kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)

Yizheng Liu; Zachary J. Biegler; Ashley E. Wissel-Garcia; James S. Speck; Sriram Krishnamoorthy

Research paper

Experimental GrowthExperimental Characterization

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck et al.

2025·arXiv:2511.05060

Research paper

Experimental GrowthExperimental Characterization

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck et al.

2025·arXiv:2511.05060

Research paper

Experimental GrowthExperimental Characterization

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck et al.

2025·arXiv:2511.05060

Research paper

Experimental GrowthExperimental Characterization

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck et al.

2025·arXiv:2511.05060

Research paper

Experimental GrowthExperimental Characterization

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck et al.

2025·arXiv:2511.05060

Research paper

Experimental GrowthExperimental Characterization

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck et al.

2025·arXiv:2511.05060

Research paper

Experimental GrowthExperimental Characterization

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck et al.

2025·arXiv:2511.05060

Research paper

Experimental GrowthExperimental Characterization

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia, James S. Speck et al.

2025·arXiv:2511.05060

NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-insulating GaN-on-sapphire template with UID GaN buffer and UID GaN cap.

3 preparations1 characterization5 properties1 figure

ExperimentalGaNStudied Material

NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire template with Mg-doped active region and p++ GaN contact layer.

3 preparations1 characterization1 property1 figure

ExperimentalGaNStudied Material

p-NiOx/GaN heterojunction test structure used for acceptor concentration extraction and charge-balance estimation.

2 preparations1 characterization5 properties1 figure

ExperimentalGaNStudied MaterialNiOxStudied Material

Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction diode with charge-balanced sidewall extension.

7 preparations1 characterization8 properties

ExperimentalGaNStudied MaterialNiOxStudied Material

NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-insulating GaN-on-sapphire template with UID GaN buffer and UID GaN cap.

3 preparations1 characterization5 properties1 figure

ExperimentalGaNStudied Material

NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire template with Mg-doped active region and p++ GaN contact layer.

3 preparations1 characterization1 property1 figure

ExperimentalGaNStudied Material

p-NiOx/GaN heterojunction test structure used for acceptor concentration extraction and charge-balance estimation.

2 preparations1 characterization5 properties1 figure

ExperimentalGaNStudied MaterialNiOxStudied Material

Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction diode with charge-balanced sidewall extension.

7 preparations1 characterization8 properties

ExperimentalGaNStudied MaterialNiOxStudied Material

NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-insulating GaN-on-sapphire template with UID GaN buffer and UID GaN cap.

3 preparations1 characterization5 properties1 figure

ExperimentalGaNStudied Material

NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire template with Mg-doped active region and p++ GaN contact layer.

3 preparations1 characterization1 property1 figure

ExperimentalGaNStudied Material

p-NiOx/GaN heterojunction test structure used for acceptor concentration extraction and charge-balance estimation.

2 preparations1 characterization5 properties1 figure

ExperimentalGaNStudied MaterialNiOxStudied Material

Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction diode with charge-balanced sidewall extension.

7 preparations1 characterization8 properties

ExperimentalGaNStudied MaterialNiOxStudied Material

NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-insulating GaN-on-sapphire template with UID GaN buffer and UID GaN cap.

3 preparations1 characterization5 properties1 figure

ExperimentalGaNStudied Material

NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire template with Mg-doped active region and p++ GaN contact layer.

3 preparations1 characterization1 property1 figure

ExperimentalGaNStudied Material

p-NiOx/GaN heterojunction test structure used for acceptor concentration extraction and charge-balance estimation.

2 preparations1 characterization5 properties1 figure

ExperimentalGaNStudied MaterialNiOxStudied Material

Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction diode with charge-balanced sidewall extension.

