Patent
Atlas literature
Patent
US 12,046,594 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a traditional GaN- based half-bridge circuit.
FIG. 2 shows a schematic plan view of the traditional GaN-based half-bridge circuit.
FIG. 3 shows a schematic plan view of the traditional GaN-based half-bridge circuit along a barrier layer 15.
FIG. 4 shows a longitudinally expanded view of the 5 traditional GaN-based half-bridge circuit (all parts are placed on the same straight line, which is not …
FIG. 5 shows a schematic diagram of a bridge circuit according to the present invention. 10
FIG. 6 shows a longitudinally expanded view of a mono- lithically integrated GaN-based half-bridge circuit according to Embodiment 1 of the present invention …
FIG. 7.
FIG. 8 shows a schematic plan view of the monolithically integrated GaN-based half-bridge circuit according to 20 Embodiment 1 of the present invention along a …
FIG. 9 shows a schematic longitudinal structural view taken along line A' in
FIG. 10 shows a schematic longitudinal structural view 25 taken along line B B' in
FIG. 11.
FIG. 12 shows a schematic plan view of the monolithi- 30 cally integrated GaN-based half-bridge circuit according to Embodiment 2 of the present invention …
FIG. 13 shows a schematic longitudinal structural view taken along line A" in
FIG. 14 shows a schematic longitudinal structural view taken along line B B" in
FIG. 15 shows a schematic longitudinal structural view taken along line C C" in
FIG. 16 shows a schematic diagram of a two-dimensional 40 electron gas integrated resistor.
FIG. 17 shows a schematic diagram of a groove-type high-resistance two-dimensional electron gas integrated resistor.
FIG. 18 shows a schematic diagram of a thinned P-GaN 45 type high-resistance two-dimensional electron gas inte- grated resistor.
FIG. 19 shows a schematic diagram of a high-resistance two-dimensional hole gas integrated resistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithically integrated GaN-based half-bridge circuit, comprising: a base, the base comprising a conductive substrate, a nucleation layer, a buffer layer, a channel layer and a barrier layer being sequentially provided on the conductive substrate, and an oxide passivation layer being provided on the barrier layer, wherein the base further comprises isolation layers, the isolation layers start from a surface of the barrier layer, pass through the barrier layer and the channel layer before entering the buffer layer, the barrier layer and the channel layer are divided by the isolation layers to form a diode capacitor region, a low-side transistor region, a high-side transistor region, a first resistor region and a second resistor region, a diode and an integrated capacitor are arranged on the diode capacitor region, and a low-side transistor, a high-side transistor, a first integrated resistor and a second integrated resistor are respectively arranged on the low-side transistor region, the high-side transistor region, the first resistor region and the second resistor region; the diode comprises a source metal connected to an upper surface of the barrier layer in the diode capacitor region, a first P-GaN layer, and a cathode metal that also serves as a plate of the integrated capacitor, wherein a gate metal is provided on the first P-GaN layer, and the source metal is connected to the gate metal and serves as an anode of the diode; a ground metal serving as another plate of the integrated capaci-tor is provided on a surface of the oxide passivation layer; the low-side transistor comprises a low-side transistor source metal connected to the upper surface of the barrier layer in the low-side transistor region, a second P-GaN layer, and a low-side transistor drain metal, wherein a low-side transistor gate metal is provided on the second P-GaN layer; the high-side transistor comprises a high-side transistor source metal connected to the upper surface of the barrier layer in the high-side transistor region and connected to the low-side transistor drain metal and the anode of the diode, a third P-GaN layer, and a high-side transistor drain metal, wherein a high-side transistor gate metal is provided on the third P-GaN layer; the first integrated resistor and the second integrated resistor are connected in series at a series node that is connected to the conductive substrate, one end of series connection of the first integrated resistor and the second integrated resistor is connected to the high-side tran-sistor drain metal, and the other end of the series connection of the first integrated resistor and the second integrated resistor is connected to the ground metal.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a first substrate through-hole metal is formed in the diode capacitor region, the first substrate through-hole metal is connected to the cathode metal, and the first substrate through-hole metal extends and is connected to the conductive substrate; a second substrate through-hole metal is formed in the first resistor region or the second resistor region, the second substrate through-hole metal is connected to the series node of the first integrated resistor and the second integrated resistor and extends to be connected to the conductive substrate; the first substrate through-hole metal and the diode capacitor region are located on one side of the barrier layer, and the second substrate through-hole metal, the first resistor region and the second resistor region are located on the other side of the barrier layer.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a first substrate through-hole metal is formed in the barrier layer, and the first substrate through-hole metal extends and is connected to the conductive substrate, the first substrate through-hole metal is connected to the cathode metal and the series node of the first integrated resistor and the second integrated resistor respectively, and the anode of the diode is connected to the high-side transistor source metal through an anode metal and is connected to an output terminal Vout; the first substrate through-hole metal, the cathode metal, the anode metal and the output terminal Vout are located in a middle part of the GaN-based half-bridge circuit, the first integrated resistor and the second integrated resistor are respectively located on both sides of the middle part, and the low-side transistor and the high-side transistor are respectively located on both sides of the middle part.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a silicon dielectric layer is provided between the plate and the another plate of the integrated capacitor.
