Research paperExperimental GrowthExperimental CharacterizationComputational DFTCr₂O₃/β-Ga₂O₃ Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cmYizheng Liu, Haochen Wang, Carl Peterson, James S. Speck et al.2025·10.48550/arxiv.2511.20885·arXiv:2511.20885AbstractWe report the fabrication of Cr₂O₃/β-Ga₂O₃ heterojunction diodes using reactive magnetron sputtering of Cr₂O₃ on highly doped β-Ga₂O₃ bulk substrates along (100), (010), (001), (110), and (011) orientations to study orientation dependence of high electric field handling capability in β-Ga₂O3. Additional relative permittivity values in (110) and (011) orientations of β-Ga₂O₃ were computed by using first-principles calculation methods for accurate apparent charge density (ND-NA) extraction and breakdown electric field analysis from capacitance-voltage measurements.Read more
Highly doped bulk β-Ga₂O₃ substrate oriented along (100) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (010) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (001) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (110) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (011) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (100)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (010)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (001)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (110)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (011)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTCr₂O₃/β-Ga₂O₃ Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cmYizheng Liu, Haochen Wang, Carl Peterson, James S. Speck et al.2025·10.48550/arxiv.2511.20885·arXiv:2511.20885AbstractWe report the fabrication of Cr₂O₃/β-Ga₂O₃ heterojunction diodes using reactive magnetron sputtering of Cr₂O₃ on highly doped β-Ga₂O₃ bulk substrates along (100), (010), (001), (110), and (011) orientations to study orientation dependence of high electric field handling capability in β-Ga₂O3. Additional relative permittivity values in (110) and (011) orientations of β-Ga₂O₃ were computed by using first-principles calculation methods for accurate apparent charge density (ND-NA) extraction and breakdown electric field analysis from capacitance-voltage measurements.Read more
Highly doped bulk β-Ga₂O₃ substrate oriented along (100) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (010) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (001) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (110) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (011) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (100)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (010)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (001)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (110)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (011)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTCr₂O₃/β-Ga₂O₃ Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cmYizheng Liu, Haochen Wang, Carl Peterson, James S. Speck et al.2025·10.48550/arxiv.2511.20885·arXiv:2511.20885AbstractWe report the fabrication of Cr₂O₃/β-Ga₂O₃ heterojunction diodes using reactive magnetron sputtering of Cr₂O₃ on highly doped β-Ga₂O₃ bulk substrates along (100), (010), (001), (110), and (011) orientations to study orientation dependence of high electric field handling capability in β-Ga₂O3. Additional relative permittivity values in (110) and (011) orientations of β-Ga₂O₃ were computed by using first-principles calculation methods for accurate apparent charge density (ND-NA) extraction and breakdown electric field analysis from capacitance-voltage measurements.Read more
Highly doped bulk β-Ga₂O₃ substrate oriented along (100) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (010) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (001) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (110) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (011) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (100)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (010)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (001)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (110)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (011)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTCr₂O₃/β-Ga₂O₃ Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cmYizheng Liu, Haochen Wang, Carl Peterson, James S. Speck et al.2025·10.48550/arxiv.2511.20885·arXiv:2511.20885AbstractWe report the fabrication of Cr₂O₃/β-Ga₂O₃ heterojunction diodes using reactive magnetron sputtering of Cr₂O₃ on highly doped β-Ga₂O₃ bulk substrates along (100), (010), (001), (110), and (011) orientations to study orientation dependence of high electric field handling capability in β-Ga₂O3. Additional relative permittivity values in (110) and (011) orientations of β-Ga₂O₃ were computed by using first-principles calculation methods for accurate apparent charge density (ND-NA) extraction and breakdown electric field analysis from capacitance-voltage measurements.Read more
Highly doped bulk β-Ga₂O₃ substrate oriented along (100) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (010) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (001) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (110) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Highly doped bulk β-Ga₂O₃ substrate oriented along (011) for Schottky barrier diode and heterojunction diode fabrication.2 preparations1 characterization2 properties1 figureExperimentalGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (100)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (010)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (001)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (110)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand
Cr₂O₃/β-Ga₂O₃ heterojunction diode on (011)-oriented bulk β-Ga₂O3.8 preparations1 characterization1 property1 figureExperimentalCr₂O₃Studied MaterialGa₂O₃Studied MaterialExpand