Patent
US 10,850,985METHOD OF FORMING NANOCRYSTALLINE GRAPHENE, AND DEVICE INCLUDING NANOCRYSTALLINE GRAPHENE
Alum JUNG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,850,985Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment; [0028]
FIGS. 2A to 2D are views for illustrating a method of forming nanocrystalline graphene, according to an embodiment; [0029]
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
FIGS. 4A to 4D are views for illustrating a method of forming nanocrystalline graphene according to another embodiment; and [0031]
FIG. 5 is a view for illustrating a method of forming nanocrystalline graphene, according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming nanocrystalline graphene, the method comprising: arranging a substrate in a reaction chamber; forming a protective layer on the substrate; injecting into the reaction chamber a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas; generating a plasma of the reaction gas in the reaction chamber; and growing a nanocrystalline graphene directly on a surface of the protective layer using the plasma of the reaction gas at a temperature of 700 ° C or lower, wherein the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (G O Ds), boron nitride (h-BN), and MX 2, wherein M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (TCMS). Currently amended
The method of claim 1, wherein the substrate includes at least one of silicon dioxide (Si O 2), carbon-doped Si O 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ). Original
The method of claim 1, wherein the plasma of the reaction gas includes radio frequency (R F) plasma or microwave (MW) plasma. Original
The method of claim 1, wherein a power for generating the plasma of the reaction gas is in a range of about 10 W to about 4000 W. Original
The method of claim 1, wherein a volume ratio of the carbon source gas, the inert gas, and the hydrogen gas is 1-20:0-100:0-100 during the growing the nanocrystalline graphene. Original
The method of claim 1, wherein a process pressure during the growing the nanocrystalline graphene is in a range of about 0.005 Torr to about 10 Torr. Original
The method of claim 1, wherein the carbon source gas includes at least one of a hydrocarbon gas or a vapor of a liquid precursor containing carbon. Original
The method of claim 1, wherein the inert gas includes at least one of argon gas, nitrogen gas, helium gas, krypton gas, or xenon gas. Original
The method of claim 1, wherein the nanocrystalline graphene includes crystals of a size in a range of about 0.5 nm to about 70 nm. Original
The method of claim 1, wherein the forming the protective layer forms the protective layer only on a part of an upper surface of the substrate. Original
Canceled
Canceled
A device including nanocrystalline graphene, the device comprising: a substrate; a protective layer on the substrate; and a nanocrystalline graphene on the protective layer, the nanocrystalline graphene including crystals having a size in a range from 0.5 nm to about 70 nm, wherein the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (G O Ds), boron nitride (h-BN), and MX 2, M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (T CMS). Currently amended
The device of claim 15, wherein the substrate includes at least one of silicon dioxide (SiO 2), carbon-doped SiO 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ). Original
The device of claim 15, wherein the nanocrystalline graphene is grown directly on a surface of the protective layer by using a process performed at a temperature of 700 o C or lower using a plasma of a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas, wherein the substrate includes at least one of carbon-doped SiO 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ), the protective layer includes one selected from a -the self-assembled monolayer, the graphene quantum dots (GQDs), and the MX 2. [[,]]. Currently amended
The device of claim 15, wherein the protective layer is only on a part of an upper surface of the substrate. Original
Canceled
A device including nanocrystalline graphene, the device comprising: a substrate; a protective layer on the substrate, the protective layer being on only a part of an upper surface of the substrate; a nanocrystalline graphene on the protective layer; and a second nanocrystalline graphene on the upper surface of the substrate, wherein the nanocrystalline graphene on the protective layer is a first nanocrystalline graphene on an upper surface of the protective layer, and a thickness of first nanocrystalline graphene is different from a thickness of the second nanocrystalline graphene. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
device including nanocrystalline graphene
device including first and second nanocrystalline graphene of different thickness
Materials described outside the worked examples.
nanocrystalline graphene
graphene quantum dots (GQDs)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nanocrystalline graphene crystal size range | 0.5–70 nm | nanocrystalline graphene |
— | 10–4000 W |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,850,985Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment; [0028]
FIGS. 2A to 2D are views for illustrating a method of forming nanocrystalline graphene, according to an embodiment; [0029]
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
FIGS. 4A to 4D are views for illustrating a method of forming nanocrystalline graphene according to another embodiment; and [0031]
FIG. 5 is a view for illustrating a method of forming nanocrystalline graphene, according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming nanocrystalline graphene, the method comprising: arranging a substrate in a reaction chamber; forming a protective layer on the substrate; injecting into the reaction chamber a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas; generating a plasma of the reaction gas in the reaction chamber; and growing a nanocrystalline graphene directly on a surface of the protective layer using the plasma of the reaction gas at a temperature of 700 ° C or lower, wherein the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (G O Ds), boron nitride (h-BN), and MX 2, wherein M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (TCMS). Currently amended
The method of claim 1, wherein the substrate includes at least one of silicon dioxide (Si O 2), carbon-doped Si O 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ). Original
The method of claim 1, wherein the plasma of the reaction gas includes radio frequency (R F) plasma or microwave (MW) plasma. Original
The method of claim 1, wherein a power for generating the plasma of the reaction gas is in a range of about 10 W to about 4000 W. Original
The method of claim 1, wherein a volume ratio of the carbon source gas, the inert gas, and the hydrogen gas is 1-20:0-100:0-100 during the growing the nanocrystalline graphene. Original
The method of claim 1, wherein a process pressure during the growing the nanocrystalline graphene is in a range of about 0.005 Torr to about 10 Torr. Original
The method of claim 1, wherein the carbon source gas includes at least one of a hydrocarbon gas or a vapor of a liquid precursor containing carbon. Original
The method of claim 1, wherein the inert gas includes at least one of argon gas, nitrogen gas, helium gas, krypton gas, or xenon gas. Original
The method of claim 1, wherein the nanocrystalline graphene includes crystals of a size in a range of about 0.5 nm to about 70 nm. Original
The method of claim 1, wherein the forming the protective layer forms the protective layer only on a part of an upper surface of the substrate. Original
Canceled
Canceled
A device including nanocrystalline graphene, the device comprising: a substrate; a protective layer on the substrate; and a nanocrystalline graphene on the protective layer, the nanocrystalline graphene including crystals having a size in a range from 0.5 nm to about 70 nm, wherein the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (G O Ds), boron nitride (h-BN), and MX 2, M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (T CMS). Currently amended
The device of claim 15, wherein the substrate includes at least one of silicon dioxide (SiO 2), carbon-doped SiO 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ). Original
The device of claim 15, wherein the nanocrystalline graphene is grown directly on a surface of the protective layer by using a process performed at a temperature of 700 o C or lower using a plasma of a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas, wherein the substrate includes at least one of carbon-doped SiO 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ), the protective layer includes one selected from a -the self-assembled monolayer, the graphene quantum dots (GQDs), and the MX 2. [[,]]. Currently amended
The device of claim 15, wherein the protective layer is only on a part of an upper surface of the substrate. Original
Canceled
A device including nanocrystalline graphene, the device comprising: a substrate; a protective layer on the substrate, the protective layer being on only a part of an upper surface of the substrate; a nanocrystalline graphene on the protective layer; and a second nanocrystalline graphene on the upper surface of the substrate, wherein the nanocrystalline graphene on the protective layer is a first nanocrystalline graphene on an upper surface of the protective layer, and a thickness of first nanocrystalline graphene is different from a thickness of the second nanocrystalline graphene. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
device including nanocrystalline graphene
device including first and second nanocrystalline graphene of different thickness
Materials described outside the worked examples.
nanocrystalline graphene
graphene quantum dots (GQDs)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nanocrystalline graphene crystal size range | 0.5–70 nm | nanocrystalline graphene |
— | 10–4000 W |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,850,985Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment; [0028]
FIGS. 2A to 2D are views for illustrating a method of forming nanocrystalline graphene, according to an embodiment; [0029]
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
FIGS. 4A to 4D are views for illustrating a method of forming nanocrystalline graphene according to another embodiment; and [0031]
