Patent
US 10,373,825METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE USING CORE-SHELL NANOPARTICLE
Jea Gun PARK
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 10,373,825Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1I a and 1 l b respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. lb wherein coating with …
FIG. 2 is a graph illustrating a pH-dependent zeta potential change in nanopa r ticles with a core- shell structure manufactured by a method of fabricating a …
FIGS. 3a to 3c are scanning electron microscope (SEM) images illustrating nanoparticles with a core-shell structure coated on a temporary substrate …
FIG. 4a is a scanning electron microscope-cathodoluminescence (SEM-CL) image illustrating a central portion of a gallium nitride substrate, on which …
FIGS. 5 a to 5d are SEM images illustrating nanoparticles with a core-shell structure spin-coated using the method of fabricating a gallium nitride substrate …
FIG. 6b is an SEM image illustrating nanoparticles with a core-shell structure spin- coated and then thermally treated using a method of fabricating a gallium …
FIGS. 7a and 7b respectively illustrate enlarged optical microscope images of N-faces of a gallium nitride substrate allowed to grow without use of …
FIG. 8c is an image illustrating an edge face of a gallium nitride substrate allowed to grow using nanoparticles with a core-shell structure according to a …
FIG. 9a is an optical microscope i m age illustrating a surface of a sapphire substrate wherein growth of a gallium nitride substrate has been allowed without …
FIG. 10 a illustrates an SEM image of an interface of a gallium nitride substrate wherein growth of a gallium nitride substrate has been allowed without use of …
FIGS. 11e and 1l d respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. l b wherein coating with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, the method comprising: coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer; allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate; allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and SVG 15991464.08-08-2018.JKLKMYPCRXEAPX1.CLM.1.svg 0.16 2.32 Black and white wherein each of the nanoparticles with a core-shell structure comprises a core and an ionic polymer shell coated on a surface of the core surface.
The method according to claim 1, wherein a zeta potential of the nanoparticles with a core-shell structure is controlled by the shell.
The method according to claim 1, wherein the ionic polymer shell is made of a cationic polymer material, the cationic polymer material comprising at least one of poly(diallyldimethylammonium chloride) (PDDA), polyethyleneimine (P EI), polyaniline (PANI), polyallylamine hydrochloride (PAH), polyacrylamide (PAA), polyvinylimidazole, polyamidoamine (PAMAM), polymethacryloxyethyltrialkyl ammonium halide, polyallylamine chloride, aminoethylated polyacrylamide, polyvinylamine, Hoffman- degradated polyacrylamide, and polyethyleamine.
The method according to claim 1, wherein the ionic polymer shell is made of an anionic polymer material, the anionic polymer material comprising at least one of polyacrylic acid, polymethacrylic acid, polystyrene (PS), polysulfonic acid, a polyacrylamide/acrylic acid copolymer, a polyacrylic acid/sulfonic acid copolymer, a polysulfonic acid/acrylamide copolymer, a polyacrylic acid/malonic acid copolymer, and a polystyrene/acrylic acid copolymer.
The method according to claim 1, wherein the core comprises at least one of SiO 2, A₁ 2 0 3, TiO 2, ZrO 2, Cr O 2, W, Re, Mo, Cr, Co, Si, Au, Zr, Ta, Ti, Nb, Ni, Pt, V, Hf, Pd, BN, and nitrides of W, Re, Mo, Cr, Si, Zr, Ta, Ti, Nb, V, Hf and Fe.
The method according to claim 1, wherein, in the coating, spin coating is used.
The method according to claim 1, wherein, in the coating, allowing a buffer layer to grow on the temporary substrate is further comprised.
The method according to claim 1, wherein the temporary substrate comprises at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (I nP), and silicon carbide (SiC).
The method according to claim 1, wherein, in the separating, the temporary substrate is removed using laser lift-off (LLO).
