Patent
US 9,945,728GRAPHENE-BASED INFRARED SINGLE PHOTON DETECTOR
Kin Chung Fong
US
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Patent
Atlas literature
Patent
US 9,945,728Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a single photon detector according to an embodiment of the present invention; [0027]
FIG. 2 is a block diagram of a pulse detector according to an embodiment of the present invention; [0028]
FIG. 3 B is a schematic side view of a graphene sheet sandwiched between two layers of hexagonal boron nitride, according to an embodiment of the present …
FIG. 4 is a block diagram of a Johnson noise measuring circuit according to an embodiment of the present invention; [0033]
FIG. 5 is a schematic diagram of a front end circuit according to an embodiment of the present invention; [0034]
FIG. 6 is a graph of temperature probability distributions according to an embodiment of the present invention; and [0035]
FIG. 7 is a graph of quantum efficiency as a function of dark count rate, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photon detector comprising: a waveguide configured to guide infrared electromagnetic waves, in a mode having an evanescent field extending outside of the waveguide; a graphene sheet having two contacts and configured: to be coupled to the evanescent field; and to undergo, when a photon is absorbed by the graphene sheet, an increase in temperature and a subsequent decrease in temperature, resulting in a corresponding increase in Johnson noise at the two contacts and a subsequent decrease in Johnson noise at the two contacts; and a circuit connected to the two contacts, the circuit configured to detect the increase in Johnson noise. Currently amended
The photon detector of claim 1, wherein the graphene sheet has an electron mobility of more than 100, 000 cm 2 NV/s. Original
The photon detector of claim 1, wherein the graphene sheet substantially has the shape of a rectangle, the rectangle having a length and a width, the length being greater than or equal to the width. Original
The photon detector of claim 1, wherein the waveguide comprises a reflector. Original
The photon detector of claim 1 wherein the waveguide is on a substantially flat substrate, in a layer on a surface of the substrate, the layer having a thickness greater than 10 nanometers and less than 2 microns. Original
The photon detector of claim 1, comprising a first layer of hexagonal boron nitride immediately adjacent a first surface of the graphene sheet, and a second layer of hexagonal boron nitride immediately adjacent a second surface of the graphene sheet. Currently amended
The photon detector of claim 1, wherein the circuit comprises an amplifier connected to the two contacts. Original
The photon detector of claim 1, wherein the graphene sheet consists of a single atomic layer of graphene. Previously presented
The photon detector of claim 1, wherein the graphene. Previously presented
The photon detector of claim 1, further graphene sheet to a temperature below 4 K. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based infrared single photon detector
Materials described outside the worked examples.
graphene sheet
C
infrared waveguide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph of temperature probability distributions according to an embodiment of the present invention; and [0035]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene electron mobility claim threshold | ≥ 100000 | C |
Thickness | 100–1000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,945,728Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a single photon detector according to an embodiment of the present invention; [0027]
FIG. 2 is a block diagram of a pulse detector according to an embodiment of the present invention; [0028]
FIG. 3 B is a schematic side view of a graphene sheet sandwiched between two layers of hexagonal boron nitride, according to an embodiment of the present …
FIG. 4 is a block diagram of a Johnson noise measuring circuit according to an embodiment of the present invention; [0033]
FIG. 5 is a schematic diagram of a front end circuit according to an embodiment of the present invention; [0034]
FIG. 6 is a graph of temperature probability distributions according to an embodiment of the present invention; and [0035]
FIG. 7 is a graph of quantum efficiency as a function of dark count rate, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photon detector comprising: a waveguide configured to guide infrared electromagnetic waves, in a mode having an evanescent field extending outside of the waveguide; a graphene sheet having two contacts and configured: to be coupled to the evanescent field; and to undergo, when a photon is absorbed by the graphene sheet, an increase in temperature and a subsequent decrease in temperature, resulting in a corresponding increase in Johnson noise at the two contacts and a subsequent decrease in Johnson noise at the two contacts; and a circuit connected to the two contacts, the circuit configured to detect the increase in Johnson noise. Currently amended
The photon detector of claim 1, wherein the graphene sheet has an electron mobility of more than 100, 000 cm 2 NV/s. Original
The photon detector of claim 1, wherein the graphene sheet substantially has the shape of a rectangle, the rectangle having a length and a width, the length being greater than or equal to the width. Original
The photon detector of claim 1, wherein the waveguide comprises a reflector. Original
The photon detector of claim 1 wherein the waveguide is on a substantially flat substrate, in a layer on a surface of the substrate, the layer having a thickness greater than 10 nanometers and less than 2 microns. Original
The photon detector of claim 1, comprising a first layer of hexagonal boron nitride immediately adjacent a first surface of the graphene sheet, and a second layer of hexagonal boron nitride immediately adjacent a second surface of the graphene sheet. Currently amended
The photon detector of claim 1, wherein the circuit comprises an amplifier connected to the two contacts. Original
The photon detector of claim 1, wherein the graphene sheet consists of a single atomic layer of graphene. Previously presented
The photon detector of claim 1, wherein the graphene. Previously presented
The photon detector of claim 1, further graphene sheet to a temperature below 4 K. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based infrared single photon detector
Materials described outside the worked examples.
