Patent
Atlas literature
Patent
US 12,413,191 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a Ka-band GaN MMIC power amplifier circuit provided by Embodi- ment 1 of the present disclosure;
FIG. 2 is a schematic structural diagram of a matching network unit provided by Embodiment 1 of the present 60 disclosure;
FIG. 3 is a schematic structural diagram of another Ka-band GaN MMIC power amplifier circuit provided by Embodiment 1 of the present disclosure;
FIG. 4 is a circuit diagram of the Ka-band GaN MMIC 65 power amplifier circuit provided by Embodiment 1 of the present disclosure; and B₂
FIG. 5 is a schematic diagram of a circuit structure of a reactance type matching unit provided by Embodiment 1 of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Ka-band gallium-nitride (GaN) monolithic-microwave integrated circuit (MMIC) power amplifier circuit, comprising: a plurality of cascade-connected amplification modules, wherein a first amplification module comprises a first amplification unit, and each of all of the amplification B₂ modules except the first amplification module comprises a matching network unit and an amplification unit; an input terminal of the first amplification unit, as an input terminal of the first amplification module, is configured to input a radio-frequency (RF) signal; and a current matching network unit comprises an input terminal connected to an output terminal of a front-stage ampli-fication unit and an output terminal connected to an input terminal of a current amplification unit, an output terminal of the current amplification unit is connected to an input terminal of a matching network unit of a rear-stage amplification module, and an output terminal of a last amplification unit in a last amplification module, as an output terminal of the last amplification module, is configured to output the RF signal; and the matching network unit comprises: a microstrip line ML1, a microstrip line ML2, and a capacitor C1; and the microstrip line ML₁ comprises one terminal con-nected to the output terminal of the front-stage ampli-fication unit and the other terminal connected to one terminal of the microstrip line ML₂ and one terminal of the capacitor C1, the other terminal of the microstrip line ML₂ is connected to the input terminal of the current amplification unit, and the other terminal of the capacitor C₁ is grounded.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein the last amplification module further comprises a reactance type matching unit; and the reactance type matching unit comprises an input terminal connected to the output terminal of the last amplification unit in the last amplification module and a first output terminal serving as the output terminal of the last amplification module.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein the amplification unit of each of the amplification modules comprises: a transistor; and the transistor comprises a gate serving as the input ter-minal of the current amplification unit, a drain serving as the output terminal of the current amplification unit, and a source grounded.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein when there are three cascade-connected amplification modules in cascade connection, an amplification unit in a second amplification module and an amplification unit in a third amplification module have a gate width ratio of 2.5.
An amplifier, comprising the Ka-band GaN MMIC power amplifier circuit according to claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
Ka-band GaN MMIC power amplifier circuit
Materials described outside the worked examples.
gallium nitride
GaN
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 12,413,191 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a Ka-band GaN MMIC power amplifier circuit provided by Embodi- ment 1 of the present disclosure;
FIG. 2 is a schematic structural diagram of a matching network unit provided by Embodiment 1 of the present 60 disclosure;
FIG. 3 is a schematic structural diagram of another Ka-band GaN MMIC power amplifier circuit provided by Embodiment 1 of the present disclosure;
FIG. 4 is a circuit diagram of the Ka-band GaN MMIC 65 power amplifier circuit provided by Embodiment 1 of the present disclosure; and B₂
FIG. 5 is a schematic diagram of a circuit structure of a reactance type matching unit provided by Embodiment 1 of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Ka-band gallium-nitride (GaN) monolithic-microwave integrated circuit (MMIC) power amplifier circuit, comprising: a plurality of cascade-connected amplification modules, wherein a first amplification module comprises a first amplification unit, and each of all of the amplification B₂ modules except the first amplification module comprises a matching network unit and an amplification unit; an input terminal of the first amplification unit, as an input terminal of the first amplification module, is configured to input a radio-frequency (RF) signal; and a current matching network unit comprises an input terminal connected to an output terminal of a front-stage ampli-fication unit and an output terminal connected to an input terminal of a current amplification unit, an output terminal of the current amplification unit is connected to an input terminal of a matching network unit of a rear-stage amplification module, and an output terminal of a last amplification unit in a last amplification module, as an output terminal of the last amplification module, is configured to output the RF signal; and the matching network unit comprises: a microstrip line ML1, a microstrip line ML2, and a capacitor C1; and the microstrip line ML₁ comprises one terminal con-nected to the output terminal of the front-stage ampli-fication unit and the other terminal connected to one terminal of the microstrip line ML₂ and one terminal of the capacitor C1, the other terminal of the microstrip line ML₂ is connected to the input terminal of the current amplification unit, and the other terminal of the capacitor C₁ is grounded.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein the last amplification module further comprises a reactance type matching unit; and the reactance type matching unit comprises an input terminal connected to the output terminal of the last amplification unit in the last amplification module and a first output terminal serving as the output terminal of the last amplification module.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein the amplification unit of each of the amplification modules comprises: a transistor; and the transistor comprises a gate serving as the input ter-minal of the current amplification unit, a drain serving as the output terminal of the current amplification unit, and a source grounded.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein when there are three cascade-connected amplification modules in cascade connection, an amplification unit in a second amplification module and an amplification unit in a third amplification module have a gate width ratio of 2.5.
