Patent
US 9,691,610Method for Producing a Group III Nitride Semiconductor Crystal and Method for Producing a GaN Substrate
Shohei Kumegawa
US
Copyright © 2026 Matter42. All rights reserved.
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US 9,691,610Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sketch (part 1) for describing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 2 is a sketch (part 2) for describing the Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 3 is a plan view for describing a seed crystal used in a method for producing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 4 is an A-A cross section view of
FIG. 5 shows the structure of a semiconductor crystal production apparatus used in a method for producing a Group 10 III nitride semiconductor crystal …
FIG. 6 is a sketch for describing the method for producing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 7 is a sketch (part 1) for describing a method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 8 is a sketch (part 2) for describing the method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 9 is a sketch for describing a seed crystal used in the method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 10 B which is a plan view for describing a Group III nitride semiconductor crystal according to Embodiment 3; FIG. lO B is a sketch for describing a seed …
FIG. 11 is a SEM image showing a cross section of non- crystal portion of GaN crystal produced in Example; and
FIG. 12 is a SEM image showing pits of GaN crystal produced in Example.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a Group III nitride semiconductor crystal, the method comprising: forming a mask layer on an underlayer, to thereby form an exposed portion of the underlayer which is not covered with the mask layer, and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, and each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions; growing a Group III nitride semiconductor crystal in a molten mixture containing at least Group III metal and Na; and wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.
The method for producing a Group III nitride semiconductor crystal according to claim 1, the method further comprising: forming a first mask layer on the underlayer; growing a first Group III nitride semiconductor crystal on the first mask layer in the molten mixture; forming a second mask layer on the first Group III nitride semiconductor crystal; and growing a second Group III nitride semiconductor crystal on the second mask layer in the molten mixture.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer is formed through atomic layer deposition.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer comprises A₁ 2 0 3.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer comprises at least one of ZrO 2 and TiO 2.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.
canceled
canceled
A method for producing a Group III nitride semiconductor substrate, the method comprising: forming a mask layer on an underlayer, and forming a seed crystal having an exposed portion of the underlayer which is not covered with the mask layer and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, and each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions; growing a Group III nitride semiconductor crystal in a molten mixture containing at least Ga and Na; separating the Group III nitride semiconductor crystal from the seed crystal; and wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.
The method for producing a Group III nitride semiconductor substrate according to claim 14, wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.
The method for producing a Group III nitride semiconductor substrate according to claim 14, wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.
canceled
canceled
Materials described outside the worked examples.
Group III nitride semiconductor crystal
mask layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 is a SEM image showing a cross section of non- crystal portion of GaN crystal produced in Example; and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Duration | 20–200 hours |
Table 1
Notably, the amounts of the elements shown in Table 1 are merely examples, and other amounts may be employed.
p. 10
Table 2
The growth time is 20 to 200 hours as shown in Table 2.
p. 10
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US 9,691,610Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sketch (part 1) for describing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 2 is a sketch (part 2) for describing the Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 3 is a plan view for describing a seed crystal used in a method for producing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 4 is an A-A cross section view of
FIG. 5 shows the structure of a semiconductor crystal production apparatus used in a method for producing a Group 10 III nitride semiconductor crystal …
FIG. 6 is a sketch for describing the method for producing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 7 is a sketch (part 1) for describing a method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 8 is a sketch (part 2) for describing the method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 9 is a sketch for describing a seed crystal used in the method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 10 B which is a plan view for describing a Group III nitride semiconductor crystal according to Embodiment 3; FIG. lO B is a sketch for describing a seed …
FIG. 11 is a SEM image showing a cross section of non- crystal portion of GaN crystal produced in Example; and
FIG. 12 is a SEM image showing pits of GaN crystal produced in Example.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a Group III nitride semiconductor crystal, the method comprising: forming a mask layer on an underlayer, to thereby form an exposed portion of the underlayer which is not covered with the mask layer, and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, and each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions; growing a Group III nitride semiconductor crystal in a molten mixture containing at least Group III metal and Na; and wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.