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate fabricated via core-shell nanoparticle method
Materials described outside the worked examples.
pit gallium nitride (pit GaN) layer
GaN
nanoparticles with core-shell structure
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1I a and 1 l b respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. lb wherein coating with …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,373,825Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1I a and 1 l b respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. lb wherein coating with …
FIG. 2 is a graph illustrating a pH-dependent zeta potential change in nanopa r ticles with a core- shell structure manufactured by a method of fabricating a …
FIGS. 3a to 3c are scanning electron microscope (SEM) images illustrating nanoparticles with a core-shell structure coated on a temporary substrate …
FIG. 4a is a scanning electron microscope-cathodoluminescence (SEM-CL) image illustrating a central portion of a gallium nitride substrate, on which …
FIGS. 5 a to 5d are SEM images illustrating nanoparticles with a core-shell structure spin-coated using the method of fabricating a gallium nitride substrate …
FIG. 6b is an SEM image illustrating nanoparticles with a core-shell structure spin- coated and then thermally treated using a method of fabricating a gallium …
FIGS. 7a and 7b respectively illustrate enlarged optical microscope images of N-faces of a gallium nitride substrate allowed to grow without use of …
FIG. 8c is an image illustrating an edge face of a gallium nitride substrate allowed to grow using nanoparticles with a core-shell structure according to a …
FIG. 9a is an optical microscope i m age illustrating a surface of a sapphire substrate wherein growth of a gallium nitride substrate has been allowed without …
FIG. 10 a illustrates an SEM image of an interface of a gallium nitride substrate wherein growth of a gallium nitride substrate has been allowed without use of …
FIGS. 11e and 1l d respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. l b wherein coating with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, the method comprising: coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer; allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate; allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and SVG 15991464.08-08-2018.JKLKMYPCRXEAPX1.CLM.1.svg 0.16 2.32 Black and white wherein each of the nanoparticles with a core-shell structure comprises a core and an ionic polymer shell coated on a surface of the core surface.
The method according to claim 1, wherein a zeta potential of the nanoparticles with a core-shell structure is controlled by the shell.
The method according to claim 1, wherein the ionic polymer shell is made of a cationic polymer material, the cationic polymer material comprising at least one of poly(diallyldimethylammonium chloride) (PDDA), polyethyleneimine (P EI), polyaniline (PANI), polyallylamine hydrochloride (PAH), polyacrylamide (PAA), polyvinylimidazole, polyamidoamine (PAMAM), polymethacryloxyethyltrialkyl ammonium halide, polyallylamine chloride, aminoethylated polyacrylamide, polyvinylamine, Hoffman- degradated polyacrylamide, and polyethyleamine.
The method according to claim 1, wherein the ionic polymer shell is made of an anionic polymer material, the anionic polymer material comprising at least one of polyacrylic acid, polymethacrylic acid, polystyrene (PS), polysulfonic acid, a polyacrylamide/acrylic acid copolymer, a polyacrylic acid/sulfonic acid copolymer, a polysulfonic acid/acrylamide copolymer, a polyacrylic acid/malonic acid copolymer, and a polystyrene/acrylic acid copolymer.
The method according to claim 1, wherein the core comprises at least one of SiO 2, A₁ 2 0 3, TiO 2, ZrO 2, Cr O 2, W, Re, Mo, Cr, Co, Si, Au, Zr, Ta, Ti, Nb, Ni, Pt, V, Hf, Pd, BN, and nitrides of W, Re, Mo, Cr, Si, Zr, Ta, Ti, Nb, V, Hf and Fe.
The method according to claim 1, wherein, in the coating, spin coating is used.
The method according to claim 1, wherein, in the coating, allowing a buffer layer to grow on the temporary substrate is further comprised.
The method according to claim 1, wherein the temporary substrate comprises at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (I nP), and silicon carbide (SiC).
The method according to claim 1, wherein, in the separating, the temporary substrate is removed using laser lift-off (LLO).
