Patent
US 10,043,654of Invention:
Kenji Nagao
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,043,654Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for rinsing a compound semiconductor, the method including a step of rinsing a compound semiconductor at a temperature of -7 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation- reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (GaN). SVG 15327480.01-19-2017.IY₄Q₇PR₅RXEAPX5.CLM.1.6.1851.743.1901.784.svg 0.137 0.167 Chemistry Black and white Currently amended
The method according to claim 1, wherein the compound semiconductor includes a GaN substrate. Currently amended
The method according to claim 1, wherein the compound semiconductor includes gallium oxide. Currently amended
Canceled
Canceled
A solution for use in rinsing a compound semiconductor containing gallium as a constituent element, the solution including purified water and sulfuric acid, the solution having a concentration of 50 wt % or less in the purified water, the solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, and the solution having a temperature of 80 degrees centigrade or higher. Currently amended
Canceled
A method for fabricating a compound semiconductor device including steps of: preparing a substrate having a principal surface; applying a rinsing step to the principal surface of the substrate, the rinsing step including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (G aN); and growing a film on the principal surface of the substrate after the rinsing step, the principal surface of the substrate including the compound semiconductor, the film including at least one of another compound semiconductor film, an insulating film, or a metal film, and the step of preparing a substrate including steps of. preparing a supporting body having a principal surface, the principal surface including the another compound semiconductor; forming another insulating film on the principal surface of the supporting body; forming a mask on the another insulating film; etching the another insulating film with the mask to form an opening in the another insulating film, the opening reaching the principal surface of the supporting body, the another compound semiconductor appearing at the opening of the another insulating film; and removing the mask. Currently amended
Canceled
Canceled
Canceled
Canceled
A method for fabricating a gallium nitride substrate comprising steps of. growing a gallium nitride crystal body; processing the gallium nitride crystal body to produce at least one gallium nitride slice; and applying a rinsing step to a principal surface of the gallium nitride slice to provide a gallium nitride substrate having a principal surface rinsed by the rinsing step, the rinsing step including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor including gallium nitride, and the principal surface of the gallium nitride slice including the compound semiconductor, the principal surface thus rinsed including a residual impurity containing at least one of iron, nickel, copper and zin c, a concentration of the residual impurity being 1x 1011 cm- 3 or less, the principal surface of the gallium nitride slice having a first surface roughness, the principal surface of the gallium nitride substrate having a second surface roughness, and the second surface roughness being equal to or smaller than the first surface roughness. Currently amended
Canceled
Canceled
A gallium nitride substrate comprising a principal surface rinsed at a temperature of degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, and the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the principal surface having a surface roughness Ra of 0.06 nm or less, a surface roughness RM S of 0.08 nm or less, or a surface roughness P-V of 0.84 nm or less. Currently amended
Canceled
Canceled
A gallium nitride substrate comprising a principal surface rinsed at a temperature of degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, and, the principal surface including residual impurities of iron, nickel, copper and zin c, the principal surface having an iron impurity concentration of 1x10 11 cm⁻³ or less, the principal surface having a nickel impurity concentration of 1x10 11 cm⁻³ or less, the principal concentration of 1x10 11 cm⁻³ or less, and the concentration of lx 10 11 cm⁻³ or less. Currently surface having a copper impurity principal surface having a zin c impurity amended
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
compound semiconductor device
Materials described outside the worked examples.
gallium nitride
GaN
sulfuric acid
H₂SO₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Roughness Ra | ≤ 0.06 nm | GaN |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 10,043,654Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for rinsing a compound semiconductor, the method including a step of rinsing a compound semiconductor at a temperature of -7 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation- reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (GaN). SVG 15327480.01-19-2017.IY₄Q₇PR₅RXEAPX5.CLM.1.6.1851.743.1901.784.svg 0.137 0.167 Chemistry Black and white Currently amended
The method according to claim 1, wherein the compound semiconductor includes a GaN substrate. Currently amended
The method according to claim 1, wherein the compound semiconductor includes gallium oxide. Currently amended
Canceled
Canceled
A solution for use in rinsing a compound semiconductor containing gallium as a constituent element, the solution including purified water and sulfuric acid, the solution having a concentration of 50 wt % or less in the purified water, the solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, and the solution having a temperature of 80 degrees centigrade or higher. Currently amended
Canceled
A method for fabricating a compound semiconductor device including steps of: preparing a substrate having a principal surface; applying a rinsing step to the principal surface of the substrate, the rinsing step including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (G aN); and growing a film on the principal surface of the substrate after the rinsing step, the principal surface of the substrate including the compound semiconductor, the film including at least one of another compound semiconductor film, an insulating film, or a metal film, and the step of preparing a substrate including steps of. preparing a supporting body having a principal surface, the principal surface including the another compound semiconductor; forming another insulating film on the principal surface of the supporting body; forming a mask on the another insulating film; etching the another insulating film with the mask to form an opening in the another insulating film, the opening reaching the principal surface of the supporting body, the another compound semiconductor appearing at the opening of the another insulating film; and removing the mask. Currently amended
