Patent
US 9,799,817JOSEPHSON JUNCTION READOUT FOR GRAPHENE-BASED SINGLE PHOTON DETECTOR
Kin Chung Fong
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,799,817Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a single photon detector, according to an embodiment of the present invention; [0027]
FIG. 2 B is a schematic side view of a graphene sheet sandwiched between two layers of hexagonal boron nitride, according to an embodiment of the present …
FIG. 3 B is a graph of voltage across a Josephson junction and current flowing through the junction at a second temperature, higher than the first temperature, …
FIG. 4 is a block diagram of a pulse detector according to an embodiment of the present invention; [0032]
FIG. 5 is a schematic plan view of a sensor assembly according to an embodiment of the present invention; [0033]
FIG. 6 is a perspective view of a communications system including mobile transceivers according to an embodiment of the present invention; [0034]
FIG. 7 is a graph of critical current probability distributions according to an embodiment of the present invention; [0035]
FIG. 8A is a hybrid schematic diagram and plan view of a portion of a single photon detector, according to an embodiment of the present invention; [0036]
FIG. 9C is a plan view of a portion of a single photon detector, according to an embodiment of the present invention; and [0040]
FIG. 10 is a schematic diagram of a portion of a single photon detector, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photon detector comprising: a graphene sheet; a first conductor connected to the graphene sheet, the first conductor being configured to guide electromagnetic waves to the graphene sheet, to produce an increase in a temperature of the graphene sheet when a photon of the electromagnetic waves is absorbed by the graphene sheet; a Josephson junction adjacent or including the graphene sheet, the Josephson junction having a gap coupled to electrons of the graphene sheet; and a circuit connected to two contacts of the Josephson junction, the circuit configured to detect a decrease in a critical current of the Josephson junction, the decrease corresponding to the increase in the temperature of the graphene sheet.
The photon detector of claim 1, wherein the first conductor is a conductor of a log periodic antenna.
The photon detector of claim 1, wherein the first conductor is one of two superconducting conductors of the Josephson junction.
The photon detector of claim 1, further comprising a second conductor, wherein the first conductor, the graphene sheet, and the second conductor form a microstrip transmission line.
082066 (15-7021-US-CIP)
082066 (15-7021-US-CIP)
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based single photon detector with Josephson junction readout
Materials described outside the worked examples.
graphene sheet
hexagonal boron nitride
hBN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 B is a graph of voltage across a Josephson junction and current flowing through the junction at a second temperature, higher than the first temperature, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility of graphene sheet (high-mobility embodiment) | ≥ 100000 cm2/V/s | graphene sheet |
electron mobility of graphene sheet (lower-mobility embodiment) | 1000 cm2/V/s |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,799,817Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a single photon detector, according to an embodiment of the present invention; [0027]
FIG. 2 B is a schematic side view of a graphene sheet sandwiched between two layers of hexagonal boron nitride, according to an embodiment of the present …
FIG. 3 B is a graph of voltage across a Josephson junction and current flowing through the junction at a second temperature, higher than the first temperature, …
FIG. 4 is a block diagram of a pulse detector according to an embodiment of the present invention; [0032]
FIG. 5 is a schematic plan view of a sensor assembly according to an embodiment of the present invention; [0033]
FIG. 6 is a perspective view of a communications system including mobile transceivers according to an embodiment of the present invention; [0034]
FIG. 7 is a graph of critical current probability distributions according to an embodiment of the present invention; [0035]
FIG. 8A is a hybrid schematic diagram and plan view of a portion of a single photon detector, according to an embodiment of the present invention; [0036]
FIG. 9C is a plan view of a portion of a single photon detector, according to an embodiment of the present invention; and [0040]
FIG. 10 is a schematic diagram of a portion of a single photon detector, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photon detector comprising: a graphene sheet; a first conductor connected to the graphene sheet, the first conductor being configured to guide electromagnetic waves to the graphene sheet, to produce an increase in a temperature of the graphene sheet when a photon of the electromagnetic waves is absorbed by the graphene sheet; a Josephson junction adjacent or including the graphene sheet, the Josephson junction having a gap coupled to electrons of the graphene sheet; and a circuit connected to two contacts of the Josephson junction, the circuit configured to detect a decrease in a critical current of the Josephson junction, the decrease corresponding to the increase in the temperature of the graphene sheet.
The photon detector of claim 1, wherein the first conductor is a conductor of a log periodic antenna.
The photon detector of claim 1, wherein the first conductor is one of two superconducting conductors of the Josephson junction.
The photon detector of claim 1, further comprising a second conductor, wherein the first conductor, the graphene sheet, and the second conductor form a microstrip transmission line.
082066 (15-7021-US-CIP)
082066 (15-7021-US-CIP)
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based single photon detector with Josephson junction readout
Materials described outside the worked examples.
graphene sheet
hexagonal boron nitride
hBN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 B is a graph of voltage across a Josephson junction and current flowing through the junction at a second temperature, higher than the first temperature, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility of graphene sheet (high-mobility embodiment) | ≥ 100000 cm2/V/s | graphene sheet |
electron mobility of graphene sheet (lower-mobility embodiment) | 1000 cm2/V/s |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,799,817Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a single photon detector, according to an embodiment of the present invention; [0027]
FIG. 2 B is a schematic side view of a graphene sheet sandwiched between two layers of hexagonal boron nitride, according to an embodiment of the present …
FIG. 3 B is a graph of voltage across a Josephson junction and current flowing through the junction at a second temperature, higher than the first temperature, …
FIG. 4 is a block diagram of a pulse detector according to an embodiment of the present invention; [0032]
FIG. 5 is a schematic plan view of a sensor assembly according to an embodiment of the present invention; [0033]
FIG. 6 is a perspective view of a communications system including mobile transceivers according to an embodiment of the present invention; [0034]
FIG. 7 is a graph of critical current probability distributions according to an embodiment of the present invention; [0035]
FIG. 8A is a hybrid schematic diagram and plan view of a portion of a single photon detector, according to an embodiment of the present invention; [0036]
FIG. 9C is a plan view of a portion of a single photon detector, according to an embodiment of the present invention; and [0040]
FIG. 10 is a schematic diagram of a portion of a single photon detector, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photon detector comprising: a graphene sheet; a first conductor connected to the graphene sheet, the first conductor being configured to guide electromagnetic waves to the graphene sheet, to produce an increase in a temperature of the graphene sheet when a photon of the electromagnetic waves is absorbed by the graphene sheet; a Josephson junction adjacent or including the graphene sheet, the Josephson junction having a gap coupled to electrons of the graphene sheet; and a circuit connected to two contacts of the Josephson junction, the circuit configured to detect a decrease in a critical current of the Josephson junction, the decrease corresponding to the increase in the temperature of the graphene sheet.
The photon detector of claim 1, wherein the first conductor is a conductor of a log periodic antenna.
The photon detector of claim 1, wherein the first conductor is one of two superconducting conductors of the Josephson junction.
The photon detector of claim 1, further comprising a second conductor, wherein the first conductor, the graphene sheet, and the second conductor form a microstrip transmission line.
082066 (15-7021-US-CIP)
082066 (15-7021-US-CIP)
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based single photon detector with Josephson junction readout
Materials described outside the worked examples.