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate fabricated via core-shell nanoparticle method
Materials described outside the worked examples.
pit gallium nitride (pit GaN) layer
GaN
nanoparticles with core-shell structure
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1I a and 1 l b respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. lb wherein coating with …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,373,825Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1I a and 1 l b respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. lb wherein coating with …
FIG. 2 is a graph illustrating a pH-dependent zeta potential change in nanopa r ticles with a core- shell structure manufactured by a method of fabricating a …
FIGS. 3a to 3c are scanning electron microscope (SEM) images illustrating nanoparticles with a core-shell structure coated on a temporary substrate …
FIG. 4a is a scanning electron microscope-cathodoluminescence (SEM-CL) image illustrating a central portion of a gallium nitride substrate, on which …
FIGS. 5 a to 5d are SEM images illustrating nanoparticles with a core-shell structure spin-coated using the method of fabricating a gallium nitride substrate …
FIG. 6b is an SEM image illustrating nanoparticles with a core-shell structure spin- coated and then thermally treated using a method of fabricating a gallium …
FIGS. 7a and 7b respectively illustrate enlarged optical microscope images of N-faces of a gallium nitride substrate allowed to grow without use of …
FIG. 8c is an image illustrating an edge face of a gallium nitride substrate allowed to grow using nanoparticles with a core-shell structure according to a …
FIG. 9a is an optical microscope i m age illustrating a surface of a sapphire substrate wherein growth of a gallium nitride substrate has been allowed without …
FIG. 10 a illustrates an SEM image of an interface of a gallium nitride substrate wherein growth of a gallium nitride substrate has been allowed without use of …
FIGS. 11e and 1l d respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. l b wherein coating with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, the method comprising: coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer; allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate; allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and SVG 15991464.08-08-2018.JKLKMYPCRXEAPX1.CLM.1.svg 0.16 2.32 Black and white wherein each of the nanoparticles with a core-shell structure comprises a core and an ionic polymer shell coated on a surface of the core surface.
The method according to claim 1, wherein a zeta potential of the nanoparticles with a core-shell structure is controlled by the shell.
The method according to claim 1, wherein the ionic polymer shell is made of a cationic polymer material, the cationic polymer material comprising at least one of poly(diallyldimethylammonium chloride) (PDDA), polyethyleneimine (P EI), polyaniline (PANI), polyallylamine hydrochloride (PAH), polyacrylamide (PAA), polyvinylimidazole, polyamidoamine (PAMAM), polymethacryloxyethyltrialkyl ammonium halide, polyallylamine chloride, aminoethylated polyacrylamide, polyvinylamine, Hoffman- degradated polyacrylamide, and polyethyleamine.
The method according to claim 1, wherein the ionic polymer shell is made of an anionic polymer material, the anionic polymer material comprising at least one of polyacrylic acid, polymethacrylic acid, polystyrene (PS), polysulfonic acid, a polyacrylamide/acrylic acid copolymer, a polyacrylic acid/sulfonic acid copolymer, a polysulfonic acid/acrylamide copolymer, a polyacrylic acid/malonic acid copolymer, and a polystyrene/acrylic acid copolymer.
The method according to claim 1, wherein the core comprises at least one of SiO 2, A₁ 2 0 3, TiO 2, ZrO 2, Cr O 2, W, Re, Mo, Cr, Co, Si, Au, Zr, Ta, Ti, Nb, Ni, Pt, V, Hf, Pd, BN, and nitrides of W, Re, Mo, Cr, Si, Zr, Ta, Ti, Nb, V, Hf and Fe.
The method according to claim 1, wherein, in the coating, spin coating is used.
The method according to claim 1, wherein, in the coating, allowing a buffer layer to grow on the temporary substrate is further comprised.
The method according to claim 1, wherein the temporary substrate comprises at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (I nP), and silicon carbide (SiC).
The method according to claim 1, wherein, in the separating, the temporary substrate is removed using laser lift-off (LLO).
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate fabricated via core-shell nanoparticle method
Materials described outside the worked examples.
