a thickness direction; a gate electrode located in the gate region of the barrier layer; a source electrode located on the source region N-type ion heavily-doped layer; and a drain electrode located on the drain region N-type ion heavily-doped layer; wherein the GaN-based semiconductor structure has one of following structures: the source region has one or more first holes, the drain region has a first groove, the first groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the first groove is filled with the drain region N-type ion heavily-doped layer; the drain region has one or more second holes, the source region has a second groove, the second groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the second groove is filled with the source region N-type ion heavily-doped layer; or one or more first holes are located in the source region, one or more second holes are located in the drain region, both the one or more first holes and the one or more second holes have cross sections, and the cross sections are surfaces parallel to a plane where the substrate is located; the one or more first holes and the one or more second holes have equal or unequal cross-sectional areas.
The GaN-based semiconductor structure according to claim 1, wherein at least one of the source region or the drain region has one or more holes, and the one or more holes extend into the barrier layer and the part of the channel layer in the thickness direction; one or more holes in the source region are filled with the source region N-type ion heavily-doped layer, and one or more holes in the drain region are filled with the drain region N-type ion heavily-doped layer.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, and one or more second holes are located in the drain region; in a unit cube with widths of the source region and the drain region being unit widths, a hole ratio of the one or more first holes is different from a hole ratio of the one or more second holes.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, one or more second holes are located in the drain region, and the one or more first holes and the one or more second holes have equal or unequal densities.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, one or more second holes are located in the drain region, and the one or more first holes and the one or more second holes have same or different shapes.
The GaN-based semiconductor structure according to claim 1, wherein at least one of the source region or the drain region has cracks, and the cracks extend into the barrier layer and the part of the channel layer in the thickness direction; the cracks are correspondingly filled with the source region N-type ion heavily-doped layer and the drain region N-type ion heavily-doped layer.
The GaN-based semiconductor structure according to claim 1, wherein the gate electrode and the barrier layer have one of following relationships: the gate electrode contacts the barrier layer; a P-type semiconductor layer is provided between the gate electrode and the barrier layer; or
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with N-type ion heavily-doped source/drain regions
Materials described outside the worked examples.
substrate
barrier layer (AlGaN)
AlGaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
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Patent
Atlas literature
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US 12,408,402 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 is a cross-sectional view taken along line A-A' in
FIG. 3 is a schematic view illustrating a semiconductor structure after a gate electrode, a source electrode, a drain 60 electrode, a source region N-type ion …
FIG. 4 is a cross-sectional view taken along line B-B' in
FIG. 5 is a schematic top view illustrating a GaN-based semiconductor structure in a comparative example after a B₂ gate electrode, a source electrode, a drain …
FIG. 6 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 7 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 8 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 9 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 10 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a …
FIG. 11 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a …
FIG. 12 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to an eighth embodiment of the present disclosure.
FIG. 13 is a schematic view illustrating a semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region N-type ion …
FIG. 14 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to a ninth embodiment of the present disclosure.
FIG. 15 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to a tenth embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor structure, comprising: a substrate; a channel layer; a barrier layer, wherein the channel layer and the barrier layer are sequentially stacked on the substrate from bottom to up, and the channel layer and the barrier layer each include a gate region, a source region and a drain region located on both sides of the gate region; a source region N-type ion heavily-doped layer located in the source region; a drain region N-type ion heavily-doped layer located in the drain region, wherein a part of at least one of the source region N-type ion heavily-doped layer or the drain region N-type ion heavily-doped layer extends into the barrier layer and a part of the channel layer in a thickness direction; a gate electrode located in the gate region of the barrier layer; a source electrode located on the source region N-type ion heavily-doped layer; and a drain electrode located on the drain region N-type ion heavily-doped layer; wherein the GaN-based semiconductor structure has one of following structures: the source region has one or more first holes, the drain region has a first groove, the first groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the first groove is filled with the drain region N-type ion heavily-doped layer; the drain region has one or more second holes, the source region has a second groove, the second groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the second groove is filled with the source region N-type ion heavily-doped layer; or one or more first holes are located in the source region, one or more second holes are located in the drain region, both the one or more first holes and the one or more second holes have cross sections, and the cross sections are surfaces parallel to a plane where the substrate is located; the one or more first holes and the one or more second holes have equal or unequal cross-sectional areas.
