Patent
US 9,773,704METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES
Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, Shuji Nakamura
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,773,704Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 (a) and 1 (b) are a pair of scanning electron microscope (SEM) images 30 showing epitaxial device layers after removal from a bulk GaN substrate, …
FIGS. 2 (a), 2 (b), 2 (c) and 2 (d) together illustrate an exemplary process flow for substrate removal using PEC etching.
FIG. 3 illustrates a method of fabricating a device.
FIG. 4 (c) shows the near-field pattern of a 1 0-m-diamater device operating above threshold. 10 Fig. 4 (d) illustrates light vs. current (L-I) curve for a …
FIG. 5 2(a). Before (or after) growing any number of the device layers 204, a sacrificial Inx Gai- xN layer 202 is grown overlying the substrate 206. This …
FIG. 15 2(b). Additionally, a metal contact may be made to the n-type GaN grown underneath the sacrificial layer, which may aid in the extraction of carriers …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a device, comprising: providing a I II -nitride substrate; growing one or more Indium Gallium Nitride (InGaN) sacrificial layers on or above the III -nitride substrate; growing one or more I II -nitride device layers on or above the InGaN sacrificial layers; and selectively etching the InGaN sacrificial layers to separate the I II -nitride device layers from the I II -nitride substrate without substantially etching the I II -nitride device layers or the III- nitride substrate, wherein the selectively etched InGaN sacrificial layers are crystal layers.
A device, comprising: a I II -nitride substrate; one or more Indium Gallium Nitride (InGaN) sacrificial layers grown on or above the III- nitride substrate; and one or more I II -nitride device layers grown on or above the InGaN sacrificial layers; wherein the InGaN sacrificial layers are selectively etched layers used to separate the III- nitride device layers from the I II -nitride substrate without the I II -nitride device layers or the III- nitride substrate being substantially etched, and the selectively etched layers are crystal layers.
The device of claim 2, wherein the device comprises an optoelectronic, electronic or thermoelectric device.
The device of claim 2, wherein the I II -nitride substrate is an epitaxy-ready bulk or free-standing I II -nitride substrate. -2- G&C 30794.446-US-C₃
The device of claim 2, wherein the III -nitride substrate is Gallium Nitride (GaN).
The device of claim 2, wherein the I II -nitride substrate is reusable after the I II -nitride device layers are separated from the I II -nitride substrate.
The device of claim 2, wherein the I II -nitride substrate has been previously used to grow a I II -nitride device structure.
The device of claim 2, wherein the InGaN sacrificial layers are grown on an etched or etched and polished surface of the I II -nitride substrate.
The device of claim 2, wherein the InGaN sacrificial layers are selectively etched layers used to separate the I II -nitride device layers from the III- nitride substrate without the I II -nitride device layers or the I II -nitride substrate being damaged, -3- G&C 30794.446-US-C₃ such that performance of the I II -nitride device layers is not degraded and the I II -nitride substrate can be reused.
The device of claim 2, wherein the InGaN sacrificial layers are selectively etched laterally and are completely removed, thereby freeing the I II -nitride substrate from the I II -nitride device layers.
The device of claim 2, wherein the InGaN sacrificial layers are exposed before being selectively etched.
The device of claim 2, further comprising one or more epitaxial layers grown on or above the I II -nitride substrate, wherein the InGaN sacrificial layers are grown on or above the epitaxial layers.
The device of claim 2, wherein the I II -nitride device layers are sub-mounted to a carrier substrate.
A device, comprising: a I II -nitride substrate; one or more Indium Gallium Nitride (InGaN) sacrificial layers grown on or above the III- nitride substrate; and one or more I II -nitride device layers grown on or above the InGaN sacrificial layers; -4- G&C 30794.446-US-C₃ wherein the III-nitride substrate is separated from the I II -nitride device layers after the InGaN sacrificial layers are selectively etched, and the selectively etched InGaN sacrificial layers are crystal layers. -5-G&C 30794.446-US-C₃
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride optoelectronic/electronic/thermoelectric device with InGaN sacrificial layer on III-nitride substrate
Materials described outside the worked examples.
