Patent
US 8,349,076OF THE INVENTION
In-Jae Song
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,349,076Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A-1 F illustrate a method of manufacturing gallium nitride (GaN) according to an embodiment of the present invention;
FIGS. 2A-2F illustrate a method of manufacturing GaN according to another embodiment of the present invention;
FIG. 3 is a representation of a scanning electron microscope (SEM) image of a porous GaN layer fabricated according to the method illustrated in FIGs. 2A-2F;
FIG. 4A is a representation of an SEM image of porous GaN/thick GaN layer fabricated according to the method illustrated in FIGs. 2A- 2F;
FIG. 5 is a representation of an image of a freestanding GaN substrate fabricated according to the method illustrated in FIGs. 2A-2F.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising: preparing a GaN substrate layer within a reactor; supplying HCI and NH₃ gases and N₂ carrier gas into the reactor and using the HCI and NH₃ gases to treat a surface of the GaN substrate layer and to form a porous GaN layer in the GaN substrate layer; forming a GaN crystal growth layer directly on the porous GaN layer; and naturally cooling the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and separating the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate-wherein the preparing of the GaN substrate layer comprises loading a semiconductor substrate into the reactor and forming the GaN substrate la y er on the semiconductor substrate.
The method of claim 1, wherein the forming of the porous GaN layer is performed at a temperature of 900 * C to 1,200 *C.
The method of claim 1, wherein the forming of the porous GaN 2 Application No. 11/545,518 layer and the forming of the GaN crystal growth layer are carried out at an elevated temperature and wherein the cooling is carried out by allowing the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed to cool naturally to room temperature.
The method of claim 1, wherein the reactor is a reactor of an HV PE (Hydride Vapor Phase Epitaxy) system.
(PREVOUSLY PRESENTED) The method of claim 1, wherein the HCI, NH₃ and N₂ gases are supplied into the reactor at 50 to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
The method of claim 1, wherein the porous GaN layer is formed by supplying H Cl and NH 3 gases such that GaN at the surface of the GaN substrate layer decomposes to generate and discharge Ga CI and H₂ gases to create voids on the surface of the GaN substrate layer.
The method of claim 1, wherein the preparing of a GaN substrate layer; the supplying to H CI and NH₃ gases to treat the surface of the GaN substrate layer, the forming of the porous GaN layer in the GaN substrate layer; the forming of the GaN crystal growth layer on the porous GaN layer; the cooling of the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and the separating of the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate are carried out in a single reactor.
The method of claim 1, wherein the cooling of the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed is carried out such that the porous GaN layer fractures to allow the GaN crystal growth layer to be separated.
The method.of claim 1, further including polishing the freestanding GaN substrate.
2.
The method of claim 21, wherein the semiconductor substrate is one of sapphire, S i C, and GaN substrates.
The method of claim 3, wherein the H CI, NH₃ and N₂ gases are supplied into the reactor at to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
8.
A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising: loading a-an untreated GaN wafer into a reactor; supplying H CI and NH₃ gases and N₂ carrier gas into the reactor and using the HCI and NH 3 gases to treat a surface of the GaN wafer and to form a porous GaN layer to a predetermined thickness at the surface of the GaN wafer; forming a GaN crystal growth layer directly on the porous GaN l ayer; and naturally cooling the GaN wafer on which the porous GaN layer and GaN crystal growth layer are formed such that the GaN crystal growth layer separates from the GaN wafer and GaN porous layer to provide the freestanding GaN substrate.
The method of claim 17, wherein the forming of the porous GaN layer is performed at a temperature of 900 0C to 1,200 0C.
The method of claim 17, wherein the reactor is a reactor of an 4 Application No. 11/545,518 HVPE (Hydride Vapor Phase Epitaxy) system.
The method of claim 17, wherein the forming of the porous GaN layer and the forming of the GaN crystal growth layer are carried out at an elevated temperature and wherein the cooling is carried out by allowing the GaN wafer on which the porous GaN layer and the GaN crystal growth layer are formed to cool naturally to room temperature.
The method of claim 17, wherein the H CI, NH₃ and N₂ gases are supplied into the reactor at 50 to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
The method of claim 17, wherein the porous GaN layer is formed by supplying H Cl and NH₃ gases such that GaN at the surface of the GaN substrate layer decomposes to generate and discharge Ga CI and H₂ gases to create voids on the surface of the GaN substrate layer.