The GaN-based semiconductor structure according to claim 1, wherein at least one of the source region or the drain region has one or more holes, and the one or more holes extend into the barrier layer and the part of the channel layer in the thickness direction; one or more holes in the source region are filled with the source region N-type ion heavily-doped layer, and one or more holes in the drain region are filled with the drain region N-type ion heavily-doped layer.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, and one or more second holes are located in the drain region; in a unit cube with widths of the source region and the drain region being unit widths, a hole ratio of the one or more first holes is different from a hole ratio of the one or more second holes.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, one or more second holes are located in the drain region, and the one or more first holes and the one or more second holes have equal or unequal densities.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, one or more second holes are located in the drain region, and the one or more first holes and the one or more second holes have same or different shapes.
The GaN-based semiconductor structure according to claim 1, wherein at least one of the source region or the drain region has cracks, and the cracks extend into the barrier layer and the part of the channel layer in the thickness direction; the cracks are correspondingly filled with the source region N-type ion heavily-doped layer and the drain region N-type ion heavily-doped layer.
The GaN-based semiconductor structure according to claim 1, wherein the gate electrode and the barrier layer have one of following relationships: the gate electrode contacts the barrier layer; a P-type semiconductor layer is provided between the gate electrode and the barrier layer; or
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with N-type ion heavily-doped source/drain regions
Materials described outside the worked examples.
substrate
barrier layer (AlGaN)
AlGaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,408,402 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 is a cross-sectional view taken along line A-A' in
FIG. 3 is a schematic view illustrating a semiconductor structure after a gate electrode, a source electrode, a drain 60 electrode, a source region N-type ion …
FIG. 4 is a cross-sectional view taken along line B-B' in
FIG. 5 is a schematic top view illustrating a GaN-based semiconductor structure in a comparative example after a B₂ gate electrode, a source electrode, a drain …
FIG. 6 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 7 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 8 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 9 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 10 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a …
FIG. 11 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a …
FIG. 12 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to an eighth embodiment of the present disclosure.
FIG. 13 is a schematic view illustrating a semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region N-type ion …
FIG. 14 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to a ninth embodiment of the present disclosure.
FIG. 15 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to a tenth embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor structure, comprising: a substrate; a channel layer; a barrier layer, wherein the channel layer and the barrier layer are sequentially stacked on the substrate from bottom to up, and the channel layer and the barrier layer each include a gate region, a source region and a drain region located on both sides of the gate region; a source region N-type ion heavily-doped layer located in the source region; a drain region N-type ion heavily-doped layer located in the drain region, wherein a part of at least one of the source region N-type ion heavily-doped layer or the drain region N-type ion heavily-doped layer extends into the barrier layer and a part of the channel layer in a thickness direction; a gate electrode located in the gate region of the barrier layer; a source electrode located on the source region N-type ion heavily-doped layer; and a drain electrode located on the drain region N-type ion heavily-doped layer; wherein the GaN-based semiconductor structure has one of following structures: the source region has one or more first holes, the drain region has a first groove, the first groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the first groove is filled with the drain region N-type ion heavily-doped layer; the drain region has one or more second holes, the source region has a second groove, the second groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the second groove is filled with the source region N-type ion heavily-doped layer; or one or more first holes are located in the source region, one or more second holes are located in the drain region, both the one or more first holes and the one or more second holes have cross sections, and the cross sections are surfaces parallel to a plane where the substrate is located; the one or more first holes and the one or more second holes have equal or unequal cross-sectional areas.
The GaN-based semiconductor structure according to claim 1, wherein at least one of the source region or the drain region has one or more holes, and the one or more holes extend into the barrier layer and the part of the channel layer in the thickness direction; one or more holes in the source region are filled with the source region N-type ion heavily-doped layer, and one or more holes in the drain region are filled with the drain region N-type ion heavily-doped layer.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, and one or more second holes are located in the drain region; in a unit cube with widths of the source region and the drain region being unit widths, a hole ratio of the one or more first holes is different from a hole ratio of the one or more second holes.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, one or more second holes are located in the drain region, and the one or more first holes and the one or more second holes have equal or unequal densities.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, one or more second holes are located in the drain region, and the one or more first holes and the one or more second holes have same or different shapes.
The GaN-based semiconductor structure according to claim 1, wherein at least one of the source region or the drain region has cracks, and the cracks extend into the barrier layer and the part of the channel layer in the thickness direction; the cracks are correspondingly filled with the source region N-type ion heavily-doped layer and the drain region N-type ion heavily-doped layer.
