Patent
US 11,313,038FABRICAT I NG METHOD OF SEMI-POLAR GALLIUM NITRIDE
Wen-Chung Li
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,313,038Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a substrate 10 and a silic o n substrate 12 are provided. The silic on substrate 12 preferably includes (1,0,0) f acets. T h e substrate 10 is …
FIG. 2, a b o nding pro cess is perfo rmed to b o nd the f irst o xide layer 14a to the second o xide layer 14b. The f irst o xide layer 14a and the second o …
FIG. 3 is a fabricating stage fo llowing F IG. 2; [0010]
FIG. 4. As shown in
FIG. 5, the SOI substrate 16 is removed from the heating plate 18. Later, an e pitaxial process is performed to grow a semi-polar galliu m nitride layer 28 o n …
FIG. 6. Du ring the epitaxial process, the gallium nitride grows along a direction A which is a direction of c -plane of a hexagonal crystal system to form a …
FIG. 7, after the vapor etching process, (1,1,1) facets and the oxide layer 14c can form numerous trapezoid-shaped trenches 26 by adjusting concentration of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a semi-polar gallium nitride layer, comprising: providing a silicon-on-insulator (SO I) substrate, wherein the SOI substrate comprises a substrate, a silicon oxide layer and a silicon substrate, the silicon substrate has (1,0,0) facets, and the silicon oxide layer is disposed between the substrate and the silicon substrate; performing a vapor etching process to etch (1,0,0) facets into (1,1,1) facets, wherein the vapor etching process comprises: disposing the SOI substrate on a heating plate, and the substrate contacting the heating plate; providing a nebulizer under the heating plate, and a top surface of the silicon substrate facing the nebulizer; and utilizing the nebulizer to turn an etchant within the nebulizer into mist and etching (1,0,0) facets into (1,1,1) facets by the mist; and performing an epitaxial process to grow the semi-polar gallium nitride layer on (1,1,1) facets.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the heating plate heats the silicon substrate to keep a temperature of the silicon substrate between 40 and 120 'C.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the etchant comprises potassium hydroxide (KOH) aqueous solution, tetramethyl ammonium hydroxide (TMA H) aqueous solution, sodium hydroxide (Na O H) aqueous solution or ethylenediamine pyrocatechol (EDP) aqueous solution.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein a concentration of the etchant is between 30 and 60wt %.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein facets of the semi-polar gallium nitride layer comprises (1,1,-2,3) facets, (1,1,-2,2) facets, (1,1,-2,1) facets, (1,0,-1,2)facets, (1,0,-1,1) facets or (2,0,-2,1) facets of a hexagonal crystal system.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the epitaxial process, a polar gallium nitride layer grows in a direction perpendicular to (1,1,1) facets, then the semi-polar gallium nitride layer grows along a direction of (1,1,-2,3) facets, (1,1,-2,2) facets, (1,1,-2,1) facets, (1, 0,-1,2)facets, (1, 0,-1,1) facets or (2, 0,-2,1) facets of a hexagonal crystal system.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein after the vapor etching process, the silicon substrate comprises a plurality of V-shaped trenches, the (1,1,1) facets are sidewalls of each of the plurality of V-shaped trenches.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, the silicon oxide layer serves as an etching stop layer.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, the etchant is in a room temperature.
The method of fabricating the semi-polar gallium nitride layer of claim 1, further comprising encapsulating the substrate by a first silicon oxide layer and covering two sidewalls and a bottom of the silicon substrate by a second silicon oxide layer.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, a distance between the top surface of the silicon substrate and a nozzle of the nebulizer is between 3 and 30 centimeters.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the nebulizer comprises a pneumatic jet nebulizer, an ultrasonic nebulizer or a mesh nebulizer.
Layer stacks claimed or described, ordered top of device to substrate.
silicon-on-insulator (SOI) substrate with semi-polar GaN
Materials described outside the worked examples.
