Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations1 characterization4 properties2 figures
4 preparations1 characterization2 properties
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Electroluminescence in n-type GaAs unipolar nanoLEDs
Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas
Expanding the Quantum Photonic Toolbox in AlGaAsOI
An rf Quantum Capacitance Parametric Amplifier
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations1 characterization4 properties2 figures
4 preparations1 characterization2 properties
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Electroluminescence in n-type GaAs unipolar nanoLEDs
Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas
Expanding the Quantum Photonic Toolbox in AlGaAsOI
An rf Quantum Capacitance Parametric Amplifier
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations1 characterization4 properties2 figures
4 preparations1 characterization2 properties
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Electroluminescence in n-type GaAs unipolar nanoLEDs
Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas
Expanding the Quantum Photonic Toolbox in AlGaAsOI
An rf Quantum Capacitance Parametric Amplifier
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations1 characterization4 properties2 figures
4 preparations1 characterization2 properties
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Effect of geometry on the frequency limit of GaAs/AlGaAs 2-Dimensional Electron Gas (2DEG) Hall effect sensors
Electroluminescence in n-type GaAs unipolar nanoLEDs
Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas
Expanding the Quantum Photonic Toolbox in AlGaAsOI
An rf Quantum Capacitance Parametric Amplifier
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Initial demonstration of AlGaAs-GaAsP-β-Ga2O3 n-p-n double heterojunctions
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures