Patent
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE
Hideaki TANIMURA
Copyright © 2026 Matter42. All rights reserved.
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal cross-sectional view illustrating the configu r ation of a heat treatment apparatus for use in carrying out a method of heat treatment …
FIG. 2 is an external perspective view illustrating the entire appearance of a holder;
FIG. 3 is a plan view of a susceptor;
FIG. 4 is a cross-sectional view of the susceptor;
FIG. 5 is a plan view of a transfer mechanism;
FIG. 6 is a side view of the transfer mechanism;
FIG. 7 is a plan view illustrating an arrangement of halogen lamps;
FIG. 8 is a flowchart showing process steps of a method for fabricating a p-type gallium nitride semiconductor according to the preferred embodiment; and
FIG. 9 is a diagram illustrating a GaN substrate placed on a placement plate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a p-type gallium nitride semiconductor, comprising the steps of: (a) injecting a p-type dopant into a substrate of gallium nitride; and (b) heating the substrate by irradiating the substrate with a flash of light from a flash heating part for 0.1 millisecond or more and less than one second in an atmosphere containing nitrogen and hydrogen, the flash of light from the flash heating part covering entirety of the main surface of the substrate at once. Currently amended
The method according to claim 1, wherein the atmosphere containing nitrogen and hydrogen is an atmosphere of ammonia. Original
The method according to claim 1, wherein the atmosphere containing nitrogen and hydrogen is a forming-gas atmosphere. Original
A method for heating a gallium nitride substrate, comprising the steps of: (a) transporting a substrate of gallium nitride injected with a p-type dopant into a chamber; (b) forming, in the chamber, an atmosphere containing nitrogen and hydrogen; and (c) heating the substrate by irradiating the substrate with a flash of light from a flash heating part for 0.1 millisecond or more and less than one second, the flash of light from the flash heating part covering entirety of the main surface of the substrate at once. Currently amended
The method according to claim 4, wherein the atmosphere containing Original
The method according to claim 4. wherein the atmosphere containing Original
Materials described outside the worked examples.
gallium nitride
GaN
p-type dopant
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 270–280 mm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal cross-sectional view illustrating the configu r ation of a heat treatment apparatus for use in carrying out a method of heat treatment …
FIG. 2 is an external perspective view illustrating the entire appearance of a holder;
FIG. 3 is a plan view of a susceptor;
FIG. 4 is a cross-sectional view of the susceptor;
FIG. 5 is a plan view of a transfer mechanism;
FIG. 6 is a side view of the transfer mechanism;
FIG. 7 is a plan view illustrating an arrangement of halogen lamps;
FIG. 8 is a flowchart showing process steps of a method for fabricating a p-type gallium nitride semiconductor according to the preferred embodiment; and
FIG. 9 is a diagram illustrating a GaN substrate placed on a placement plate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a p-type gallium nitride semiconductor, comprising the steps of: (a) injecting a p-type dopant into a substrate of gallium nitride; and (b) heating the substrate by irradiating the substrate with a flash of light from a flash heating part for 0.1 millisecond or more and less than one second in an atmosphere containing nitrogen and hydrogen, the flash of light from the flash heating part covering entirety of the main surface of the substrate at once. Currently amended
The method according to claim 1, wherein the atmosphere containing nitrogen and hydrogen is an atmosphere of ammonia. Original
The method according to claim 1, wherein the atmosphere containing nitrogen and hydrogen is a forming-gas atmosphere. Original
A method for heating a gallium nitride substrate, comprising the steps of: (a) transporting a substrate of gallium nitride injected with a p-type dopant into a chamber; (b) forming, in the chamber, an atmosphere containing nitrogen and hydrogen; and (c) heating the substrate by irradiating the substrate with a flash of light from a flash heating part for 0.1 millisecond or more and less than one second, the flash of light from the flash heating part covering entirety of the main surface of the substrate at once. Currently amended
The method according to claim 4, wherein the atmosphere containing Original
The method according to claim 4. wherein the atmosphere containing Original
Materials described outside the worked examples.
