SOLID STATE LASER DEVICE USING A SELECTED CRYSTAL ORIENTATION IN NON-POLAR OR SEMI-POLAR GaN CONTAINING MATERIALS AND METHODS

Rajat Sharma

Patent

Atlas literature

Patent

US 8,494,017

SOLID STATE LASER DEVICE USING A SELECTED CRYSTAL ORIENTATION IN NON-POLAR OR SEMI-POLAR GaN CONTAINING MATERIALS AND METHODS

Rajat Sharma, Eric M. Hall, Christiane Poblenz, Mark P. D'Evelyn

KAAI, Inc.·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 14 dependent

2
Independent
Listing of Claims: 1-39. canceled
40
Independentgallium and nitrogen containing crystalline materialedge emitting laser diode on nonpolar m-plane GaN
(Withdrawn-currently amended) A laser device comprising: a gallium and nitrogen containing crystalline material having a nonpolar m -plane surface region; a laser cavity formed within a portion of the gallium and nitrogen containing crystalline material, the laser cavity being characterized by a length extending from a ﬁrst end to a second opposite end; a ﬁrst facet provided on the ﬁrst end; and a second facet provided on the second end; wherein the length of the laser cavity is along a direction that is at an angle measured in degrees from a [0001] direction of the gallium and nitrogen containing crystalline materia l; and wherein the length of the laser cavity is at an angle of between about 0.3 degrees to about 30 degrees or between about -0.3 degrees to about -30 degrees from a [00011 direction of the gallium and nitrogen containing crystalline material.
1. 41
  Dependent← claim 40GaNedge emitting laser diode on nonpolar m-plane GaN
  The device of claim 40, wherein the gallium and nitrogen containing crystalline material comprises gallium nitride. withdrawn
2. 42
  Dependent← claim 40gallium and nitrogen containing crystalline materialedge emitting laser diode on nonpolar m-plane GaN
  The device of claim 40, wherein the nonpolar m -plane surface region is an oﬀ-cut from an m -plane, within +/- 10 degrees toward a c-plane, and/or within +/- 10 degrees toward an a-plane. withdrawn
3. 44
  Dependent← claim 40GaNedge emitting laser diode on nonpolar m-plane GaN
  The device of claim 40, wherein the ﬁrst facet and the second facet have an orientation within ± 5 degrees of a { 1 1 -2 6} crystallographic plane or within ± 5 degrees of a {1 1 -2 -6} crystallographic plane of the gallium nitride containing crystalline material. withdrawn
4. 45
  Dependent← claim 40edge emitting laser diode on nonpolar m-plane GaN
  The device of claim 40, wherein the ﬁrst facet is substantially parallel to the second facet. withdrawn
5. 46
  Dependent← claim 40edge emitting laser diode on nonpolar m-plane GaN
  The device of claim 40, further comprising an active region within the laser cavity. withdrawn
6. 56
  Dependent← claim 40edge emitting laser diode on nonpolar m-plane GaN
  The device of claim 40, wherein the ﬁrst facet mechanically cleaving.
7. 57
  Dependent← claim 40edge emitting laser diode on nonpolar m-plane GaN
  The device of claim 40, wherein the ﬁrst facet surface roughness less than about 1 nm over a and the second facet are formed by and the second facet are characterized by a micron square area. 4
43
Independent
canceled
48
Independentgallium and nitrogen containing crystalline materialedge emitting laser diode on nonpolar m-plane GaN
A method of forming a laser device comprising: providing a gallium and nitrogen containing crystalline material having a nonpolar m- plane surface region; providing a laser cavity formed within a portion of the gallium and nitrogen containing crystalline material, the laser cavity being characterized by a length extending from a ﬁrst end to a second opposite end; providing a ﬁrst facet on the ﬁrst end; and providing a second facet on the second end; wherein the length of the laser cavity is along a direction that is at an angle measured in degrees from a [0001] direction of the gallium and nitrogen containing crystalline material; and wherein the length of the laser cavity is at an angle of between about 0.3 degrees to about 30 degrees or between about -0.3 degrees to about -30 degrees from a [00011 direction of the gallium and nitrogen containing crystalline material.
1. 49
  Dependent← claim 48GaN
  The method of claim 48, wherein the gallium and nitrogen containing crystalline material comprises gallium nitride.
2. 50
  Dependent← claim 48gallium and nitrogen containing crystalline material
  The method of claim 48, wherein the nonpolar m -plane surface region is an oﬀ-cut from an m -plane, within +/- 10 degrees toward a c-plane, and/or within +/- 10 degrees toward an a-plane.
3. 52
  Dependent← claim 48GaN
  The method of claim 48, wherein the ﬁrst facet and the second facet have an orientation within ± 5 degrees of a { 1 1 -2 6} crystallographic plane or within ± 5 degrees of a {1 1 -2 -6} crystallographic plane of the gallium nitride containing crystalline material.
4. 53
  Dependent← claim 48
  The method of claim 48, wherein the ﬁrst facet is substantially parallel to the second facet.
5. 54
  Dependent← claim 48
  The method of claim 48, wherein providing the ﬁrst facet and providing the second facet comprises mechanically cleaving.
6. 55
  Dependent← claim 48
  The method of claim 48, wherein the ﬁrst facet and the second facet are characterized by a surface roughness less than about 1 nm over a 25 micron square area.
51
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

edge emitting laser diode on nonpolar m-plane GaN

AlInGaN active layeractive layer

gallium and nitrogen containing crystalline materialsubstrate

Materials

Materials described outside the worked examples.

gallium and nitrogen containing crystalline material

Substrate And Laser Host

gallium nitride

GaN

Substrate And Laser Host

Process steps

Additional fabrication and treatment steps described in the patent.

Cleaving

Step 1

Process details

cleavage type:mechanical cleaving

facet orientation:{1 1 -2 ±6} crystallographic plane

surface roughness:less than about 1 nm over a 25 micron square area

Materials:

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	1–30 nm	—
Thickness	1–5 nm

Why these are connected

Related documents with shared materials, methods, properties, or citations.

SOLID STATE LASER DEVICE USING A SELECTED CRYSTAL ORIENTATION IN NON-POLAR OR SEMI-POLAR GaN CONTAINING MATERIALS AND METHODS | Matter42 Literature