The method of claim 17, wherein the preparing of a GaN substrate layer; the supplying to H CI and NH₃ gases to treat the surface of the GaN substrate layer, the forming of the porous GaN layer in the GaN substrate layer; the forming of the GaN crystal growth layer on the porous GaN l ayer; the cooling of the GaN substrate layer on which the porous GaN l ayer and the GaN crystal growth layer are formed and the separating of the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate are carried out in a single reactor.
The method of claim 17, wherein the cooling of the GaN wafer on which the porous GaN layer and the GaN crystal growth layer are formed is carried out such that the porous GaN layer fractures to allow the GaN crystal growth layer to be separated.
Layer stacks claimed or described, ordered top of device to substrate.
freestanding GaN substrate
Materials described outside the worked examples.
freestanding GaN substrate
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a representation of a scanning electron microscope (SEM) image of a porous GaN layer fabricated according to the method illustrated in FIGs. 2A-2F;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Porous GaN Layer Thickness | 8 um | GaN |
Flow Rate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,349,076Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A-1 F illustrate a method of manufacturing gallium nitride (GaN) according to an embodiment of the present invention;
FIGS. 2A-2F illustrate a method of manufacturing GaN according to another embodiment of the present invention;
FIG. 3 is a representation of a scanning electron microscope (SEM) image of a porous GaN layer fabricated according to the method illustrated in FIGs. 2A-2F;
FIG. 4A is a representation of an SEM image of porous GaN/thick GaN layer fabricated according to the method illustrated in FIGs. 2A- 2F;
FIG. 5 is a representation of an image of a freestanding GaN substrate fabricated according to the method illustrated in FIGs. 2A-2F.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising: preparing a GaN substrate layer within a reactor; supplying HCI and NH₃ gases and N₂ carrier gas into the reactor and using the HCI and NH₃ gases to treat a surface of the GaN substrate layer and to form a porous GaN layer in the GaN substrate layer; forming a GaN crystal growth layer directly on the porous GaN layer; and naturally cooling the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and separating the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate-wherein the preparing of the GaN substrate layer comprises loading a semiconductor substrate into the reactor and forming the GaN substrate la y er on the semiconductor substrate.
The method of claim 1, wherein the forming of the porous GaN layer is performed at a temperature of 900 * C to 1,200 *C.
The method of claim 1, wherein the forming of the porous GaN 2 Application No. 11/545,518 layer and the forming of the GaN crystal growth layer are carried out at an elevated temperature and wherein the cooling is carried out by allowing the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed to cool naturally to room temperature.
The method of claim 1, wherein the reactor is a reactor of an HV PE (Hydride Vapor Phase Epitaxy) system.
(PREVOUSLY PRESENTED) The method of claim 1, wherein the HCI, NH₃ and N₂ gases are supplied into the reactor at 50 to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
The method of claim 1, wherein the porous GaN layer is formed by supplying H Cl and NH 3 gases such that GaN at the surface of the GaN substrate layer decomposes to generate and discharge Ga CI and H₂ gases to create voids on the surface of the GaN substrate layer.
The method of claim 1, wherein the preparing of a GaN substrate layer; the supplying to H CI and NH₃ gases to treat the surface of the GaN substrate layer, the forming of the porous GaN layer in the GaN substrate layer; the forming of the GaN crystal growth layer on the porous GaN layer; the cooling of the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and the separating of the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate are carried out in a single reactor.
The method of claim 1, wherein the cooling of the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed is carried out such that the porous GaN layer fractures to allow the GaN crystal growth layer to be separated.
The method.of claim 1, further including polishing the freestanding GaN substrate.
2.
The method of claim 21, wherein the semiconductor substrate is one of sapphire, S i C, and GaN substrates.
The method of claim 3, wherein the H CI, NH₃ and N₂ gases are supplied into the reactor at to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
8.
A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising: loading a-an untreated GaN wafer into a reactor; supplying H CI and NH₃ gases and N₂ carrier gas into the reactor and using the HCI and NH 3 gases to treat a surface of the GaN wafer and to form a porous GaN layer to a predetermined thickness at the surface of the GaN wafer; forming a GaN crystal growth layer directly on the porous GaN l ayer; and naturally cooling the GaN wafer on which the porous GaN layer and GaN crystal growth layer are formed such that the GaN crystal growth layer separates from the GaN wafer and GaN porous layer to provide the freestanding GaN substrate.
The method of claim 17, wherein the forming of the porous GaN layer is performed at a temperature of 900 0C to 1,200 0C.
The method of claim 17, wherein the reactor is a reactor of an 4 Application No. 11/545,518 HVPE (Hydride Vapor Phase Epitaxy) system.
The method of claim 17, wherein the forming of the porous GaN layer and the forming of the GaN crystal growth layer are carried out at an elevated temperature and wherein the cooling is carried out by allowing the GaN wafer on which the porous GaN layer and the GaN crystal growth layer are formed to cool naturally to room temperature.
The method of claim 17, wherein the H CI, NH₃ and N₂ gases are supplied into the reactor at 50 to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
The method of claim 17, wherein the porous GaN layer is formed by supplying H Cl and NH₃ gases such that GaN at the surface of the GaN substrate layer decomposes to generate and discharge Ga CI and H₂ gases to create voids on the surface of the GaN substrate layer.
The method of claim 17, wherein the preparing of a GaN substrate layer; the supplying to H CI and NH₃ gases to treat the surface of the GaN substrate layer, the forming of the porous GaN layer in the GaN substrate layer; the forming of the GaN crystal growth layer on the porous GaN l ayer; the cooling of the GaN substrate layer on which the porous GaN l ayer and the GaN crystal growth layer are formed and the separating of the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate are carried out in a single reactor.
The method of claim 17, wherein the cooling of the GaN wafer on which the porous GaN layer and the GaN crystal growth layer are formed is carried out such that the porous GaN layer fractures to allow the GaN crystal growth layer to be separated.
Layer stacks claimed or described, ordered top of device to substrate.
freestanding GaN substrate
Materials described outside the worked examples.
freestanding GaN substrate
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a representation of a scanning electron microscope (SEM) image of a porous GaN layer fabricated according to the method illustrated in FIGs. 2A-2F;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Porous GaN Layer Thickness | 8 um | GaN |
Flow Rate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,349,076Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A-1 F illustrate a method of manufacturing gallium nitride (GaN) according to an embodiment of the present invention;
FIGS. 2A-2F illustrate a method of manufacturing GaN according to another embodiment of the present invention;
FIG. 3 is a representation of a scanning electron microscope (SEM) image of a porous GaN layer fabricated according to the method illustrated in FIGs. 2A-2F;
FIG. 4A is a representation of an SEM image of porous GaN/thick GaN layer fabricated according to the method illustrated in FIGs. 2A- 2F;
FIG. 5 is a representation of an image of a freestanding GaN substrate fabricated according to the method illustrated in FIGs. 2A-2F.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising: preparing a GaN substrate layer within a reactor; supplying HCI and NH₃ gases and N₂ carrier gas into the reactor and using the HCI and NH₃ gases to treat a surface of the GaN substrate layer and to form a porous GaN layer in the GaN substrate layer; forming a GaN crystal growth layer directly on the porous GaN layer; and naturally cooling the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and separating the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate-wherein the preparing of the GaN substrate layer comprises loading a semiconductor substrate into the reactor and forming the GaN substrate la y er on the semiconductor substrate.
The method of claim 1, wherein the forming of the porous GaN layer is performed at a temperature of 900 * C to 1,200 *C.
The method of claim 1, wherein the forming of the porous GaN 2 Application No. 11/545,518 layer and the forming of the GaN crystal growth layer are carried out at an elevated temperature and wherein the cooling is carried out by allowing the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed to cool naturally to room temperature.
The method of claim 1, wherein the reactor is a reactor of an HV PE (Hydride Vapor Phase Epitaxy) system.
(PREVOUSLY PRESENTED) The method of claim 1, wherein the HCI, NH₃ and N₂ gases are supplied into the reactor at 50 to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
The method of claim 1, wherein the porous GaN layer is formed by supplying H Cl and NH 3 gases such that GaN at the surface of the GaN substrate layer decomposes to generate and discharge Ga CI and H₂ gases to create voids on the surface of the GaN substrate layer.
The method of claim 1, wherein the preparing of a GaN substrate layer; the supplying to H CI and NH₃ gases to treat the surface of the GaN substrate layer, the forming of the porous GaN layer in the GaN substrate layer; the forming of the GaN crystal growth layer on the porous GaN layer; the cooling of the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and the separating of the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate are carried out in a single reactor.
The method of claim 1, wherein the cooling of the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed is carried out such that the porous GaN layer fractures to allow the GaN crystal growth layer to be separated.
The method.of claim 1, further including polishing the freestanding GaN substrate.
2.
The method of claim 21, wherein the semiconductor substrate is one of sapphire, S i C, and GaN substrates.
The method of claim 3, wherein the H CI, NH₃ and N₂ gases are supplied into the reactor at to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
8.