pit gallium nitride (pit GaN) layer
GaN
nanoparticles with core-shell structure
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1I a and 1 l b respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. lb wherein coating with …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,373,825Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1I a and 1 l b respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. lb wherein coating with …
FIG. 2 is a graph illustrating a pH-dependent zeta potential change in nanopa r ticles with a core- shell structure manufactured by a method of fabricating a …
FIGS. 3a to 3c are scanning electron microscope (SEM) images illustrating nanoparticles with a core-shell structure coated on a temporary substrate …
FIG. 4a is a scanning electron microscope-cathodoluminescence (SEM-CL) image illustrating a central portion of a gallium nitride substrate, on which …
FIGS. 5 a to 5d are SEM images illustrating nanoparticles with a core-shell structure spin-coated using the method of fabricating a gallium nitride substrate …
FIG. 6b is an SEM image illustrating nanoparticles with a core-shell structure spin- coated and then thermally treated using a method of fabricating a gallium …
FIGS. 7a and 7b respectively illustrate enlarged optical microscope images of N-faces of a gallium nitride substrate allowed to grow without use of …
FIG. 8c is an image illustrating an edge face of a gallium nitride substrate allowed to grow using nanoparticles with a core-shell structure according to a …
FIG. 9a is an optical microscope i m age illustrating a surface of a sapphire substrate wherein growth of a gallium nitride substrate has been allowed without …
FIG. 10 a illustrates an SEM image of an interface of a gallium nitride substrate wherein growth of a gallium nitride substrate has been allowed without use of …
FIGS. 11e and 1l d respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. l b wherein coating with …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a gallium nitride substrate, the method comprising: coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer; allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate; allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and SVG 15991464.08-08-2018.JKLKMYPCRXEAPX1.CLM.1.svg 0.16 2.32 Black and white wherein each of the nanoparticles with a core-shell structure comprises a core and an ionic polymer shell coated on a surface of the core surface.
The method according to claim 1, wherein a zeta potential of the nanoparticles with a core-shell structure is controlled by the shell.
The method according to claim 1, wherein the ionic polymer shell is made of a cationic polymer material, the cationic polymer material comprising at least one of poly(diallyldimethylammonium chloride) (PDDA), polyethyleneimine (P EI), polyaniline (PANI), polyallylamine hydrochloride (PAH), polyacrylamide (PAA), polyvinylimidazole, polyamidoamine (PAMAM), polymethacryloxyethyltrialkyl ammonium halide, polyallylamine chloride, aminoethylated polyacrylamide, polyvinylamine, Hoffman- degradated polyacrylamide, and polyethyleamine.
The method according to claim 1, wherein the ionic polymer shell is made of an anionic polymer material, the anionic polymer material comprising at least one of polyacrylic acid, polymethacrylic acid, polystyrene (PS), polysulfonic acid, a polyacrylamide/acrylic acid copolymer, a polyacrylic acid/sulfonic acid copolymer, a polysulfonic acid/acrylamide copolymer, a polyacrylic acid/malonic acid copolymer, and a polystyrene/acrylic acid copolymer.
The method according to claim 1, wherein the core comprises at least one of SiO 2, A₁ 2 0 3, TiO 2, ZrO 2, Cr O 2, W, Re, Mo, Cr, Co, Si, Au, Zr, Ta, Ti, Nb, Ni, Pt, V, Hf, Pd, BN, and nitrides of W, Re, Mo, Cr, Si, Zr, Ta, Ti, Nb, V, Hf and Fe.
The method according to claim 1, wherein, in the coating, spin coating is used.
The method according to claim 1, wherein, in the coating, allowing a buffer layer to grow on the temporary substrate is further comprised.
The method according to claim 1, wherein the temporary substrate comprises at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (I nP), and silicon carbide (SiC).
The method according to claim 1, wherein, in the separating, the temporary substrate is removed using laser lift-off (LLO).
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate fabricated via core-shell nanoparticle method
Materials described outside the worked examples.
pit gallium nitride (pit GaN) layer
GaN
nanoparticles with core-shell structure
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 1I a and 1 l b respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. lb wherein coating with …
Related documents with shared materials, methods, properties, or citations.
