Patent
US 10,141,407GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME
David SEO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,141,407Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional of a graphene device according to example embodiments; [0026]
FIGS. 2A and 2B are energy band diagrams for describing operations of writing and erasing information on and from an information storage layer of a graphene …
FIGS. 3A and 3B are graphs of a bias voltage applied to a graphene device, according to example embodiments; [0028]
FIG. 4 is a graph showing a memory state stored in a multi-level in an information storage layer of a graphene device, according to example embodiments; and …
FIGS. 5A through 5D are diagrams for describing a method of manufacturing a graphene device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a first electrode; a first insulation layer on the first electrode; an information storage layer on the first insulation layer; a second insulation layer on the information storage layer; a graphene layer on the second insulation layer; a third insulation layer on a first region of the graphene layer; a second electrode on the third insulation layer; and a third electrode formed on a second region of the graphene layer, wherein the third insulation layer and the third electrode are directly formed on a same surface of the graphene layer, the third electrode and the third insulation layer are spaced apart from each other on top of a same surface of the graphene layer, and wherein the information storage layer is configured to store an electric charge and includes a high-k dielectric material layer. Previously presented
The graphene device of claim 1, wherein the graphene layer is a single film structure. Original
The graphene device of claim 1, wherein the information storage layer includes silicon nitride. Original
The graphene device of claim 1, wherein the information storage layer is configured to store information in a multi-level. Original
The graphene device of claim 1, wherein the third insulation layer is a gate insulation layer, and the second electrode is a gate electrode. Previously presented
The graphene device of claim 1, wherein the first to third electrodes are each independently one of a metal, a metal alloy, a conductive metal oxide, and a conductive metal nitride, the first and second insulation layers include silicon oxide, the third insulating layer include one of silicon oxide and a high-k material, and the information storage layer includes a dielectric material having a higher dielectric constant than silicon oxide. Previously presented
- 4.. Canceled
Canceled
The graphene device of claim 1, wherein the information storage layer further includes a compound configured to trap an electric charge in the high-k dielectric material layer, and the compound includes one of metal and silicon. Previously presented
- 12.. Canceled
Canceled
A graphene device comprising: a first electrode; a graphene layer on the first electrode; a second electrode and a third electrode spaced apart from each other on the graphene layer, the third electrode being directly formed on the graphene layer; an insulation layer between the graphene layer and the second electrode, the second electrode being configured to adjust a work function of the graphene layer; and an information storage layer between the graphene layer and the first electrode, the information storage layer configured to store an electric charge, wherein the insulation layer and the third electrode are directly formed on a same surface of the graphene layer, the third electrode and the insulation layer are spaced apart from each other on top of a same surface of the graphene layer, and wherein the information storage layer includes a high-k dielectric material layer. Previously presented
The graphene device of claim 13, further comprising: a first insulation layer between the information storage layer and the first electrode; and a second insulation layer between the information storage layer and the graphene layer, wherein a band gap of the first insulation layer is greater than a band gap of the information storage layer, a band gap of the second insulation layer is greater than the band gap of the information storage layer, and the insulation layer between the graphene layer and the second electrode is a third insulation layer. Original
The graphene device of claim 13, wherein the graphene layer is a single film structure. Original
The graphene device of claim 13, wherein the first electrode, second electrode, and third electrode are configured to adjust a capacitance value of the information storage layer based on setting the first electrode to a ground state and supplying at least one of electrons and holes to the information storage layer according to a power applied to the second and third electrodes. Original
The graphene device of claim 13, wherein the graphene layer is a contiguous layer, and the information storage layer includes a dielectric material having a higher dielectric constant than silicon oxide. *** END CLAIM LISTING *** Previously presented
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (bottom-gate flash memory type)
Materials described outside the worked examples.