A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising: loading a-an untreated GaN wafer into a reactor; supplying H CI and NH₃ gases and N₂ carrier gas into the reactor and using the HCI and NH 3 gases to treat a surface of the GaN wafer and to form a porous GaN layer to a predetermined thickness at the surface of the GaN wafer; forming a GaN crystal growth layer directly on the porous GaN l ayer; and naturally cooling the GaN wafer on which the porous GaN layer and GaN crystal growth layer are formed such that the GaN crystal growth layer separates from the GaN wafer and GaN porous layer to provide the freestanding GaN substrate.
The method of claim 17, wherein the forming of the porous GaN layer is performed at a temperature of 900 0C to 1,200 0C.
The method of claim 17, wherein the reactor is a reactor of an 4 Application No. 11/545,518 HVPE (Hydride Vapor Phase Epitaxy) system.
The method of claim 17, wherein the forming of the porous GaN layer and the forming of the GaN crystal growth layer are carried out at an elevated temperature and wherein the cooling is carried out by allowing the GaN wafer on which the porous GaN layer and the GaN crystal growth layer are formed to cool naturally to room temperature.
The method of claim 17, wherein the H CI, NH₃ and N₂ gases are supplied into the reactor at 50 to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
The method of claim 17, wherein the porous GaN layer is formed by supplying H Cl and NH₃ gases such that GaN at the surface of the GaN substrate layer decomposes to generate and discharge Ga CI and H₂ gases to create voids on the surface of the GaN substrate layer.
The method of claim 17, wherein the preparing of a GaN substrate layer; the supplying to H CI and NH₃ gases to treat the surface of the GaN substrate layer, the forming of the porous GaN layer in the GaN substrate layer; the forming of the GaN crystal growth layer on the porous GaN l ayer; the cooling of the GaN substrate layer on which the porous GaN l ayer and the GaN crystal growth layer are formed and the separating of the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate are carried out in a single reactor.
The method of claim 17, wherein the cooling of the GaN wafer on which the porous GaN layer and the GaN crystal growth layer are formed is carried out such that the porous GaN layer fractures to allow the GaN crystal growth layer to be separated.
Layer stacks claimed or described, ordered top of device to substrate.
freestanding GaN substrate
Materials described outside the worked examples.
freestanding GaN substrate
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a representation of a scanning electron microscope (SEM) image of a porous GaN layer fabricated according to the method illustrated in FIGs. 2A-2F;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Porous GaN Layer Thickness | 8 um | GaN |
Flow Rate |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,349,076Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A-1 F illustrate a method of manufacturing gallium nitride (GaN) according to an embodiment of the present invention;
FIGS. 2A-2F illustrate a method of manufacturing GaN according to another embodiment of the present invention;
FIG. 3 is a representation of a scanning electron microscope (SEM) image of a porous GaN layer fabricated according to the method illustrated in FIGs. 2A-2F;
FIG. 4A is a representation of an SEM image of porous GaN/thick GaN layer fabricated according to the method illustrated in FIGs. 2A- 2F;
FIG. 5 is a representation of an image of a freestanding GaN substrate fabricated according to the method illustrated in FIGs. 2A-2F.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising: preparing a GaN substrate layer within a reactor; supplying HCI and NH₃ gases and N₂ carrier gas into the reactor and using the HCI and NH₃ gases to treat a surface of the GaN substrate layer and to form a porous GaN layer in the GaN substrate layer; forming a GaN crystal growth layer directly on the porous GaN layer; and naturally cooling the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and separating the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate-wherein the preparing of the GaN substrate layer comprises loading a semiconductor substrate into the reactor and forming the GaN substrate la y er on the semiconductor substrate.
The method of claim 1, wherein the forming of the porous GaN layer is performed at a temperature of 900 * C to 1,200 *C.
The method of claim 1, wherein the forming of the porous GaN 2 Application No. 11/545,518 layer and the forming of the GaN crystal growth layer are carried out at an elevated temperature and wherein the cooling is carried out by allowing the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed to cool naturally to room temperature.
The method of claim 1, wherein the reactor is a reactor of an HV PE (Hydride Vapor Phase Epitaxy) system.
(PREVOUSLY PRESENTED) The method of claim 1, wherein the HCI, NH₃ and N₂ gases are supplied into the reactor at 50 to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
The method of claim 1, wherein the porous GaN layer is formed by supplying H Cl and NH 3 gases such that GaN at the surface of the GaN substrate layer decomposes to generate and discharge Ga CI and H₂ gases to create voids on the surface of the GaN substrate layer.
