Monolithic Integration of Embedded III-V Lasers on SOI

Wen-Qi Wei; An He; Bo Yang; Jing-Zhi Huang; Dong Han; Min Ming; Zi-Hao Wang; Xuhan Guo; Yikai Su; Jian-Jun Zhang; Ting Wang

doi:10.1038/s41377-023-01128-z

Paper details

Research paper

Experimental GrowthExperimental Characterization

Monolithic Integration of Embedded III-V Lasers on SOI

Wen-Qi Wei, An He, Bo Yang, Jing-Zhi Huang et al.

2022·10.1038/s41377-023-01128-z·arXiv:2207.07914

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Embedded InAs/GaAs quantum dot laser integrated on a trenched SOI platform with pre-patterned silicon waveguides and grating structures inside the laser trench.

5 preparations2 characterizations8 properties2 figures

ExperimentalInAs/GaAs quantum dots laser structureStudied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricSOISubstrate / Dielectric

Materials

InAs/GaAs quantum dots laser structure

Studied Material

Also known as

InAs/GaAs QD lasersembedded III-V lasers

studied material

silicon

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Monolithic Integration of Embedded III-V Lasers on SOI | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Feature Size	silicon grating slab width	146nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Feature Size	silicon grating gap width	209nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Feature Ratio	silicon grating duty cycle	0.4	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	top Si layer thickness	220nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	buried oxide thickness	3um	SiO₂	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	SiO₂ cladding thickness	3.5um	SiO₂	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Fet On Off Ratio	maximum operating temperature	continuous-wave lasing up to 85 °C	InAs/GaAs quantum dots laser structure	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Optical Output Power	maximum output power from butt-coupled silicon waveguide end tip	6.8mW	InAs/GaAs quantum dots laser structure	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—

Properties

Type	Label	Value	Material	Sample	Source
Feature Size	silicon grating slab width	146nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Feature Size	silicon grating gap width	209nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Feature Ratio	silicon grating duty cycle	0.4	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	top Si layer thickness	220nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	buried oxide thickness	3um	SiO₂	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	SiO₂ cladding thickness	3.5um	SiO₂	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Fet On Off Ratio	maximum operating temperature	continuous-wave lasing up to 85 °C	InAs/GaAs quantum dots laser structure	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Optical Output Power	maximum output power from butt-coupled silicon waveguide end tip	6.8mW	InAs/GaAs quantum dots laser structure	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—

Properties

Type	Label	Value	Material	Sample	Source
Feature Size	silicon grating slab width	146nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Feature Size	silicon grating gap width	209nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Feature Ratio	silicon grating duty cycle	0.4	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	top Si layer thickness	220nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	buried oxide thickness	3um	SiO₂	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	SiO₂ cladding thickness	3.5um	SiO₂	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Fet On Off Ratio	maximum operating temperature	continuous-wave lasing up to 85 °C	InAs/GaAs quantum dots laser structure	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Optical Output Power	maximum output power from butt-coupled silicon waveguide end tip	6.8mW	InAs/GaAs quantum dots laser structure	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—

Properties

Type	Label	Value	Material	Sample	Source
Feature Size	silicon grating slab width	146nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Feature Size	silicon grating gap width	209nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Feature Ratio	silicon grating duty cycle	0.4	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	top Si layer thickness	220nm	Si	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	buried oxide thickness	3um	SiO₂	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Layer Thickness	SiO₂ cladding thickness	3.5um	SiO₂	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Fet On Off Ratio	maximum operating temperature	continuous-wave lasing up to 85 °C	InAs/GaAs quantum dots laser structure	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—
Optical Output Power	maximum output power from butt-coupled silicon waveguide end tip	6.8mW	InAs/GaAs quantum dots laser structure	Embedded InAs/GaAs quantum dot laser integrated on a trenche	—

Monolithic Integration of Embedded III-V Lasers on SOI

Samples

Embedded InAs/GaAs quantum dot laser integrated on a trenched SOI platform with pre-patterned silicon waveguides and grating structures inside the laser trench.

Materials

Why these are connected

Monolithic Integration of Embedded III-V Lasers on SOI

Samples

Embedded InAs/GaAs quantum dot laser integrated on a trenched SOI platform with pre-patterned silicon waveguides and grating structures inside the laser trench.

Materials

Why these are connected

Monolithic Integration of Embedded III-V Lasers on SOI

Samples

Embedded InAs/GaAs quantum dot laser integrated on a trenched SOI platform with pre-patterned silicon waveguides and grating structures inside the laser trench.

Materials

Why these are connected

Monolithic Integration of Embedded III-V Lasers on SOI

Samples

Embedded InAs/GaAs quantum dot laser integrated on a trenched SOI platform with pre-patterned silicon waveguides and grating structures inside the laser trench.

Materials

Why these are connected

Monolithic Integration of Embedded III-V Lasers on SOI

Samples

Embedded InAs/GaAs quantum dot laser integrated on a trenched SOI platform with pre-patterned silicon waveguides and grating structures inside the laser trench.

Materials

Why these are connected

Monolithic Integration of Embedded III-V Lasers on SOI

Samples

Embedded InAs/GaAs quantum dot laser integrated on a trenched SOI platform with pre-patterned silicon waveguides and grating structures inside the laser trench.

Materials

Why these are connected

Monolithic Integration of Embedded III-V Lasers on SOI

Samples

Embedded InAs/GaAs quantum dot laser integrated on a trenched SOI platform with pre-patterned silicon waveguides and grating structures inside the laser trench.

Materials

Why these are connected

Monolithic Integration of Embedded III-V Lasers on SOI

Samples

Embedded InAs/GaAs quantum dot laser integrated on a trenched SOI platform with pre-patterned silicon waveguides and grating structures inside the laser trench.

Materials

Why these are connected

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