Patent
US 10,272,537OF THE INVENTION: METHOD FOR POLISHING GaN S I NGLE CRYSTAL MATERIAL
Makoto SATO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,272,537Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-6. Canceled
Canceled
(Cu rr ently Amended) A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a loose polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, wherein the crystal material is a single crystal of GaN, and wherein the polishing liquid is an oxidizing polishing liquid having an oxidation- reduction potential between Ehmin (determined by Eq. (1)) mV and Ehmax (determined by Eq. (2)) mV and pH within a range of 0.1 to 1.5 and 4.9 to 6.5: Ehmin (mV) = -33.9 pH+750 (1) Ehmax (mV) = -82.1 pH+1491 (2). Currently amended
The polishing processing method according to claim 7, wherein the oxidizing polishing liquid has potassium permanganate or potassium thiosulphate added thereto as an oxidation-reduction potential adjustment agent. Previously presented
(Cu rr ently Amended) The polishing processing method according to claim 7, wherein the loose polishing abrasive grain type polishing pad is made of a hard foamed polyurethane resin, and wherein the polishing abrasive grans are loose abrasive grains contained in the oxidizing polishing liquid supplied to the polishing pad. Currently amended
The polishing processing method according to claim 7, wherein the pH of the oxidizing polishing liquid is within a range of 0.1 to 1.2 and 6.3 to 6.5. New
(Cu rr ently Amended) A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a fixed polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, wherein the crystal material is a single crystal of GaN, and wherein the polishing liquid is an oxidizing polishing liquid having an oxidation- reduction potential between Ehmin (determined by Eq. (3)) mV and Ehmax (determined by Eq. (4)) mV and pH between 0.12 and 5.7: Ehmin (mV) = -27.2 pH+738.4 (3) Ehmax (mV) = -84 pH+1481 (4). Currently amended
The polishing processing method according to claim 8, wherein the oxidizing polishing liquid has potassium permanganate or potassium thiosulphate added thereto as an oxidation-reduction potential adjustment agent. Previously presented
(Cu rr ently Amended) The polishing processing method according to claim 8, wherein the fixed polishing abrasive grain type polishing pad has a matrix resin with independent pores or communicating pores, and wherein the plurality of polishing abrasive grains is housed in the matrix resin such that the polishing abrasive grains are partially fixed inside the independent pores or communicating pores formed in the matrix resin or are partially separated from the matrix resin. Currently amended
(Cu rr ently Amended) The polishing processing method according to claim 8, wherein a matrix resin of the fixed polishing abrasive grain type polishing pad is made of an epoxy resin or a polyethersulfone (PES) resin. Currently amended
The polishing processing method according to claim 8. wherein the oxidizing polishing liquid does not contain loose abrasive grains. New
Materials described outside the worked examples.
GaN single crystal
GaN
potassium permanganate
KMnO₄
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 10,272,537Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-6. Canceled
Canceled
(Cu rr ently Amended) A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a loose polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, wherein the crystal material is a single crystal of GaN, and wherein the polishing liquid is an oxidizing polishing liquid having an oxidation- reduction potential between Ehmin (determined by Eq. (1)) mV and Ehmax (determined by Eq. (2)) mV and pH within a range of 0.1 to 1.5 and 4.9 to 6.5: Ehmin (mV) = -33.9 pH+750 (1) Ehmax (mV) = -82.1 pH+1491 (2). Currently amended
The polishing processing method according to claim 7, wherein the oxidizing polishing liquid has potassium permanganate or potassium thiosulphate added thereto as an oxidation-reduction potential adjustment agent. Previously presented
(Cu rr ently Amended) The polishing processing method according to claim 7, wherein the loose polishing abrasive grain type polishing pad is made of a hard foamed polyurethane resin, and wherein the polishing abrasive grans are loose abrasive grains contained in the oxidizing polishing liquid supplied to the polishing pad. Currently amended
The polishing processing method according to claim 7, wherein the pH of the oxidizing polishing liquid is within a range of 0.1 to 1.2 and 6.3 to 6.5. New
(Cu rr ently Amended) A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a fixed polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, wherein the crystal material is a single crystal of GaN, and wherein the polishing liquid is an oxidizing polishing liquid having an oxidation- reduction potential between Ehmin (determined by Eq. (3)) mV and Ehmax (determined by Eq. (4)) mV and pH between 0.12 and 5.7: Ehmin (mV) = -27.2 pH+738.4 (3) Ehmax (mV) = -84 pH+1481 (4). Currently amended
The polishing processing method according to claim 8, wherein the oxidizing polishing liquid has potassium permanganate or potassium thiosulphate added thereto as an oxidation-reduction potential adjustment agent. Previously presented
(Cu rr ently Amended) The polishing processing method according to claim 8, wherein the fixed polishing abrasive grain type polishing pad has a matrix resin with independent pores or communicating pores, and wherein the plurality of polishing abrasive grains is housed in the matrix resin such that the polishing abrasive grains are partially fixed inside the independent pores or communicating pores formed in the matrix resin or are partially separated from the matrix resin. Currently amended
(Cu rr ently Amended) The polishing processing method according to claim 8, wherein a matrix resin of the fixed polishing abrasive grain type polishing pad is made of an epoxy resin or a polyethersulfone (PES) resin. Currently amended
The polishing processing method according to claim 8. wherein the oxidizing polishing liquid does not contain loose abrasive grains. New
Materials described outside the worked examples.
GaN single crystal
GaN
potassium permanganate
KMnO₄
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 10,272,537Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-6. Canceled
Canceled
(Cu rr ently Amended) A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a loose polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, wherein the crystal material is a single crystal of GaN, and wherein the polishing liquid is an oxidizing polishing liquid having an oxidation- reduction potential between Ehmin (determined by Eq. (1)) mV and Ehmax (determined by Eq. (2)) mV and pH within a range of 0.1 to 1.5 and 4.9 to 6.5: Ehmin (mV) = -33.9 pH+750 (1) Ehmax (mV) = -82.1 pH+1491 (2). Currently amended
The polishing processing method according to claim 7, wherein the oxidizing polishing liquid has potassium permanganate or potassium thiosulphate added thereto as an oxidation-reduction potential adjustment agent. Previously presented
(Cu rr ently Amended) The polishing processing method according to claim 7, wherein the loose polishing abrasive grain type polishing pad is made of a hard foamed polyurethane resin, and wherein the polishing abrasive grans are loose abrasive grains contained in the oxidizing polishing liquid supplied to the polishing pad. Currently amended
The polishing processing method according to claim 7, wherein the pH of the oxidizing polishing liquid is within a range of 0.1 to 1.2 and 6.3 to 6.5. New
(Cu rr ently Amended) A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a fixed polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, wherein the crystal material is a single crystal of GaN, and wherein the polishing liquid is an oxidizing polishing liquid having an oxidation- reduction potential between Ehmin (determined by Eq. (3)) mV and Ehmax (determined by Eq. (4)) mV and pH between 0.12 and 5.7: Ehmin (mV) = -27.2 pH+738.4 (3) Ehmax (mV) = -84 pH+1481 (4). Currently amended
The polishing processing method according to claim 8, wherein the oxidizing polishing liquid has potassium permanganate or potassium thiosulphate added thereto as an oxidation-reduction potential adjustment agent. Previously presented
(Cu rr ently Amended) The polishing processing method according to claim 8, wherein the fixed polishing abrasive grain type polishing pad has a matrix resin with independent pores or communicating pores, and wherein the plurality of polishing abrasive grains is housed in the matrix resin such that the polishing abrasive grains are partially fixed inside the independent pores or communicating pores formed in the matrix resin or are partially separated from the matrix resin. Currently amended
(Cu rr ently Amended) The polishing processing method according to claim 8, wherein a matrix resin of the fixed polishing abrasive grain type polishing pad is made of an epoxy resin or a polyethersulfone (PES) resin. Currently amended
The polishing processing method according to claim 8. wherein the oxidizing polishing liquid does not contain loose abrasive grains. New
Materials described outside the worked examples.