Canceled
Canceled
Canceled
Canceled
A method for fabricating a gallium nitride substrate comprising steps of. growing a gallium nitride crystal body; processing the gallium nitride crystal body to produce at least one gallium nitride slice; and applying a rinsing step to a principal surface of the gallium nitride slice to provide a gallium nitride substrate having a principal surface rinsed by the rinsing step, the rinsing step including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor including gallium nitride, and the principal surface of the gallium nitride slice including the compound semiconductor, the principal surface thus rinsed including a residual impurity containing at least one of iron, nickel, copper and zin c, a concentration of the residual impurity being 1x 1011 cm- 3 or less, the principal surface of the gallium nitride slice having a first surface roughness, the principal surface of the gallium nitride substrate having a second surface roughness, and the second surface roughness being equal to or smaller than the first surface roughness. Currently amended
Canceled
Canceled
A gallium nitride substrate comprising a principal surface rinsed at a temperature of degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, and the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the principal surface having a surface roughness Ra of 0.06 nm or less, a surface roughness RM S of 0.08 nm or less, or a surface roughness P-V of 0.84 nm or less. Currently amended
Canceled
Canceled
A gallium nitride substrate comprising a principal surface rinsed at a temperature of degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, and, the principal surface including residual impurities of iron, nickel, copper and zin c, the principal surface having an iron impurity concentration of 1x10 11 cm⁻³ or less, the principal surface having a nickel impurity concentration of 1x10 11 cm⁻³ or less, the principal concentration of 1x10 11 cm⁻³ or less, and the concentration of lx 10 11 cm⁻³ or less. Currently surface having a copper impurity principal surface having a zin c impurity amended
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
compound semiconductor device
Materials described outside the worked examples.
gallium nitride
GaN
sulfuric acid
H₂SO₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Roughness Ra | ≤ 0.06 nm | GaN |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 10,043,654Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for rinsing a compound semiconductor, the method including a step of rinsing a compound semiconductor at a temperature of -7 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation- reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (GaN). SVG 15327480.01-19-2017.IY₄Q₇PR₅RXEAPX5.CLM.1.6.1851.743.1901.784.svg 0.137 0.167 Chemistry Black and white Currently amended
The method according to claim 1, wherein the compound semiconductor includes a GaN substrate. Currently amended
The method according to claim 1, wherein the compound semiconductor includes gallium oxide. Currently amended
Canceled
Canceled
A solution for use in rinsing a compound semiconductor containing gallium as a constituent element, the solution including purified water and sulfuric acid, the solution having a concentration of 50 wt % or less in the purified water, the solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, and the solution having a temperature of 80 degrees centigrade or higher. Currently amended
Canceled
A method for fabricating a compound semiconductor device including steps of: preparing a substrate having a principal surface; applying a rinsing step to the principal surface of the substrate, the rinsing step including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (G aN); and growing a film on the principal surface of the substrate after the rinsing step, the principal surface of the substrate including the compound semiconductor, the film including at least one of another compound semiconductor film, an insulating film, or a metal film, and the step of preparing a substrate including steps of. preparing a supporting body having a principal surface, the principal surface including the another compound semiconductor; forming another insulating film on the principal surface of the supporting body; forming a mask on the another insulating film; etching the another insulating film with the mask to form an opening in the another insulating film, the opening reaching the principal surface of the supporting body, the another compound semiconductor appearing at the opening of the another insulating film; and removing the mask. Currently amended
Canceled
Canceled
Canceled
Canceled
A method for fabricating a gallium nitride substrate comprising steps of. growing a gallium nitride crystal body; processing the gallium nitride crystal body to produce at least one gallium nitride slice; and applying a rinsing step to a principal surface of the gallium nitride slice to provide a gallium nitride substrate having a principal surface rinsed by the rinsing step, the rinsing step including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor including gallium nitride, and the principal surface of the gallium nitride slice including the compound semiconductor, the principal surface thus rinsed including a residual impurity containing at least one of iron, nickel, copper and zin c, a concentration of the residual impurity being 1x 1011 cm- 3 or less, the principal surface of the gallium nitride slice having a first surface roughness, the principal surface of the gallium nitride substrate having a second surface roughness, and the second surface roughness being equal to or smaller than the first surface roughness. Currently amended
Canceled
Canceled
A gallium nitride substrate comprising a principal surface rinsed at a temperature of degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, and the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the principal surface having a surface roughness Ra of 0.06 nm or less, a surface roughness RM S of 0.08 nm or less, or a surface roughness P-V of 0.84 nm or less. Currently amended
Canceled
Canceled
A gallium nitride substrate comprising a principal surface rinsed at a temperature of degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, and, the principal surface including residual impurities of iron, nickel, copper and zin c, the principal surface having an iron impurity concentration of 1x10 11 cm⁻³ or less, the principal surface having a nickel impurity concentration of 1x10 11 cm⁻³ or less, the principal concentration of 1x10 11 cm⁻³ or less, and the concentration of lx 10 11 cm⁻³ or less. Currently surface having a copper impurity principal surface having a zin c impurity amended
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
compound semiconductor device
Materials described outside the worked examples.
