Patent
US 9,812,604PHOTOSENSING DEVICE WITH GRAPHENE
KLAUS Y.J. HSU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,812,604Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a cross-sectional view taken along line 1B-1 B in FIG. lA. [0008]
FIG. 2A is a perspective view of an array of photosensing devices in accordance with a second embodiment. [0009]
FIG. 3B shows a graph of photovoltage responsivity vs. incident power of a graphene- semiconductor heterojunction. [0012]
FIG. 4 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor heterojunction. [0013]
FIG. 5 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor 15 heterojunction. [0014]
FIG. 6B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. 20 [0016]
FIG. 7B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. Page 2 of 18 [0018]
FIG. 8 is a graph showing the process of manufacturing of graphene-sensing heterojunction of a graphene-semiconductor heterojunction. [0019]
FIG. 9 shows a block diagram of a module using the photosensing device of FIG s. l A or 2A. 5 [0020]
FIG. 10 shows a block diagram of a system using the photosensing device of FIG s. l A or 2A. [0021]
FIG. 11 is a corss-sectionalview of a photosensing device in accordance with another embodiment. [0022]
FIG. 12 is a cross-sectional view of a photosensing device in accordance with another 10 embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(previously amended) A photosensing device, comprising: a substrate a gate insulation layer formed on the substrate; a source region and a drain region formed on the substrate; a graphene-silicon heterojunction positioned on the gate insulation layer, wherein the graphene-silicon heterojunction comprises a graphene layer and a gate layer; wherein the graphene layer is positioned between the gate insulation layer and the gate layer.
(previously amended) The photosensing device of claim 1, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 1, wherein the substrate is a flexible plastic substrate.
(previously amended) The photosensing device of claim 1, wherein the substrate is an amorphous silicon on glass substrate.
(previously amended) The photosensing device of claim 1, wherein the gate insulation layer is a silicon dioxide.
(previously amended) The photosensing device of according to claim 1, wherein the gate insulation layer is a high-k dielectric material.
(previously amended) The photosensing device of according to claim 1, wherein the source Page 2 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: and/or drain region has a doping concentration larger than 1020/cm3.
(previously amended) The photosensing device of claim 1, wherein the graphene layer is formed by chemical vapor deposition or graphene transfer.
(previously amended) The photosensing device of claim 1, wherein the graphene layer is placed directly on the gate insulation layer.
(previously amended) The photosensing device of claim 1, wherein the gate layer is placed directly on the graphene layer.
(previously amended) The photosensing device of claim 1, wherein the gate layer is made of polycrystalline silicon material.
(previously amended) The photosensing device of claim 1, wherein the gate layer is made of amorphous silicon material.
(previously amended) A photosensing device, comprising: a substrate; a gate insulation layer formed on the substrate; a source and drain region formed on the substrate; a graphene layer positioned on the gate insulation layer; and a gate layer positioned on the graphene layer; wherein the graphene layer and the gate layer together form a graphene-se mi conductor Page 3 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: heteroj unction.
(previously amended) The photosensing device of claim 13, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 13, wherein the substrate is a flexible plastic substrate.
(previously amended) The photosensing device of claim 13, wherein the substrate is an amorphous silicon on glass substrate.
The photosensing device of claim 13, wherein the gate insulation layer is a silicon dioxide la y er.
(previously amended) The photosensing device of claim 13, wherein the source and/or drain region has a doping concentration larger than 1020/cm3.
(previously amended) The photosensing device of claim 13, wherein the graphene layer is placed directly on the gate insulation layer.
(previously amended) The photosensing device of claim 13, wherein the gate layer is placed directly on the graphene layer.
A photosensing device, comprising: a semiconductor substrate; a graphene layer directly positioned on the substrate, and the graphene la y er and semiconductor Page 4 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: substrate form a heteroj unction photodiode; [[and]] a MOSFET device including a gate layer, a gate insulation layer, a source region, and a drain region; wherein the gate layer of the MOSFET device is electrically connected to the graphene layer.
(previously amended) The photosensing device of claim 21, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 21, wherein the substrate is a flexible semiconductor substrate.
(previously amended) The photosensing device of claim 21, wherein the substrate is an amorphous silicon on glass substrate.