The method for producing a Group III nitride semiconductor crystal according to claim 1, the method further comprising: forming a first mask layer on the underlayer; growing a first Group III nitride semiconductor crystal on the first mask layer in the molten mixture; forming a second mask layer on the first Group III nitride semiconductor crystal; and growing a second Group III nitride semiconductor crystal on the second mask layer in the molten mixture.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer is formed through atomic layer deposition.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer comprises A₁ 2 0 3.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer comprises at least one of ZrO 2 and TiO 2.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.
canceled
canceled
A method for producing a Group III nitride semiconductor substrate, the method comprising: forming a mask layer on an underlayer, and forming a seed crystal having an exposed portion of the underlayer which is not covered with the mask layer and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, and each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions; growing a Group III nitride semiconductor crystal in a molten mixture containing at least Ga and Na; separating the Group III nitride semiconductor crystal from the seed crystal; and wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.
The method for producing a Group III nitride semiconductor substrate according to claim 14, wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.
The method for producing a Group III nitride semiconductor substrate according to claim 14, wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.
canceled
canceled
Materials described outside the worked examples.
Group III nitride semiconductor crystal
mask layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 is a SEM image showing a cross section of non- crystal portion of GaN crystal produced in Example; and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Duration | 20–200 hours |
Table 1
Notably, the amounts of the elements shown in Table 1 are merely examples, and other amounts may be employed.
p. 10
Table 2
The growth time is 20 to 200 hours as shown in Table 2.
p. 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,691,610Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sketch (part 1) for describing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 2 is a sketch (part 2) for describing the Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 3 is a plan view for describing a seed crystal used in a method for producing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 4 is an A-A cross section view of
FIG. 5 shows the structure of a semiconductor crystal production apparatus used in a method for producing a Group 10 III nitride semiconductor crystal …
FIG. 6 is a sketch for describing the method for producing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 7 is a sketch (part 1) for describing a method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 8 is a sketch (part 2) for describing the method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 9 is a sketch for describing a seed crystal used in the method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 10 B which is a plan view for describing a Group III nitride semiconductor crystal according to Embodiment 3; FIG. lO B is a sketch for describing a seed …
FIG. 11 is a SEM image showing a cross section of non- crystal portion of GaN crystal produced in Example; and
FIG. 12 is a SEM image showing pits of GaN crystal produced in Example.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a Group III nitride semiconductor crystal, the method comprising: forming a mask layer on an underlayer, to thereby form an exposed portion of the underlayer which is not covered with the mask layer, and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, and each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions; growing a Group III nitride semiconductor crystal in a molten mixture containing at least Group III metal and Na; and wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.
The method for producing a Group III nitride semiconductor crystal according to claim 1, the method further comprising: forming a first mask layer on the underlayer; growing a first Group III nitride semiconductor crystal on the first mask layer in the molten mixture; forming a second mask layer on the first Group III nitride semiconductor crystal; and growing a second Group III nitride semiconductor crystal on the second mask layer in the molten mixture.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer is formed through atomic layer deposition.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer comprises A₁ 2 0 3.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer comprises at least one of ZrO 2 and TiO 2.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.
canceled
canceled
A method for producing a Group III nitride semiconductor substrate, the method comprising: forming a mask layer on an underlayer, and forming a seed crystal having an exposed portion of the underlayer which is not covered with the mask layer and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, and each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions; growing a Group III nitride semiconductor crystal in a molten mixture containing at least Ga and Na; separating the Group III nitride semiconductor crystal from the seed crystal; and wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.
The method for producing a Group III nitride semiconductor substrate according to claim 14, wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.
The method for producing a Group III nitride semiconductor substrate according to claim 14, wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.
canceled
canceled
Materials described outside the worked examples.
Group III nitride semiconductor crystal
mask layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 is a SEM image showing a cross section of non- crystal portion of GaN crystal produced in Example; and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Duration | 20–200 hours |
Table 1
Notably, the amounts of the elements shown in Table 1 are merely examples, and other amounts may be employed.
p. 10
Table 2
The growth time is 20 to 200 hours as shown in Table 2.
