Patent
US 9,305,776OXYGEN DOPING METHOD TO GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND OXYGEN-DOPED N-TYPE GALLIUM NITRIDE FREESTANDING SINGLE CRYSTAL SUBSTRATE
Kensaku MOTOKI
US
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Patent
Atlas literature
Patent
US 9,305,776Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-8. (Can c ell ed). canceled
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(Pre vi ously Presented) A galli um ni tri de crystal substrate having a top surface, a bottom surface, regions of higher oxygen concentrations measured b y SIMS and other regions of low er ox yg en concentrations measured b y SI MS,
(Pre viously Presented) The galli um nitride crystal subst r ate as claimed in claim 9, wherein the top s urf ace is a C-plane surface.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride crystal substrate with oxygen doping
Materials described outside the worked examples.
gallium nitride crystal substrate
GaN
oxygen dopant
O
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio of highest to lowest oxygen concentration (SIMS) | — | GaN |
A-plane {11-20} oxygen doping power relative to C-plane | — |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 9,305,776Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-8. (Can c ell ed). canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
(Pre vi ously Presented) A galli um ni tri de crystal substrate having a top surface, a bottom surface, regions of higher oxygen concentrations measured b y SIMS and other regions of low er ox yg en concentrations measured b y SI MS,
(Pre viously Presented) The galli um nitride crystal subst r ate as claimed in claim 9, wherein the top s urf ace is a C-plane surface.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride crystal substrate with oxygen doping
Materials described outside the worked examples.
gallium nitride crystal substrate
GaN
oxygen dopant
O
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio of highest to lowest oxygen concentration (SIMS) | — | GaN |
A-plane {11-20} oxygen doping power relative to C-plane | — |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 9,305,776Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-8. (Can c ell ed). canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
(Pre vi ously Presented) A galli um ni tri de crystal substrate having a top surface, a bottom surface, regions of higher oxygen concentrations measured b y SIMS and other regions of low er ox yg en concentrations measured b y SI MS,
(Pre viously Presented) The galli um nitride crystal subst r ate as claimed in claim 9, wherein the top s urf ace is a C-plane surface.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride crystal substrate with oxygen doping
Materials described outside the worked examples.
gallium nitride crystal substrate
GaN
oxygen dopant
O
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio of highest to lowest oxygen concentration (SIMS) | — | GaN |
A-plane {11-20} oxygen doping power relative to C-plane | — |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 9,305,776Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-8. (Can c ell ed). canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
(Pre vi ously Presented) A galli um ni tri de crystal substrate having a top surface, a bottom surface, regions of higher oxygen concentrations measured b y SIMS and other regions of low er ox yg en concentrations measured b y SI MS,
(Pre viously Presented) The galli um nitride crystal subst r ate as claimed in claim 9, wherein the top s urf ace is a C-plane surface.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride crystal substrate with oxygen doping
Materials described outside the worked examples.
gallium nitride crystal substrate
GaN
oxygen dopant
O
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ratio of highest to lowest oxygen concentration (SIMS) | — | GaN |
A-plane {11-20} oxygen doping power relative to C-plane | — |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
M-plane {1-100} oxygen doping power relative to C-plane | — | GaN |
M-plane {1-100} oxygen doping power relative to C-plane | — | GaN |
M-plane {1-100} oxygen doping power relative to C-plane | — | GaN |
M-plane {1-100} oxygen doping power relative to C-plane | — | GaN |