SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Hitoshi KASAI

Patent

Atlas literature

Patent

US 8,143,140

SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Hitoshi KASAI, Akihiro Hachigo, Yoshiki Miura, Katsushi Akita

2012-03-27·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

8 independent · 4 dependent

1
IndependentGaNsubstrate different in type from GaNthin GaN film-joined substrate
A method of producing a thin GaN ﬁlm-joined substrate, the method comprising the steps of: joining on a GaN bulk crystalline body a substrate diﬀerent in type, diﬀerent in chemical composition from GaN; and dividing said GaN bulk crystalline body at a plane having a distance of at least 0.1 pm and at most 100 p m from an interface thereof with said substrate diﬀerent in type, to provide a thin ﬁlm of GaN on said substrate diﬀerent in type, wherein said GaN bulk crystalline body had a surface joined to said substrate diﬀerent in type, that has a maximum surface roughness Rmax of at most 20 m and an oﬀ-angle formed by said surface of said GaN bulk crystalline body to be joined and a (0001) plane of said GaN bulk crystalline body is at least 0.03 0 and at most 20 °.
1. 2
  Dependent← claim 1GaN
  The method of producing said thin GaN ﬁlm-joined substrate according to claim 1, further comprising the step of implanting a type of ions selected from the group consisting of hydrogen ions, helium ions and nitrogen ions into said GaN bulk crystalline body at said plane located at a depth of at least 0.1 p m and at most 100 p m from said surface of said GaN bulk crystalline body that is to be joined, before the step of joining said substrate diﬀerent in type on said GaN bulk crystalline body, wherein the step of dividing said GaN bulk crystalline body includes subjecting said GaN bulk crystalline body to a heat treatment.
2. 3
  Dependent← claim 1GaN
  The method of producing said thin GaN ﬁlm-joined substrate according to claim 1, wherein the step of dividing said GaN bulk crystalline body includes cutting said GaN bulk crystalline body at said plane having said distance of at least 0.1 p m and at most 100 p m from said interface thereof with said substrate diﬀerent in type.
3. 4
  Dependent← claim 1GaNGaN-based semiconductor layerfirst GaN-based semiconductor device
  A method of fabricating a ﬁrst GaN-based semiconductor device with a thin GaN ﬁlm-joined substrate obtained in the method of claim 1, comprising the step of growing at least one GaN-based semiconductor layer on the thin ﬁlm of GaN of the thin GaN ﬁlm-joined substrate.
5
IndependentGaNsubstrate different in type from GaNGaN-based semiconductor layerradiating and electrically conductive substratefirst GaN-based semiconductor devicesecond GaN-based semiconductor device
A method of fabricating a second GaN-based semiconductor device utilizing the ﬁrst GaN-based semiconductor device obtained in the method of radiating and electrically conductive substrate on semiconductor layer of said ﬁrst GaN-based GaN and the substrate diﬀerent in type from each
6
Independent
Claims 6-12 canceled
7
Independent
canceled
8
Independent
canceled
9
Independent
canceled
10
Independent
canceled
11
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

thin GaN film-joined substrate

GaNthin film

substrate different in type from GaNsupport substrate

first GaN-based semiconductor device

GaN-based semiconductor layerepitaxial semiconductor layer

GaNseed layer

substrate different in type from GaNsupport substrate

Materials

Materials described outside the worked examples.

GaN bulk crystalline body

GaN

Source Substrate Bulk Crystal

substrate different in type from GaN

Support Substrate

GaN-based semiconductor layer

Why these are connected

Related documents with shared materials, methods, properties, or citations.

SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Matter42 Literature