An amplifier, comprising the Ka-band GaN MMIC power amplifier circuit according to claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
Ka-band GaN MMIC power amplifier circuit
Materials described outside the worked examples.
gallium nitride
GaN
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 12,413,191 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a Ka-band GaN MMIC power amplifier circuit provided by Embodi- ment 1 of the present disclosure;
FIG. 2 is a schematic structural diagram of a matching network unit provided by Embodiment 1 of the present 60 disclosure;
FIG. 3 is a schematic structural diagram of another Ka-band GaN MMIC power amplifier circuit provided by Embodiment 1 of the present disclosure;
FIG. 4 is a circuit diagram of the Ka-band GaN MMIC 65 power amplifier circuit provided by Embodiment 1 of the present disclosure; and B₂
FIG. 5 is a schematic diagram of a circuit structure of a reactance type matching unit provided by Embodiment 1 of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Ka-band gallium-nitride (GaN) monolithic-microwave integrated circuit (MMIC) power amplifier circuit, comprising: a plurality of cascade-connected amplification modules, wherein a first amplification module comprises a first amplification unit, and each of all of the amplification B₂ modules except the first amplification module comprises a matching network unit and an amplification unit; an input terminal of the first amplification unit, as an input terminal of the first amplification module, is configured to input a radio-frequency (RF) signal; and a current matching network unit comprises an input terminal connected to an output terminal of a front-stage ampli-fication unit and an output terminal connected to an input terminal of a current amplification unit, an output terminal of the current amplification unit is connected to an input terminal of a matching network unit of a rear-stage amplification module, and an output terminal of a last amplification unit in a last amplification module, as an output terminal of the last amplification module, is configured to output the RF signal; and the matching network unit comprises: a microstrip line ML1, a microstrip line ML2, and a capacitor C1; and the microstrip line ML₁ comprises one terminal con-nected to the output terminal of the front-stage ampli-fication unit and the other terminal connected to one terminal of the microstrip line ML₂ and one terminal of the capacitor C1, the other terminal of the microstrip line ML₂ is connected to the input terminal of the current amplification unit, and the other terminal of the capacitor C₁ is grounded.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein the last amplification module further comprises a reactance type matching unit; and the reactance type matching unit comprises an input terminal connected to the output terminal of the last amplification unit in the last amplification module and a first output terminal serving as the output terminal of the last amplification module.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein the amplification unit of each of the amplification modules comprises: a transistor; and the transistor comprises a gate serving as the input ter-minal of the current amplification unit, a drain serving as the output terminal of the current amplification unit, and a source grounded.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein when there are three cascade-connected amplification modules in cascade connection, an amplification unit in a second amplification module and an amplification unit in a third amplification module have a gate width ratio of 2.5.
An amplifier, comprising the Ka-band GaN MMIC power amplifier circuit according to claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
Ka-band GaN MMIC power amplifier circuit
Materials described outside the worked examples.
gallium nitride
GaN
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
Patent
Atlas literature
Patent
US 12,413,191 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a Ka-band GaN MMIC power amplifier circuit provided by Embodi- ment 1 of the present disclosure;
FIG. 2 is a schematic structural diagram of a matching network unit provided by Embodiment 1 of the present 60 disclosure;
FIG. 3 is a schematic structural diagram of another Ka-band GaN MMIC power amplifier circuit provided by Embodiment 1 of the present disclosure;
FIG. 4 is a circuit diagram of the Ka-band GaN MMIC 65 power amplifier circuit provided by Embodiment 1 of the present disclosure; and B₂
FIG. 5 is a schematic diagram of a circuit structure of a reactance type matching unit provided by Embodiment 1 of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Ka-band gallium-nitride (GaN) monolithic-microwave integrated circuit (MMIC) power amplifier circuit, comprising: a plurality of cascade-connected amplification modules, wherein a first amplification module comprises a first amplification unit, and each of all of the amplification B₂ modules except the first amplification module comprises a matching network unit and an amplification unit; an input terminal of the first amplification unit, as an input terminal of the first amplification module, is configured to input a radio-frequency (RF) signal; and a current matching network unit comprises an input terminal connected to an output terminal of a front-stage ampli-fication unit and an output terminal connected to an input terminal of a current amplification unit, an output terminal of the current amplification unit is connected to an input terminal of a matching network unit of a rear-stage amplification module, and an output terminal of a last amplification unit in a last amplification module, as an output terminal of the last amplification module, is configured to output the RF signal; and the matching network unit comprises: a microstrip line ML1, a microstrip line ML2, and a capacitor C1; and the microstrip line ML₁ comprises one terminal con-nected to the output terminal of the front-stage ampli-fication unit and the other terminal connected to one terminal of the microstrip line ML₂ and one terminal of the capacitor C1, the other terminal of the microstrip line ML₂ is connected to the input terminal of the current amplification unit, and the other terminal of the capacitor C₁ is grounded.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein the last amplification module further comprises a reactance type matching unit; and the reactance type matching unit comprises an input terminal connected to the output terminal of the last amplification unit in the last amplification module and a first output terminal serving as the output terminal of the last amplification module.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein the amplification unit of each of the amplification modules comprises: a transistor; and the transistor comprises a gate serving as the input ter-minal of the current amplification unit, a drain serving as the output terminal of the current amplification unit, and a source grounded.
The Ka-band GaN MMIC power amplifier circuit according to claim 1, wherein when there are three cascade-connected amplification modules in cascade connection, an amplification unit in a second amplification module and an amplification unit in a third amplification module have a gate width ratio of 2.5.
An amplifier, comprising the Ka-band GaN MMIC power amplifier circuit according to claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
Ka-band GaN MMIC power amplifier circuit
Materials described outside the worked examples.
gallium nitride
GaN
Related documents with shared materials, methods, properties, or citations.
SUBSTRATE HAVING THIN FILM OF GAN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GAN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
METHOD FOR FABRICATING P-TYPE GALLIUM NITRIDE SEMICONDUCTOR AND METHOD OF HEAT TREATMENT
