Research paper
Experimental CharacterizationRelated documents with shared materials, methods, properties, or citations.
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
High-Efficiency Tunable Microwave Photon Detector Based on a Semiconductor Double Quantum Dot Coupled to a Superconducting High-Impedance Cavity
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings
High fidelity flopping-mode single spin operation with tuning inter-dot orbital levels
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Dislocation-Free InGaN Nanoscale Light-Emitting Diode Pixels on Single Crystal GaN Substrate
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
Related documents with shared materials, methods, properties, or citations.
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
High-Efficiency Tunable Microwave Photon Detector Based on a Semiconductor Double Quantum Dot Coupled to a Superconducting High-Impedance Cavity
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings
High fidelity flopping-mode single spin operation with tuning inter-dot orbital levels
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Dislocation-Free InGaN Nanoscale Light-Emitting Diode Pixels on Single Crystal GaN Substrate
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
Related documents with shared materials, methods, properties, or citations.
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
High-Efficiency Tunable Microwave Photon Detector Based on a Semiconductor Double Quantum Dot Coupled to a Superconducting High-Impedance Cavity
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings
High fidelity flopping-mode single spin operation with tuning inter-dot orbital levels
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Dislocation-Free InGaN Nanoscale Light-Emitting Diode Pixels on Single Crystal GaN Substrate
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
Related documents with shared materials, methods, properties, or citations.
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
High-Efficiency Tunable Microwave Photon Detector Based on a Semiconductor Double Quantum Dot Coupled to a Superconducting High-Impedance Cavity
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Reconfigurable multiplex setup for high throughput electrical characterisation at cryogenic temperature
Two-dimensional hydrodynamic viscous electron flow in annular Corbino rings
High fidelity flopping-mode single spin operation with tuning inter-dot orbital levels
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Dislocation-Free InGaN Nanoscale Light-Emitting Diode Pixels on Single Crystal GaN Substrate
Cr2O3/β-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm