Patent
Atlas literature
Patent
US 12,553,150 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating a method for producing a gallium nitride single crystal substrate according to one embodiment of the present invention.
FIG. 2A is a schematic cross-sectional view illustrating a part of a method for producing a gallium nitride single crystal substrate according to one …
FIG. 3 is an SEM image illustrating an example of etch pits formed on the main surface of the gallium nitride single crystal substrate according to one …
FIG. 4 illustrates histograms of etch pit diameters for the substrate of example 1.
FIG. 5 illustrates histograms of etch pit diameters for the substrate of example 2.
FIG. 6 illustrates histograms of etch pit diameters for the substrate of comparative example 3.
FIG. 7 illustrates a histogram of etch pit diameters at five locations in the plane of the substrate of example 1.
FIG. 8 illustrates a histogram of etch pit diameters for the substrate of comparative example 1.
FIG. 9 illustrates a histogram of etch pit diameters for the substrate of comparative example 2.
FIG. 10 is a histogram of etch pit diameters for the substrate of comparative example 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which Ge concentration in the substrate is 3×1018 cm⁻³ or more; and among peaks appearing in a histogram of diameters of etch pits during etching applied to the main surface with an alkaline etching solution, a first peak having a smallest diameter is a single peak having no shoulder.
The gallium nitride single crystal substrate according to claim 1, wherein when a frequency of the first peak is A, there are two peaks appearing in the histogram having a frequency of A/10 or more, including the first peak.
The gallium nitride single crystal substrate of according to claim 1, wherein in histograms in a plurality of different regions on the main surface, the first peak is a single peak without a shoulder in all of the plurality of histograms.
The gallium nitride single crystal substrate according to claim 1, wherein, when an etch pit diameter of the first peak is a, in the histogram, the total number of etch pits having a diameter exceeding 4 a is 1⁄1000 or less of the number of the etch pits constituting the first peak.
The gallium nitride single crystal substrate according to claim 1, wherein an average density of the etch pits is less than 1×106 cm⁻².
The gallium nitride single crystal substrate according to claim 1, wherein the histogram is measured from a region having an area of 1 mm2 or more.
A method for producing a gallium nitride single crystal substrate, the method including the steps of: (a) preparing a base substrate composed of a gallium nitride single crystal having (0001) that is a low-index crystal plane closest to a main surface; (b) epitaxially growing the gallium nitride single crystal having a Ge concentration of 3×1018 cm⁻³ or more on the main surface of the base substrate; and (c) obtaining a gallium nitride single crystal substrate having a diameter of 50 mm or more, from the gallium nitride single crystal epitaxially grown in the step (b), wherein in the step (b), a gas containing HCl is intermit-tently introduced to periodically etch a growth interface, thereby uniformly doping the crystal with Ge. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride single crystal substrate
Materials described outside the worked examples.
Ge-doped gallium nitride single crystal
GaN:Ge
HCl gas
HCl
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an SEM image illustrating an example of etch pits formed on the main surface of the gallium nitride single crystal substrate according to one …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ge concentration in substrate | ≥ 3000000000000000000 cm⁻³ | GaN:Ge |
average etch pit density (claimed upper limit) | ≤ 1000000 cm⁻² |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,553,150 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating a method for producing a gallium nitride single crystal substrate according to one embodiment of the present invention.
FIG. 2A is a schematic cross-sectional view illustrating a part of a method for producing a gallium nitride single crystal substrate according to one …
FIG. 3 is an SEM image illustrating an example of etch pits formed on the main surface of the gallium nitride single crystal substrate according to one …
FIG. 4 illustrates histograms of etch pit diameters for the substrate of example 1.
FIG. 5 illustrates histograms of etch pit diameters for the substrate of example 2.
FIG. 6 illustrates histograms of etch pit diameters for the substrate of comparative example 3.
FIG. 7 illustrates a histogram of etch pit diameters at five locations in the plane of the substrate of example 1.
FIG. 8 illustrates a histogram of etch pit diameters for the substrate of comparative example 1.
FIG. 9 illustrates a histogram of etch pit diameters for the substrate of comparative example 2.
FIG. 10 is a histogram of etch pit diameters for the substrate of comparative example 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which Ge concentration in the substrate is 3×1018 cm⁻³ or more; and among peaks appearing in a histogram of diameters of etch pits during etching applied to the main surface with an alkaline etching solution, a first peak having a smallest diameter is a single peak having no shoulder.
The gallium nitride single crystal substrate according to claim 1, wherein when a frequency of the first peak is A, there are two peaks appearing in the histogram having a frequency of A/10 or more, including the first peak.
The gallium nitride single crystal substrate of according to claim 1, wherein in histograms in a plurality of different regions on the main surface, the first peak is a single peak without a shoulder in all of the plurality of histograms.
The gallium nitride single crystal substrate according to claim 1, wherein, when an etch pit diameter of the first peak is a, in the histogram, the total number of etch pits having a diameter exceeding 4 a is 1⁄1000 or less of the number of the etch pits constituting the first peak.