A half-bridge circuit, comprising: a low-side transistor and a high-side transistor, a drain of the low-side transistor being connected to a source of the high-side transistor and also connected to an output terminal Vout, and a substrate of the low-side transistor being connected to a substrate of the high-side transistor, wherein a series resistor is connected in parallel to a high-side transistor drain metal and a low-side transistor source metal, and the series resistor is composed of a first integrated resistor and a second integrated resistor connected in series at a series node that is connected to a conductive substrate; an integrated capacitor is connected in parallel to the series node and the low-side transistor source metal; a diode is connected between the output terminal Vout and the series node, and the diode has an anode connected to the output terminal Vout and a cathode connected to the series node.
The half-bridge circuit according to claim 7, wherein the low-side transistor and the high-side transistor are GaN HEMT devices. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithically integrated GaN-based half-bridge circuit
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
nucleation layer
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
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Patent
Atlas literature
Patent
US 12,046,594 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a traditional GaN- based half-bridge circuit.
FIG. 2 shows a schematic plan view of the traditional GaN-based half-bridge circuit.
FIG. 3 shows a schematic plan view of the traditional GaN-based half-bridge circuit along a barrier layer 15.
FIG. 4 shows a longitudinally expanded view of the 5 traditional GaN-based half-bridge circuit (all parts are placed on the same straight line, which is not …
FIG. 5 shows a schematic diagram of a bridge circuit according to the present invention. 10
FIG. 6 shows a longitudinally expanded view of a mono- lithically integrated GaN-based half-bridge circuit according to Embodiment 1 of the present invention …
FIG. 7.
FIG. 8 shows a schematic plan view of the monolithically integrated GaN-based half-bridge circuit according to 20 Embodiment 1 of the present invention along a …
FIG. 9 shows a schematic longitudinal structural view taken along line A' in
FIG. 10 shows a schematic longitudinal structural view 25 taken along line B B' in
FIG. 11.
FIG. 12 shows a schematic plan view of the monolithi- 30 cally integrated GaN-based half-bridge circuit according to Embodiment 2 of the present invention …
FIG. 13 shows a schematic longitudinal structural view taken along line A" in
FIG. 14 shows a schematic longitudinal structural view taken along line B B" in
FIG. 15 shows a schematic longitudinal structural view taken along line C C" in
FIG. 16 shows a schematic diagram of a two-dimensional 40 electron gas integrated resistor.
FIG. 17 shows a schematic diagram of a groove-type high-resistance two-dimensional electron gas integrated resistor.
FIG. 18 shows a schematic diagram of a thinned P-GaN 45 type high-resistance two-dimensional electron gas inte- grated resistor.