graphene
high-k dielectric material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph showing a memory state stored in a multi-level in an information storage layer of a graphene device, according to example embodiments; and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–20 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,141,407Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional of a graphene device according to example embodiments; [0026]
FIGS. 2A and 2B are energy band diagrams for describing operations of writing and erasing information on and from an information storage layer of a graphene …
FIGS. 3A and 3B are graphs of a bias voltage applied to a graphene device, according to example embodiments; [0028]
FIG. 4 is a graph showing a memory state stored in a multi-level in an information storage layer of a graphene device, according to example embodiments; and …
FIGS. 5A through 5D are diagrams for describing a method of manufacturing a graphene device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a first electrode; a first insulation layer on the first electrode; an information storage layer on the first insulation layer; a second insulation layer on the information storage layer; a graphene layer on the second insulation layer; a third insulation layer on a first region of the graphene layer; a second electrode on the third insulation layer; and a third electrode formed on a second region of the graphene layer, wherein the third insulation layer and the third electrode are directly formed on a same surface of the graphene layer, the third electrode and the third insulation layer are spaced apart from each other on top of a same surface of the graphene layer, and wherein the information storage layer is configured to store an electric charge and includes a high-k dielectric material layer. Previously presented
The graphene device of claim 1, wherein the graphene layer is a single film structure. Original
The graphene device of claim 1, wherein the information storage layer includes silicon nitride. Original
The graphene device of claim 1, wherein the information storage layer is configured to store information in a multi-level. Original
The graphene device of claim 1, wherein the third insulation layer is a gate insulation layer, and the second electrode is a gate electrode. Previously presented
The graphene device of claim 1, wherein the first to third electrodes are each independently one of a metal, a metal alloy, a conductive metal oxide, and a conductive metal nitride, the first and second insulation layers include silicon oxide, the third insulating layer include one of silicon oxide and a high-k material, and the information storage layer includes a dielectric material having a higher dielectric constant than silicon oxide. Previously presented
- 4.. Canceled
Canceled
The graphene device of claim 1, wherein the information storage layer further includes a compound configured to trap an electric charge in the high-k dielectric material layer, and the compound includes one of metal and silicon. Previously presented
- 12.. Canceled
Canceled
A graphene device comprising: a first electrode; a graphene layer on the first electrode; a second electrode and a third electrode spaced apart from each other on the graphene layer, the third electrode being directly formed on the graphene layer; an insulation layer between the graphene layer and the second electrode, the second electrode being configured to adjust a work function of the graphene layer; and an information storage layer between the graphene layer and the first electrode, the information storage layer configured to store an electric charge, wherein the insulation layer and the third electrode are directly formed on a same surface of the graphene layer, the third electrode and the insulation layer are spaced apart from each other on top of a same surface of the graphene layer, and wherein the information storage layer includes a high-k dielectric material layer. Previously presented
The graphene device of claim 13, further comprising: a first insulation layer between the information storage layer and the first electrode; and a second insulation layer between the information storage layer and the graphene layer, wherein a band gap of the first insulation layer is greater than a band gap of the information storage layer, a band gap of the second insulation layer is greater than the band gap of the information storage layer, and the insulation layer between the graphene layer and the second electrode is a third insulation layer. Original
The graphene device of claim 13, wherein the graphene layer is a single film structure. Original
The graphene device of claim 13, wherein the first electrode, second electrode, and third electrode are configured to adjust a capacitance value of the information storage layer based on setting the first electrode to a ground state and supplying at least one of electrons and holes to the information storage layer according to a power applied to the second and third electrodes. Original
The graphene device of claim 13, wherein the graphene layer is a contiguous layer, and the information storage layer includes a dielectric material having a higher dielectric constant than silicon oxide. *** END CLAIM LISTING *** Previously presented
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (bottom-gate flash memory type)
Materials described outside the worked examples.