The gallium nitride single crystal substrate according to claim 1, wherein an average density of the etch pits is less than 1×106 cm⁻².
The gallium nitride single crystal substrate according to claim 1, wherein the histogram is measured from a region having an area of 1 mm2 or more.
A method for producing a gallium nitride single crystal substrate, the method including the steps of: (a) preparing a base substrate composed of a gallium nitride single crystal having (0001) that is a low-index crystal plane closest to a main surface; (b) epitaxially growing the gallium nitride single crystal having a Ge concentration of 3×1018 cm⁻³ or more on the main surface of the base substrate; and (c) obtaining a gallium nitride single crystal substrate having a diameter of 50 mm or more, from the gallium nitride single crystal epitaxially grown in the step (b), wherein in the step (b), a gas containing HCl is intermit-tently introduced to periodically etch a growth interface, thereby uniformly doping the crystal with Ge. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride single crystal substrate
Materials described outside the worked examples.
Ge-doped gallium nitride single crystal
GaN:Ge
HCl gas
HCl
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an SEM image illustrating an example of etch pits formed on the main surface of the gallium nitride single crystal substrate according to one …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ge concentration in substrate | ≥ 3000000000000000000 cm⁻³ | GaN:Ge |
average etch pit density (claimed upper limit) | ≤ 1000000 cm⁻² |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,553,150 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating a method for producing a gallium nitride single crystal substrate according to one embodiment of the present invention.
FIG. 2A is a schematic cross-sectional view illustrating a part of a method for producing a gallium nitride single crystal substrate according to one …
FIG. 3 is an SEM image illustrating an example of etch pits formed on the main surface of the gallium nitride single crystal substrate according to one …
FIG. 4 illustrates histograms of etch pit diameters for the substrate of example 1.
FIG. 5 illustrates histograms of etch pit diameters for the substrate of example 2.
FIG. 6 illustrates histograms of etch pit diameters for the substrate of comparative example 3.
FIG. 7 illustrates a histogram of etch pit diameters at five locations in the plane of the substrate of example 1.
FIG. 8 illustrates a histogram of etch pit diameters for the substrate of comparative example 1.
FIG. 9 illustrates a histogram of etch pit diameters for the substrate of comparative example 2.
FIG. 10 is a histogram of etch pit diameters for the substrate of comparative example 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which Ge concentration in the substrate is 3×1018 cm⁻³ or more; and among peaks appearing in a histogram of diameters of etch pits during etching applied to the main surface with an alkaline etching solution, a first peak having a smallest diameter is a single peak having no shoulder.
The gallium nitride single crystal substrate according to claim 1, wherein when a frequency of the first peak is A, there are two peaks appearing in the histogram having a frequency of A/10 or more, including the first peak.
The gallium nitride single crystal substrate of according to claim 1, wherein in histograms in a plurality of different regions on the main surface, the first peak is a single peak without a shoulder in all of the plurality of histograms.
The gallium nitride single crystal substrate according to claim 1, wherein, when an etch pit diameter of the first peak is a, in the histogram, the total number of etch pits having a diameter exceeding 4 a is 1⁄1000 or less of the number of the etch pits constituting the first peak.
The gallium nitride single crystal substrate according to claim 1, wherein an average density of the etch pits is less than 1×106 cm⁻².
The gallium nitride single crystal substrate according to claim 1, wherein the histogram is measured from a region having an area of 1 mm2 or more.
A method for producing a gallium nitride single crystal substrate, the method including the steps of: (a) preparing a base substrate composed of a gallium nitride single crystal having (0001) that is a low-index crystal plane closest to a main surface; (b) epitaxially growing the gallium nitride single crystal having a Ge concentration of 3×1018 cm⁻³ or more on the main surface of the base substrate; and (c) obtaining a gallium nitride single crystal substrate having a diameter of 50 mm or more, from the gallium nitride single crystal epitaxially grown in the step (b), wherein in the step (b), a gas containing HCl is intermit-tently introduced to periodically etch a growth interface, thereby uniformly doping the crystal with Ge. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride single crystal substrate
Materials described outside the worked examples.
Ge-doped gallium nitride single crystal
GaN:Ge
HCl gas
HCl
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an SEM image illustrating an example of etch pits formed on the main surface of the gallium nitride single crystal substrate according to one …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ge concentration in substrate | ≥ 3000000000000000000 cm⁻³ | GaN:Ge |
average etch pit density (claimed upper limit) | ≤ 1000000 cm⁻² |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,553,150 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating a method for producing a gallium nitride single crystal substrate according to one embodiment of the present invention.
FIG. 2A is a schematic cross-sectional view illustrating a part of a method for producing a gallium nitride single crystal substrate according to one …
FIG. 3 is an SEM image illustrating an example of etch pits formed on the main surface of the gallium nitride single crystal substrate according to one …
FIG. 4 illustrates histograms of etch pit diameters for the substrate of example 1.