FIG. 19 shows a schematic diagram of a high-resistance two-dimensional hole gas integrated resistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithically integrated GaN-based half-bridge circuit, comprising: a base, the base comprising a conductive substrate, a nucleation layer, a buffer layer, a channel layer and a barrier layer being sequentially provided on the conductive substrate, and an oxide passivation layer being provided on the barrier layer, wherein the base further comprises isolation layers, the isolation layers start from a surface of the barrier layer, pass through the barrier layer and the channel layer before entering the buffer layer, the barrier layer and the channel layer are divided by the isolation layers to form a diode capacitor region, a low-side transistor region, a high-side transistor region, a first resistor region and a second resistor region, a diode and an integrated capacitor are arranged on the diode capacitor region, and a low-side transistor, a high-side transistor, a first integrated resistor and a second integrated resistor are respectively arranged on the low-side transistor region, the high-side transistor region, the first resistor region and the second resistor region; the diode comprises a source metal connected to an upper surface of the barrier layer in the diode capacitor region, a first P-GaN layer, and a cathode metal that also serves as a plate of the integrated capacitor, wherein a gate metal is provided on the first P-GaN layer, and the source metal is connected to the gate metal and serves as an anode of the diode; a ground metal serving as another plate of the integrated capaci-tor is provided on a surface of the oxide passivation layer; the low-side transistor comprises a low-side transistor source metal connected to the upper surface of the barrier layer in the low-side transistor region, a second P-GaN layer, and a low-side transistor drain metal, wherein a low-side transistor gate metal is provided on the second P-GaN layer; the high-side transistor comprises a high-side transistor source metal connected to the upper surface of the barrier layer in the high-side transistor region and connected to the low-side transistor drain metal and the anode of the diode, a third P-GaN layer, and a high-side transistor drain metal, wherein a high-side transistor gate metal is provided on the third P-GaN layer; the first integrated resistor and the second integrated resistor are connected in series at a series node that is connected to the conductive substrate, one end of series connection of the first integrated resistor and the second integrated resistor is connected to the high-side tran-sistor drain metal, and the other end of the series connection of the first integrated resistor and the second integrated resistor is connected to the ground metal.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a first substrate through-hole metal is formed in the diode capacitor region, the first substrate through-hole metal is connected to the cathode metal, and the first substrate through-hole metal extends and is connected to the conductive substrate; a second substrate through-hole metal is formed in the first resistor region or the second resistor region, the second substrate through-hole metal is connected to the series node of the first integrated resistor and the second integrated resistor and extends to be connected to the conductive substrate; the first substrate through-hole metal and the diode capacitor region are located on one side of the barrier layer, and the second substrate through-hole metal, the first resistor region and the second resistor region are located on the other side of the barrier layer.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a first substrate through-hole metal is formed in the barrier layer, and the first substrate through-hole metal extends and is connected to the conductive substrate, the first substrate through-hole metal is connected to the cathode metal and the series node of the first integrated resistor and the second integrated resistor respectively, and the anode of the diode is connected to the high-side transistor source metal through an anode metal and is connected to an output terminal Vout; the first substrate through-hole metal, the cathode metal, the anode metal and the output terminal Vout are located in a middle part of the GaN-based half-bridge circuit, the first integrated resistor and the second integrated resistor are respectively located on both sides of the middle part, and the low-side transistor and the high-side transistor are respectively located on both sides of the middle part.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a silicon dielectric layer is provided between the plate and the another plate of the integrated capacitor.
A half-bridge circuit, comprising: a low-side transistor and a high-side transistor, a drain of the low-side transistor being connected to a source of the high-side transistor and also connected to an output terminal Vout, and a substrate of the low-side transistor being connected to a substrate of the high-side transistor, wherein a series resistor is connected in parallel to a high-side transistor drain metal and a low-side transistor source metal, and the series resistor is composed of a first integrated resistor and a second integrated resistor connected in series at a series node that is connected to a conductive substrate; an integrated capacitor is connected in parallel to the series node and the low-side transistor source metal; a diode is connected between the output terminal Vout and the series node, and the diode has an anode connected to the output terminal Vout and a cathode connected to the series node.
The half-bridge circuit according to claim 7, wherein the low-side transistor and the high-side transistor are GaN HEMT devices. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithically integrated GaN-based half-bridge circuit
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
nucleation layer
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,046,594 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a traditional GaN- based half-bridge circuit.
FIG. 2 shows a schematic plan view of the traditional GaN-based half-bridge circuit.
FIG. 3 shows a schematic plan view of the traditional GaN-based half-bridge circuit along a barrier layer 15.
FIG. 4 shows a longitudinally expanded view of the 5 traditional GaN-based half-bridge circuit (all parts are placed on the same straight line, which is not …
FIG. 5 shows a schematic diagram of a bridge circuit according to the present invention. 10
FIG. 6 shows a longitudinally expanded view of a mono- lithically integrated GaN-based half-bridge circuit according to Embodiment 1 of the present invention …
FIG. 7.