III-nitride substrate
Indium Gallium Nitride sacrificial layer
InxGa₁-xN
III-nitride device layers
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 (a) and 1 (b) are a pair of scanning electron microscope (SEM) images 30 showing epitaxial device layers after removal from a bulk GaN substrate, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
III-nitride substrate surface roughness after reprocessing | ≤ 1 nm RMS | III-nitride substrate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,773,704Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 (a) and 1 (b) are a pair of scanning electron microscope (SEM) images 30 showing epitaxial device layers after removal from a bulk GaN substrate, …
FIGS. 2 (a), 2 (b), 2 (c) and 2 (d) together illustrate an exemplary process flow for substrate removal using PEC etching.
FIG. 3 illustrates a method of fabricating a device.
FIG. 4 (c) shows the near-field pattern of a 1 0-m-diamater device operating above threshold. 10 Fig. 4 (d) illustrates light vs. current (L-I) curve for a …
FIG. 5 2(a). Before (or after) growing any number of the device layers 204, a sacrificial Inx Gai- xN layer 202 is grown overlying the substrate 206. This …
FIG. 15 2(b). Additionally, a metal contact may be made to the n-type GaN grown underneath the sacrificial layer, which may aid in the extraction of carriers …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a device, comprising: providing a I II -nitride substrate; growing one or more Indium Gallium Nitride (InGaN) sacrificial layers on or above the III -nitride substrate; growing one or more I II -nitride device layers on or above the InGaN sacrificial layers; and selectively etching the InGaN sacrificial layers to separate the I II -nitride device layers from the I II -nitride substrate without substantially etching the I II -nitride device layers or the III- nitride substrate, wherein the selectively etched InGaN sacrificial layers are crystal layers.
A device, comprising: a I II -nitride substrate; one or more Indium Gallium Nitride (InGaN) sacrificial layers grown on or above the III- nitride substrate; and one or more I II -nitride device layers grown on or above the InGaN sacrificial layers; wherein the InGaN sacrificial layers are selectively etched layers used to separate the III- nitride device layers from the I II -nitride substrate without the I II -nitride device layers or the III- nitride substrate being substantially etched, and the selectively etched layers are crystal layers.
The device of claim 2, wherein the device comprises an optoelectronic, electronic or thermoelectric device.
The device of claim 2, wherein the I II -nitride substrate is an epitaxy-ready bulk or free-standing I II -nitride substrate. -2- G&C 30794.446-US-C₃
The device of claim 2, wherein the III -nitride substrate is Gallium Nitride (GaN).
The device of claim 2, wherein the I II -nitride substrate is reusable after the I II -nitride device layers are separated from the I II -nitride substrate.
The device of claim 2, wherein the I II -nitride substrate has been previously used to grow a I II -nitride device structure.
The device of claim 2, wherein the InGaN sacrificial layers are grown on an etched or etched and polished surface of the I II -nitride substrate.
The device of claim 2, wherein the InGaN sacrificial layers are selectively etched layers used to separate the I II -nitride device layers from the III- nitride substrate without the I II -nitride device layers or the I II -nitride substrate being damaged, -3- G&C 30794.446-US-C₃ such that performance of the I II -nitride device layers is not degraded and the I II -nitride substrate can be reused.
The device of claim 2, wherein the InGaN sacrificial layers are selectively etched laterally and are completely removed, thereby freeing the I II -nitride substrate from the I II -nitride device layers.
The device of claim 2, wherein the InGaN sacrificial layers are exposed before being selectively etched.
The device of claim 2, further comprising one or more epitaxial layers grown on or above the I II -nitride substrate, wherein the InGaN sacrificial layers are grown on or above the epitaxial layers.
