PREPARED AND STORED GAN SUBSTRATE | Matter42 Literature
Patent
Atlas literature
Patent
US 8,772,787
PREPARED AND STORED GAN SUBSTRATE
Hideyuki Ijiri
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 3 dependent
1
IndependentGaN
30 CLAIMS What is claimed is:
2
Dependent← claim 1GaN
The GaN substrate set forth in claim 1, wherein the average roughness Ra of said first principal face is not greater than 5 nm, and the average roughness Ra of said second principal face is not greater than 10 pm.
3
IndependentGaN
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m 3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between -10° and 10 0, inclusive, with respect to an arbitrarily designated {20 2 1 } crystalline plane through said arbitrary point. 31
4
IndependentGaN
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between -10 and 10 0, inclusive, in a &l t; 1 2 10> direction with respect to an arbitrarily designated {20 2 1 } crystalline plane through said arbitrary point, and of between -10 and 10 0, inclusive, in a direction perpendicular to a <20 2 1> direction and t o a <1 2 10> direction.
5
Dependent← claim 4GaN
The GaN substrate set forth in claim 4, wherein the plane orientation of said first principal face has an off-inclination angle of between -3° and 3 0, inclusive, in a <12 10> direction with respect to { 20 2 1}, and be twe en -3° and 30, inclusive, in a direction perpendicular to a <202 1> direction a nd to a <1 2 10> direction.
6
Dependent← claim 4GaN
The GaN substrate set forth in claim 4, wherein the plane orientation of said first principal face has an off-inclination angle of between-0.5 0 and 0.5 0, inclusive, in a <12 10> direction with respect to { 20 2 1}, and be t wee n -0.50 a n d 0.50, inclusive, in a direction perpendicular to a <202 1> direction and to a <1 2 10> direction.
Materials
Materials described outside the worked examples.
GaN substrate
GaN
Substrate
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
≥ 20 nm
—
Thickness
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 3 dependent
1
IndependentGaN
30 CLAIMS What is claimed is:
2
Dependent← claim 1GaN
The GaN substrate set forth in claim 1, wherein the average roughness Ra of said first principal face is not greater than 5 nm, and the average roughness Ra of said second principal face is not greater than 10 pm.
3
IndependentGaN
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m 3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between -10° and 10 0, inclusive, with respect to an arbitrarily designated {20 2 1 } crystalline plane through said arbitrary point. 31
4
IndependentGaN
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between -10 and 10 0, inclusive, in a &l t; 1 2 10> direction with respect to an arbitrarily designated {20 2 1 } crystalline plane through said arbitrary point, and of between -10 and 10 0, inclusive, in a direction perpendicular to a <20 2 1> direction and t o a <1 2 10> direction.
5
Dependent← claim 4GaN
The GaN substrate set forth in claim 4, wherein the plane orientation of said first principal face has an off-inclination angle of between -3° and 3 0, inclusive, in a <12 10> direction with respect to { 20 2 1}, and be twe en -3° and 30, inclusive, in a direction perpendicular to a <202 1> direction a nd to a <1 2 10> direction.
6
Dependent← claim 4GaN
The GaN substrate set forth in claim 4, wherein the plane orientation of said first principal face has an off-inclination angle of between-0.5 0 and 0.5 0, inclusive, in a <12 10> direction with respect to { 20 2 1}, and be t wee n -0.50 a n d 0.50, inclusive, in a direction perpendicular to a <202 1> direction and to a <1 2 10> direction.
Materials
Materials described outside the worked examples.
GaN substrate
GaN
Substrate
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
≥ 20 nm
—
Thickness
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 3 dependent
1
IndependentGaN
30 CLAIMS What is claimed is:
2
Dependent← claim 1GaN
The GaN substrate set forth in claim 1, wherein the average roughness Ra of said first principal face is not greater than 5 nm, and the average roughness Ra of said second principal face is not greater than 10 pm.
3
IndependentGaN
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m 3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between -10° and 10 0, inclusive, with respect to an arbitrarily designated {20 2 1 } crystalline plane through said arbitrary point. 31
4
IndependentGaN
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between -10 and 10 0, inclusive, in a &l t; 1 2 10> direction with respect to an arbitrarily designated {20 2 1 } crystalline plane through said arbitrary point, and of between -10 and 10 0, inclusive, in a direction perpendicular to a <20 2 1> direction and t o a <1 2 10> direction.
5
Dependent← claim 4GaN
The GaN substrate set forth in claim 4, wherein the plane orientation of said first principal face has an off-inclination angle of between -3° and 3 0, inclusive, in a <12 10> direction with respect to { 20 2 1}, and be twe en -3° and 30, inclusive, in a direction perpendicular to a <202 1> direction a nd to a <1 2 10> direction.
6
Dependent← claim 4GaN
The GaN substrate set forth in claim 4, wherein the plane orientation of said first principal face has an off-inclination angle of between-0.5 0 and 0.5 0, inclusive, in a <12 10> direction with respect to { 20 2 1}, and be t wee n -0.50 a n d 0.50, inclusive, in a direction perpendicular to a <202 1> direction and to a <1 2 10> direction.
Materials
Materials described outside the worked examples.
GaN substrate
GaN
Substrate
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
≥ 20 nm
—
Thickness
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 3 dependent
1
IndependentGaN
30 CLAIMS What is claimed is:
2
Dependent← claim 1GaN
The GaN substrate set forth in claim 1, wherein the average roughness Ra of said first principal face is not greater than 5 nm, and the average roughness Ra of said second principal face is not greater than 10 pm.
3
IndependentGaN
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m 3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between -10° and 10 0, inclusive, with respect to an arbitrarily designated {20 2 1 } crystalline plane through said arbitrary point. 31
4
IndependentGaN
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between -10 and 10 0, inclusive, in a &l t; 1 2 10> direction with respect to an arbitrarily designated {20 2 1 } crystalline plane through said arbitrary point, and of between -10 and 10 0, inclusive, in a direction perpendicular to a <20 2 1> direction and t o a <1 2 10> direction.
5
Dependent← claim 4GaN
The GaN substrate set forth in claim 4, wherein the plane orientation of said first principal face has an off-inclination angle of between -3° and 3 0, inclusive, in a <12 10> direction with respect to { 20 2 1}, and be twe en -3° and 30, inclusive, in a direction perpendicular to a <202 1> direction a nd to a <1 2 10> direction.
6
Dependent← claim 4GaN
The GaN substrate set forth in claim 4, wherein the plane orientation of said first principal face has an off-inclination angle of between-0.5 0 and 0.5 0, inclusive, in a <12 10> direction with respect to { 20 2 1}, and be t wee n -0.50 a n d 0.50, inclusive, in a direction perpendicular to a <202 1> direction and to a <1 2 10> direction.
Materials
Materials described outside the worked examples.
GaN substrate
GaN
Substrate
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
≥ 20 nm
—
Thickness
Why these are connected
Related documents with shared materials, methods, properties, or citations.
