canceled

canceled

Te ehed efCtaim-fw ere pisigA method of preparing GaN material, the method comprising: heating t h e a N-polar GaN substrate to 700 0 C under an ultra high vacuum p rior to said deposition a desefptien, then subjecting the N-polar GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of A l N to the N-polar GaN substrate, then growin g GaN on the A l N layer b y molecular beam epitaxy.

canceled

A method of preparing GaN material, the method comprising: cleaning a N-polar GaN substrate using solvents and hydrofluoric acid, then heating the N-polar GaN substrate to 700 0 C under an ultra high vacuum, then subjecting the N-polar GaN substrate to at least three cycles of Ga deposition and desorption, then applying a layer of A l N to the N-polar GaN substrate, then growing GaN on the A l N layer by molecular beam epitaxy.

canceled

canceled

Te ehed efCtaim-fw ere pisigA method of preparing GaN material, the method comprising: heating t h e a N-polar GaN substrate to 700 0 C under an ultra high vacuum p rior to said deposition a desefptien, then subjecting the N-polar GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of A l N to the N-polar GaN substrate, then growin g GaN on the A l N layer b y molecular beam epitaxy.

canceled

A method of preparing GaN material, the method comprising: cleaning a N-polar GaN substrate using solvents and hydrofluoric acid, then heating the N-polar GaN substrate to 700 0 C under an ultra high vacuum, then subjecting the N-polar GaN substrate to at least three cycles of Ga deposition and desorption, then applying a layer of A l N to the N-polar GaN substrate, then growing GaN on the A l N layer by molecular beam epitaxy.

canceled

canceled

Te ehed efCtaim-fw ere pisigA method of preparing GaN material, the method comprising: heating t h e a N-polar GaN substrate to 700 0 C under an ultra high vacuum p rior to said deposition a desefptien, then subjecting the N-polar GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of A l N to the N-polar GaN substrate, then growin g GaN on the A l N layer b y molecular beam epitaxy.

canceled

A method of preparing GaN material, the method comprising: cleaning a N-polar GaN substrate using solvents and hydrofluoric acid, then heating the N-polar GaN substrate to 700 0 C under an ultra high vacuum, then subjecting the N-polar GaN substrate to at least three cycles of Ga deposition and desorption, then applying a layer of A l N to the N-polar GaN substrate, then growing GaN on the A l N layer by molecular beam epitaxy.

canceled

canceled

Te ehed efCtaim-fw ere pisigA method of preparing GaN material, the method comprising: heating t h e a N-polar GaN substrate to 700 0 C under an ultra high vacuum p rior to said deposition a desefptien, then subjecting the N-polar GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of A l N to the N-polar GaN substrate, then growin g GaN on the A l N layer b y molecular beam epitaxy.

canceled

A method of preparing GaN material, the method comprising: cleaning a N-polar GaN substrate using solvents and hydrofluoric acid, then heating the N-polar GaN substrate to 700 0 C under an ultra high vacuum, then subjecting the N-polar GaN substrate to at least three cycles of Ga deposition and desorption, then applying a layer of A l N to the N-polar GaN substrate, then growing GaN on the A l N layer by molecular beam epitaxy.