The device of claim 2, wherein the I II -nitride device layers are sub-mounted to a carrier substrate.
A device, comprising: a I II -nitride substrate; one or more Indium Gallium Nitride (InGaN) sacrificial layers grown on or above the III- nitride substrate; and one or more I II -nitride device layers grown on or above the InGaN sacrificial layers; -4- G&C 30794.446-US-C₃ wherein the III-nitride substrate is separated from the I II -nitride device layers after the InGaN sacrificial layers are selectively etched, and the selectively etched InGaN sacrificial layers are crystal layers. -5-G&C 30794.446-US-C₃
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride optoelectronic/electronic/thermoelectric device with InGaN sacrificial layer on III-nitride substrate
Materials described outside the worked examples.
III-nitride substrate
Indium Gallium Nitride sacrificial layer
InxGa₁-xN
III-nitride device layers
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 (a) and 1 (b) are a pair of scanning electron microscope (SEM) images 30 showing epitaxial device layers after removal from a bulk GaN substrate, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
III-nitride substrate surface roughness after reprocessing | ≤ 1 nm RMS | III-nitride substrate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,773,704Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 (a) and 1 (b) are a pair of scanning electron microscope (SEM) images 30 showing epitaxial device layers after removal from a bulk GaN substrate, …
FIGS. 2 (a), 2 (b), 2 (c) and 2 (d) together illustrate an exemplary process flow for substrate removal using PEC etching.
FIG. 3 illustrates a method of fabricating a device.
FIG. 4 (c) shows the near-field pattern of a 1 0-m-diamater device operating above threshold. 10 Fig. 4 (d) illustrates light vs. current (L-I) curve for a …
FIG. 5 2(a). Before (or after) growing any number of the device layers 204, a sacrificial Inx Gai- xN layer 202 is grown overlying the substrate 206. This …
FIG. 15 2(b). Additionally, a metal contact may be made to the n-type GaN grown underneath the sacrificial layer, which may aid in the extraction of carriers …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a device, comprising: providing a I II -nitride substrate; growing one or more Indium Gallium Nitride (InGaN) sacrificial layers on or above the III -nitride substrate; growing one or more I II -nitride device layers on or above the InGaN sacrificial layers; and selectively etching the InGaN sacrificial layers to separate the I II -nitride device layers from the I II -nitride substrate without substantially etching the I II -nitride device layers or the III- nitride substrate, wherein the selectively etched InGaN sacrificial layers are crystal layers.
A device, comprising: a I II -nitride substrate; one or more Indium Gallium Nitride (InGaN) sacrificial layers grown on or above the III- nitride substrate; and one or more I II -nitride device layers grown on or above the InGaN sacrificial layers; wherein the InGaN sacrificial layers are selectively etched layers used to separate the III- nitride device layers from the I II -nitride substrate without the I II -nitride device layers or the III- nitride substrate being substantially etched, and the selectively etched layers are crystal layers.
The device of claim 2, wherein the device comprises an optoelectronic, electronic or thermoelectric device.
The device of claim 2, wherein the I II -nitride substrate is an epitaxy-ready bulk or free-standing I II -nitride substrate. -2- G&C 30794.446-US-C₃
The device of claim 2, wherein the III -nitride substrate is Gallium Nitride (GaN).
The device of claim 2, wherein the I II -nitride substrate is reusable after the I II -nitride device layers are separated from the I II -nitride substrate.
The device of claim 2, wherein the I II -nitride substrate has been previously used to grow a I II -nitride device structure.
The device of claim 2, wherein the InGaN sacrificial layers are grown on an etched or etched and polished surface of the I II -nitride substrate.
The device of claim 2, wherein the InGaN sacrificial layers are selectively etched layers used to separate the I II -nitride device layers from the III- nitride substrate without the I II -nitride device layers or the I II -nitride substrate being damaged, -3- G&C 30794.446-US-C₃ such that performance of the I II -nitride device layers is not degraded and the I II -nitride substrate can be reused.