graphene sheet
C
infrared waveguide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph of temperature probability distributions according to an embodiment of the present invention; and [0035]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene electron mobility claim threshold | ≥ 100000 | C |
Thickness | 100–1000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,945,728Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a single photon detector according to an embodiment of the present invention; [0027]
FIG. 2 is a block diagram of a pulse detector according to an embodiment of the present invention; [0028]
FIG. 3 B is a schematic side view of a graphene sheet sandwiched between two layers of hexagonal boron nitride, according to an embodiment of the present …
FIG. 4 is a block diagram of a Johnson noise measuring circuit according to an embodiment of the present invention; [0033]
FIG. 5 is a schematic diagram of a front end circuit according to an embodiment of the present invention; [0034]
FIG. 6 is a graph of temperature probability distributions according to an embodiment of the present invention; and [0035]
FIG. 7 is a graph of quantum efficiency as a function of dark count rate, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photon detector comprising: a waveguide configured to guide infrared electromagnetic waves, in a mode having an evanescent field extending outside of the waveguide; a graphene sheet having two contacts and configured: to be coupled to the evanescent field; and to undergo, when a photon is absorbed by the graphene sheet, an increase in temperature and a subsequent decrease in temperature, resulting in a corresponding increase in Johnson noise at the two contacts and a subsequent decrease in Johnson noise at the two contacts; and a circuit connected to the two contacts, the circuit configured to detect the increase in Johnson noise. Currently amended
The photon detector of claim 1, wherein the graphene sheet has an electron mobility of more than 100, 000 cm 2 NV/s. Original
The photon detector of claim 1, wherein the graphene sheet substantially has the shape of a rectangle, the rectangle having a length and a width, the length being greater than or equal to the width. Original
The photon detector of claim 1, wherein the waveguide comprises a reflector. Original
The photon detector of claim 1 wherein the waveguide is on a substantially flat substrate, in a layer on a surface of the substrate, the layer having a thickness greater than 10 nanometers and less than 2 microns. Original
The photon detector of claim 1, comprising a first layer of hexagonal boron nitride immediately adjacent a first surface of the graphene sheet, and a second layer of hexagonal boron nitride immediately adjacent a second surface of the graphene sheet. Currently amended
The photon detector of claim 1, wherein the circuit comprises an amplifier connected to the two contacts. Original
The photon detector of claim 1, wherein the graphene sheet consists of a single atomic layer of graphene. Previously presented
The photon detector of claim 1, wherein the graphene. Previously presented
The photon detector of claim 1, further graphene sheet to a temperature below 4 K. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based infrared single photon detector
Materials described outside the worked examples.
