| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 12.51angstrom | — | — | ||
| Xrd Lattice Constant A | b | 3.1angstrom | — | — | ||
| Xrd Lattice Constant C | c | 5.92angstrom | — | — | ||
| Xrd Space Group | crystal system | monoclinic | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (100) | 10.25 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (010) | 10.09 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (001) | 13.19 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (110) | 10.1 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (011) | 10.79 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (100) | 10.2 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (010) | 10.87 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (001) | 12.4 | — | — | ||
| Fet Carrier Concentration | apparent charge density | 3200000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 1890000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 3960000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 6650000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 3560000000000000000cm⁻³ | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | >10MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 5.10-7.05MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 2.70-3.33MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 12.9MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 3.88-4.38MV/cm | — | |||
| Optical Band Gap | band gap | 3.6eV | — | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 12.51angstrom | — | — | ||
| Xrd Lattice Constant A | b | 3.1angstrom | — | — | ||
| Xrd Lattice Constant C | c | 5.92angstrom | — | — | ||
| Xrd Space Group | crystal system | monoclinic | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (100) | 10.25 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (010) | 10.09 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (001) | 13.19 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (110) | 10.1 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (011) | 10.79 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (100) | 10.2 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (010) | 10.87 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (001) | 12.4 | — | — | ||
| Fet Carrier Concentration | apparent charge density | 3200000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 1890000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 3960000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 6650000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 3560000000000000000cm⁻³ | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | >10MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 5.10-7.05MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 2.70-3.33MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 12.9MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 3.88-4.38MV/cm | — | |||
| Optical Band Gap | band gap | 3.6eV | — | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 12.51angstrom | — | — | ||
| Xrd Lattice Constant A | b | 3.1angstrom | — | — | ||
| Xrd Lattice Constant C | c | 5.92angstrom | — | — | ||
| Xrd Space Group | crystal system | monoclinic | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (100) | 10.25 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (010) | 10.09 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (001) | 13.19 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (110) | 10.1 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (011) | 10.79 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (100) | 10.2 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (010) | 10.87 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (001) | 12.4 | — | — | ||
| Fet Carrier Concentration | apparent charge density | 3200000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 1890000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 3960000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 6650000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 3560000000000000000cm⁻³ | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | >10MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 5.10-7.05MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 2.70-3.33MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 12.9MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 3.88-4.38MV/cm | — | |||
| Optical Band Gap | band gap | 3.6eV | — | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 12.51angstrom | — | — | ||
| Xrd Lattice Constant A | b | 3.1angstrom | — | — | ||
| Xrd Lattice Constant C | c | 5.92angstrom | — | — | ||
| Xrd Space Group | crystal system | monoclinic | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (100) | 10.25 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (010) | 10.09 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (001) | 13.19 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (110) | 10.1 | — | — | ||
| Xrd Lattice Constant A | εeff (DFT) for (011) | 10.79 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (100) | 10.2 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (010) | 10.87 | — | — | ||
| Xrd Lattice Constant A | εeff (Experiment) for (001) | 12.4 | — | — | ||
| Fet Carrier Concentration | apparent charge density | 3200000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 1890000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 3960000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 6650000000000000000cm⁻³ | — | |||
| Fet Carrier Concentration | apparent charge density | 3560000000000000000cm⁻³ | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | built-in potential range | 1.12-1.43V | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | >10MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 5.10-7.05MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 2.70-3.33MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 12.9MV/cm | — | |||
| Fet Threshold Voltage | parallel-plane breakdown electric field | 3.88-4.38MV/cm | — | |||
| Optical Band Gap | band gap | 3.6eV | — | — | — | — |