The device of claim 2, wherein the InGaN sacrificial layers are selectively etched laterally and are completely removed, thereby freeing the I II -nitride substrate from the I II -nitride device layers.
The device of claim 2, wherein the InGaN sacrificial layers are exposed before being selectively etched.
The device of claim 2, further comprising one or more epitaxial layers grown on or above the I II -nitride substrate, wherein the InGaN sacrificial layers are grown on or above the epitaxial layers.
The device of claim 2, wherein the I II -nitride device layers are sub-mounted to a carrier substrate.
A device, comprising: a I II -nitride substrate; one or more Indium Gallium Nitride (InGaN) sacrificial layers grown on or above the III- nitride substrate; and one or more I II -nitride device layers grown on or above the InGaN sacrificial layers; -4- G&C 30794.446-US-C₃ wherein the III-nitride substrate is separated from the I II -nitride device layers after the InGaN sacrificial layers are selectively etched, and the selectively etched InGaN sacrificial layers are crystal layers. -5-G&C 30794.446-US-C₃
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride optoelectronic/electronic/thermoelectric device with InGaN sacrificial layer on III-nitride substrate
Materials described outside the worked examples.
III-nitride substrate
Indium Gallium Nitride sacrificial layer
InxGa₁-xN
III-nitride device layers
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 (a) and 1 (b) are a pair of scanning electron microscope (SEM) images 30 showing epitaxial device layers after removal from a bulk GaN substrate, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
III-nitride substrate surface roughness after reprocessing | ≤ 1 nm RMS | III-nitride substrate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,773,704Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 (a) and 1 (b) are a pair of scanning electron microscope (SEM) images 30 showing epitaxial device layers after removal from a bulk GaN substrate, …
FIGS. 2 (a), 2 (b), 2 (c) and 2 (d) together illustrate an exemplary process flow for substrate removal using PEC etching.
FIG. 3 illustrates a method of fabricating a device.
FIG. 4 (c) shows the near-field pattern of a 1 0-m-diamater device operating above threshold. 10 Fig. 4 (d) illustrates light vs. current (L-I) curve for a …
FIG. 5 2(a). Before (or after) growing any number of the device layers 204, a sacrificial Inx Gai- xN layer 202 is grown overlying the substrate 206. This …
FIG. 15 2(b). Additionally, a metal contact may be made to the n-type GaN grown underneath the sacrificial layer, which may aid in the extraction of carriers …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a device, comprising: providing a I II -nitride substrate; growing one or more Indium Gallium Nitride (InGaN) sacrificial layers on or above the III -nitride substrate; growing one or more I II -nitride device layers on or above the InGaN sacrificial layers; and selectively etching the InGaN sacrificial layers to separate the I II -nitride device layers from the I II -nitride substrate without substantially etching the I II -nitride device layers or the III- nitride substrate, wherein the selectively etched InGaN sacrificial layers are crystal layers.
A device, comprising: a I II -nitride substrate; one or more Indium Gallium Nitride (InGaN) sacrificial layers grown on or above the III- nitride substrate; and one or more I II -nitride device layers grown on or above the InGaN sacrificial layers; wherein the InGaN sacrificial layers are selectively etched layers used to separate the III- nitride device layers from the I II -nitride substrate without the I II -nitride device layers or the III- nitride substrate being substantially etched, and the selectively etched layers are crystal layers.
The device of claim 2, wherein the device comprises an optoelectronic, electronic or thermoelectric device.
The device of claim 2, wherein the I II -nitride substrate is an epitaxy-ready bulk or free-standing I II -nitride substrate. -2- G&C 30794.446-US-C₃
The device of claim 2, wherein the III -nitride substrate is Gallium Nitride (GaN).
The device of claim 2, wherein the I II -nitride substrate is reusable after the I II -nitride device layers are separated from the I II -nitride substrate.