FIG. 8 shows a schematic plan view of the monolithically integrated GaN-based half-bridge circuit according to 20 Embodiment 1 of the present invention along a …
FIG. 9 shows a schematic longitudinal structural view taken along line A' in
FIG. 10 shows a schematic longitudinal structural view 25 taken along line B B' in
FIG. 11.
FIG. 12 shows a schematic plan view of the monolithi- 30 cally integrated GaN-based half-bridge circuit according to Embodiment 2 of the present invention …
FIG. 13 shows a schematic longitudinal structural view taken along line A" in
FIG. 14 shows a schematic longitudinal structural view taken along line B B" in
FIG. 15 shows a schematic longitudinal structural view taken along line C C" in
FIG. 16 shows a schematic diagram of a two-dimensional 40 electron gas integrated resistor.
FIG. 17 shows a schematic diagram of a groove-type high-resistance two-dimensional electron gas integrated resistor.
FIG. 18 shows a schematic diagram of a thinned P-GaN 45 type high-resistance two-dimensional electron gas inte- grated resistor.
FIG. 19 shows a schematic diagram of a high-resistance two-dimensional hole gas integrated resistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithically integrated GaN-based half-bridge circuit, comprising: a base, the base comprising a conductive substrate, a nucleation layer, a buffer layer, a channel layer and a barrier layer being sequentially provided on the conductive substrate, and an oxide passivation layer being provided on the barrier layer, wherein the base further comprises isolation layers, the isolation layers start from a surface of the barrier layer, pass through the barrier layer and the channel layer before entering the buffer layer, the barrier layer and the channel layer are divided by the isolation layers to form a diode capacitor region, a low-side transistor region, a high-side transistor region, a first resistor region and a second resistor region, a diode and an integrated capacitor are arranged on the diode capacitor region, and a low-side transistor, a high-side transistor, a first integrated resistor and a second integrated resistor are respectively arranged on the low-side transistor region, the high-side transistor region, the first resistor region and the second resistor region; the diode comprises a source metal connected to an upper surface of the barrier layer in the diode capacitor region, a first P-GaN layer, and a cathode metal that also serves as a plate of the integrated capacitor, wherein a gate metal is provided on the first P-GaN layer, and the source metal is connected to the gate metal and serves as an anode of the diode; a ground metal serving as another plate of the integrated capaci-tor is provided on a surface of the oxide passivation layer; the low-side transistor comprises a low-side transistor source metal connected to the upper surface of the barrier layer in the low-side transistor region, a second P-GaN layer, and a low-side transistor drain metal, wherein a low-side transistor gate metal is provided on the second P-GaN layer; the high-side transistor comprises a high-side transistor source metal connected to the upper surface of the barrier layer in the high-side transistor region and connected to the low-side transistor drain metal and the anode of the diode, a third P-GaN layer, and a high-side transistor drain metal, wherein a high-side transistor gate metal is provided on the third P-GaN layer; the first integrated resistor and the second integrated resistor are connected in series at a series node that is connected to the conductive substrate, one end of series connection of the first integrated resistor and the second integrated resistor is connected to the high-side tran-sistor drain metal, and the other end of the series connection of the first integrated resistor and the second integrated resistor is connected to the ground metal.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a first substrate through-hole metal is formed in the diode capacitor region, the first substrate through-hole metal is connected to the cathode metal, and the first substrate through-hole metal extends and is connected to the conductive substrate; a second substrate through-hole metal is formed in the first resistor region or the second resistor region, the second substrate through-hole metal is connected to the series node of the first integrated resistor and the second integrated resistor and extends to be connected to the conductive substrate; the first substrate through-hole metal and the diode capacitor region are located on one side of the barrier layer, and the second substrate through-hole metal, the first resistor region and the second resistor region are located on the other side of the barrier layer.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a first substrate through-hole metal is formed in the barrier layer, and the first substrate through-hole metal extends and is connected to the conductive substrate, the first substrate through-hole metal is connected to the cathode metal and the series node of the first integrated resistor and the second integrated resistor respectively, and the anode of the diode is connected to the high-side transistor source metal through an anode metal and is connected to an output terminal Vout; the first substrate through-hole metal, the cathode metal, the anode metal and the output terminal Vout are located in a middle part of the GaN-based half-bridge circuit, the first integrated resistor and the second integrated resistor are respectively located on both sides of the middle part, and the low-side transistor and the high-side transistor are respectively located on both sides of the middle part.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a silicon dielectric layer is provided between the plate and the another plate of the integrated capacitor.