FIG. 5 illustrates histograms of etch pit diameters for the substrate of example 2.
FIG. 6 illustrates histograms of etch pit diameters for the substrate of comparative example 3.
FIG. 7 illustrates a histogram of etch pit diameters at five locations in the plane of the substrate of example 1.
FIG. 8 illustrates a histogram of etch pit diameters for the substrate of comparative example 1.
FIG. 9 illustrates a histogram of etch pit diameters for the substrate of comparative example 2.
FIG. 10 is a histogram of etch pit diameters for the substrate of comparative example 3.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate having a diameter of 50 mm or more, with a low-index crystal plane closest to a main surface being (0001), and in which Ge concentration in the substrate is 3×1018 cm⁻³ or more; and among peaks appearing in a histogram of diameters of etch pits during etching applied to the main surface with an alkaline etching solution, a first peak having a smallest diameter is a single peak having no shoulder.
The gallium nitride single crystal substrate according to claim 1, wherein when a frequency of the first peak is A, there are two peaks appearing in the histogram having a frequency of A/10 or more, including the first peak.
The gallium nitride single crystal substrate of according to claim 1, wherein in histograms in a plurality of different regions on the main surface, the first peak is a single peak without a shoulder in all of the plurality of histograms.
The gallium nitride single crystal substrate according to claim 1, wherein, when an etch pit diameter of the first peak is a, in the histogram, the total number of etch pits having a diameter exceeding 4 a is 1⁄1000 or less of the number of the etch pits constituting the first peak.
The gallium nitride single crystal substrate according to claim 1, wherein an average density of the etch pits is less than 1×106 cm⁻².
The gallium nitride single crystal substrate according to claim 1, wherein the histogram is measured from a region having an area of 1 mm2 or more.
A method for producing a gallium nitride single crystal substrate, the method including the steps of: (a) preparing a base substrate composed of a gallium nitride single crystal having (0001) that is a low-index crystal plane closest to a main surface; (b) epitaxially growing the gallium nitride single crystal having a Ge concentration of 3×1018 cm⁻³ or more on the main surface of the base substrate; and (c) obtaining a gallium nitride single crystal substrate having a diameter of 50 mm or more, from the gallium nitride single crystal epitaxially grown in the step (b), wherein in the step (b), a gas containing HCl is intermit-tently introduced to periodically etch a growth interface, thereby uniformly doping the crystal with Ge. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride single crystal substrate
Materials described outside the worked examples.
Ge-doped gallium nitride single crystal
GaN:Ge
HCl gas
HCl
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an SEM image illustrating an example of etch pits formed on the main surface of the gallium nitride single crystal substrate according to one …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Ge concentration in substrate | ≥ 3000000000000000000 cm⁻³ | GaN:Ge |
average etch pit density (claimed upper limit) | ≤ 1000000 cm⁻² |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
GaCl
ammonia gas
NH₃
Temperature | 980–1020 °C | — |
Pressure | 0.3–30 Pa | — |
Pressure | 90–105 kPa | — |
Pressure | 90–95 kPa | — |
Pressure | 1.5–15 kPa | — |
Duration | 5–10 minutes | — |
Duration | 0.5–1 minute | — |
Thickness | 1–30 mm | — |
Thickness | 20–30 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 mm | — |
METHOD FOR PRODUCING GaN CRYSTAL
GaCl
ammonia gas
NH₃
Temperature | 980–1020 °C | — |
Pressure | 0.3–30 Pa | — |
Pressure | 90–105 kPa | — |
Pressure | 90–95 kPa | — |
Pressure | 1.5–15 kPa | — |
Duration | 5–10 minutes | — |
Duration | 0.5–1 minute | — |
Thickness | 1–30 mm | — |
Thickness | 20–30 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 mm | — |
METHOD FOR PRODUCING GaN CRYSTAL
GaCl
ammonia gas
NH₃
Temperature | 980–1020 °C | — |
Pressure | 0.3–30 Pa | — |
Pressure | 90–105 kPa | — |
Pressure | 90–95 kPa | — |
Pressure | 1.5–15 kPa | — |
Duration | 5–10 minutes | — |
Duration | 0.5–1 minute | — |
Thickness | 1–30 mm | — |
Thickness | 20–30 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 mm | — |
METHOD FOR PRODUCING GaN CRYSTAL
GaCl
ammonia gas
NH₃
Temperature | 980–1020 °C | — |
Pressure | 0.3–30 Pa | — |
Pressure | 90–105 kPa | — |
Pressure | 90–95 kPa | — |
Pressure | 1.5–15 kPa | — |
Duration | 5–10 minutes | — |
Duration | 0.5–1 minute | — |
Thickness | 1–30 mm | — |
Thickness | 20–30 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 mm | — |
METHOD FOR PRODUCING GaN CRYSTAL