FIG. 5 is a view for illustrating a method of forming nanocrystalline graphene, according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming nanocrystalline graphene, the method comprising: arranging a substrate in a reaction chamber; forming a protective layer on the substrate; injecting into the reaction chamber a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas; generating a plasma of the reaction gas in the reaction chamber; and growing a nanocrystalline graphene directly on a surface of the protective layer using the plasma of the reaction gas at a temperature of 700 ° C or lower, wherein the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (G O Ds), boron nitride (h-BN), and MX 2, wherein M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (TCMS). Currently amended
The method of claim 1, wherein the substrate includes at least one of silicon dioxide (Si O 2), carbon-doped Si O 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ). Original
The method of claim 1, wherein the plasma of the reaction gas includes radio frequency (R F) plasma or microwave (MW) plasma. Original
The method of claim 1, wherein a power for generating the plasma of the reaction gas is in a range of about 10 W to about 4000 W. Original
The method of claim 1, wherein a volume ratio of the carbon source gas, the inert gas, and the hydrogen gas is 1-20:0-100:0-100 during the growing the nanocrystalline graphene. Original
The method of claim 1, wherein a process pressure during the growing the nanocrystalline graphene is in a range of about 0.005 Torr to about 10 Torr. Original
The method of claim 1, wherein the carbon source gas includes at least one of a hydrocarbon gas or a vapor of a liquid precursor containing carbon. Original
The method of claim 1, wherein the inert gas includes at least one of argon gas, nitrogen gas, helium gas, krypton gas, or xenon gas. Original
The method of claim 1, wherein the nanocrystalline graphene includes crystals of a size in a range of about 0.5 nm to about 70 nm. Original
The method of claim 1, wherein the forming the protective layer forms the protective layer only on a part of an upper surface of the substrate. Original
Canceled
Canceled
A device including nanocrystalline graphene, the device comprising: a substrate; a protective layer on the substrate; and a nanocrystalline graphene on the protective layer, the nanocrystalline graphene including crystals having a size in a range from 0.5 nm to about 70 nm, wherein the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (G O Ds), boron nitride (h-BN), and MX 2, M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (T CMS). Currently amended
The device of claim 15, wherein the substrate includes at least one of silicon dioxide (SiO 2), carbon-doped SiO 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ). Original
The device of claim 15, wherein the nanocrystalline graphene is grown directly on a surface of the protective layer by using a process performed at a temperature of 700 o C or lower using a plasma of a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas, wherein the substrate includes at least one of carbon-doped SiO 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ), the protective layer includes one selected from a -the self-assembled monolayer, the graphene quantum dots (GQDs), and the MX 2. [[,]]. Currently amended
The device of claim 15, wherein the protective layer is only on a part of an upper surface of the substrate. Original
Canceled
A device including nanocrystalline graphene, the device comprising: a substrate; a protective layer on the substrate, the protective layer being on only a part of an upper surface of the substrate; a nanocrystalline graphene on the protective layer; and a second nanocrystalline graphene on the upper surface of the substrate, wherein the nanocrystalline graphene on the protective layer is a first nanocrystalline graphene on an upper surface of the protective layer, and a thickness of first nanocrystalline graphene is different from a thickness of the second nanocrystalline graphene. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
device including nanocrystalline graphene
device including first and second nanocrystalline graphene of different thickness
Materials described outside the worked examples.
nanocrystalline graphene
graphene quantum dots (GQDs)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nanocrystalline graphene crystal size range | 0.5–70 nm | nanocrystalline graphene |
— | 10–4000 W |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,850,985Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment; [0028]
FIGS. 2A to 2D are views for illustrating a method of forming nanocrystalline graphene, according to an embodiment; [0029]
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
FIGS. 4A to 4D are views for illustrating a method of forming nanocrystalline graphene according to another embodiment; and [0031]
FIG. 5 is a view for illustrating a method of forming nanocrystalline graphene, according to another embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming nanocrystalline graphene, the method comprising: arranging a substrate in a reaction chamber; forming a protective layer on the substrate; injecting into the reaction chamber a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas; generating a plasma of the reaction gas in the reaction chamber; and growing a nanocrystalline graphene directly on a surface of the protective layer using the plasma of the reaction gas at a temperature of 700 ° C or lower, wherein the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (G O Ds), boron nitride (h-BN), and MX 2, wherein M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (TCMS). Currently amended
The method of claim 1, wherein the substrate includes at least one of silicon dioxide (Si O 2), carbon-doped Si O 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ). Original
