Patent
US 8,986,835GaN Nanorod and Formation Method
Isaac Harshman Wildeson
US
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Patent
Atlas literature
Patent
US 8,986,835Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. Please replace paragraph [0027] of the specification, as filed, with the following amended paragraph: [0027] About 1 um wide strips of SiO x can be …
FIG. 7. This amendment co rr ects the defect in the previous attempted amendment, as identified in the most recent Office Communications. No new matter is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A method for growing a nanorod, the method comprising: providing SiO x for patterning strips and pads; providing a substrate having a GaN thin film; patterning SiO x strips on the GaN film to form a SiO x template; patterning a SiO x pad coupled to the SiO x template; growing GaN through the SiO x template until the height of GaN is slightly higher than that of the SiO x strips; growing the GaN laterally to cover the SiO x template but not cover the SiO x pad; depositing a SiN x layer on top of the GaN; etching a growth opening th r ough the SiN x layer and the GaN into the underlying S iOx strips; and growing a GaN nanorod through the growth opening, the GaN nanorod having a nanopore running substantially through the centerline of the nanorod to the growth opening.
The method of claim 15, further comprising removing the SiN x layer, the SiO x template and the SiO x pad after the growing step.
The method of claim 15, wherein etching is done using focused ion beam etching, and the growing of the GaN nanorodis done using organometallic vapor phase epitaxy. 18-23.
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Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Porous GaN nanorods were grown in an Aixtron 200HT OMVPE reactor. Samples were heated to about 1030°C in a 2:3 NH3:H₂ mixture and held for approximately 3 minutes to recrystallize damaged GaN. Growth of porous nanorods lasted about 30–60 seconds at 1030°C with hydrogen as carrier gas. The result is a nanorod with a generally cylindrical-shaped pore running through its center and into the underlying etched region below.
4 materials1 process step
About 1 µm wide strips of SiOx are patterned on the GaN surface along with a larger SiOx pad. GaN is grown at a V/III ratio of about 1427 until height slightly exceeds SiOx strip height. Growth conditions are then adjusted to promote lateral GaN growth over the SiOx template. 80 nm of SiNx is deposited and pores are etched through into the underlying SiOx strips. GaN nanorods are then grown through the openings.
Layer stacks claimed or described, ordered top of device to substrate.
GaN nanorod with nanopore
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. Please replace paragraph [0027] of the specification, as filed, with the following amended paragraph: [0027] About 1 um wide strips of SiO x can be …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,986,835Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. Please replace paragraph [0027] of the specification, as filed, with the following amended paragraph: [0027] About 1 um wide strips of SiO x can be …
FIG. 7. This amendment co rr ects the defect in the previous attempted amendment, as identified in the most recent Office Communications. No new matter is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-14
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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A method for growing a nanorod, the method comprising: providing SiO x for patterning strips and pads; providing a substrate having a GaN thin film; patterning SiO x strips on the GaN film to form a SiO x template; patterning a SiO x pad coupled to the SiO x template; growing GaN through the SiO x template until the height of GaN is slightly higher than that of the SiO x strips; growing the GaN laterally to cover the SiO x template but not cover the SiO x pad; depositing a SiN x layer on top of the GaN; etching a growth opening th r ough the SiN x layer and the GaN into the underlying S iOx strips; and growing a GaN nanorod through the growth opening, the GaN nanorod having a nanopore running substantially through the centerline of the nanorod to the growth opening.
The method of claim 15, further comprising removing the SiN x layer, the SiO x template and the SiO x pad after the growing step.
The method of claim 15, wherein etching is done using focused ion beam etching, and the growing of the GaN nanorodis done using organometallic vapor phase epitaxy. 18-23.
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Porous GaN nanorods were grown in an Aixtron 200HT OMVPE reactor. Samples were heated to about 1030°C in a 2:3 NH3:H₂ mixture and held for approximately 3 minutes to recrystallize damaged GaN. Growth of porous nanorods lasted about 30–60 seconds at 1030°C with hydrogen as carrier gas. The result is a nanorod with a generally cylindrical-shaped pore running through its center and into the underlying etched region below.
4 materials1 process step
About 1 µm wide strips of SiOx are patterned on the GaN surface along with a larger SiOx pad. GaN is grown at a V/III ratio of about 1427 until height slightly exceeds SiOx strip height. Growth conditions are then adjusted to promote lateral GaN growth over the SiOx template. 80 nm of SiNx is deposited and pores are etched through into the underlying SiOx strips. GaN nanorods are then grown through the openings.
Layer stacks claimed or described, ordered top of device to substrate.