cationic polymer shell material
anionic polymer shell material
nanoparticle core material
buffer layer
aluminum nitride buffer
AlN
aluminum gallium nitride buffer
AlGaN
temporary substrate
FIG. 2 is a graph illustrating a pH-dependent zeta potential change in nanopa r ticles with a core- shell structure manufactured by a method of fabricating a …
FIGS. 3a to 3c are scanning electron microscope (SEM) images illustrating nanoparticles with a core-shell structure coated on a temporary substrate …
FIG. 4a is a scanning electron microscope-cathodoluminescence (SEM-CL) image illustrating a central portion of a gallium nitride substrate, on which …
FIGS. 5 a to 5d are SEM images illustrating nanoparticles with a core-shell structure spin-coated using the method of fabricating a gallium nitride substrate …
FIG. 6b is an SEM image illustrating nanoparticles with a core-shell structure spin- coated and then thermally treated using a method of fabricating a gallium …
FIG. 10 a illustrates an SEM image of an interface of a gallium nitride substrate wherein growth of a gallium nitride substrate has been allowed without use of …
FIGS. 11e and 1l d respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. l b wherein coating with …
cationic polymer shell material
anionic polymer shell material
nanoparticle core material
buffer layer
aluminum nitride buffer
AlN
aluminum gallium nitride buffer
AlGaN
temporary substrate
FIG. 2 is a graph illustrating a pH-dependent zeta potential change in nanopa r ticles with a core- shell structure manufactured by a method of fabricating a …
FIGS. 3a to 3c are scanning electron microscope (SEM) images illustrating nanoparticles with a core-shell structure coated on a temporary substrate …
FIG. 4a is a scanning electron microscope-cathodoluminescence (SEM-CL) image illustrating a central portion of a gallium nitride substrate, on which …
FIGS. 5 a to 5d are SEM images illustrating nanoparticles with a core-shell structure spin-coated using the method of fabricating a gallium nitride substrate …
FIG. 6b is an SEM image illustrating nanoparticles with a core-shell structure spin- coated and then thermally treated using a method of fabricating a gallium …
FIG. 10 a illustrates an SEM image of an interface of a gallium nitride substrate wherein growth of a gallium nitride substrate has been allowed without use of …
FIGS. 11e and 1l d respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. l b wherein coating with …
cationic polymer shell material
anionic polymer shell material
nanoparticle core material
buffer layer
aluminum nitride buffer
AlN
aluminum gallium nitride buffer
AlGaN
temporary substrate
FIG. 2 is a graph illustrating a pH-dependent zeta potential change in nanopa r ticles with a core- shell structure manufactured by a method of fabricating a …
FIGS. 3a to 3c are scanning electron microscope (SEM) images illustrating nanoparticles with a core-shell structure coated on a temporary substrate …
FIG. 4a is a scanning electron microscope-cathodoluminescence (SEM-CL) image illustrating a central portion of a gallium nitride substrate, on which …
FIGS. 5 a to 5d are SEM images illustrating nanoparticles with a core-shell structure spin-coated using the method of fabricating a gallium nitride substrate …
FIG. 6b is an SEM image illustrating nanoparticles with a core-shell structure spin- coated and then thermally treated using a method of fabricating a gallium …
FIG. 10 a illustrates an SEM image of an interface of a gallium nitride substrate wherein growth of a gallium nitride substrate has been allowed without use of …
FIGS. 11e and 1l d respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. l b wherein coating with …
cationic polymer shell material
anionic polymer shell material
nanoparticle core material
buffer layer
aluminum nitride buffer
AlN
aluminum gallium nitride buffer
AlGaN
temporary substrate
FIG. 2 is a graph illustrating a pH-dependent zeta potential change in nanopa r ticles with a core- shell structure manufactured by a method of fabricating a …
FIGS. 3a to 3c are scanning electron microscope (SEM) images illustrating nanoparticles with a core-shell structure coated on a temporary substrate …
FIG. 4a is a scanning electron microscope-cathodoluminescence (SEM-CL) image illustrating a central portion of a gallium nitride substrate, on which …
FIGS. 5 a to 5d are SEM images illustrating nanoparticles with a core-shell structure spin-coated using the method of fabricating a gallium nitride substrate …
FIG. 6b is an SEM image illustrating nanoparticles with a core-shell structure spin- coated and then thermally treated using a method of fabricating a gallium …
FIG. 10 a illustrates an SEM image of an interface of a gallium nitride substrate wherein growth of a gallium nitride substrate has been allowed without use of …
FIGS. 11e and 1l d respectively illustrate SEM images of a central portion and edge portion of a temporary substrate of FIG. l b wherein coating with …