The photosensing device of claim 21, wherein the photosesing-devie empriscs-an-additional-gate insulation layer is made of [[a]] silicon dioxide.
The photosensing device of claim 21, wherein the photosensig-devie m a ag ate insulation layer is made of a high-k dielectric material.
(previously amended) The photosensing device semiconductor material and the graphene is n-type. of claim 21, wherein the source and/or drain 1020/cm3. of claim 21, wherein the substrate is an n-type of claim 21, wherein the substrate is a p-type
(previously amended) The photosensing device region has a doping concentration larger than
(previously amended) The photosensing device semiconductor material and the graphene is p-type.
Layer stacks claimed or described, ordered top of device to substrate.
photosensing device with graphene-silicon heterojunction (bottom-gate FET type, claim 1)
photosensing device with graphene-semiconductor heterojunction (claim 13)
Materials described outside the worked examples.
graphene
gate layer (semiconductor)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B shows a graph of photovoltage responsivity vs. incident power of a graphene- semiconductor heterojunction. [0012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Uv Vis Absorbance At Wavelength | 2.3 % | graphene |
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GRAPHENE-METAL BONDING STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE GRAPHENE-METAL BONDING STRUCTURE
GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME
Patent
Atlas literature
Patent
US 9,812,604Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a cross-sectional view taken along line 1B-1 B in FIG. lA. [0008]
FIG. 2A is a perspective view of an array of photosensing devices in accordance with a second embodiment. [0009]
FIG. 3B shows a graph of photovoltage responsivity vs. incident power of a graphene- semiconductor heterojunction. [0012]
FIG. 4 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor heterojunction. [0013]
FIG. 5 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor 15 heterojunction. [0014]
FIG. 6B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. 20 [0016]
FIG. 7B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. Page 2 of 18 [0018]
FIG. 8 is a graph showing the process of manufacturing of graphene-sensing heterojunction of a graphene-semiconductor heterojunction. [0019]
FIG. 9 shows a block diagram of a module using the photosensing device of FIG s. l A or 2A. 5 [0020]
FIG. 10 shows a block diagram of a system using the photosensing device of FIG s. l A or 2A. [0021]
FIG. 11 is a corss-sectionalview of a photosensing device in accordance with another embodiment. [0022]
FIG. 12 is a cross-sectional view of a photosensing device in accordance with another 10 embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(previously amended) A photosensing device, comprising: a substrate a gate insulation layer formed on the substrate; a source region and a drain region formed on the substrate; a graphene-silicon heterojunction positioned on the gate insulation layer, wherein the graphene-silicon heterojunction comprises a graphene layer and a gate layer; wherein the graphene layer is positioned between the gate insulation layer and the gate layer.
(previously amended) The photosensing device of claim 1, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 1, wherein the substrate is a flexible plastic substrate.
(previously amended) The photosensing device of claim 1, wherein the substrate is an amorphous silicon on glass substrate.
(previously amended) The photosensing device of claim 1, wherein the gate insulation layer is a silicon dioxide.
(previously amended) The photosensing device of according to claim 1, wherein the gate insulation layer is a high-k dielectric material.
(previously amended) The photosensing device of according to claim 1, wherein the source Page 2 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: and/or drain region has a doping concentration larger than 1020/cm3.
(previously amended) The photosensing device of claim 1, wherein the graphene layer is formed by chemical vapor deposition or graphene transfer.
(previously amended) The photosensing device of claim 1, wherein the graphene layer is placed directly on the gate insulation layer.
(previously amended) The photosensing device of claim 1, wherein the gate layer is placed directly on the graphene layer.
(previously amended) The photosensing device of claim 1, wherein the gate layer is made of polycrystalline silicon material.
(previously amended) The photosensing device of claim 1, wherein the gate layer is made of amorphous silicon material.
(previously amended) A photosensing device, comprising: a substrate; a gate insulation layer formed on the substrate; a source and drain region formed on the substrate; a graphene layer positioned on the gate insulation layer; and a gate layer positioned on the graphene layer; wherein the graphene layer and the gate layer together form a graphene-se mi conductor Page 3 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: heteroj unction.
(previously amended) The photosensing device of claim 13, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 13, wherein the substrate is a flexible plastic substrate.
(previously amended) The photosensing device of claim 13, wherein the substrate is an amorphous silicon on glass substrate.
The photosensing device of claim 13, wherein the gate insulation layer is a silicon dioxide la y er.
(previously amended) The photosensing device of claim 13, wherein the source and/or drain region has a doping concentration larger than 1020/cm3.
(previously amended) The photosensing device of claim 13, wherein the graphene layer is placed directly on the gate insulation layer.
(previously amended) The photosensing device of claim 13, wherein the gate layer is placed directly on the graphene layer.
A photosensing device, comprising: a semiconductor substrate; a graphene layer directly positioned on the substrate, and the graphene la y er and semiconductor Page 4 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: substrate form a heteroj unction photodiode; [[and]] a MOSFET device including a gate layer, a gate insulation layer, a source region, and a drain region; wherein the gate layer of the MOSFET device is electrically connected to the graphene layer.
(previously amended) The photosensing device of claim 21, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 21, wherein the substrate is a flexible semiconductor substrate.
(previously amended) The photosensing device of claim 21, wherein the substrate is an amorphous silicon on glass substrate.
The photosensing device of claim 21, wherein the photosesing-devie empriscs-an-additional-gate insulation layer is made of [[a]] silicon dioxide.
The photosensing device of claim 21, wherein the photosensig-devie m a ag ate insulation layer is made of a high-k dielectric material.
(previously amended) The photosensing device semiconductor material and the graphene is n-type. of claim 21, wherein the source and/or drain 1020/cm3. of claim 21, wherein the substrate is an n-type of claim 21, wherein the substrate is a p-type
(previously amended) The photosensing device region has a doping concentration larger than
(previously amended) The photosensing device semiconductor material and the graphene is p-type.
Layer stacks claimed or described, ordered top of device to substrate.
photosensing device with graphene-silicon heterojunction (bottom-gate FET type, claim 1)
photosensing device with graphene-semiconductor heterojunction (claim 13)
Materials described outside the worked examples.
graphene
gate layer (semiconductor)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B shows a graph of photovoltage responsivity vs. incident power of a graphene- semiconductor heterojunction. [0012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Uv Vis Absorbance At Wavelength | 2.3 % | graphene |
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GRAPHENE-METAL BONDING STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE GRAPHENE-METAL BONDING STRUCTURE
GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME
Patent
Atlas literature
Patent
US 9,812,604Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a cross-sectional view taken along line 1B-1 B in FIG. lA. [0008]
FIG. 2A is a perspective view of an array of photosensing devices in accordance with a second embodiment. [0009]
FIG. 3B shows a graph of photovoltage responsivity vs. incident power of a graphene- semiconductor heterojunction. [0012]
FIG. 4 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor heterojunction. [0013]
FIG. 5 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor 15 heterojunction. [0014]
FIG. 6B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. 20 [0016]
FIG. 7B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. Page 2 of 18 [0018]
FIG. 8 is a graph showing the process of manufacturing of graphene-sensing heterojunction of a graphene-semiconductor heterojunction. [0019]
FIG. 9 shows a block diagram of a module using the photosensing device of FIG s. l A or 2A. 5 [0020]
FIG. 10 shows a block diagram of a system using the photosensing device of FIG s. l A or 2A. [0021]
FIG. 11 is a corss-sectionalview of a photosensing device in accordance with another embodiment. [0022]
FIG. 12 is a cross-sectional view of a photosensing device in accordance with another 10 embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(previously amended) A photosensing device, comprising: a substrate a gate insulation layer formed on the substrate; a source region and a drain region formed on the substrate; a graphene-silicon heterojunction positioned on the gate insulation layer, wherein the graphene-silicon heterojunction comprises a graphene layer and a gate layer; wherein the graphene layer is positioned between the gate insulation layer and the gate layer.
(previously amended) The photosensing device of claim 1, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 1, wherein the substrate is a flexible plastic substrate.
(previously amended) The photosensing device of claim 1, wherein the substrate is an amorphous silicon on glass substrate.
(previously amended) The photosensing device of claim 1, wherein the gate insulation layer is a silicon dioxide.
(previously amended) The photosensing device of according to claim 1, wherein the gate insulation layer is a high-k dielectric material.
(previously amended) The photosensing device of according to claim 1, wherein the source Page 2 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: and/or drain region has a doping concentration larger than 1020/cm3.
(previously amended) The photosensing device of claim 1, wherein the graphene layer is formed by chemical vapor deposition or graphene transfer.
(previously amended) The photosensing device of claim 1, wherein the graphene layer is placed directly on the gate insulation layer.
(previously amended) The photosensing device of claim 1, wherein the gate layer is placed directly on the graphene layer.
(previously amended) The photosensing device of claim 1, wherein the gate layer is made of polycrystalline silicon material.
(previously amended) The photosensing device of claim 1, wherein the gate layer is made of amorphous silicon material.
(previously amended) A photosensing device, comprising: a substrate; a gate insulation layer formed on the substrate; a source and drain region formed on the substrate; a graphene layer positioned on the gate insulation layer; and a gate layer positioned on the graphene layer; wherein the graphene layer and the gate layer together form a graphene-se mi conductor Page 3 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: heteroj unction.
(previously amended) The photosensing device of claim 13, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 13, wherein the substrate is a flexible plastic substrate.
(previously amended) The photosensing device of claim 13, wherein the substrate is an amorphous silicon on glass substrate.
The photosensing device of claim 13, wherein the gate insulation layer is a silicon dioxide la y er.
(previously amended) The photosensing device of claim 13, wherein the source and/or drain region has a doping concentration larger than 1020/cm3.
(previously amended) The photosensing device of claim 13, wherein the graphene layer is placed directly on the gate insulation layer.
(previously amended) The photosensing device of claim 13, wherein the gate layer is placed directly on the graphene layer.
A photosensing device, comprising: a semiconductor substrate; a graphene layer directly positioned on the substrate, and the graphene la y er and semiconductor Page 4 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: substrate form a heteroj unction photodiode; [[and]] a MOSFET device including a gate layer, a gate insulation layer, a source region, and a drain region; wherein the gate layer of the MOSFET device is electrically connected to the graphene layer.
(previously amended) The photosensing device of claim 21, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 21, wherein the substrate is a flexible semiconductor substrate.
(previously amended) The photosensing device of claim 21, wherein the substrate is an amorphous silicon on glass substrate.
The photosensing device of claim 21, wherein the photosesing-devie empriscs-an-additional-gate insulation layer is made of [[a]] silicon dioxide.
The photosensing device of claim 21, wherein the photosensig-devie m a ag ate insulation layer is made of a high-k dielectric material.
(previously amended) The photosensing device semiconductor material and the graphene is n-type. of claim 21, wherein the source and/or drain 1020/cm3. of claim 21, wherein the substrate is an n-type of claim 21, wherein the substrate is a p-type
(previously amended) The photosensing device region has a doping concentration larger than
(previously amended) The photosensing device semiconductor material and the graphene is p-type.
Layer stacks claimed or described, ordered top of device to substrate.
photosensing device with graphene-silicon heterojunction (bottom-gate FET type, claim 1)
photosensing device with graphene-semiconductor heterojunction (claim 13)
Materials described outside the worked examples.
graphene
gate layer (semiconductor)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B shows a graph of photovoltage responsivity vs. incident power of a graphene- semiconductor heterojunction. [0012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Uv Vis Absorbance At Wavelength | 2.3 % | graphene |
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GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME
Patent
Atlas literature
Patent
US 9,812,604Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B is a cross-sectional view taken along line 1B-1 B in FIG. lA. [0008]
FIG. 2A is a perspective view of an array of photosensing devices in accordance with a second embodiment. [0009]
FIG. 3B shows a graph of photovoltage responsivity vs. incident power of a graphene- semiconductor heterojunction. [0012]
FIG. 4 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor heterojunction. [0013]
FIG. 5 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor 15 heterojunction. [0014]
FIG. 6B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. 20 [0016]
FIG. 7B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. Page 2 of 18 [0018]
FIG. 8 is a graph showing the process of manufacturing of graphene-sensing heterojunction of a graphene-semiconductor heterojunction. [0019]
FIG. 9 shows a block diagram of a module using the photosensing device of FIG s. l A or 2A. 5 [0020]
FIG. 10 shows a block diagram of a system using the photosensing device of FIG s. l A or 2A. [0021]
FIG. 11 is a corss-sectionalview of a photosensing device in accordance with another embodiment. [0022]
FIG. 12 is a cross-sectional view of a photosensing device in accordance with another 10 embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(previously amended) A photosensing device, comprising: a substrate a gate insulation layer formed on the substrate; a source region and a drain region formed on the substrate; a graphene-silicon heterojunction positioned on the gate insulation layer, wherein the graphene-silicon heterojunction comprises a graphene layer and a gate layer; wherein the graphene layer is positioned between the gate insulation layer and the gate layer.
(previously amended) The photosensing device of claim 1, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 1, wherein the substrate is a flexible plastic substrate.
(previously amended) The photosensing device of claim 1, wherein the substrate is an amorphous silicon on glass substrate.
(previously amended) The photosensing device of claim 1, wherein the gate insulation layer is a silicon dioxide.
(previously amended) The photosensing device of according to claim 1, wherein the gate insulation layer is a high-k dielectric material.
(previously amended) The photosensing device of according to claim 1, wherein the source Page 2 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: and/or drain region has a doping concentration larger than 1020/cm3.
(previously amended) The photosensing device of claim 1, wherein the graphene layer is formed by chemical vapor deposition or graphene transfer.
(previously amended) The photosensing device of claim 1, wherein the graphene layer is placed directly on the gate insulation layer.
(previously amended) The photosensing device of claim 1, wherein the gate layer is placed directly on the graphene layer.
(previously amended) The photosensing device of claim 1, wherein the gate layer is made of polycrystalline silicon material.
(previously amended) The photosensing device of claim 1, wherein the gate layer is made of amorphous silicon material.
(previously amended) A photosensing device, comprising: a substrate; a gate insulation layer formed on the substrate; a source and drain region formed on the substrate; a graphene layer positioned on the gate insulation layer; and a gate layer positioned on the graphene layer; wherein the graphene layer and the gate layer together form a graphene-se mi conductor Page 3 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: heteroj unction.
(previously amended) The photosensing device of claim 13, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 13, wherein the substrate is a flexible plastic substrate.
(previously amended) The photosensing device of claim 13, wherein the substrate is an amorphous silicon on glass substrate.
The photosensing device of claim 13, wherein the gate insulation layer is a silicon dioxide la y er.
(previously amended) The photosensing device of claim 13, wherein the source and/or drain region has a doping concentration larger than 1020/cm3.
(previously amended) The photosensing device of claim 13, wherein the graphene layer is placed directly on the gate insulation layer.
(previously amended) The photosensing device of claim 13, wherein the gate layer is placed directly on the graphene layer.
A photosensing device, comprising: a semiconductor substrate; a graphene layer directly positioned on the substrate, and the graphene la y er and semiconductor Page 4 of 11 App l e. No. 14/659,273 Reply to Office Action of Attorney Docket No.: substrate form a heteroj unction photodiode; [[and]] a MOSFET device including a gate layer, a gate insulation layer, a source region, and a drain region; wherein the gate layer of the MOSFET device is electrically connected to the graphene layer.
(previously amended) The photosensing device of claim 21, wherein the substrate is a silicon substrate.
(previously amended) The photosensing device of claim 21, wherein the substrate is a flexible semiconductor substrate.
(previously amended) The photosensing device of claim 21, wherein the substrate is an amorphous silicon on glass substrate.
The photosensing device of claim 21, wherein the photosesing-devie empriscs-an-additional-gate insulation layer is made of [[a]] silicon dioxide.
The photosensing device of claim 21, wherein the photosensig-devie m a ag ate insulation layer is made of a high-k dielectric material.
(previously amended) The photosensing device semiconductor material and the graphene is n-type. of claim 21, wherein the source and/or drain 1020/cm3. of claim 21, wherein the substrate is an n-type of claim 21, wherein the substrate is a p-type
(previously amended) The photosensing device region has a doping concentration larger than
(previously amended) The photosensing device semiconductor material and the graphene is p-type.