7 preparations1 characterization8 properties

ExperimentalGaNStudied MaterialNiOxStudied Material

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	sheet electron concentration	4900000000000cm⁻²	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Mobility	electron mobility	501cm²/Vs	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	bulk net apparent charge density	250000000000000000cm⁻³	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	integrated sheet ionized impurity density	4200000000000cm⁻²	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	net acceptor concentration (NA-ND)	1420000000000000000cm⁻³	GaN	NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire	—
Fet Carrier Concentration	acceptor concentration in p-NiOx	819000000000000000cm⁻³	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Dielectric Constant	relative permittivity epsilon_r (NiOx)	11.924	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Dielectric Constant	relative permittivity epsilon_r (GaN)	8.9	GaN	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Fet Carrier Concentration	electron density in GaN epitaxial layer	~1017cm⁻³	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet On Off Ratio	rectifying ratio Jon/Joff	109	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	breakdown voltage	2.8kV	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	breakdown voltage	0.94kV	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Sheet Resistance	forward on-state current density	10-30mA/mm	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Sheet Resistance	reverse leakage density	10^-6-10^-4mA/mm	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Substrate Thickness	estimated p-NiOx thickness for <15% charge imbalance margin	21.9-29.6nm	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Substrate Thickness	theoretically perfect charge-balance p-NiOx thickness	25.2nm	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	fraction of catastrophic breakdown voltage at leakage specification	~80%	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	sheet electron concentration	4900000000000cm⁻²	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Mobility	electron mobility	501cm²/Vs	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	bulk net apparent charge density	250000000000000000cm⁻³	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	integrated sheet ionized impurity density	4200000000000cm⁻²	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	net acceptor concentration (NA-ND)	1420000000000000000cm⁻³	GaN	NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire	—
Fet Carrier Concentration	acceptor concentration in p-NiOx	819000000000000000cm⁻³	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Dielectric Constant	relative permittivity epsilon_r (NiOx)	11.924	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Dielectric Constant	relative permittivity epsilon_r (GaN)	8.9	GaN	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Fet Carrier Concentration	electron density in GaN epitaxial layer	~1017cm⁻³	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet On Off Ratio	rectifying ratio Jon/Joff	109	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	breakdown voltage	2.8kV	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	breakdown voltage	0.94kV	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Sheet Resistance	forward on-state current density	10-30mA/mm	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Sheet Resistance	reverse leakage density	10^-6-10^-4mA/mm	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Substrate Thickness	estimated p-NiOx thickness for <15% charge imbalance margin	21.9-29.6nm	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Substrate Thickness	theoretically perfect charge-balance p-NiOx thickness	25.2nm	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	fraction of catastrophic breakdown voltage at leakage specification	~80%	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	sheet electron concentration	4900000000000cm⁻²	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Mobility	electron mobility	501cm²/Vs	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	bulk net apparent charge density	250000000000000000cm⁻³	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	integrated sheet ionized impurity density	4200000000000cm⁻²	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	net acceptor concentration (NA-ND)	1420000000000000000cm⁻³	GaN	NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire	—
Fet Carrier Concentration	acceptor concentration in p-NiOx	819000000000000000cm⁻³	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Dielectric Constant	relative permittivity epsilon_r (NiOx)	11.924	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Dielectric Constant	relative permittivity epsilon_r (GaN)	8.9	GaN	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Fet Carrier Concentration	electron density in GaN epitaxial layer	~1017cm⁻³	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet On Off Ratio	rectifying ratio Jon/Joff	109	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	breakdown voltage	2.8kV	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	breakdown voltage	0.94kV	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Sheet Resistance	forward on-state current density	10-30mA/mm	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Sheet Resistance	reverse leakage density	10^-6-10^-4mA/mm	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Substrate Thickness	estimated p-NiOx thickness for <15% charge imbalance margin	21.9-29.6nm	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Substrate Thickness	theoretically perfect charge-balance p-NiOx thickness	25.2nm	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	fraction of catastrophic breakdown voltage at leakage specification	~80%	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	sheet electron concentration	4900000000000cm⁻²	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Mobility	electron mobility	501cm²/Vs	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	bulk net apparent charge density	250000000000000000cm⁻³	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	integrated sheet ionized impurity density	4200000000000cm⁻²	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet Carrier Concentration	net acceptor concentration (NA-ND)	1420000000000000000cm⁻³	GaN	NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire	—
Fet Carrier Concentration	acceptor concentration in p-NiOx	819000000000000000cm⁻³	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Dielectric Constant	relative permittivity epsilon_r (NiOx)	11.924	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Dielectric Constant	relative permittivity epsilon_r (GaN)	8.9	GaN	p-NiOx/GaN heterojunction test structure used for acceptor c	—
Fet Carrier Concentration	electron density in GaN epitaxial layer	~1017cm⁻³	GaN	NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-in	—
Fet On Off Ratio	rectifying ratio Jon/Joff	109	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	breakdown voltage	2.8kV	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	breakdown voltage	0.94kV	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Sheet Resistance	forward on-state current density	10-30mA/mm	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Sheet Resistance	reverse leakage density	10^-6-10^-4mA/mm	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Substrate Thickness	estimated p-NiOx thickness for <15% charge imbalance margin	21.9-29.6nm	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Substrate Thickness	theoretically perfect charge-balance p-NiOx thickness	25.2nm	NiOx	p-NiOx/GaN heterojunction test structure used for acceptor c Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—
Fet Threshold Voltage	fraction of catastrophic breakdown voltage at leakage specification	~80%	GaN NiOx	Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction d	—

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH₃-MBE)

Samples

NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-insulating GaN-on-sapphire template with UID GaN buffer and UID GaN cap.

NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire template with Mg-doped active region and p++ GaN contact layer.

p-NiOx/GaN heterojunction test structure used for acceptor concentration extraction and charge-balance estimation.

Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction diode with charge-balanced sidewall extension.

Materials

Growth

Processing

Characterization

Properties

Why these are connected

Samples

NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-insulating GaN-on-sapphire template with UID GaN buffer and UID GaN cap.

NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire template with Mg-doped active region and p++ GaN contact layer.

p-NiOx/GaN heterojunction test structure used for acceptor concentration extraction and charge-balance estimation.

Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction diode with charge-balanced sidewall extension.

Materials

Growth

Processing

Characterization

Properties

Why these are connected

Samples

NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-insulating GaN-on-sapphire template with UID GaN buffer and UID GaN cap.

NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire template with Mg-doped active region and p++ GaN contact layer.

p-NiOx/GaN heterojunction test structure used for acceptor concentration extraction and charge-balance estimation.

Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction diode with charge-balanced sidewall extension.

Materials

Growth

Processing

Characterization

Properties

Why these are connected

Samples

NH₃-MBE grown n-GaN MOS-CV test epilayer on Fe-doped semi-insulating GaN-on-sapphire template with UID GaN buffer and UID GaN cap.

NH₃-MBE grown p-GaN MOS-CV test epilayer on GaN-on-sapphire template with Mg-doped active region and p++ GaN contact layer.

p-NiOx/GaN heterojunction test structure used for acceptor concentration extraction and charge-balance estimation.

Fabricated lateral p-NiOx/p-GaN/n-GaN super-heterojunction diode with charge-balanced sidewall extension.

Materials

Growth

Processing

Characterization

Properties

Why these are connected