p. 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,691,610Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sketch (part 1) for describing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 2 is a sketch (part 2) for describing the Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 3 is a plan view for describing a seed crystal used in a method for producing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 4 is an A-A cross section view of
FIG. 5 shows the structure of a semiconductor crystal production apparatus used in a method for producing a Group 10 III nitride semiconductor crystal …
FIG. 6 is a sketch for describing the method for producing a Group III nitride semiconductor crystal according to Embodiment 1;
FIG. 7 is a sketch (part 1) for describing a method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 8 is a sketch (part 2) for describing the method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 9 is a sketch for describing a seed crystal used in the method for producing a Group III nitride semiconductor crystal according to Embodiment 2;
FIG. 10 B which is a plan view for describing a Group III nitride semiconductor crystal according to Embodiment 3; FIG. lO B is a sketch for describing a seed …
FIG. 11 is a SEM image showing a cross section of non- crystal portion of GaN crystal produced in Example; and
FIG. 12 is a SEM image showing pits of GaN crystal produced in Example.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a Group III nitride semiconductor crystal, the method comprising: forming a mask layer on an underlayer, to thereby form an exposed portion of the underlayer which is not covered with the mask layer, and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, and each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions; growing a Group III nitride semiconductor crystal in a molten mixture containing at least Group III metal and Na; and wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.
The method for producing a Group III nitride semiconductor crystal according to claim 1, the method further comprising: forming a first mask layer on the underlayer; growing a first Group III nitride semiconductor crystal on the first mask layer in the molten mixture; forming a second mask layer on the first Group III nitride semiconductor crystal; and growing a second Group III nitride semiconductor crystal on the second mask layer in the molten mixture.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer is formed through atomic layer deposition.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer comprises A₁ 2 0 3.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein the mask layer comprises at least one of ZrO 2 and TiO 2.
The method for producing a Group III nitride semiconductor crystal according to claim 1, wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.
canceled
canceled
A method for producing a Group III nitride semiconductor substrate, the method comprising: forming a mask layer on an underlayer, and forming a seed crystal having an exposed portion of the underlayer which is not covered with the mask layer and an unexposed portion of the underlayer which is covered with the mask layer, wherein as the exposed portion, a plurality of growth starting regions discretely are disposed, connecting portions each having a linear pattern and each of which connects a nearest two of the plurality of growth starting regions are formed, and each area of the growth starting regions is larger than each area of the connecting portions, and a width of each area of the growth starting regions is larger than a width of each of the connecting portions; growing a Group III nitride semiconductor crystal in a molten mixture containing at least Ga and Na; separating the Group III nitride semiconductor crystal from the seed crystal; and wherein, the growing of the Group III nitride semiconductor crystal comprises growing the Group III nitride semiconductor crystal in a vertical direction from surfaces of the growth starting regions, in lateral direction over the mask and in lateral direction over surfaces of the connecting portions for promoting a lateral growth over the mask and guiding the lateral growth along the connecting portions.
The method for producing a Group III nitride semiconductor substrate according to claim 14, wherein the growth starting regions are disposed at vertices of a triangle, and the connecting portions are disposed at positions corresponding to sides of the triangle.
The method for producing a Group III nitride semiconductor substrate according to claim 14, wherein, in the growing of the Group III nitride semiconductor crystal, non-crystal portions containing the components of the molten mixture are formed on the mask layer.
canceled
canceled
Materials described outside the worked examples.
Group III nitride semiconductor crystal
mask layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 11 is a SEM image showing a cross section of non- crystal portion of GaN crystal produced in Example; and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Duration | 20–200 hours |
Table 1
Notably, the amounts of the elements shown in Table 1 are merely examples, and other amounts may be employed.
p. 10
Table 2
The growth time is 20 to 200 hours as shown in Table 2.
p. 10
Related documents with shared materials, methods, properties, or citations.
molten mixture of Group III metal and Na
Al₂O₃
ZrO₂
TiO₂
GaN crystal
GaN
molten mixture of Ga and Na
AlN underlayer
AlN
FIG. 12 is a SEM image showing pits of GaN crystal produced in Example.
| — |
molten mixture of Group III metal and Na
Al₂O₃
ZrO₂
TiO₂
GaN crystal
GaN
molten mixture of Ga and Na
AlN underlayer
AlN
FIG. 12 is a SEM image showing pits of GaN crystal produced in Example.
| — |
molten mixture of Group III metal and Na
Al₂O₃
ZrO₂
TiO₂
GaN crystal
GaN
molten mixture of Ga and Na
AlN underlayer
AlN
FIG. 12 is a SEM image showing pits of GaN crystal produced in Example.
| — |
molten mixture of Group III metal and Na
Al₂O₃
ZrO₂
TiO₂
GaN crystal
GaN
molten mixture of Ga and Na
AlN underlayer
AlN
FIG. 12 is a SEM image showing pits of GaN crystal produced in Example.
| — |