graphene sheet
hexagonal boron nitride
hBN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 B is a graph of voltage across a Josephson junction and current flowing through the junction at a second temperature, higher than the first temperature, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility of graphene sheet (high-mobility embodiment) | ≥ 100000 cm2/V/s | graphene sheet |
electron mobility of graphene sheet (lower-mobility embodiment) | 1000 cm2/V/s |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,799,817Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a single photon detector, according to an embodiment of the present invention; [0027]
FIG. 2 B is a schematic side view of a graphene sheet sandwiched between two layers of hexagonal boron nitride, according to an embodiment of the present …
FIG. 3 B is a graph of voltage across a Josephson junction and current flowing through the junction at a second temperature, higher than the first temperature, …
FIG. 4 is a block diagram of a pulse detector according to an embodiment of the present invention; [0032]
FIG. 5 is a schematic plan view of a sensor assembly according to an embodiment of the present invention; [0033]
FIG. 6 is a perspective view of a communications system including mobile transceivers according to an embodiment of the present invention; [0034]
FIG. 7 is a graph of critical current probability distributions according to an embodiment of the present invention; [0035]
FIG. 8A is a hybrid schematic diagram and plan view of a portion of a single photon detector, according to an embodiment of the present invention; [0036]
FIG. 9C is a plan view of a portion of a single photon detector, according to an embodiment of the present invention; and [0040]
FIG. 10 is a schematic diagram of a portion of a single photon detector, according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photon detector comprising: a graphene sheet; a first conductor connected to the graphene sheet, the first conductor being configured to guide electromagnetic waves to the graphene sheet, to produce an increase in a temperature of the graphene sheet when a photon of the electromagnetic waves is absorbed by the graphene sheet; a Josephson junction adjacent or including the graphene sheet, the Josephson junction having a gap coupled to electrons of the graphene sheet; and a circuit connected to two contacts of the Josephson junction, the circuit configured to detect a decrease in a critical current of the Josephson junction, the decrease corresponding to the increase in the temperature of the graphene sheet.
The photon detector of claim 1, wherein the first conductor is a conductor of a log periodic antenna.
The photon detector of claim 1, wherein the first conductor is one of two superconducting conductors of the Josephson junction.
The photon detector of claim 1, further comprising a second conductor, wherein the first conductor, the graphene sheet, and the second conductor form a microstrip transmission line.
082066 (15-7021-US-CIP)
082066 (15-7021-US-CIP)
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based single photon detector with Josephson junction readout
Materials described outside the worked examples.
graphene sheet
hexagonal boron nitride
hBN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 B is a graph of voltage across a Josephson junction and current flowing through the junction at a second temperature, higher than the first temperature, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility of graphene sheet (high-mobility embodiment) | ≥ 100000 cm2/V/s | graphene sheet |
electron mobility of graphene sheet (lower-mobility embodiment) | 1000 cm2/V/s |
Related documents with shared materials, methods, properties, or citations.
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon
Si
FIG. 7 is a graph of critical current probability distributions according to an embodiment of the present invention; [0035]
graphene sheet |
Thickness | 50–2000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 4–40 nm | — |
Thickness | 50–100 nm | — |
Duration | 10–15 minutes | — |
Thickness | 1–100 µm | — |
Thickness | ≤ 2 µm | — |
Temperature | ≤ 4 K | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≥ 100000 cm | — |
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon
Si
FIG. 7 is a graph of critical current probability distributions according to an embodiment of the present invention; [0035]
graphene sheet |
Thickness | 50–2000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 4–40 nm | — |
Thickness | 50–100 nm | — |
Duration | 10–15 minutes | — |
Thickness | 1–100 µm | — |
Thickness | ≤ 2 µm | — |
Temperature | ≤ 4 K | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≥ 100000 cm | — |
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon
Si
FIG. 7 is a graph of critical current probability distributions according to an embodiment of the present invention; [0035]
graphene sheet |
Thickness | 50–2000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 4–40 nm | — |
Thickness | 50–100 nm | — |
Duration | 10–15 minutes | — |
Thickness | 1–100 µm | — |
Thickness | ≤ 2 µm | — |
Temperature | ≤ 4 K | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≥ 100000 cm | — |
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
silicon
Si
FIG. 7 is a graph of critical current probability distributions according to an embodiment of the present invention; [0035]
graphene sheet |
Thickness | 50–2000 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 4–40 nm | — |
Thickness | 50–100 nm | — |
Duration | 10–15 minutes | — |
Thickness | 1–100 µm | — |
Thickness | ≤ 2 µm | — |
Temperature | ≤ 4 K | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≤ 20 µm | — |
Thickness | ≥ 100000 cm | — |