GaN single crystal
GaN
potassium permanganate
KMnO₄
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 10,272,537Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-6. Canceled
Canceled
(Cu rr ently Amended) A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a loose polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, wherein the crystal material is a single crystal of GaN, and wherein the polishing liquid is an oxidizing polishing liquid having an oxidation- reduction potential between Ehmin (determined by Eq. (1)) mV and Ehmax (determined by Eq. (2)) mV and pH within a range of 0.1 to 1.5 and 4.9 to 6.5: Ehmin (mV) = -33.9 pH+750 (1) Ehmax (mV) = -82.1 pH+1491 (2). Currently amended
The polishing processing method according to claim 7, wherein the oxidizing polishing liquid has potassium permanganate or potassium thiosulphate added thereto as an oxidation-reduction potential adjustment agent. Previously presented
(Cu rr ently Amended) The polishing processing method according to claim 7, wherein the loose polishing abrasive grain type polishing pad is made of a hard foamed polyurethane resin, and wherein the polishing abrasive grans are loose abrasive grains contained in the oxidizing polishing liquid supplied to the polishing pad. Currently amended
The polishing processing method according to claim 7, wherein the pH of the oxidizing polishing liquid is within a range of 0.1 to 1.2 and 6.3 to 6.5. New
(Cu rr ently Amended) A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a fixed polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, wherein the crystal material is a single crystal of GaN, and wherein the polishing liquid is an oxidizing polishing liquid having an oxidation- reduction potential between Ehmin (determined by Eq. (3)) mV and Ehmax (determined by Eq. (4)) mV and pH between 0.12 and 5.7: Ehmin (mV) = -27.2 pH+738.4 (3) Ehmax (mV) = -84 pH+1481 (4). Currently amended
The polishing processing method according to claim 8, wherein the oxidizing polishing liquid has potassium permanganate or potassium thiosulphate added thereto as an oxidation-reduction potential adjustment agent. Previously presented
(Cu rr ently Amended) The polishing processing method according to claim 8, wherein the fixed polishing abrasive grain type polishing pad has a matrix resin with independent pores or communicating pores, and wherein the plurality of polishing abrasive grains is housed in the matrix resin such that the polishing abrasive grains are partially fixed inside the independent pores or communicating pores formed in the matrix resin or are partially separated from the matrix resin. Currently amended
(Cu rr ently Amended) The polishing processing method according to claim 8, wherein a matrix resin of the fixed polishing abrasive grain type polishing pad is made of an epoxy resin or a polyethersulfone (PES) resin. Currently amended
The polishing processing method according to claim 8. wherein the oxidizing polishing liquid does not contain loose abrasive grains. New
Materials described outside the worked examples.
GaN single crystal
GaN
potassium permanganate
KMnO₄
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
potassium thiosulphate
K₂S₂O₃
hard foamed polyurethane resin
epoxy resin
polyethersulfone (PES) resin
potassium bichromate
K₂Cr₂O₇
polishing abrasive grains
potassium thiosulphate
K₂S₂O₃
hard foamed polyurethane resin
epoxy resin
polyethersulfone (PES) resin
potassium bichromate
K₂Cr₂O₇
polishing abrasive grains
potassium thiosulphate
K₂S₂O₃
hard foamed polyurethane resin
epoxy resin
polyethersulfone (PES) resin
potassium bichromate
K₂Cr₂O₇
polishing abrasive grains
potassium thiosulphate
K₂S₂O₃
hard foamed polyurethane resin
epoxy resin
polyethersulfone (PES) resin
potassium bichromate
K₂Cr₂O₇
polishing abrasive grains