gallium nitride
GaN
p-type dopant
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 270–280 mm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal cross-sectional view illustrating the configu r ation of a heat treatment apparatus for use in carrying out a method of heat treatment …
FIG. 2 is an external perspective view illustrating the entire appearance of a holder;
FIG. 3 is a plan view of a susceptor;
FIG. 4 is a cross-sectional view of the susceptor;
FIG. 5 is a plan view of a transfer mechanism;
FIG. 6 is a side view of the transfer mechanism;
FIG. 7 is a plan view illustrating an arrangement of halogen lamps;
FIG. 8 is a flowchart showing process steps of a method for fabricating a p-type gallium nitride semiconductor according to the preferred embodiment; and
FIG. 9 is a diagram illustrating a GaN substrate placed on a placement plate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a p-type gallium nitride semiconductor, comprising the steps of: (a) injecting a p-type dopant into a substrate of gallium nitride; and (b) heating the substrate by irradiating the substrate with a flash of light from a flash heating part for 0.1 millisecond or more and less than one second in an atmosphere containing nitrogen and hydrogen, the flash of light from the flash heating part covering entirety of the main surface of the substrate at once. Currently amended
The method according to claim 1, wherein the atmosphere containing nitrogen and hydrogen is an atmosphere of ammonia. Original
The method according to claim 1, wherein the atmosphere containing nitrogen and hydrogen is a forming-gas atmosphere. Original
A method for heating a gallium nitride substrate, comprising the steps of: (a) transporting a substrate of gallium nitride injected with a p-type dopant into a chamber; (b) forming, in the chamber, an atmosphere containing nitrogen and hydrogen; and (c) heating the substrate by irradiating the substrate with a flash of light from a flash heating part for 0.1 millisecond or more and less than one second, the flash of light from the flash heating part covering entirety of the main surface of the substrate at once. Currently amended
The method according to claim 4, wherein the atmosphere containing Original
The method according to claim 4. wherein the atmosphere containing Original
Materials described outside the worked examples.
gallium nitride
GaN
p-type dopant
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 270–280 mm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal cross-sectional view illustrating the configu r ation of a heat treatment apparatus for use in carrying out a method of heat treatment …
FIG. 2 is an external perspective view illustrating the entire appearance of a holder;
FIG. 3 is a plan view of a susceptor;
FIG. 4 is a cross-sectional view of the susceptor;
FIG. 5 is a plan view of a transfer mechanism;
FIG. 6 is a side view of the transfer mechanism;
FIG. 7 is a plan view illustrating an arrangement of halogen lamps;
FIG. 8 is a flowchart showing process steps of a method for fabricating a p-type gallium nitride semiconductor according to the preferred embodiment; and
FIG. 9 is a diagram illustrating a GaN substrate placed on a placement plate.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a p-type gallium nitride semiconductor, comprising the steps of: (a) injecting a p-type dopant into a substrate of gallium nitride; and (b) heating the substrate by irradiating the substrate with a flash of light from a flash heating part for 0.1 millisecond or more and less than one second in an atmosphere containing nitrogen and hydrogen, the flash of light from the flash heating part covering entirety of the main surface of the substrate at once. Currently amended
The method according to claim 1, wherein the atmosphere containing nitrogen and hydrogen is an atmosphere of ammonia. Original
The method according to claim 1, wherein the atmosphere containing nitrogen and hydrogen is a forming-gas atmosphere. Original
A method for heating a gallium nitride substrate, comprising the steps of: (a) transporting a substrate of gallium nitride injected with a p-type dopant into a chamber; (b) forming, in the chamber, an atmosphere containing nitrogen and hydrogen; and (c) heating the substrate by irradiating the substrate with a flash of light from a flash heating part for 0.1 millisecond or more and less than one second, the flash of light from the flash heating part covering entirety of the main surface of the substrate at once. Currently amended
The method according to claim 4, wherein the atmosphere containing Original
The method according to claim 4. wherein the atmosphere containing Original
Materials described outside the worked examples.
gallium nitride
GaN
p-type dopant
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 270–280 mm | — |
Related documents with shared materials, methods, properties, or citations.
atmosphere containing nitrogen and hydrogen
ammonia
NH₃
forming gas
magnesium
Mg
forming gas (H₂/N₂ mixed gas)
atmosphere containing nitrogen and hydrogen
ammonia
NH₃
forming gas
magnesium
Mg
forming gas (H₂/N₂ mixed gas)
atmosphere containing nitrogen and hydrogen
ammonia
NH₃
forming gas
magnesium
Mg
forming gas (H₂/N₂ mixed gas)
atmosphere containing nitrogen and hydrogen
ammonia
NH₃
forming gas
magnesium
Mg
forming gas (H₂/N₂ mixed gas)