Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
AlGaAs-on-insulator photonic chip with 400-nm AlGaAs photonic layer bonded to a 3-µm thermal SiO₂ buffer on Si, passivated with Al₂O3, patterned into photonic components, and topped with Ti/Pt resistive heaters.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
AlGaAs-on-insulator photonic chip with 400-nm AlGaAs photonic layer bonded to a 3-µm thermal SiO₂ buffer on Si, passivated with Al₂O3, patterned into photonic components, and topped with Ti/Pt resistive heaters.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
AlGaAs-on-insulator photonic chip with 400-nm AlGaAs photonic layer bonded to a 3-µm thermal SiO₂ buffer on Si, passivated with Al₂O3, patterned into photonic components, and topped with Ti/Pt resistive heaters.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
AlGaAs-on-insulator photonic chip with 400-nm AlGaAs photonic layer bonded to a 3-µm thermal SiO₂ buffer on Si, passivated with Al₂O3, patterned into photonic components, and topped with Ti/Pt resistive heaters.
