Research paper
Experimental GrowthExperimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Feature Dimension | waveguide width at taper start | 600nm | — | |||
| Feature Dimension | waveguide width at facet | 200nm | — | |||
| Film Thickness | AlGaAs photonic layer thickness | 400nm | — | |||
| Film Thickness | thermal SiO₂ buffer thickness | 3000nm | — | |||
| Film Thickness | Al₂O₃ passivation thickness | 8nm | — | |||
| Film Thickness | SiO₂ cladding thickness | 1000nm | — | |||
| Film Thickness | Ti heater thickness | 10nm | — | |||
| Film Thickness | Pt heater thickness | 100nm | — | |||
| Mode Field Diameter | Gaussian beam mode field diameter | 2.5um | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Feature Dimension | waveguide width at taper start | 600nm | — | |||
| Feature Dimension | waveguide width at facet | 200nm | — | |||
| Film Thickness | AlGaAs photonic layer thickness | 400nm | — | |||
| Film Thickness | thermal SiO₂ buffer thickness | 3000nm | — | |||
| Film Thickness | Al₂O₃ passivation thickness | 8nm | — | |||
| Film Thickness | SiO₂ cladding thickness | 1000nm | — | |||
| Film Thickness | Ti heater thickness | 10nm | — | |||
| Film Thickness | Pt heater thickness | 100nm | — | |||
| Mode Field Diameter | Gaussian beam mode field diameter | 2.5um | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Feature Dimension | waveguide width at taper start | 600nm | — | |||
| Feature Dimension | waveguide width at facet | 200nm | — | |||
| Film Thickness | AlGaAs photonic layer thickness | 400nm | — | |||
| Film Thickness | thermal SiO₂ buffer thickness | 3000nm | — | |||
| Film Thickness | Al₂O₃ passivation thickness | 8nm | — | |||
| Film Thickness | SiO₂ cladding thickness | 1000nm | — | |||
| Film Thickness | Ti heater thickness | 10nm | — | |||
| Film Thickness | Pt heater thickness | 100nm | — | |||
| Mode Field Diameter | Gaussian beam mode field diameter | 2.5um | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Feature Dimension | waveguide width at taper start | 600nm | — | |||
| Feature Dimension | waveguide width at facet | 200nm | — | |||
| Film Thickness | AlGaAs photonic layer thickness | 400nm | — | |||
| Film Thickness | thermal SiO₂ buffer thickness | 3000nm | — | |||
| Film Thickness | Al₂O₃ passivation thickness | 8nm | — | |||
| Film Thickness | SiO₂ cladding thickness | 1000nm | — | |||
| Film Thickness | Ti heater thickness | 10nm | — | |||
| Film Thickness | Pt heater thickness | 100nm | — | |||
| Mode Field Diameter | Gaussian beam mode field diameter | 2.5um | — |