Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Huaide Zhang; Philipp John; Jingxuan Kang; Lutz Geelhaar; Yongjin Cho; Oliver Brandt

doi:10.1016/0022-0248\(86\

Paper details

Research paper

Experimental CharacterizationComputational Kinetic Model

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Huaide Zhang, Philipp John, Jingxuan Kang, Lutz Geelhaar et al.

2026·arXiv:2605.22279

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Commercial unintentionally doped GaN/Al₂O₃ template fabricated by MOCVD, with a Ti backside coating used for radiative heating.

3 characterizations3 properties5 figures

ExperimentalGaNStudied MaterialAl₂O₃Substrate / DielectricTiCapping Or Contact

GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂O₃ template under Ga-stable conditions, used for the adsorption-desorption experiments.

5 characterizations7 properties5 figures

ExperimentalGaNStudied MaterialAl₂O₃Substrate / DielectricTiCapping Or Contact

Materials

GaN

Studied Material

Also known as

wurtzite GaN(0001)

Variables

polarity= Ga-polar

surface_orientation= (0001)

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Surface Roughness Rms	RMS roughness	0.16nm	GaN	Commercial unintentionally doped GaN/Al₂O₃ template fabricat	—
Surface Roughness Rms	RMS roughness	0.37nm	GaN	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Film Thickness	GaN template thickness	4um	GaN	Commercial unintentionally doped GaN/Al₂O₃ template fabricat	—
Film Thickness	GaN buffer layer thickness	0.1um	GaN	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Film Thickness	Ti backside coating thickness	1um	Ti	Commercial unintentionally doped GaN/Al₂O₃ template fabricat GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (weighted mean)	2.87eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (RHEED)	2.82eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (LR)	2.87eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (QMS)	2.91eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—

Properties

Type	Label	Value	Material	Sample	Source
Surface Roughness Rms	RMS roughness	0.16nm	GaN	Commercial unintentionally doped GaN/Al₂O₃ template fabricat	—
Surface Roughness Rms	RMS roughness	0.37nm	GaN	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Film Thickness	GaN template thickness	4um	GaN	Commercial unintentionally doped GaN/Al₂O₃ template fabricat	—
Film Thickness	GaN buffer layer thickness	0.1um	GaN	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Film Thickness	Ti backside coating thickness	1um	Ti	Commercial unintentionally doped GaN/Al₂O₃ template fabricat GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (weighted mean)	2.87eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (RHEED)	2.82eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (LR)	2.87eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (QMS)	2.91eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—

Properties

Type	Label	Value	Material	Sample	Source
Surface Roughness Rms	RMS roughness	0.16nm	GaN	Commercial unintentionally doped GaN/Al₂O₃ template fabricat	—
Surface Roughness Rms	RMS roughness	0.37nm	GaN	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Film Thickness	GaN template thickness	4um	GaN	Commercial unintentionally doped GaN/Al₂O₃ template fabricat	—
Film Thickness	GaN buffer layer thickness	0.1um	GaN	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Film Thickness	Ti backside coating thickness	1um	Ti	Commercial unintentionally doped GaN/Al₂O₃ template fabricat GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (weighted mean)	2.87eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (RHEED)	2.82eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (LR)	2.87eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (QMS)	2.91eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—

Properties

Type	Label	Value	Material	Sample	Source
Surface Roughness Rms	RMS roughness	0.16nm	GaN	Commercial unintentionally doped GaN/Al₂O₃ template fabricat	—
Surface Roughness Rms	RMS roughness	0.37nm	GaN	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Film Thickness	GaN template thickness	4um	GaN	Commercial unintentionally doped GaN/Al₂O₃ template fabricat	—
Film Thickness	GaN buffer layer thickness	0.1um	GaN	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Film Thickness	Ti backside coating thickness	1um	Ti	Commercial unintentionally doped GaN/Al₂O₃ template fabricat GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (weighted mean)	2.87eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (RHEED)	2.82eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (LR)	2.87eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—
Activation Energy	Ga adlayer desorption activation energy (QMS)	2.91eV	GaN Ga	GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂	—

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Samples

Commercial unintentionally doped GaN/Al₂O₃ template fabricated by MOCVD, with a Ti backside coating used for radiative heating.

GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂O₃ template under Ga-stable conditions, used for the adsorption-desorption experiments.

Materials

Why these are connected

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Samples

Commercial unintentionally doped GaN/Al₂O₃ template fabricated by MOCVD, with a Ti backside coating used for radiative heating.

GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂O₃ template under Ga-stable conditions, used for the adsorption-desorption experiments.

Materials

Why these are connected

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Samples

Commercial unintentionally doped GaN/Al₂O₃ template fabricated by MOCVD, with a Ti backside coating used for radiative heating.

GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂O₃ template under Ga-stable conditions, used for the adsorption-desorption experiments.

Materials

Why these are connected

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Samples

Commercial unintentionally doped GaN/Al₂O₃ template fabricated by MOCVD, with a Ti backside coating used for radiative heating.

GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂O₃ template under Ga-stable conditions, used for the adsorption-desorption experiments.

Materials

Why these are connected

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Samples

Commercial unintentionally doped GaN/Al₂O₃ template fabricated by MOCVD, with a Ti backside coating used for radiative heating.

GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂O₃ template under Ga-stable conditions, used for the adsorption-desorption experiments.

Materials

Why these are connected

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Samples

Commercial unintentionally doped GaN/Al₂O₃ template fabricated by MOCVD, with a Ti backside coating used for radiative heating.

GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂O₃ template under Ga-stable conditions, used for the adsorption-desorption experiments.

Materials

Why these are connected

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Samples

Commercial unintentionally doped GaN/Al₂O₃ template fabricated by MOCVD, with a Ti backside coating used for radiative heating.

GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂O₃ template under Ga-stable conditions, used for the adsorption-desorption experiments.

Materials

Why these are connected

Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

Samples

Commercial unintentionally doped GaN/Al₂O₃ template fabricated by MOCVD, with a Ti backside coating used for radiative heating.

GaN buffer layer grown by plasma-assisted MBE on the GaN/Al₂O₃ template under Ga-stable conditions, used for the adsorption-desorption experiments.

Materials

Why these are connected

Characterization

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Characterization

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Characterization

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Characterization

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