The GaN-based semiconductor structure according to claim 1, wherein the gate electrode and the barrier layer have one of following relationships: the gate electrode contacts the barrier layer; a P-type semiconductor layer is provided between the gate electrode and the barrier layer; or
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with N-type ion heavily-doped source/drain regions
Materials described outside the worked examples.
substrate
barrier layer (AlGaN)
AlGaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,408,402 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 is a cross-sectional view taken along line A-A' in
FIG. 3 is a schematic view illustrating a semiconductor structure after a gate electrode, a source electrode, a drain 60 electrode, a source region N-type ion …
FIG. 4 is a cross-sectional view taken along line B-B' in
FIG. 5 is a schematic top view illustrating a GaN-based semiconductor structure in a comparative example after a B₂ gate electrode, a source electrode, a drain …
FIG. 6 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 7 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 8 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 9 is a schematic top view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region …
FIG. 10 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a …
FIG. 11 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure after a gate electrode, a source electrode, a drain electrode, a …
FIG. 12 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to an eighth embodiment of the present disclosure.
FIG. 13 is a schematic view illustrating a semiconductor structure after a gate electrode, a source electrode, a drain electrode, a source region N-type ion …
FIG. 14 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to a ninth embodiment of the present disclosure.
FIG. 15 is a schematic cross-sectional view illustrating a GaN-based semiconductor structure according to a tenth embodiment of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor structure, comprising: a substrate; a channel layer; a barrier layer, wherein the channel layer and the barrier layer are sequentially stacked on the substrate from bottom to up, and the channel layer and the barrier layer each include a gate region, a source region and a drain region located on both sides of the gate region; a source region N-type ion heavily-doped layer located in the source region; a drain region N-type ion heavily-doped layer located in the drain region, wherein a part of at least one of the source region N-type ion heavily-doped layer or the drain region N-type ion heavily-doped layer extends into the barrier layer and a part of the channel layer in a thickness direction; a gate electrode located in the gate region of the barrier layer; a source electrode located on the source region N-type ion heavily-doped layer; and a drain electrode located on the drain region N-type ion heavily-doped layer; wherein the GaN-based semiconductor structure has one of following structures: the source region has one or more first holes, the drain region has a first groove, the first groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the first groove is filled with the drain region N-type ion heavily-doped layer; the drain region has one or more second holes, the source region has a second groove, the second groove extends into the barrier layer and the part of the channel layer in the thickness direction, and the second groove is filled with the source region N-type ion heavily-doped layer; or one or more first holes are located in the source region, one or more second holes are located in the drain region, both the one or more first holes and the one or more second holes have cross sections, and the cross sections are surfaces parallel to a plane where the substrate is located; the one or more first holes and the one or more second holes have equal or unequal cross-sectional areas.
The GaN-based semiconductor structure according to claim 1, wherein at least one of the source region or the drain region has one or more holes, and the one or more holes extend into the barrier layer and the part of the channel layer in the thickness direction; one or more holes in the source region are filled with the source region N-type ion heavily-doped layer, and one or more holes in the drain region are filled with the drain region N-type ion heavily-doped layer.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, and one or more second holes are located in the drain region; in a unit cube with widths of the source region and the drain region being unit widths, a hole ratio of the one or more first holes is different from a hole ratio of the one or more second holes.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, one or more second holes are located in the drain region, and the one or more first holes and the one or more second holes have equal or unequal densities.
The GaN-based semiconductor structure according to claim 1, wherein one or more first holes are located in the source region, one or more second holes are located in the drain region, and the one or more first holes and the one or more second holes have same or different shapes.
The GaN-based semiconductor structure according to claim 1, wherein at least one of the source region or the drain region has cracks, and the cracks extend into the barrier layer and the part of the channel layer in the thickness direction; the cracks are correspondingly filled with the source region N-type ion heavily-doped layer and the drain region N-type ion heavily-doped layer.
The GaN-based semiconductor structure according to claim 1, wherein the gate electrode and the barrier layer have one of following relationships: the gate electrode contacts the barrier layer; a P-type semiconductor layer is provided between the gate electrode and the barrier layer; or
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based HEMT with N-type ion heavily-doped source/drain regions
Materials described outside the worked examples.
substrate
barrier layer (AlGaN)
AlGaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 1
Related documents with shared materials, methods, properties, or citations.
channel layer (GaN)
GaN
source region N-type ion heavily-doped layer
drain region N-type ion heavily-doped layer
gate electrode metal
channel layer (GaN)
GaN
source region N-type ion heavily-doped layer
drain region N-type ion heavily-doped layer
gate electrode metal
channel layer (GaN)
GaN
source region N-type ion heavily-doped layer
drain region N-type ion heavily-doped layer
gate electrode metal
channel layer (GaN)
GaN
source region N-type ion heavily-doped layer
drain region N-type ion heavily-doped layer
gate electrode metal