The method of claim 1, wherein the preparing of a GaN substrate layer; the supplying to H CI and NH₃ gases to treat the surface of the GaN substrate layer, the forming of the porous GaN layer in the GaN substrate layer; the forming of the GaN crystal growth layer on the porous GaN layer; the cooling of the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed and the separating of the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate are carried out in a single reactor.
The method of claim 1, wherein the cooling of the GaN substrate layer on which the porous GaN layer and the GaN crystal growth layer are formed is carried out such that the porous GaN layer fractures to allow the GaN crystal growth layer to be separated.
The method.of claim 1, further including polishing the freestanding GaN substrate.
2.
The method of claim 21, wherein the semiconductor substrate is one of sapphire, S i C, and GaN substrates.
The method of claim 3, wherein the H CI, NH₃ and N₂ gases are supplied into the reactor at to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
8.
A method of fabricating a freestanding gallium nitride (GaN) substrate, the method comprising: loading a-an untreated GaN wafer into a reactor; supplying H CI and NH₃ gases and N₂ carrier gas into the reactor and using the HCI and NH 3 gases to treat a surface of the GaN wafer and to form a porous GaN layer to a predetermined thickness at the surface of the GaN wafer; forming a GaN crystal growth layer directly on the porous GaN l ayer; and naturally cooling the GaN wafer on which the porous GaN layer and GaN crystal growth layer are formed such that the GaN crystal growth layer separates from the GaN wafer and GaN porous layer to provide the freestanding GaN substrate.
The method of claim 17, wherein the forming of the porous GaN layer is performed at a temperature of 900 0C to 1,200 0C.
The method of claim 17, wherein the reactor is a reactor of an 4 Application No. 11/545,518 HVPE (Hydride Vapor Phase Epitaxy) system.
The method of claim 17, wherein the forming of the porous GaN layer and the forming of the GaN crystal growth layer are carried out at an elevated temperature and wherein the cooling is carried out by allowing the GaN wafer on which the porous GaN layer and the GaN crystal growth layer are formed to cool naturally to room temperature.
The method of claim 17, wherein the H CI, NH₃ and N₂ gases are supplied into the reactor at 50 to 150 sccm, 500 to 1,500 sccm, and 8,000 sccm, respectively, at atmospheric pressure.
The method of claim 17, wherein the porous GaN layer is formed by supplying H Cl and NH₃ gases such that GaN at the surface of the GaN substrate layer decomposes to generate and discharge Ga CI and H₂ gases to create voids on the surface of the GaN substrate layer.
The method of claim 17, wherein the preparing of a GaN substrate layer; the supplying to H CI and NH₃ gases to treat the surface of the GaN substrate layer, the forming of the porous GaN layer in the GaN substrate layer; the forming of the GaN crystal growth layer on the porous GaN l ayer; the cooling of the GaN substrate layer on which the porous GaN l ayer and the GaN crystal growth layer are formed and the separating of the GaN crystal growth layer from the GaN substrate layer and GaN porous layer to provide the freestanding GaN substrate are carried out in a single reactor.
The method of claim 17, wherein the cooling of the GaN wafer on which the porous GaN layer and the GaN crystal growth layer are formed is carried out such that the porous GaN layer fractures to allow the GaN crystal growth layer to be separated.
Layer stacks claimed or described, ordered top of device to substrate.
freestanding GaN substrate
Materials described outside the worked examples.
freestanding GaN substrate
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a representation of a scanning electron microscope (SEM) image of a porous GaN layer fabricated according to the method illustrated in FIGs. 2A-2F;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Porous GaN Layer Thickness | 8 um | GaN |
Flow Rate |
Related documents with shared materials, methods, properties, or citations.
SiC substrate
SiC
FIG. 4A is a representation of an SEM image of porous GaN/thick GaN layer fabricated according to the method illustrated in FIGs. 2A- 2F;
| 50–150 sccm |
| — |
Flow Rate | 500–1500 sccm | — |
SiC substrate
SiC
FIG. 4A is a representation of an SEM image of porous GaN/thick GaN layer fabricated according to the method illustrated in FIGs. 2A- 2F;
| 50–150 sccm |
| — |
Flow Rate | 500–1500 sccm | — |
SiC substrate
SiC
FIG. 4A is a representation of an SEM image of porous GaN/thick GaN layer fabricated according to the method illustrated in FIGs. 2A- 2F;
| 50–150 sccm |
| — |
Flow Rate | 500–1500 sccm | — |
SiC substrate
SiC
FIG. 4A is a representation of an SEM image of porous GaN/thick GaN layer fabricated according to the method illustrated in FIGs. 2A- 2F;
| 50–150 sccm |
| — |
Flow Rate | 500–1500 sccm | — |