Layer stacks claimed or described, ordered top of device to substrate.
photosensing device with graphene-silicon heterojunction (bottom-gate FET type, claim 1)
photosensing device with graphene-semiconductor heterojunction (claim 13)
Materials described outside the worked examples.
graphene
gate layer (semiconductor)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B shows a graph of photovoltage responsivity vs. incident power of a graphene- semiconductor heterojunction. [0012]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Uv Vis Absorbance At Wavelength | 2.3 % | graphene |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-METAL BONDING STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE GRAPHENE-METAL BONDING STRUCTURE
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photosensing device with graphene-semiconductor heterojunction photodiode and MOSFET (claim 21)
graphene-semiconductor heterojunction photodiode (embodiment)
gate insulation layer
silicon substrate
Si
flexible plastic substrate
amorphous silicon on glass substrate
silicon dioxide
SiO₂
high-k dielectric material
polycrystalline silicon
amorphous silicon
semiconductor substrate
flexible semiconductor substrate
polycrystalline silicon (semiconductor layer)
n-type silicon
FIG. 4 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor heterojunction. [0013]
FIG. 5 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor 15 heterojunction. [0014]
FIG. 6B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. 20 [0016]
FIG. 7B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. Page 2 of 18 [0018]
FIG. 8 is a graph showing the process of manufacturing of graphene-sensing heterojunction of a graphene-semiconductor heterojunction. [0019]
photosensing device with graphene-semiconductor heterojunction photodiode and MOSFET (claim 21)
graphene-semiconductor heterojunction photodiode (embodiment)
gate insulation layer
silicon substrate
Si
flexible plastic substrate
amorphous silicon on glass substrate
silicon dioxide
SiO₂
high-k dielectric material
polycrystalline silicon
amorphous silicon
semiconductor substrate
flexible semiconductor substrate
polycrystalline silicon (semiconductor layer)
n-type silicon
FIG. 4 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor heterojunction. [0013]
FIG. 5 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor 15 heterojunction. [0014]
FIG. 6B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. 20 [0016]
FIG. 7B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. Page 2 of 18 [0018]
FIG. 8 is a graph showing the process of manufacturing of graphene-sensing heterojunction of a graphene-semiconductor heterojunction. [0019]
photosensing device with graphene-semiconductor heterojunction photodiode and MOSFET (claim 21)
graphene-semiconductor heterojunction photodiode (embodiment)
gate insulation layer
silicon substrate
Si
flexible plastic substrate
amorphous silicon on glass substrate
silicon dioxide
SiO₂
high-k dielectric material
polycrystalline silicon
amorphous silicon
semiconductor substrate
flexible semiconductor substrate
polycrystalline silicon (semiconductor layer)
n-type silicon
FIG. 4 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor heterojunction. [0013]
FIG. 5 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor 15 heterojunction. [0014]
FIG. 6B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. 20 [0016]
FIG. 7B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. Page 2 of 18 [0018]
FIG. 8 is a graph showing the process of manufacturing of graphene-sensing heterojunction of a graphene-semiconductor heterojunction. [0019]
photosensing device with graphene-semiconductor heterojunction photodiode and MOSFET (claim 21)
graphene-semiconductor heterojunction photodiode (embodiment)
gate insulation layer
silicon substrate
Si
flexible plastic substrate
amorphous silicon on glass substrate
silicon dioxide
SiO₂
high-k dielectric material
polycrystalline silicon
amorphous silicon
semiconductor substrate
flexible semiconductor substrate
polycrystalline silicon (semiconductor layer)
n-type silicon
FIG. 4 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor heterojunction. [0013]
FIG. 5 is a graph showing photovoltage vs. illuminance of a graphene-semiconductor 15 heterojunction. [0014]
FIG. 6B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. 20 [0016]
FIG. 7B is a graph of diagrammatic view showing the sensing of the photovoltage of the photodiodes in FIG s. l A and 1B. Page 2 of 18 [0018]
FIG. 8 is a graph showing the process of manufacturing of graphene-sensing heterojunction of a graphene-semiconductor heterojunction. [0019]