Patent
US 10,815,565METHOD FOR SYNTHESIZING GRAPHENE PATTERN AND METHOD FOR MANUFACTURING ELECTRO-OPTICAL MODULATOR USING THE SAME
Jaehyun PARK
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 10,815,565Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, a graphene thin film 30 is synthesized at an interface of the catalyst block 200 and the growth substrate. In an exemplary embodiment, the graphene …
FIGS. 2A and 2B are cross-sectional views illustrating a method of synthesizing a graphene pattern according to an exemplary embodiment. [0023]
FIGS. 3A and 3B are plan views of a graphene pattern synthesized according to an exemplary embodiment. [0024]
FIGS. 4A to 4F are cross-sectional views illustrating a method for manufacturing an electro-optical modulator according to an exemplary embodiment. [0025]
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a [[gaphene]]graphene pattern, the method comprising: physically adhering a catalyst block including a catalyst material, which is a q amma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate;[[and]] forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containin q ox yq en, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused alon q the flat interface and the g rowth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface. Currently amended
The method of claim 1, wherein physically adhering the catalyst block to the growth substrate includes: chemically cleaning [[at least one of]]the catalyst block, the c rowth substrate, or the catalyst block and the growth substrate [[by]]using Piranha solution; physically cleaning [[at least one of]]the catalyst block, the growth substrate, or the catalyst block and the growth substrate [[by]]using supersonic waves; drying the catalyst block, the c rowth substrate, or the catalyst block and the growth substrate to p rovide a dry catalyst block and a dry c rowth substrate; and bringing the dry catalyst block into contact with the dry growth substrate. Currently amended
The method of claim 1, wherein the carbon source includes hydrocarbon gas, and the growth inhibitor includes oxygen gas. Original
The method of claim 1, wherein the growth substrate comprises a passivation layer which contacts the catalyst material and forms the flat interface between the catalyst material and the growth substrate. New
Canceled
Canceled
The method of claim 4, wherein a concentration of the growth inhibitor to the carbon source is equal to or more than 1/1 0 6. Original
A method for synthesizing a graphene pattern, the method comprising: p rovidin a c rowth substrate and a catalyst block havin q a catalyst material disposed on at least a portion thereof; physically adhering the catalyst block to a portion of a growth substrate to form an interface between the catalyst material and the g rowth substrate; and formin q a crap hene thin film selectively at the interface between the catalyst material and the c rowth substrate in an atmos p here includin q a carbon source and a growth inhibitor, wherein the catalyst block includes a first body and a second body, wherein the first body has a shape that p rotrudes [[protruding]]from the second body, and wherein the catalyst block is physically adhered to the growth substrate in a first region to form the interface, and spaced apart from the growth substrate in a second region, and spaced apart from the growth substrate by a distance in a third region that is smaller than that in the second region. Currently amended
The method of claim 6, wherein the catalyst block and the growth substrate in the third region are se p arated by a distance of [[is]]5 nm to 1 mm. Currently amended
The method of claim 6, wherein the graphene thin film is selectively synthesized in the first region and the third region, and wherein the graphene thin film has a higher conductivity in the first region than i n the third region. Currently amended
The method of claim 6, wherein the second body includes a via portion that is connected to the second region. Currently amended
The method of claim 6, wherein the growth substrate comprises a passivation layer which contacts the catalyst material and forms the interface between the catalyst material and the growth substrate. New
Claims 12-14. Canceled
Canceled
Materials described outside the worked examples.
gamma-alumina thin film
γ-Al₂O₃
graphene thin film
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Effective Channel Width | ≤ 5 nm | C |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,815,565Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, a graphene thin film 30 is synthesized at an interface of the catalyst block 200 and the growth substrate. In an exemplary embodiment, the graphene …
FIGS. 2A and 2B are cross-sectional views illustrating a method of synthesizing a graphene pattern according to an exemplary embodiment. [0023]
FIGS. 3A and 3B are plan views of a graphene pattern synthesized according to an exemplary embodiment. [0024]
FIGS. 4A to 4F are cross-sectional views illustrating a method for manufacturing an electro-optical modulator according to an exemplary embodiment. [0025]
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a [[gaphene]]graphene pattern, the method comprising: physically adhering a catalyst block including a catalyst material, which is a q amma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate;[[and]] forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containin q ox yq en, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused alon q the flat interface and the g rowth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface. Currently amended
The method of claim 1, wherein physically adhering the catalyst block to the growth substrate includes: chemically cleaning [[at least one of]]the catalyst block, the c rowth substrate, or the catalyst block and the growth substrate [[by]]using Piranha solution; physically cleaning [[at least one of]]the catalyst block, the growth substrate, or the catalyst block and the growth substrate [[by]]using supersonic waves; drying the catalyst block, the c rowth substrate, or the catalyst block and the growth substrate to p rovide a dry catalyst block and a dry c rowth substrate; and bringing the dry catalyst block into contact with the dry growth substrate. Currently amended
The method of claim 1, wherein the carbon source includes hydrocarbon gas, and the growth inhibitor includes oxygen gas. Original
The method of claim 1, wherein the growth substrate comprises a passivation layer which contacts the catalyst material and forms the flat interface between the catalyst material and the growth substrate. New
Canceled
Canceled
The method of claim 4, wherein a concentration of the growth inhibitor to the carbon source is equal to or more than 1/1 0 6. Original
A method for synthesizing a graphene pattern, the method comprising: p rovidin a c rowth substrate and a catalyst block havin q a catalyst material disposed on at least a portion thereof; physically adhering the catalyst block to a portion of a growth substrate to form an interface between the catalyst material and the g rowth substrate; and formin q a crap hene thin film selectively at the interface between the catalyst material and the c rowth substrate in an atmos p here includin q a carbon source and a growth inhibitor, wherein the catalyst block includes a first body and a second body, wherein the first body has a shape that p rotrudes [[protruding]]from the second body, and wherein the catalyst block is physically adhered to the growth substrate in a first region to form the interface, and spaced apart from the growth substrate in a second region, and spaced apart from the growth substrate by a distance in a third region that is smaller than that in the second region. Currently amended
The method of claim 6, wherein the catalyst block and the growth substrate in the third region are se p arated by a distance of [[is]]5 nm to 1 mm. Currently amended
The method of claim 6, wherein the graphene thin film is selectively synthesized in the first region and the third region, and wherein the graphene thin film has a higher conductivity in the first region than i n the third region. Currently amended
The method of claim 6, wherein the second body includes a via portion that is connected to the second region. Currently amended
The method of claim 6, wherein the growth substrate comprises a passivation layer which contacts the catalyst material and forms the interface between the catalyst material and the growth substrate. New
Claims 12-14. Canceled
Canceled
Materials described outside the worked examples.