A half-bridge circuit, comprising: a low-side transistor and a high-side transistor, a drain of the low-side transistor being connected to a source of the high-side transistor and also connected to an output terminal Vout, and a substrate of the low-side transistor being connected to a substrate of the high-side transistor, wherein a series resistor is connected in parallel to a high-side transistor drain metal and a low-side transistor source metal, and the series resistor is composed of a first integrated resistor and a second integrated resistor connected in series at a series node that is connected to a conductive substrate; an integrated capacitor is connected in parallel to the series node and the low-side transistor source metal; a diode is connected between the output terminal Vout and the series node, and the diode has an anode connected to the output terminal Vout and a cathode connected to the series node.
The half-bridge circuit according to claim 7, wherein the low-side transistor and the high-side transistor are GaN HEMT devices. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithically integrated GaN-based half-bridge circuit
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
nucleation layer
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,046,594 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a traditional GaN- based half-bridge circuit.
FIG. 2 shows a schematic plan view of the traditional GaN-based half-bridge circuit.
FIG. 3 shows a schematic plan view of the traditional GaN-based half-bridge circuit along a barrier layer 15.
FIG. 4 shows a longitudinally expanded view of the 5 traditional GaN-based half-bridge circuit (all parts are placed on the same straight line, which is not …
FIG. 5 shows a schematic diagram of a bridge circuit according to the present invention. 10
FIG. 6 shows a longitudinally expanded view of a mono- lithically integrated GaN-based half-bridge circuit according to Embodiment 1 of the present invention …
FIG. 7.
FIG. 8 shows a schematic plan view of the monolithically integrated GaN-based half-bridge circuit according to 20 Embodiment 1 of the present invention along a …
FIG. 9 shows a schematic longitudinal structural view taken along line A' in
FIG. 10 shows a schematic longitudinal structural view 25 taken along line B B' in
FIG. 11.
FIG. 12 shows a schematic plan view of the monolithi- 30 cally integrated GaN-based half-bridge circuit according to Embodiment 2 of the present invention …
FIG. 13 shows a schematic longitudinal structural view taken along line A" in
FIG. 14 shows a schematic longitudinal structural view taken along line B B" in
FIG. 15 shows a schematic longitudinal structural view taken along line C C" in
FIG. 16 shows a schematic diagram of a two-dimensional 40 electron gas integrated resistor.
FIG. 17 shows a schematic diagram of a groove-type high-resistance two-dimensional electron gas integrated resistor.
FIG. 18 shows a schematic diagram of a thinned P-GaN 45 type high-resistance two-dimensional electron gas inte- grated resistor.