graphene sheet
C
infrared waveguide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph of temperature probability distributions according to an embodiment of the present invention; and [0035]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene electron mobility claim threshold | ≥ 100000 | C |
Thickness | 100–1000 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,945,728Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a single photon detector according to an embodiment of the present invention; [0027]
FIG. 2 is a block diagram of a pulse detector according to an embodiment of the present invention; [0028]
FIG. 3 B is a schematic side view of a graphene sheet sandwiched between two layers of hexagonal boron nitride, according to an embodiment of the present …
FIG. 4 is a block diagram of a Johnson noise measuring circuit according to an embodiment of the present invention; [0033]
FIG. 5 is a schematic diagram of a front end circuit according to an embodiment of the present invention; [0034]
FIG. 6 is a graph of temperature probability distributions according to an embodiment of the present invention; and [0035]
FIG. 7 is a graph of quantum efficiency as a function of dark count rate, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photon detector comprising: a waveguide configured to guide infrared electromagnetic waves, in a mode having an evanescent field extending outside of the waveguide; a graphene sheet having two contacts and configured: to be coupled to the evanescent field; and to undergo, when a photon is absorbed by the graphene sheet, an increase in temperature and a subsequent decrease in temperature, resulting in a corresponding increase in Johnson noise at the two contacts and a subsequent decrease in Johnson noise at the two contacts; and a circuit connected to the two contacts, the circuit configured to detect the increase in Johnson noise. Currently amended
The photon detector of claim 1, wherein the graphene sheet has an electron mobility of more than 100, 000 cm 2 NV/s. Original
The photon detector of claim 1, wherein the graphene sheet substantially has the shape of a rectangle, the rectangle having a length and a width, the length being greater than or equal to the width. Original
The photon detector of claim 1, wherein the waveguide comprises a reflector. Original
The photon detector of claim 1 wherein the waveguide is on a substantially flat substrate, in a layer on a surface of the substrate, the layer having a thickness greater than 10 nanometers and less than 2 microns. Original
The photon detector of claim 1, comprising a first layer of hexagonal boron nitride immediately adjacent a first surface of the graphene sheet, and a second layer of hexagonal boron nitride immediately adjacent a second surface of the graphene sheet. Currently amended
The photon detector of claim 1, wherein the circuit comprises an amplifier connected to the two contacts. Original
The photon detector of claim 1, wherein the graphene sheet consists of a single atomic layer of graphene. Previously presented
The photon detector of claim 1, wherein the graphene. Previously presented
The photon detector of claim 1, further graphene sheet to a temperature below 4 K. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based infrared single photon detector
Materials described outside the worked examples.
graphene sheet
C
infrared waveguide
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 is a graph of temperature probability distributions according to an embodiment of the present invention; and [0035]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene electron mobility claim threshold | ≥ 100000 | C |
Thickness | 100–1000 nm |
Related documents with shared materials, methods, properties, or citations.
hexagonal boron nitride
h-BN
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon
Si
FIG. 7 is a graph of quantum efficiency as a function of dark count rate, according to an embodiment of the present invention.
| — |
Thickness | 4–40 nm | — |
Duration | 10–15 minutes | — |
Thickness | 1–100 µm | — |
Thickness | ≤ 2 µm | — |
Temperature | ≤ 4 K | — |
Thickness | ≥ 50 nm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 100000 cm | — |
JOSEPHSON JUNCTION READOUT FOR GRAPHENE-BASED SINGLE PHOTON DETECTOR
hexagonal boron nitride
h-BN
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon
Si
FIG. 7 is a graph of quantum efficiency as a function of dark count rate, according to an embodiment of the present invention.
| — |
Thickness | 4–40 nm | — |
Duration | 10–15 minutes | — |
Thickness | 1–100 µm | — |
Thickness | ≤ 2 µm | — |
Temperature | ≤ 4 K | — |
Thickness | ≥ 50 nm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 100000 cm | — |
JOSEPHSON JUNCTION READOUT FOR GRAPHENE-BASED SINGLE PHOTON DETECTOR
hexagonal boron nitride
h-BN
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon
Si
FIG. 7 is a graph of quantum efficiency as a function of dark count rate, according to an embodiment of the present invention.
| — |
Thickness | 4–40 nm | — |
Duration | 10–15 minutes | — |
Thickness | 1–100 µm | — |
Thickness | ≤ 2 µm | — |
Temperature | ≤ 4 K | — |
Thickness | ≥ 50 nm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 100000 cm | — |
JOSEPHSON JUNCTION READOUT FOR GRAPHENE-BASED SINGLE PHOTON DETECTOR
hexagonal boron nitride
h-BN
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon
Si
FIG. 7 is a graph of quantum efficiency as a function of dark count rate, according to an embodiment of the present invention.
| — |
Thickness | 4–40 nm | — |
Duration | 10–15 minutes | — |
Thickness | 1–100 µm | — |
Thickness | ≤ 2 µm | — |
Temperature | ≤ 4 K | — |
Thickness | ≥ 50 nm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 100000 cm | — |
JOSEPHSON JUNCTION READOUT FOR GRAPHENE-BASED SINGLE PHOTON DETECTOR