semi-polar gallium nitride
GaN
silicon substrate with (1,0,0) facets
Si
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 40–120 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHODS FOR PREPARING ALN BASED TEMPLATE HAVING SI SUBSTRATE AND GAN BASED EPITAXIAL STRUCTURE HAVING SI SUBSTRATE
METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR SUBSTRATE STRUCTURE WITH DEVICE AREAS FOR DEFINITION OF GAN-BASED DEVICES AND CMOS DEVICES
Patent
Atlas literature
Patent
US 11,313,038Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a substrate 10 and a silic o n substrate 12 are provided. The silic on substrate 12 preferably includes (1,0,0) f acets. T h e substrate 10 is …
FIG. 2, a b o nding pro cess is perfo rmed to b o nd the f irst o xide layer 14a to the second o xide layer 14b. The f irst o xide layer 14a and the second o …
FIG. 3 is a fabricating stage fo llowing F IG. 2; [0010]
FIG. 4. As shown in
FIG. 5, the SOI substrate 16 is removed from the heating plate 18. Later, an e pitaxial process is performed to grow a semi-polar galliu m nitride layer 28 o n …
FIG. 6. Du ring the epitaxial process, the gallium nitride grows along a direction A which is a direction of c -plane of a hexagonal crystal system to form a …
FIG. 7, after the vapor etching process, (1,1,1) facets and the oxide layer 14c can form numerous trapezoid-shaped trenches 26 by adjusting concentration of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a semi-polar gallium nitride layer, comprising: providing a silicon-on-insulator (SO I) substrate, wherein the SOI substrate comprises a substrate, a silicon oxide layer and a silicon substrate, the silicon substrate has (1,0,0) facets, and the silicon oxide layer is disposed between the substrate and the silicon substrate; performing a vapor etching process to etch (1,0,0) facets into (1,1,1) facets, wherein the vapor etching process comprises: disposing the SOI substrate on a heating plate, and the substrate contacting the heating plate; providing a nebulizer under the heating plate, and a top surface of the silicon substrate facing the nebulizer; and utilizing the nebulizer to turn an etchant within the nebulizer into mist and etching (1,0,0) facets into (1,1,1) facets by the mist; and performing an epitaxial process to grow the semi-polar gallium nitride layer on (1,1,1) facets.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the heating plate heats the silicon substrate to keep a temperature of the silicon substrate between 40 and 120 'C.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the etchant comprises potassium hydroxide (KOH) aqueous solution, tetramethyl ammonium hydroxide (TMA H) aqueous solution, sodium hydroxide (Na O H) aqueous solution or ethylenediamine pyrocatechol (EDP) aqueous solution.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein a concentration of the etchant is between 30 and 60wt %.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein facets of the semi-polar gallium nitride layer comprises (1,1,-2,3) facets, (1,1,-2,2) facets, (1,1,-2,1) facets, (1,0,-1,2)facets, (1,0,-1,1) facets or (2,0,-2,1) facets of a hexagonal crystal system.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the epitaxial process, a polar gallium nitride layer grows in a direction perpendicular to (1,1,1) facets, then the semi-polar gallium nitride layer grows along a direction of (1,1,-2,3) facets, (1,1,-2,2) facets, (1,1,-2,1) facets, (1, 0,-1,2)facets, (1, 0,-1,1) facets or (2, 0,-2,1) facets of a hexagonal crystal system.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein after the vapor etching process, the silicon substrate comprises a plurality of V-shaped trenches, the (1,1,1) facets are sidewalls of each of the plurality of V-shaped trenches.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, the silicon oxide layer serves as an etching stop layer.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, the etchant is in a room temperature.
The method of fabricating the semi-polar gallium nitride layer of claim 1, further comprising encapsulating the substrate by a first silicon oxide layer and covering two sidewalls and a bottom of the silicon substrate by a second silicon oxide layer.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, a distance between the top surface of the silicon substrate and a nozzle of the nebulizer is between 3 and 30 centimeters.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the nebulizer comprises a pneumatic jet nebulizer, an ultrasonic nebulizer or a mesh nebulizer.
Layer stacks claimed or described, ordered top of device to substrate.
silicon-on-insulator (SOI) substrate with semi-polar GaN
Materials described outside the worked examples.