FIG. 19 shows a schematic diagram of a high-resistance two-dimensional hole gas integrated resistor.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithically integrated GaN-based half-bridge circuit, comprising: a base, the base comprising a conductive substrate, a nucleation layer, a buffer layer, a channel layer and a barrier layer being sequentially provided on the conductive substrate, and an oxide passivation layer being provided on the barrier layer, wherein the base further comprises isolation layers, the isolation layers start from a surface of the barrier layer, pass through the barrier layer and the channel layer before entering the buffer layer, the barrier layer and the channel layer are divided by the isolation layers to form a diode capacitor region, a low-side transistor region, a high-side transistor region, a first resistor region and a second resistor region, a diode and an integrated capacitor are arranged on the diode capacitor region, and a low-side transistor, a high-side transistor, a first integrated resistor and a second integrated resistor are respectively arranged on the low-side transistor region, the high-side transistor region, the first resistor region and the second resistor region; the diode comprises a source metal connected to an upper surface of the barrier layer in the diode capacitor region, a first P-GaN layer, and a cathode metal that also serves as a plate of the integrated capacitor, wherein a gate metal is provided on the first P-GaN layer, and the source metal is connected to the gate metal and serves as an anode of the diode; a ground metal serving as another plate of the integrated capaci-tor is provided on a surface of the oxide passivation layer; the low-side transistor comprises a low-side transistor source metal connected to the upper surface of the barrier layer in the low-side transistor region, a second P-GaN layer, and a low-side transistor drain metal, wherein a low-side transistor gate metal is provided on the second P-GaN layer; the high-side transistor comprises a high-side transistor source metal connected to the upper surface of the barrier layer in the high-side transistor region and connected to the low-side transistor drain metal and the anode of the diode, a third P-GaN layer, and a high-side transistor drain metal, wherein a high-side transistor gate metal is provided on the third P-GaN layer; the first integrated resistor and the second integrated resistor are connected in series at a series node that is connected to the conductive substrate, one end of series connection of the first integrated resistor and the second integrated resistor is connected to the high-side tran-sistor drain metal, and the other end of the series connection of the first integrated resistor and the second integrated resistor is connected to the ground metal.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a first substrate through-hole metal is formed in the diode capacitor region, the first substrate through-hole metal is connected to the cathode metal, and the first substrate through-hole metal extends and is connected to the conductive substrate; a second substrate through-hole metal is formed in the first resistor region or the second resistor region, the second substrate through-hole metal is connected to the series node of the first integrated resistor and the second integrated resistor and extends to be connected to the conductive substrate; the first substrate through-hole metal and the diode capacitor region are located on one side of the barrier layer, and the second substrate through-hole metal, the first resistor region and the second resistor region are located on the other side of the barrier layer.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a first substrate through-hole metal is formed in the barrier layer, and the first substrate through-hole metal extends and is connected to the conductive substrate, the first substrate through-hole metal is connected to the cathode metal and the series node of the first integrated resistor and the second integrated resistor respectively, and the anode of the diode is connected to the high-side transistor source metal through an anode metal and is connected to an output terminal Vout; the first substrate through-hole metal, the cathode metal, the anode metal and the output terminal Vout are located in a middle part of the GaN-based half-bridge circuit, the first integrated resistor and the second integrated resistor are respectively located on both sides of the middle part, and the low-side transistor and the high-side transistor are respectively located on both sides of the middle part.
The monolithically integrated GaN-based half-bridge circuit according to claim 1, wherein a silicon dielectric layer is provided between the plate and the another plate of the integrated capacitor.
A half-bridge circuit, comprising: a low-side transistor and a high-side transistor, a drain of the low-side transistor being connected to a source of the high-side transistor and also connected to an output terminal Vout, and a substrate of the low-side transistor being connected to a substrate of the high-side transistor, wherein a series resistor is connected in parallel to a high-side transistor drain metal and a low-side transistor source metal, and the series resistor is composed of a first integrated resistor and a second integrated resistor connected in series at a series node that is connected to a conductive substrate; an integrated capacitor is connected in parallel to the series node and the low-side transistor source metal; a diode is connected between the output terminal Vout and the series node, and the diode has an anode connected to the output terminal Vout and a cathode connected to the series node.
The half-bridge circuit according to claim 7, wherein the low-side transistor and the high-side transistor are GaN HEMT devices. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithically integrated GaN-based half-bridge circuit
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
nucleation layer
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
half-bridge circuit with GaN HEMT devices
No layer stack recorded.
buffer layer
channel layer
barrier layer
oxide passivation layer
P-GaN
silicon dielectric layer
aluminum gallium nitride (AlGaN)
AlGaN
half-bridge circuit with GaN HEMT devices
No layer stack recorded.
buffer layer
channel layer
barrier layer
oxide passivation layer
P-GaN
silicon dielectric layer
aluminum gallium nitride (AlGaN)
AlGaN
half-bridge circuit with GaN HEMT devices
No layer stack recorded.
buffer layer
channel layer
barrier layer
oxide passivation layer
P-GaN
silicon dielectric layer
aluminum gallium nitride (AlGaN)
AlGaN
half-bridge circuit with GaN HEMT devices
No layer stack recorded.
buffer layer
channel layer
barrier layer
oxide passivation layer
P-GaN
silicon dielectric layer
aluminum gallium nitride (AlGaN)
AlGaN