The method of claim 1, wherein the plasma of the reaction gas includes radio frequency (R F) plasma or microwave (MW) plasma. Original
The method of claim 1, wherein a power for generating the plasma of the reaction gas is in a range of about 10 W to about 4000 W. Original
The method of claim 1, wherein a volume ratio of the carbon source gas, the inert gas, and the hydrogen gas is 1-20:0-100:0-100 during the growing the nanocrystalline graphene. Original
The method of claim 1, wherein a process pressure during the growing the nanocrystalline graphene is in a range of about 0.005 Torr to about 10 Torr. Original
The method of claim 1, wherein the carbon source gas includes at least one of a hydrocarbon gas or a vapor of a liquid precursor containing carbon. Original
The method of claim 1, wherein the inert gas includes at least one of argon gas, nitrogen gas, helium gas, krypton gas, or xenon gas. Original
The method of claim 1, wherein the nanocrystalline graphene includes crystals of a size in a range of about 0.5 nm to about 70 nm. Original
The method of claim 1, wherein the forming the protective layer forms the protective layer only on a part of an upper surface of the substrate. Original
Canceled
Canceled
A device including nanocrystalline graphene, the device comprising: a substrate; a protective layer on the substrate; and a nanocrystalline graphene on the protective layer, the nanocrystalline graphene including crystals having a size in a range from 0.5 nm to about 70 nm, wherein the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (G O Ds), boron nitride (h-BN), and MX 2, M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (T CMS). Currently amended
The device of claim 15, wherein the substrate includes at least one of silicon dioxide (SiO 2), carbon-doped SiO 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ). Original
The device of claim 15, wherein the nanocrystalline graphene is grown directly on a surface of the protective layer by using a process performed at a temperature of 700 o C or lower using a plasma of a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas, wherein the substrate includes at least one of carbon-doped SiO 2, silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ), the protective layer includes one selected from a -the self-assembled monolayer, the graphene quantum dots (GQDs), and the MX 2. [[,]]. Currently amended
The device of claim 15, wherein the protective layer is only on a part of an upper surface of the substrate. Original
Canceled
A device including nanocrystalline graphene, the device comprising: a substrate; a protective layer on the substrate, the protective layer being on only a part of an upper surface of the substrate; a nanocrystalline graphene on the protective layer; and a second nanocrystalline graphene on the upper surface of the substrate, wherein the nanocrystalline graphene on the protective layer is a first nanocrystalline graphene on an upper surface of the protective layer, and a thickness of first nanocrystalline graphene is different from a thickness of the second nanocrystalline graphene. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
device including nanocrystalline graphene
device including first and second nanocrystalline graphene of different thickness
Materials described outside the worked examples.
nanocrystalline graphene
graphene quantum dots (GQDs)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
nanocrystalline graphene crystal size range | 0.5–70 nm | nanocrystalline graphene |
— | 10–4000 W |
Related documents with shared materials, methods, properties, or citations.
semiconductor device with nanocrystalline graphene barrier layer
boron nitride (h-BN)
h-BN
MX₂ transition metal dichalcogenide monolayer (TMDC)
MX₂
amorphous carbon layer
hexamethyldisilazane (HMDS)
chlorotrimethylsilane (TMCS)
trichloromethylsilane (TCMS)
silicon dioxide (SiO₂)
SiO₂
carbon-doped SiO₂
silsesquioxane
hydrogen silsesquioxane (HSQ)
methyl silsesquioxane (MSQ)
copper layer
Cu
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
| — |
Pressure | 0.005–10 Torr | — |
semiconductor device with nanocrystalline graphene barrier layer
boron nitride (h-BN)
h-BN
MX₂ transition metal dichalcogenide monolayer (TMDC)
MX₂
amorphous carbon layer
hexamethyldisilazane (HMDS)
chlorotrimethylsilane (TMCS)
trichloromethylsilane (TCMS)
silicon dioxide (SiO₂)
SiO₂
carbon-doped SiO₂
silsesquioxane
hydrogen silsesquioxane (HSQ)
methyl silsesquioxane (MSQ)
copper layer
Cu
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
| — |
Pressure | 0.005–10 Torr | — |
semiconductor device with nanocrystalline graphene barrier layer
boron nitride (h-BN)
h-BN
MX₂ transition metal dichalcogenide monolayer (TMDC)
MX₂
amorphous carbon layer
hexamethyldisilazane (HMDS)
chlorotrimethylsilane (TMCS)
trichloromethylsilane (TCMS)
silicon dioxide (SiO₂)
SiO₂
carbon-doped SiO₂
silsesquioxane
hydrogen silsesquioxane (HSQ)
methyl silsesquioxane (MSQ)
copper layer
Cu
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
| — |
Pressure | 0.005–10 Torr | — |
semiconductor device with nanocrystalline graphene barrier layer
boron nitride (h-BN)
h-BN
MX₂ transition metal dichalcogenide monolayer (TMDC)
MX₂
amorphous carbon layer
hexamethyldisilazane (HMDS)
chlorotrimethylsilane (TMCS)
trichloromethylsilane (TCMS)
silicon dioxide (SiO₂)
SiO₂
carbon-doped SiO₂
silsesquioxane
hydrogen silsesquioxane (HSQ)
methyl silsesquioxane (MSQ)
copper layer
Cu
FIG. 3 is a graph showing Fourier-transform infrared (FT-IR) spectroscopy data of a substrate on which a protective layer is not arranged, of a substrate on …
| — |
Pressure | 0.005–10 Torr | — |