GaN nanorod with nanopore
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. Please replace paragraph [0027] of the specification, as filed, with the following amended paragraph: [0027] About 1 um wide strips of SiO x can be …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,986,835Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. Please replace paragraph [0027] of the specification, as filed, with the following amended paragraph: [0027] About 1 um wide strips of SiO x can be …
FIG. 7. This amendment co rr ects the defect in the previous attempted amendment, as identified in the most recent Office Communications. No new matter is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-14
canceled
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canceled
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A method for growing a nanorod, the method comprising: providing SiO x for patterning strips and pads; providing a substrate having a GaN thin film; patterning SiO x strips on the GaN film to form a SiO x template; patterning a SiO x pad coupled to the SiO x template; growing GaN through the SiO x template until the height of GaN is slightly higher than that of the SiO x strips; growing the GaN laterally to cover the SiO x template but not cover the SiO x pad; depositing a SiN x layer on top of the GaN; etching a growth opening th r ough the SiN x layer and the GaN into the underlying S iOx strips; and growing a GaN nanorod through the growth opening, the GaN nanorod having a nanopore running substantially through the centerline of the nanorod to the growth opening.
The method of claim 15, further comprising removing the SiN x layer, the SiO x template and the SiO x pad after the growing step.
The method of claim 15, wherein etching is done using focused ion beam etching, and the growing of the GaN nanorodis done using organometallic vapor phase epitaxy. 18-23.
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Porous GaN nanorods were grown in an Aixtron 200HT OMVPE reactor. Samples were heated to about 1030°C in a 2:3 NH3:H₂ mixture and held for approximately 3 minutes to recrystallize damaged GaN. Growth of porous nanorods lasted about 30–60 seconds at 1030°C with hydrogen as carrier gas. The result is a nanorod with a generally cylindrical-shaped pore running through its center and into the underlying etched region below.
4 materials1 process step
About 1 µm wide strips of SiOx are patterned on the GaN surface along with a larger SiOx pad. GaN is grown at a V/III ratio of about 1427 until height slightly exceeds SiOx strip height. Growth conditions are then adjusted to promote lateral GaN growth over the SiOx template. 80 nm of SiNx is deposited and pores are etched through into the underlying SiOx strips. GaN nanorods are then grown through the openings.
Layer stacks claimed or described, ordered top of device to substrate.
GaN nanorod with nanopore
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. Please replace paragraph [0027] of the specification, as filed, with the following amended paragraph: [0027] About 1 um wide strips of SiO x can be …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,986,835Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. Please replace paragraph [0027] of the specification, as filed, with the following amended paragraph: [0027] About 1 um wide strips of SiO x can be …
FIG. 7. This amendment co rr ects the defect in the previous attempted amendment, as identified in the most recent Office Communications. No new matter is …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-14
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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A method for growing a nanorod, the method comprising: providing SiO x for patterning strips and pads; providing a substrate having a GaN thin film; patterning SiO x strips on the GaN film to form a SiO x template; patterning a SiO x pad coupled to the SiO x template; growing GaN through the SiO x template until the height of GaN is slightly higher than that of the SiO x strips; growing the GaN laterally to cover the SiO x template but not cover the SiO x pad; depositing a SiN x layer on top of the GaN; etching a growth opening th r ough the SiN x layer and the GaN into the underlying S iOx strips; and growing a GaN nanorod through the growth opening, the GaN nanorod having a nanopore running substantially through the centerline of the nanorod to the growth opening.
The method of claim 15, further comprising removing the SiN x layer, the SiO x template and the SiO x pad after the growing step.
The method of claim 15, wherein etching is done using focused ion beam etching, and the growing of the GaN nanorodis done using organometallic vapor phase epitaxy. 18-23.
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
Porous GaN nanorods were grown in an Aixtron 200HT OMVPE reactor. Samples were heated to about 1030°C in a 2:3 NH3:H₂ mixture and held for approximately 3 minutes to recrystallize damaged GaN. Growth of porous nanorods lasted about 30–60 seconds at 1030°C with hydrogen as carrier gas. The result is a nanorod with a generally cylindrical-shaped pore running through its center and into the underlying etched region below.
4 materials1 process step
About 1 µm wide strips of SiOx are patterned on the GaN surface along with a larger SiOx pad. GaN is grown at a V/III ratio of about 1427 until height slightly exceeds SiOx strip height. Growth conditions are then adjusted to promote lateral GaN growth over the SiOx template. 80 nm of SiNx is deposited and pores are etched through into the underlying SiOx strips. GaN nanorods are then grown through the openings.
Layer stacks claimed or described, ordered top of device to substrate.
GaN nanorod with nanopore
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1A. Please replace paragraph [0027] of the specification, as filed, with the following amended paragraph: [0027] About 1 um wide strips of SiO x can be …
Related documents with shared materials, methods, properties, or citations.