semi-polar gallium nitride
GaN
silicon substrate with (1,0,0) facets
Si
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 40–120 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHODS FOR PREPARING ALN BASED TEMPLATE HAVING SI SUBSTRATE AND GAN BASED EPITAXIAL STRUCTURE HAVING SI SUBSTRATE
METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR SUBSTRATE STRUCTURE WITH DEVICE AREAS FOR DEFINITION OF GAN-BASED DEVICES AND CMOS DEVICES
Patent
Atlas literature
Patent
US 11,313,038Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a substrate 10 and a silic o n substrate 12 are provided. The silic on substrate 12 preferably includes (1,0,0) f acets. T h e substrate 10 is …
FIG. 2, a b o nding pro cess is perfo rmed to b o nd the f irst o xide layer 14a to the second o xide layer 14b. The f irst o xide layer 14a and the second o …
FIG. 3 is a fabricating stage fo llowing F IG. 2; [0010]
FIG. 4. As shown in
FIG. 5, the SOI substrate 16 is removed from the heating plate 18. Later, an e pitaxial process is performed to grow a semi-polar galliu m nitride layer 28 o n …
FIG. 6. Du ring the epitaxial process, the gallium nitride grows along a direction A which is a direction of c -plane of a hexagonal crystal system to form a …
FIG. 7, after the vapor etching process, (1,1,1) facets and the oxide layer 14c can form numerous trapezoid-shaped trenches 26 by adjusting concentration of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a semi-polar gallium nitride layer, comprising: providing a silicon-on-insulator (SO I) substrate, wherein the SOI substrate comprises a substrate, a silicon oxide layer and a silicon substrate, the silicon substrate has (1,0,0) facets, and the silicon oxide layer is disposed between the substrate and the silicon substrate; performing a vapor etching process to etch (1,0,0) facets into (1,1,1) facets, wherein the vapor etching process comprises: disposing the SOI substrate on a heating plate, and the substrate contacting the heating plate; providing a nebulizer under the heating plate, and a top surface of the silicon substrate facing the nebulizer; and utilizing the nebulizer to turn an etchant within the nebulizer into mist and etching (1,0,0) facets into (1,1,1) facets by the mist; and performing an epitaxial process to grow the semi-polar gallium nitride layer on (1,1,1) facets.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the heating plate heats the silicon substrate to keep a temperature of the silicon substrate between 40 and 120 'C.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the etchant comprises potassium hydroxide (KOH) aqueous solution, tetramethyl ammonium hydroxide (TMA H) aqueous solution, sodium hydroxide (Na O H) aqueous solution or ethylenediamine pyrocatechol (EDP) aqueous solution.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein a concentration of the etchant is between 30 and 60wt %.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein facets of the semi-polar gallium nitride layer comprises (1,1,-2,3) facets, (1,1,-2,2) facets, (1,1,-2,1) facets, (1,0,-1,2)facets, (1,0,-1,1) facets or (2,0,-2,1) facets of a hexagonal crystal system.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the epitaxial process, a polar gallium nitride layer grows in a direction perpendicular to (1,1,1) facets, then the semi-polar gallium nitride layer grows along a direction of (1,1,-2,3) facets, (1,1,-2,2) facets, (1,1,-2,1) facets, (1, 0,-1,2)facets, (1, 0,-1,1) facets or (2, 0,-2,1) facets of a hexagonal crystal system.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein after the vapor etching process, the silicon substrate comprises a plurality of V-shaped trenches, the (1,1,1) facets are sidewalls of each of the plurality of V-shaped trenches.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, the silicon oxide layer serves as an etching stop layer.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, the etchant is in a room temperature.
The method of fabricating the semi-polar gallium nitride layer of claim 1, further comprising encapsulating the substrate by a first silicon oxide layer and covering two sidewalls and a bottom of the silicon substrate by a second silicon oxide layer.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, a distance between the top surface of the silicon substrate and a nozzle of the nebulizer is between 3 and 30 centimeters.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the nebulizer comprises a pneumatic jet nebulizer, an ultrasonic nebulizer or a mesh nebulizer.
Layer stacks claimed or described, ordered top of device to substrate.
silicon-on-insulator (SOI) substrate with semi-polar GaN
Materials described outside the worked examples.
semi-polar gallium nitride
GaN
silicon substrate with (1,0,0) facets
Si
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 40–120 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHODS FOR PREPARING ALN BASED TEMPLATE HAVING SI SUBSTRATE AND GAN BASED EPITAXIAL STRUCTURE HAVING SI SUBSTRATE
METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR SUBSTRATE STRUCTURE WITH DEVICE AREAS FOR DEFINITION OF GAN-BASED DEVICES AND CMOS DEVICES
Patent
Atlas literature
Patent
US 11,313,038Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, a substrate 10 and a silic o n substrate 12 are provided. The silic on substrate 12 preferably includes (1,0,0) f acets. T h e substrate 10 is …
