Patent
US 10,056,520PHOTODIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Suk Ho CHOI
US
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Atlas literature
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US 10,056,520Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the photodiode including a graphene-silicon quantum dot hybrid structure includes the silicon quantum dot layer 110 including the silicon quantum dots …
FIGS. 2A to 2 E illustrate a process of manufacturing a photodiode including the graphene-silicon quantum dot hybrid structure according to an embodiment of …
FIGS. 3A to 3F illustrate current-voltage curves, which are dependent upon a change in incident wavelength, of a photodiode including the graphene-silicon …
FIGS. 4A to 4C illustrate a graph of a ratio of photo current to dark current for a photodiode including the graphene-silicon quantum dot hybrid structure …
FIGS. 8 and 9 are graphs illustrating a linear dynamic range (LDR) of a photodiode including the graphene-silicon quantum dot hybrid structure according to an …
FIGS. 10 and 11 are graphs illustrating a 3-dB band width of a photodiode including the graphene-silicon quantum dot hybrid structure according to an …
FIGS. 12 and 13; FIG 15 is a graph showing photoresponsivity, which is dependent upon the area of an active layer, of a photodiode including the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A photodiode comprising a graphene-silicon quantum dot hybrid structure, the photodiode comprising: a hybrid structure composed of a silicon quantum dot layer comprising silicon (Si) quantum dots, each of which is formed in a thin film of a silicon oxide, and doped graphene formed on the silicon quantum dot layer; and electrodes formed on upper and lower parts of the hybrid structure, wherein the silicon quantum dot layer comprises silicon quantum dots formed in a Si O 2 thin film by alternately and sequentially laminating Si O 2 and SiO R thin films on a substrate and then thermally treating the alternately and sequentially laminated Si O 2 and SiO, thin films, wherein a doping concentration of the doped graphene is controlled by coating AuC 3 on a graphene and then annealing, and wherein optical and electrical characteristics of the photodiode are controlled according to sizes of the silicon quantum dots and a doping concentration of the doped graphene. Currently amended
: The photodiode according to claim 1, wherein the silicon quantum dot layer-2, is formed by AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₉₅₉ thermally treating the alternately and sequentially laminated SiO 2 and SiO R thin films at 1000 0 C to 1200 ° C in a nitrogen atmosphere. Currently amended
: The photodiode according t claim 1, wherein x is controlled to have a value of 0.8 to 1.6 and the sizes of the silicon quantum dots are controlled to correspond to a value of x. Currently amended
: The photodiode according to claim 1, wherein the graphene is formed by reacting a catalyst layer with a mixed gas containing carbon and depositing a reacted product on the catalyst layer by chemical vapor deposition (CVD). Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-silicon quantum dot hybrid photodiode
Materials described outside the worked examples.
doped graphene
silicon dioxide thin film
SiO₂
silicon suboxide thin film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A to 4C illustrate a graph of a ratio of photo current to dark current for a photodiode including the graphene-silicon quantum dot hybrid structure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–30 mM | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,056,520Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the photodiode including a graphene-silicon quantum dot hybrid structure includes the silicon quantum dot layer 110 including the silicon quantum dots …
FIGS. 2A to 2 E illustrate a process of manufacturing a photodiode including the graphene-silicon quantum dot hybrid structure according to an embodiment of …
FIGS. 3A to 3F illustrate current-voltage curves, which are dependent upon a change in incident wavelength, of a photodiode including the graphene-silicon …
FIGS. 4A to 4C illustrate a graph of a ratio of photo current to dark current for a photodiode including the graphene-silicon quantum dot hybrid structure …
FIGS. 8 and 9 are graphs illustrating a linear dynamic range (LDR) of a photodiode including the graphene-silicon quantum dot hybrid structure according to an …
FIGS. 10 and 11 are graphs illustrating a 3-dB band width of a photodiode including the graphene-silicon quantum dot hybrid structure according to an …