The device of claim 2, wherein the I II -nitride substrate has been previously used to grow a I II -nitride device structure.
The device of claim 2, wherein the InGaN sacrificial layers are grown on an etched or etched and polished surface of the I II -nitride substrate.
The device of claim 2, wherein the InGaN sacrificial layers are selectively etched layers used to separate the I II -nitride device layers from the III- nitride substrate without the I II -nitride device layers or the I II -nitride substrate being damaged, -3- G&C 30794.446-US-C₃ such that performance of the I II -nitride device layers is not degraded and the I II -nitride substrate can be reused.
The device of claim 2, wherein the InGaN sacrificial layers are selectively etched laterally and are completely removed, thereby freeing the I II -nitride substrate from the I II -nitride device layers.
The device of claim 2, wherein the InGaN sacrificial layers are exposed before being selectively etched.
The device of claim 2, further comprising one or more epitaxial layers grown on or above the I II -nitride substrate, wherein the InGaN sacrificial layers are grown on or above the epitaxial layers.
The device of claim 2, wherein the I II -nitride device layers are sub-mounted to a carrier substrate.
A device, comprising: a I II -nitride substrate; one or more Indium Gallium Nitride (InGaN) sacrificial layers grown on or above the III- nitride substrate; and one or more I II -nitride device layers grown on or above the InGaN sacrificial layers; -4- G&C 30794.446-US-C₃ wherein the III-nitride substrate is separated from the I II -nitride device layers after the InGaN sacrificial layers are selectively etched, and the selectively etched InGaN sacrificial layers are crystal layers. -5-G&C 30794.446-US-C₃
Layer stacks claimed or described, ordered top of device to substrate.
III-nitride optoelectronic/electronic/thermoelectric device with InGaN sacrificial layer on III-nitride substrate
Materials described outside the worked examples.
III-nitride substrate
Indium Gallium Nitride sacrificial layer
InxGa₁-xN
III-nitride device layers
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1 (a) and 1 (b) are a pair of scanning electron microscope (SEM) images 30 showing epitaxial device layers after removal from a bulk GaN substrate, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
III-nitride substrate surface roughness after reprocessing | ≤ 1 nm RMS | III-nitride substrate |
Related documents with shared materials, methods, properties, or citations.
Gallium Nitride substrate
GaN
carrier substrate/submount
FIG. 4 (c) shows the near-field pattern of a 1 0-m-diamater device operating above threshold. 10 Fig. 4 (d) illustrates light vs. current (L-I) curve for a …
FIG. 5 2(a). Before (or after) growing any number of the device layers 204, a sacrificial Inx Gai- xN layer 202 is grown overlying the substrate 206. This …
Gallium Nitride substrate
GaN
carrier substrate/submount
FIG. 4 (c) shows the near-field pattern of a 1 0-m-diamater device operating above threshold. 10 Fig. 4 (d) illustrates light vs. current (L-I) curve for a …
FIG. 5 2(a). Before (or after) growing any number of the device layers 204, a sacrificial Inx Gai- xN layer 202 is grown overlying the substrate 206. This …
Gallium Nitride substrate
GaN
carrier substrate/submount
FIG. 4 (c) shows the near-field pattern of a 1 0-m-diamater device operating above threshold. 10 Fig. 4 (d) illustrates light vs. current (L-I) curve for a …
FIG. 5 2(a). Before (or after) growing any number of the device layers 204, a sacrificial Inx Gai- xN layer 202 is grown overlying the substrate 206. This …
Gallium Nitride substrate
GaN
carrier substrate/submount
FIG. 4 (c) shows the near-field pattern of a 1 0-m-diamater device operating above threshold. 10 Fig. 4 (d) illustrates light vs. current (L-I) curve for a …
FIG. 5 2(a). Before (or after) growing any number of the device layers 204, a sacrificial Inx Gai- xN layer 202 is grown overlying the substrate 206. This …