FIG. 2, a b o nding pro cess is perfo rmed to b o nd the f irst o xide layer 14a to the second o xide layer 14b. The f irst o xide layer 14a and the second o …
FIG. 3 is a fabricating stage fo llowing F IG. 2; [0010]
FIG. 4. As shown in
FIG. 5, the SOI substrate 16 is removed from the heating plate 18. Later, an e pitaxial process is performed to grow a semi-polar galliu m nitride layer 28 o n …
FIG. 6. Du ring the epitaxial process, the gallium nitride grows along a direction A which is a direction of c -plane of a hexagonal crystal system to form a …
FIG. 7, after the vapor etching process, (1,1,1) facets and the oxide layer 14c can form numerous trapezoid-shaped trenches 26 by adjusting concentration of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a semi-polar gallium nitride layer, comprising: providing a silicon-on-insulator (SO I) substrate, wherein the SOI substrate comprises a substrate, a silicon oxide layer and a silicon substrate, the silicon substrate has (1,0,0) facets, and the silicon oxide layer is disposed between the substrate and the silicon substrate; performing a vapor etching process to etch (1,0,0) facets into (1,1,1) facets, wherein the vapor etching process comprises: disposing the SOI substrate on a heating plate, and the substrate contacting the heating plate; providing a nebulizer under the heating plate, and a top surface of the silicon substrate facing the nebulizer; and utilizing the nebulizer to turn an etchant within the nebulizer into mist and etching (1,0,0) facets into (1,1,1) facets by the mist; and performing an epitaxial process to grow the semi-polar gallium nitride layer on (1,1,1) facets.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the heating plate heats the silicon substrate to keep a temperature of the silicon substrate between 40 and 120 'C.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the etchant comprises potassium hydroxide (KOH) aqueous solution, tetramethyl ammonium hydroxide (TMA H) aqueous solution, sodium hydroxide (Na O H) aqueous solution or ethylenediamine pyrocatechol (EDP) aqueous solution.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein a concentration of the etchant is between 30 and 60wt %.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein facets of the semi-polar gallium nitride layer comprises (1,1,-2,3) facets, (1,1,-2,2) facets, (1,1,-2,1) facets, (1,0,-1,2)facets, (1,0,-1,1) facets or (2,0,-2,1) facets of a hexagonal crystal system.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the epitaxial process, a polar gallium nitride layer grows in a direction perpendicular to (1,1,1) facets, then the semi-polar gallium nitride layer grows along a direction of (1,1,-2,3) facets, (1,1,-2,2) facets, (1,1,-2,1) facets, (1, 0,-1,2)facets, (1, 0,-1,1) facets or (2, 0,-2,1) facets of a hexagonal crystal system.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein after the vapor etching process, the silicon substrate comprises a plurality of V-shaped trenches, the (1,1,1) facets are sidewalls of each of the plurality of V-shaped trenches.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, the silicon oxide layer serves as an etching stop layer.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, the etchant is in a room temperature.
The method of fabricating the semi-polar gallium nitride layer of claim 1, further comprising encapsulating the substrate by a first silicon oxide layer and covering two sidewalls and a bottom of the silicon substrate by a second silicon oxide layer.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein during the vapor etching process, a distance between the top surface of the silicon substrate and a nozzle of the nebulizer is between 3 and 30 centimeters.
The method of fabricating the semi-polar gallium nitride layer of claim 1, wherein the nebulizer comprises a pneumatic jet nebulizer, an ultrasonic nebulizer or a mesh nebulizer.
Layer stacks claimed or described, ordered top of device to substrate.
silicon-on-insulator (SOI) substrate with semi-polar GaN
Materials described outside the worked examples.
semi-polar gallium nitride
GaN
silicon substrate with (1,0,0) facets
Si
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 40–120 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
METHODS FOR PREPARING ALN BASED TEMPLATE HAVING SI SUBSTRATE AND GAN BASED EPITAXIAL STRUCTURE HAVING SI SUBSTRATE
METHOD OF MANUFACTURING AN INTEGRATED SEMICONDUCTOR SUBSTRATE STRUCTURE WITH DEVICE AREAS FOR DEFINITION OF GAN-BASED DEVICES AND CMOS DEVICES
silicon oxide layer
SiO₂
substrate
potassium hydroxide aqueous solution
KOH
tetramethyl ammonium hydroxide aqueous solution
TMAH
sodium hydroxide aqueous solution
NaOH
ethylenediamine pyrocatechol aqueous solution
EDP
| — |
silicon oxide layer
SiO₂
substrate
potassium hydroxide aqueous solution
KOH
tetramethyl ammonium hydroxide aqueous solution
TMAH
sodium hydroxide aqueous solution
NaOH
ethylenediamine pyrocatechol aqueous solution
EDP
| — |
silicon oxide layer
SiO₂
substrate
potassium hydroxide aqueous solution
KOH
tetramethyl ammonium hydroxide aqueous solution
TMAH
sodium hydroxide aqueous solution
NaOH
ethylenediamine pyrocatechol aqueous solution
EDP
| — |
silicon oxide layer
SiO₂
substrate
potassium hydroxide aqueous solution
KOH
tetramethyl ammonium hydroxide aqueous solution
TMAH
sodium hydroxide aqueous solution
NaOH
ethylenediamine pyrocatechol aqueous solution
EDP
| — |