FIGS. 12 and 13; FIG 15 is a graph showing photoresponsivity, which is dependent upon the area of an active layer, of a photodiode including the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A photodiode comprising a graphene-silicon quantum dot hybrid structure, the photodiode comprising: a hybrid structure composed of a silicon quantum dot layer comprising silicon (Si) quantum dots, each of which is formed in a thin film of a silicon oxide, and doped graphene formed on the silicon quantum dot layer; and electrodes formed on upper and lower parts of the hybrid structure, wherein the silicon quantum dot layer comprises silicon quantum dots formed in a Si O 2 thin film by alternately and sequentially laminating Si O 2 and SiO R thin films on a substrate and then thermally treating the alternately and sequentially laminated Si O 2 and SiO, thin films, wherein a doping concentration of the doped graphene is controlled by coating AuC 3 on a graphene and then annealing, and wherein optical and electrical characteristics of the photodiode are controlled according to sizes of the silicon quantum dots and a doping concentration of the doped graphene. Currently amended
: The photodiode according to claim 1, wherein the silicon quantum dot layer-2, is formed by AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₉₅₉ thermally treating the alternately and sequentially laminated SiO 2 and SiO R thin films at 1000 0 C to 1200 ° C in a nitrogen atmosphere. Currently amended
: The photodiode according t claim 1, wherein x is controlled to have a value of 0.8 to 1.6 and the sizes of the silicon quantum dots are controlled to correspond to a value of x. Currently amended
: The photodiode according to claim 1, wherein the graphene is formed by reacting a catalyst layer with a mixed gas containing carbon and depositing a reacted product on the catalyst layer by chemical vapor deposition (CVD). Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-silicon quantum dot hybrid photodiode
Materials described outside the worked examples.
doped graphene
silicon dioxide thin film
SiO₂
silicon suboxide thin film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A to 4C illustrate a graph of a ratio of photo current to dark current for a photodiode including the graphene-silicon quantum dot hybrid structure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–30 mM | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,056,520Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the photodiode including a graphene-silicon quantum dot hybrid structure includes the silicon quantum dot layer 110 including the silicon quantum dots …
FIGS. 2A to 2 E illustrate a process of manufacturing a photodiode including the graphene-silicon quantum dot hybrid structure according to an embodiment of …
FIGS. 3A to 3F illustrate current-voltage curves, which are dependent upon a change in incident wavelength, of a photodiode including the graphene-silicon …
FIGS. 4A to 4C illustrate a graph of a ratio of photo current to dark current for a photodiode including the graphene-silicon quantum dot hybrid structure …
FIGS. 8 and 9 are graphs illustrating a linear dynamic range (LDR) of a photodiode including the graphene-silicon quantum dot hybrid structure according to an …
FIGS. 10 and 11 are graphs illustrating a 3-dB band width of a photodiode including the graphene-silicon quantum dot hybrid structure according to an …
FIGS. 12 and 13; FIG 15 is a graph showing photoresponsivity, which is dependent upon the area of an active layer, of a photodiode including the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A photodiode comprising a graphene-silicon quantum dot hybrid structure, the photodiode comprising: a hybrid structure composed of a silicon quantum dot layer comprising silicon (Si) quantum dots, each of which is formed in a thin film of a silicon oxide, and doped graphene formed on the silicon quantum dot layer; and electrodes formed on upper and lower parts of the hybrid structure, wherein the silicon quantum dot layer comprises silicon quantum dots formed in a Si O 2 thin film by alternately and sequentially laminating Si O 2 and SiO R thin films on a substrate and then thermally treating the alternately and sequentially laminated Si O 2 and SiO, thin films, wherein a doping concentration of the doped graphene is controlled by coating AuC 3 on a graphene and then annealing, and wherein optical and electrical characteristics of the photodiode are controlled according to sizes of the silicon quantum dots and a doping concentration of the doped graphene. Currently amended
: The photodiode according to claim 1, wherein the silicon quantum dot layer-2, is formed by AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₉₅₉ thermally treating the alternately and sequentially laminated SiO 2 and SiO R thin films at 1000 0 C to 1200 ° C in a nitrogen atmosphere. Currently amended
: The photodiode according t claim 1, wherein x is controlled to have a value of 0.8 to 1.6 and the sizes of the silicon quantum dots are controlled to correspond to a value of x. Currently amended
: The photodiode according to claim 1, wherein the graphene is formed by reacting a catalyst layer with a mixed gas containing carbon and depositing a reacted product on the catalyst layer by chemical vapor deposition (CVD). Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-silicon quantum dot hybrid photodiode
Materials described outside the worked examples.