gamma-alumina thin film
γ-Al₂O₃
graphene thin film
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Effective Channel Width | ≤ 5 nm | C |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,815,565Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, a graphene thin film 30 is synthesized at an interface of the catalyst block 200 and the growth substrate. In an exemplary embodiment, the graphene …
FIGS. 2A and 2B are cross-sectional views illustrating a method of synthesizing a graphene pattern according to an exemplary embodiment. [0023]
FIGS. 3A and 3B are plan views of a graphene pattern synthesized according to an exemplary embodiment. [0024]
FIGS. 4A to 4F are cross-sectional views illustrating a method for manufacturing an electro-optical modulator according to an exemplary embodiment. [0025]
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a [[gaphene]]graphene pattern, the method comprising: physically adhering a catalyst block including a catalyst material, which is a q amma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate;[[and]] forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containin q ox yq en, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused alon q the flat interface and the g rowth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface. Currently amended
The method of claim 1, wherein physically adhering the catalyst block to the growth substrate includes: chemically cleaning [[at least one of]]the catalyst block, the c rowth substrate, or the catalyst block and the growth substrate [[by]]using Piranha solution; physically cleaning [[at least one of]]the catalyst block, the growth substrate, or the catalyst block and the growth substrate [[by]]using supersonic waves; drying the catalyst block, the c rowth substrate, or the catalyst block and the growth substrate to p rovide a dry catalyst block and a dry c rowth substrate; and bringing the dry catalyst block into contact with the dry growth substrate. Currently amended
The method of claim 1, wherein the carbon source includes hydrocarbon gas, and the growth inhibitor includes oxygen gas. Original
The method of claim 1, wherein the growth substrate comprises a passivation layer which contacts the catalyst material and forms the flat interface between the catalyst material and the growth substrate. New
Canceled
Canceled
The method of claim 4, wherein a concentration of the growth inhibitor to the carbon source is equal to or more than 1/1 0 6. Original
A method for synthesizing a graphene pattern, the method comprising: p rovidin a c rowth substrate and a catalyst block havin q a catalyst material disposed on at least a portion thereof; physically adhering the catalyst block to a portion of a growth substrate to form an interface between the catalyst material and the g rowth substrate; and formin q a crap hene thin film selectively at the interface between the catalyst material and the c rowth substrate in an atmos p here includin q a carbon source and a growth inhibitor, wherein the catalyst block includes a first body and a second body, wherein the first body has a shape that p rotrudes [[protruding]]from the second body, and wherein the catalyst block is physically adhered to the growth substrate in a first region to form the interface, and spaced apart from the growth substrate in a second region, and spaced apart from the growth substrate by a distance in a third region that is smaller than that in the second region. Currently amended
The method of claim 6, wherein the catalyst block and the growth substrate in the third region are se p arated by a distance of [[is]]5 nm to 1 mm. Currently amended
The method of claim 6, wherein the graphene thin film is selectively synthesized in the first region and the third region, and wherein the graphene thin film has a higher conductivity in the first region than i n the third region. Currently amended
The method of claim 6, wherein the second body includes a via portion that is connected to the second region. Currently amended
The method of claim 6, wherein the growth substrate comprises a passivation layer which contacts the catalyst material and forms the interface between the catalyst material and the growth substrate. New
Claims 12-14. Canceled
Canceled
Materials described outside the worked examples.
gamma-alumina thin film
γ-Al₂O₃
graphene thin film
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Effective Channel Width | ≤ 5 nm | C |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,815,565Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C, a graphene thin film 30 is synthesized at an interface of the catalyst block 200 and the growth substrate. In an exemplary embodiment, the graphene …
FIGS. 2A and 2B are cross-sectional views illustrating a method of synthesizing a graphene pattern according to an exemplary embodiment. [0023]
FIGS. 3A and 3B are plan views of a graphene pattern synthesized according to an exemplary embodiment. [0024]
FIGS. 4A to 4F are cross-sectional views illustrating a method for manufacturing an electro-optical modulator according to an exemplary embodiment. [0025]
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a [[gaphene]]graphene pattern, the method comprising: physically adhering a catalyst block including a catalyst material, which is a q amma-alumina thin film, to a portion of a growth substrate to form a flat interface between the catalyst block and the growth substrate;[[and]] forming a graphene thin film selectively at the flat interface between the catalyst block and the growth substrate in an atmosphere including a carbon source and a growth inhibitor containin q ox yq en, and applying a force to physically separate the catalyst block from the graphene thin film and the growth substrate, wherein carbon atoms from the carbon source are diffused alon q the flat interface and the g rowth inhibitor is substantially blocked by a diffusion barrier formed by the flat interface so that the graphene thin film is selectively formed at the flat interface. Currently amended
The method of claim 1, wherein physically adhering the catalyst block to the growth substrate includes: chemically cleaning [[at least one of]]the catalyst block, the c rowth substrate, or the catalyst block and the growth substrate [[by]]using Piranha solution; physically cleaning [[at least one of]]the catalyst block, the growth substrate, or the catalyst block and the growth substrate [[by]]using supersonic waves; drying the catalyst block, the c rowth substrate, or the catalyst block and the growth substrate to p rovide a dry catalyst block and a dry c rowth substrate; and bringing the dry catalyst block into contact with the dry growth substrate. Currently amended
The method of claim 1, wherein the carbon source includes hydrocarbon gas, and the growth inhibitor includes oxygen gas. Original
The method of claim 1, wherein the growth substrate comprises a passivation layer which contacts the catalyst material and forms the flat interface between the catalyst material and the growth substrate. New
Canceled
Canceled
The method of claim 4, wherein a concentration of the growth inhibitor to the carbon source is equal to or more than 1/1 0 6. Original
A method for synthesizing a graphene pattern, the method comprising: p rovidin a c rowth substrate and a catalyst block havin q a catalyst material disposed on at least a portion thereof; physically adhering the catalyst block to a portion of a growth substrate to form an interface between the catalyst material and the g rowth substrate; and formin q a crap hene thin film selectively at the interface between the catalyst material and the c rowth substrate in an atmos p here includin q a carbon source and a growth inhibitor, wherein the catalyst block includes a first body and a second body, wherein the first body has a shape that p rotrudes [[protruding]]from the second body, and wherein the catalyst block is physically adhered to the growth substrate in a first region to form the interface, and spaced apart from the growth substrate in a second region, and spaced apart from the growth substrate by a distance in a third region that is smaller than that in the second region. Currently amended
The method of claim 6, wherein the catalyst block and the growth substrate in the third region are se p arated by a distance of [[is]]5 nm to 1 mm. Currently amended
The method of claim 6, wherein the graphene thin film is selectively synthesized in the first region and the third region, and wherein the graphene thin film has a higher conductivity in the first region than i n the third region. Currently amended
The method of claim 6, wherein the second body includes a via portion that is connected to the second region. Currently amended
The method of claim 6, wherein the growth substrate comprises a passivation layer which contacts the catalyst material and forms the interface between the catalyst material and the growth substrate. New
Claims 12-14. Canceled
Canceled
Materials described outside the worked examples.
gamma-alumina thin film
γ-Al₂O₃
graphene thin film
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Effective Channel Width | ≤ 5 nm | C |
Thickness |
Related documents with shared materials, methods, properties, or citations.
carbon source
growth inhibitor containing oxygen
passivation layer
hexagonal boron nitride
h-BN
hexagonal boron nitride carbide
h-BNC
hydrocarbon gas
oxygen gas
O₂
silicon
Si
silicon oxide
SiO₂
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
| 5–1000000 nm |
| — |
Duration | 1–30 minutes | — |
— | 0.00001 eV | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 0.33 nm | — |
carbon source
growth inhibitor containing oxygen
passivation layer
hexagonal boron nitride
h-BN
hexagonal boron nitride carbide
h-BNC
hydrocarbon gas
oxygen gas
O₂
silicon
Si
silicon oxide
SiO₂
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
| 5–1000000 nm |
| — |
Duration | 1–30 minutes | — |
— | 0.00001 eV | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 0.33 nm | — |
carbon source
growth inhibitor containing oxygen
passivation layer
hexagonal boron nitride
h-BN
hexagonal boron nitride carbide
h-BNC
hydrocarbon gas
oxygen gas
O₂
silicon
Si
silicon oxide
SiO₂
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
| 5–1000000 nm |
| — |
Duration | 1–30 minutes | — |
— | 0.00001 eV | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 0.33 nm | — |
carbon source
growth inhibitor containing oxygen
passivation layer
hexagonal boron nitride
h-BN
hexagonal boron nitride carbide
h-BNC
hydrocarbon gas
oxygen gas
O₂
silicon
Si
silicon oxide
SiO₂
FIG. 5 is a picture showing the graphene thin film synthesized on the quartz substrate of Example 1. [0026] FIG 6A is an XPS graph of the graphene thin film …
| 5–1000000 nm |
| — |
Duration | 1–30 minutes | — |
— | 0.00001 eV | — |
Thickness | ≤ 5 nm | — |
Thickness | ≥ 0.33 nm | — |