GALLIUM NITRIDE TRANSISTOR

LEADLESS ELECTRONIC PACKAGES FOR GAN DEVICES

DEVICE AND SEMICONDUCTOR STRUCTURE FOR IMPROVING THE DISADVANTAGES OF P-GAN GATE HIGH ELECTRON MOBILITY TRANSISTOR

INTEGRATED GALLIUM NITRIDE POWER AMPLIFIER AND SWITCH

Gallium Nitride High Electron Mobility Transistors (HEMTs) Having Reduced Current Collapse And Power Added Efficiency Enhancement

Leakage barrier for GaN based HEMT active device

DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR

GUARD RINGS FOR CASCODE GALLIUM NITRIDE DEVICES

GAN-BASED DEVICE CASCODED WITH AN INTEGRATED FET/SCHOTTKY DIODE DEVICE

GALLIUM NITRIDE (GaN) TRANSISTOR STRUCTURES ON A SUBSTRATE

GALLIUM NITRIDE TRANSISTOR

LEADLESS ELECTRONIC PACKAGES FOR GAN DEVICES

DEVICE AND SEMICONDUCTOR STRUCTURE FOR IMPROVING THE DISADVANTAGES OF P-GAN GATE HIGH ELECTRON MOBILITY TRANSISTOR

INTEGRATED GALLIUM NITRIDE POWER AMPLIFIER AND SWITCH

Gallium Nitride High Electron Mobility Transistors (HEMTs) Having Reduced Current Collapse And Power Added Efficiency Enhancement

Leakage barrier for GaN based HEMT active device

DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR

GUARD RINGS FOR CASCODE GALLIUM NITRIDE DEVICES

GAN-BASED DEVICE CASCODED WITH AN INTEGRATED FET/SCHOTTKY DIODE DEVICE

GALLIUM NITRIDE (GaN) TRANSISTOR STRUCTURES ON A SUBSTRATE

GALLIUM NITRIDE TRANSISTOR

LEADLESS ELECTRONIC PACKAGES FOR GAN DEVICES

DEVICE AND SEMICONDUCTOR STRUCTURE FOR IMPROVING THE DISADVANTAGES OF P-GAN GATE HIGH ELECTRON MOBILITY TRANSISTOR

INTEGRATED GALLIUM NITRIDE POWER AMPLIFIER AND SWITCH

Gallium Nitride High Electron Mobility Transistors (HEMTs) Having Reduced Current Collapse And Power Added Efficiency Enhancement

Leakage barrier for GaN based HEMT active device

DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR

GUARD RINGS FOR CASCODE GALLIUM NITRIDE DEVICES

GAN-BASED DEVICE CASCODED WITH AN INTEGRATED FET/SCHOTTKY DIODE DEVICE

GALLIUM NITRIDE (GaN) TRANSISTOR STRUCTURES ON A SUBSTRATE

GALLIUM NITRIDE TRANSISTOR

LEADLESS ELECTRONIC PACKAGES FOR GAN DEVICES

DEVICE AND SEMICONDUCTOR STRUCTURE FOR IMPROVING THE DISADVANTAGES OF P-GAN GATE HIGH ELECTRON MOBILITY TRANSISTOR

INTEGRATED GALLIUM NITRIDE POWER AMPLIFIER AND SWITCH

Gallium Nitride High Electron Mobility Transistors (HEMTs) Having Reduced Current Collapse And Power Added Efficiency Enhancement

Leakage barrier for GaN based HEMT active device

DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR

GUARD RINGS FOR CASCODE GALLIUM NITRIDE DEVICES

GAN-BASED DEVICE CASCODED WITH AN INTEGRATED FET/SCHOTTKY DIODE DEVICE

GALLIUM NITRIDE (GaN) TRANSISTOR STRUCTURES ON A SUBSTRATE