doped graphene
silicon dioxide thin film
SiO₂
silicon suboxide thin film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A to 4C illustrate a graph of a ratio of photo current to dark current for a photodiode including the graphene-silicon quantum dot hybrid structure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–30 mM | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,056,520Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the photodiode including a graphene-silicon quantum dot hybrid structure includes the silicon quantum dot layer 110 including the silicon quantum dots …
FIGS. 2A to 2 E illustrate a process of manufacturing a photodiode including the graphene-silicon quantum dot hybrid structure according to an embodiment of …
FIGS. 3A to 3F illustrate current-voltage curves, which are dependent upon a change in incident wavelength, of a photodiode including the graphene-silicon …
FIGS. 4A to 4C illustrate a graph of a ratio of photo current to dark current for a photodiode including the graphene-silicon quantum dot hybrid structure …
FIGS. 8 and 9 are graphs illustrating a linear dynamic range (LDR) of a photodiode including the graphene-silicon quantum dot hybrid structure according to an …
FIGS. 10 and 11 are graphs illustrating a 3-dB band width of a photodiode including the graphene-silicon quantum dot hybrid structure according to an …
FIGS. 12 and 13; FIG 15 is a graph showing photoresponsivity, which is dependent upon the area of an active layer, of a photodiode including the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A photodiode comprising a graphene-silicon quantum dot hybrid structure, the photodiode comprising: a hybrid structure composed of a silicon quantum dot layer comprising silicon (Si) quantum dots, each of which is formed in a thin film of a silicon oxide, and doped graphene formed on the silicon quantum dot layer; and electrodes formed on upper and lower parts of the hybrid structure, wherein the silicon quantum dot layer comprises silicon quantum dots formed in a Si O 2 thin film by alternately and sequentially laminating Si O 2 and SiO R thin films on a substrate and then thermally treating the alternately and sequentially laminated Si O 2 and SiO, thin films, wherein a doping concentration of the doped graphene is controlled by coating AuC 3 on a graphene and then annealing, and wherein optical and electrical characteristics of the photodiode are controlled according to sizes of the silicon quantum dots and a doping concentration of the doped graphene. Currently amended
: The photodiode according to claim 1, wherein the silicon quantum dot layer-2, is formed by AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₂₃₀₉₅₉ thermally treating the alternately and sequentially laminated SiO 2 and SiO R thin films at 1000 0 C to 1200 ° C in a nitrogen atmosphere. Currently amended
: The photodiode according t claim 1, wherein x is controlled to have a value of 0.8 to 1.6 and the sizes of the silicon quantum dots are controlled to correspond to a value of x. Currently amended
: The photodiode according to claim 1, wherein the graphene is formed by reacting a catalyst layer with a mixed gas containing carbon and depositing a reacted product on the catalyst layer by chemical vapor deposition (CVD). Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-silicon quantum dot hybrid photodiode
Materials described outside the worked examples.
doped graphene
silicon dioxide thin film
SiO₂
silicon suboxide thin film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A to 4C illustrate a graph of a ratio of photo current to dark current for a photodiode including the graphene-silicon quantum dot hybrid structure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–30 mM | — |
Related documents with shared materials, methods, properties, or citations.
SiOx
gold(III) chloride dopant
AuCl₃
silicon quantum dots
Si
FIGS. 12 and 13; FIG 15 is a graph showing photoresponsivity, which is dependent upon the area of an active layer, of a photodiode including the …
SiOx
gold(III) chloride dopant
AuCl₃
silicon quantum dots
Si
FIGS. 12 and 13; FIG 15 is a graph showing photoresponsivity, which is dependent upon the area of an active layer, of a photodiode including the …
SiOx
gold(III) chloride dopant
AuCl₃
silicon quantum dots
Si
FIGS. 12 and 13; FIG 15 is a graph showing photoresponsivity, which is dependent upon the area of an active layer, of a photodiode including the …
SiOx
gold(III) chloride dopant
AuCl₃
silicon quantum dots
Si
FIGS. 12 and 13; FIG 15 is a graph showing photoresponsivity, which is dependent upon the area of an active layer, of a photodiode including the …