OF INVENTION

Byung Jin CHO

Patent

Atlas literature

Patent

US 8,637,851

OF INVENTION

Byung Jin CHO

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 shows the structure of a graphene device according to one embodiment of the present invention; [000 24]

FIG. 2

FIG. 2A shows the simulation results of the band diagram of the graphene device of

FIG. 3

performance graph

FIG. 3 shows the current density of the graphene device of

FIG. 4

performance graph

FIG. 4B is a graph showing a comparison of I -V characteristics between a graphene device according to one embodiment of the present invention and a control …

FIG. 5

FIG. 5 shows the structure of a graphene device according to another embodiment of the present invention; [0003 0]

FIG. 6

FIG. 6 shows the structure of a graphene device according to yet another embodiment of the present invention; [00031]

FIG. 7

FIG. 7 shows the structure of a graphene device according to yet another embodiment of the present invention; [00032]

FIG. 8

FIG. 8 shows the structure of a graphene device according to yet another embodiment of the present invention; [00033]

FIG. 9

FIG. 9 shows the structure of a graphene device according to yet another embodiment of the present invention; and [00034]

FIG. 10

FIG. 10 shows the structure of a graphene device according to yet another embodiment of the present invention.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

3 independent · 12 dependent

1
IndependentChigh-K dielectric spacer materialgraphene field-effect transistor with physical gap (source side)
A graphene device comprising: a source and a drain, formed on a substrate; a stack structure having a graphene channel formed on the substrate between the source and the drain, a dielectric layer on the graphene channel, and a gate formed on the dielectric layer; and a high-K spacer made of a dielectric material on the left and right sides of the stack structure, in which any one or more of the source and the drain are spaced apart from the graphene channel by a physical gap extending in a planar direction, wherein the physical g ap includes a thickness of the high-K spacer and an empty space spaced apart from the graphene channel, wherein when a voltage lower than the threshold voltage of the device is applied to the gate, the oﬀ-current of the device is reduced due to the physical gap, and when a voltage higher than the threshold voltage is applied to the gate, a fringing ﬁeld is formed by the high-K spacer, so that the energy band of the substrate region under the high K-spacer is inversed and the eﬀective length of the physical gap is reduced to increase the on-current of the device because of a breakdown occurring in the substrate region corresponding to the physical gap. currently amended
1. 4
  Dependent← claim 1high-K dielectric spacer materialgraphene field-effect transistor with physical gap (source side)
  (Previously Amended) The graphene device of claim 1, wherein the high-K spacer is made of a material having a dielectric constant of 3.9 or higher.
2. 5
  Dependent← claim 1semiconductor substrate materialgraphene field-effect transistor with physical gap (source side)
  The graphene device of claim 1, wherein the substrate is made of a semiconductor material selected from among silicon (Si), germanium (Ge), a I II-V group compound (GaAs, InP, etc.), and combinations thereof.
3. 6
  Dependent← claim 1graphene field-effect transistor with physical gap (source side)
  The graphene device of claim 1, wherein the substrate comprises an SOI structure.
4. 7
  Dependent← claim 1graphene field-effect transistor with physical gap (source side)
  The graphene device of claim 1, wherein the substrate is made of an intrinsic semiconductor material or a semiconductor material doped with an n- or p-type impurity.
5. 8
  Dependent← claim 1graphene field-effect transistor with physical gap (source side)
  The graphene device of claim 1, wherein the source and the drain are doped with p+ and p+, n+ and n+, n+ and p+, or p+ and n+, respectively, wherein p+ means that the source or the drain is doped with a p-type impurity so that the impurity concentration thereof is higher than that of the substrate, and n+ means that the source or the drain is doped with an n-type impurity so that the impurity concentration is higher than that of the substrate.
6. 9
  Dependent← claim 1metal silicidegraphene field-effect transistor with physical gap (source side)
  The graphene device of claim 1, wherein the upper portion of the source or the drain is treated with a metal to form a silicon compound (silicide).
7. 11
  Dependent← claim 1graphene field-effect transistor with physical gap (source side)
  The graphene device of claim 1, wherein the source is spaced apart from the graphene channel by the physical gap present between the source and the graphene channel, and the drain is extended to the graphene channel so as to come into contact with the graphene channel.
8. 12
  Dependent← claim 1graphene field-effect transistor with physical gap (drain side)
  (Previously Amended) The graphene device of claim 1, wherein the drain is spaced apart from the graphene channel by the physical gap present between the drain and the graphene channel, and the source is extended to the graphene channel so as to come into contact with the graphene channel.
9. 13
  Dependent← claim 1graphene field-effect transistor with physical gap (both source and drain side)
  The graphene device of claim 1, wherein both the source and the drain are spaced apart from the graphene channel by the physical gap.
10. 14
  Dependent← claim 1Cgraphene field-effect transistor with physical gap (source side)
  The graphene device of claim 1, wherein the graphene channel includes a plurality of graphene channels spaced apart from each other by a physical gap.
2
Independent
canceled
3
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene field-effect transistor with physical gap (source side)

high-K dielectric spacer materialspacer

gategate

gate_dielectricgate dielectric

Cchannel

draindrain

sourcesource

Materials

Materials described outside the worked examples.

graphene

Channel Material

high-K dielectric spacer material

Spacer Dielectric

hafnium dioxide

HfO₂

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

device performance measurement

Device Performance Measurement

FIG. 3 shows the current density of the graphene device of

Figure references

FIG. 3

graphenegraphene

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
on/off current ratio >= 10^7 from simulation	≥ 10000000 dimensionless	C
50% higher subthreshold slope vs. control (simulated)	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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