Research paper
Experimental GrowthExperimental CharacterizationInitial demonstration of AlGaAs-GaAsP-β-Ga₂O₃ n-p-n double heterojunctions
Jie Zhou, Ashok Dheenan, Jiarui Gong, Carolina Adamo et al.
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
16 preparations1 characterization4 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | rectification ratio (AlGaAs/GaAsP n-p junction diode) | 2.57×10^3 | — | |||
| Fet On Off Ratio | rectification ratio (GaAsP/β-Ga₂O₃ p-n junction diode) | 4.85×10^2 | — | |||
| Fet Threshold Voltage | ideality factor (AlGaAs/GaAsP n-p junction diode) | 1.29 | — | |||
| Fet Threshold Voltage | ideality factor (GaAsP/β-Ga₂O₃ p-n junction diode) | 1.36 | — | |||
| Optical Band Gap | band gap | 4.9eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Monolithic Integration of Embedded III-V Lasers on SOI
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Quantum dot single photon source on SiN integrated with coupled crossover waveguides
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light Emitting Diodes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
16 preparations1 characterization4 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | rectification ratio (AlGaAs/GaAsP n-p junction diode) | 2.57×10^3 | — | |||
| Fet On Off Ratio | rectification ratio (GaAsP/β-Ga₂O₃ p-n junction diode) | 4.85×10^2 | — | |||
| Fet Threshold Voltage | ideality factor (AlGaAs/GaAsP n-p junction diode) | 1.29 | — | |||
| Fet Threshold Voltage | ideality factor (GaAsP/β-Ga₂O₃ p-n junction diode) | 1.36 | — | |||
| Optical Band Gap | band gap | 4.9eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Monolithic Integration of Embedded III-V Lasers on SOI
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Quantum dot single photon source on SiN integrated with coupled crossover waveguides
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light Emitting Diodes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
16 preparations1 characterization4 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | rectification ratio (AlGaAs/GaAsP n-p junction diode) | 2.57×10^3 | — | |||
| Fet On Off Ratio | rectification ratio (GaAsP/β-Ga₂O₃ p-n junction diode) | 4.85×10^2 | — | |||
| Fet Threshold Voltage | ideality factor (AlGaAs/GaAsP n-p junction diode) | 1.29 | — | |||
| Fet Threshold Voltage | ideality factor (GaAsP/β-Ga₂O₃ p-n junction diode) | 1.36 | — | |||
| Optical Band Gap | band gap | 4.9eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Monolithic Integration of Embedded III-V Lasers on SOI
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Quantum dot single photon source on SiN integrated with coupled crossover waveguides
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light Emitting Diodes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
16 preparations1 characterization4 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | rectification ratio (AlGaAs/GaAsP n-p junction diode) | 2.57×10^3 | — | |||
| Fet On Off Ratio | rectification ratio (GaAsP/β-Ga₂O₃ p-n junction diode) | 4.85×10^2 | — | |||
| Fet Threshold Voltage | ideality factor (AlGaAs/GaAsP n-p junction diode) | 1.29 | — | |||
| Fet Threshold Voltage | ideality factor (GaAsP/β-Ga₂O₃ p-n junction diode) | 1.36 | — | |||
| Optical Band Gap | band gap | 4.9eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Monolithic Integration of Embedded III-V Lasers on SOI
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Quantum dot single photon source on SiN integrated with coupled crossover waveguides
Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light Emitting Diodes