gallium nitride
GaN
sulfuric acid
H₂SO₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Roughness Ra | ≤ 0.06 nm | GaN |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 10,043,654Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for rinsing a compound semiconductor, the method including a step of rinsing a compound semiconductor at a temperature of -7 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation- reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (GaN). SVG 15327480.01-19-2017.IY₄Q₇PR₅RXEAPX5.CLM.1.6.1851.743.1901.784.svg 0.137 0.167 Chemistry Black and white Currently amended
The method according to claim 1, wherein the compound semiconductor includes a GaN substrate. Currently amended
The method according to claim 1, wherein the compound semiconductor includes gallium oxide. Currently amended
Canceled
Canceled
A solution for use in rinsing a compound semiconductor containing gallium as a constituent element, the solution including purified water and sulfuric acid, the solution having a concentration of 50 wt % or less in the purified water, the solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, and the solution having a temperature of 80 degrees centigrade or higher. Currently amended
Canceled
A method for fabricating a compound semiconductor device including steps of: preparing a substrate having a principal surface; applying a rinsing step to the principal surface of the substrate, the rinsing step including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (G aN); and growing a film on the principal surface of the substrate after the rinsing step, the principal surface of the substrate including the compound semiconductor, the film including at least one of another compound semiconductor film, an insulating film, or a metal film, and the step of preparing a substrate including steps of. preparing a supporting body having a principal surface, the principal surface including the another compound semiconductor; forming another insulating film on the principal surface of the supporting body; forming a mask on the another insulating film; etching the another insulating film with the mask to form an opening in the another insulating film, the opening reaching the principal surface of the supporting body, the another compound semiconductor appearing at the opening of the another insulating film; and removing the mask. Currently amended
Canceled
Canceled
Canceled
Canceled
A method for fabricating a gallium nitride substrate comprising steps of. growing a gallium nitride crystal body; processing the gallium nitride crystal body to produce at least one gallium nitride slice; and applying a rinsing step to a principal surface of the gallium nitride slice to provide a gallium nitride substrate having a principal surface rinsed by the rinsing step, the rinsing step including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor including gallium nitride, and the principal surface of the gallium nitride slice including the compound semiconductor, the principal surface thus rinsed including a residual impurity containing at least one of iron, nickel, copper and zin c, a concentration of the residual impurity being 1x 1011 cm- 3 or less, the principal surface of the gallium nitride slice having a first surface roughness, the principal surface of the gallium nitride substrate having a second surface roughness, and the second surface roughness being equal to or smaller than the first surface roughness. Currently amended
Canceled
Canceled
A gallium nitride substrate comprising a principal surface rinsed at a temperature of degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, and the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the principal surface having a surface roughness Ra of 0.06 nm or less, a surface roughness RM S of 0.08 nm or less, or a surface roughness P-V of 0.84 nm or less. Currently amended
Canceled
Canceled
A gallium nitride substrate comprising a principal surface rinsed at a temperature of degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, and, the principal surface including residual impurities of iron, nickel, copper and zin c, the principal surface having an iron impurity concentration of 1x10 11 cm⁻³ or less, the principal surface having a nickel impurity concentration of 1x10 11 cm⁻³ or less, the principal concentration of 1x10 11 cm⁻³ or less, and the concentration of lx 10 11 cm⁻³ or less. Currently surface having a copper impurity principal surface having a zin c impurity amended
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
compound semiconductor device
Materials described outside the worked examples.
gallium nitride
GaN
sulfuric acid
H₂SO₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Surface Roughness Ra | ≤ 0.06 nm | GaN |
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
purified water
H₂O
gallium oxide
Ga₂O₃
dilute sulfuric acid aqueous solution
| ≤ 0.08 nm |
GaN |
Surface Roughness PV | ≤ 0.84 nm | GaN |
Surface Impurity Concentration Fe | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Ni | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Cu | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Zn | ≤ 100000000000 cm⁻³ | GaN |
purified water
H₂O
gallium oxide
Ga₂O₃
dilute sulfuric acid aqueous solution
| ≤ 0.08 nm |
GaN |
Surface Roughness PV | ≤ 0.84 nm | GaN |
Surface Impurity Concentration Fe | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Ni | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Cu | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Zn | ≤ 100000000000 cm⁻³ | GaN |
purified water
H₂O
gallium oxide
Ga₂O₃
dilute sulfuric acid aqueous solution
| ≤ 0.08 nm |
GaN |
Surface Roughness PV | ≤ 0.84 nm | GaN |
Surface Impurity Concentration Fe | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Ni | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Cu | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Zn | ≤ 100000000000 cm⁻³ | GaN |
purified water
H₂O
gallium oxide
Ga₂O₃
dilute sulfuric acid aqueous solution
| ≤ 0.08 nm |
GaN |
Surface Roughness PV | ≤ 0.84 nm | GaN |
Surface Impurity Concentration Fe | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Ni | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Cu | ≤ 100000000000 cm⁻³ | GaN |
Surface Impurity Concentration Zn | ≤ 100000000000 cm⁻³ | GaN |