graphene
high-k dielectric material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph showing a memory state stored in a multi-level in an information storage layer of a graphene device, according to example embodiments; and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–20 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,141,407Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional of a graphene device according to example embodiments; [0026]
FIGS. 2A and 2B are energy band diagrams for describing operations of writing and erasing information on and from an information storage layer of a graphene …
FIGS. 3A and 3B are graphs of a bias voltage applied to a graphene device, according to example embodiments; [0028]
FIG. 4 is a graph showing a memory state stored in a multi-level in an information storage layer of a graphene device, according to example embodiments; and …
FIGS. 5A through 5D are diagrams for describing a method of manufacturing a graphene device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a first electrode; a first insulation layer on the first electrode; an information storage layer on the first insulation layer; a second insulation layer on the information storage layer; a graphene layer on the second insulation layer; a third insulation layer on a first region of the graphene layer; a second electrode on the third insulation layer; and a third electrode formed on a second region of the graphene layer, wherein the third insulation layer and the third electrode are directly formed on a same surface of the graphene layer, the third electrode and the third insulation layer are spaced apart from each other on top of a same surface of the graphene layer, and wherein the information storage layer is configured to store an electric charge and includes a high-k dielectric material layer. Previously presented
The graphene device of claim 1, wherein the graphene layer is a single film structure. Original
The graphene device of claim 1, wherein the information storage layer includes silicon nitride. Original
The graphene device of claim 1, wherein the information storage layer is configured to store information in a multi-level. Original
The graphene device of claim 1, wherein the third insulation layer is a gate insulation layer, and the second electrode is a gate electrode. Previously presented
The graphene device of claim 1, wherein the first to third electrodes are each independently one of a metal, a metal alloy, a conductive metal oxide, and a conductive metal nitride, the first and second insulation layers include silicon oxide, the third insulating layer include one of silicon oxide and a high-k material, and the information storage layer includes a dielectric material having a higher dielectric constant than silicon oxide. Previously presented
- 4.. Canceled
Canceled
The graphene device of claim 1, wherein the information storage layer further includes a compound configured to trap an electric charge in the high-k dielectric material layer, and the compound includes one of metal and silicon. Previously presented
- 12.. Canceled
Canceled
A graphene device comprising: a first electrode; a graphene layer on the first electrode; a second electrode and a third electrode spaced apart from each other on the graphene layer, the third electrode being directly formed on the graphene layer; an insulation layer between the graphene layer and the second electrode, the second electrode being configured to adjust a work function of the graphene layer; and an information storage layer between the graphene layer and the first electrode, the information storage layer configured to store an electric charge, wherein the insulation layer and the third electrode are directly formed on a same surface of the graphene layer, the third electrode and the insulation layer are spaced apart from each other on top of a same surface of the graphene layer, and wherein the information storage layer includes a high-k dielectric material layer. Previously presented
The graphene device of claim 13, further comprising: a first insulation layer between the information storage layer and the first electrode; and a second insulation layer between the information storage layer and the graphene layer, wherein a band gap of the first insulation layer is greater than a band gap of the information storage layer, a band gap of the second insulation layer is greater than the band gap of the information storage layer, and the insulation layer between the graphene layer and the second electrode is a third insulation layer. Original
The graphene device of claim 13, wherein the graphene layer is a single film structure. Original
The graphene device of claim 13, wherein the first electrode, second electrode, and third electrode are configured to adjust a capacitance value of the information storage layer based on setting the first electrode to a ground state and supplying at least one of electrons and holes to the information storage layer according to a power applied to the second and third electrodes. Original
The graphene device of claim 13, wherein the graphene layer is a contiguous layer, and the information storage layer includes a dielectric material having a higher dielectric constant than silicon oxide. *** END CLAIM LISTING *** Previously presented
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (bottom-gate flash memory type)
Materials described outside the worked examples.
graphene
high-k dielectric material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph showing a memory state stored in a multi-level in an information storage layer of a graphene device, according to example embodiments; and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–20 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,141,407Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional of a graphene device according to example embodiments; [0026]
FIGS. 2A and 2B are energy band diagrams for describing operations of writing and erasing information on and from an information storage layer of a graphene …
FIGS. 3A and 3B are graphs of a bias voltage applied to a graphene device, according to example embodiments; [0028]
FIG. 4 is a graph showing a memory state stored in a multi-level in an information storage layer of a graphene device, according to example embodiments; and …
FIGS. 5A through 5D are diagrams for describing a method of manufacturing a graphene device, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a first electrode; a first insulation layer on the first electrode; an information storage layer on the first insulation layer; a second insulation layer on the information storage layer; a graphene layer on the second insulation layer; a third insulation layer on a first region of the graphene layer; a second electrode on the third insulation layer; and a third electrode formed on a second region of the graphene layer, wherein the third insulation layer and the third electrode are directly formed on a same surface of the graphene layer, the third electrode and the third insulation layer are spaced apart from each other on top of a same surface of the graphene layer, and wherein the information storage layer is configured to store an electric charge and includes a high-k dielectric material layer. Previously presented
The graphene device of claim 1, wherein the graphene layer is a single film structure. Original
The graphene device of claim 1, wherein the information storage layer includes silicon nitride. Original
The graphene device of claim 1, wherein the information storage layer is configured to store information in a multi-level. Original
The graphene device of claim 1, wherein the third insulation layer is a gate insulation layer, and the second electrode is a gate electrode. Previously presented
The graphene device of claim 1, wherein the first to third electrodes are each independently one of a metal, a metal alloy, a conductive metal oxide, and a conductive metal nitride, the first and second insulation layers include silicon oxide, the third insulating layer include one of silicon oxide and a high-k material, and the information storage layer includes a dielectric material having a higher dielectric constant than silicon oxide. Previously presented
- 4.. Canceled
Canceled
The graphene device of claim 1, wherein the information storage layer further includes a compound configured to trap an electric charge in the high-k dielectric material layer, and the compound includes one of metal and silicon. Previously presented
- 12.. Canceled
Canceled
A graphene device comprising: a first electrode; a graphene layer on the first electrode; a second electrode and a third electrode spaced apart from each other on the graphene layer, the third electrode being directly formed on the graphene layer; an insulation layer between the graphene layer and the second electrode, the second electrode being configured to adjust a work function of the graphene layer; and an information storage layer between the graphene layer and the first electrode, the information storage layer configured to store an electric charge, wherein the insulation layer and the third electrode are directly formed on a same surface of the graphene layer, the third electrode and the insulation layer are spaced apart from each other on top of a same surface of the graphene layer, and wherein the information storage layer includes a high-k dielectric material layer. Previously presented
The graphene device of claim 13, further comprising: a first insulation layer between the information storage layer and the first electrode; and a second insulation layer between the information storage layer and the graphene layer, wherein a band gap of the first insulation layer is greater than a band gap of the information storage layer, a band gap of the second insulation layer is greater than the band gap of the information storage layer, and the insulation layer between the graphene layer and the second electrode is a third insulation layer. Original
The graphene device of claim 13, wherein the graphene layer is a single film structure. Original
The graphene device of claim 13, wherein the first electrode, second electrode, and third electrode are configured to adjust a capacitance value of the information storage layer based on setting the first electrode to a ground state and supplying at least one of electrons and holes to the information storage layer according to a power applied to the second and third electrodes. Original
The graphene device of claim 13, wherein the graphene layer is a contiguous layer, and the information storage layer includes a dielectric material having a higher dielectric constant than silicon oxide. *** END CLAIM LISTING *** Previously presented
. Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (bottom-gate flash memory type)
Materials described outside the worked examples.
graphene
high-k dielectric material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph showing a memory state stored in a multi-level in an information storage layer of a graphene device, according to example embodiments; and …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 3–20 nm | — |
Related documents with shared materials, methods, properties, or citations.
graphene device (graphene-gate memory type)
silicon oxide
SiO₂
silicon nitride
Si₃N₄
electrode material (metal, metal alloy, conductive metal oxide, or conductive metal nitride)
graphene device (graphene-gate memory type)
silicon oxide
SiO₂
silicon nitride
Si₃N₄
electrode material (metal, metal alloy, conductive metal oxide, or conductive metal nitride)
graphene device (graphene-gate memory type)
silicon oxide
SiO₂
silicon nitride
Si₃N₄
electrode material (metal, metal alloy, conductive metal oxide, or conductive metal nitride)
graphene device (graphene-gate memory type)
silicon oxide
SiO₂
silicon nitride
Si₃N₄
electrode material (metal, metal alloy, conductive metal oxide, or conductive metal nitride)